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At least 379 records · Page 21

A Comparison of Ion Implantation at Room Temperature and Heated Ion Implantation on the Body Diode Degradation of Commercial 3.3 kV 4H-SiC Power MOSFETs

It has been demonstrated that basal plane dislocations (BPDs)-induced stacking faults (SFs) cause body diode degradation in commercial 4H-SiC power MOSFETs, especially with higher voltage ratings. BPDs originate from 4H-SiC boule, epi growth, and ion implantation. Considering the lower cost of ion implantation at room temperature (RT), this work investigates the potential of RT ion implantation replacing heated (HT) ion implantation by comparing the influence of both ion implantations on the body diode degradation of commercial 3.3 kV 4H-SiC power MOSFETs. We demonstrate with long-term (up to 1000 hours) forward current stress that RT implantation can keep the body diode degradation of 3.3 kV 4H-SiC power MOSFETs within the specification limits compared with HT implantation.

4H-SiC↗

Intercalation of Mg into a Few-Layer Phyllomanganate in Non-aqueous Electrolytes at Room Temperature

The use of oxide cathodes in Mg batteries would unlock a potential energy storage system that delivers high-energy density. However, poor kinetics of Mg diffusion in known solid oxide lattices strongly limits reversible intercalation, which motivates the sustained exploration of new candidates. Herein, nanocrystals of a few-layer phyllomanganate, reminiscent of the mineral vernadite, were shown to have considerable electrochemical activity toward Mg intercalation at room temperature, where it delivered similar to 190 mAh g- 1 at similar to 1.9 V (vs Mg/Mg 2+ ) in batteries paired with a Mg metal anode. Multimodal characterization confirmed the notable degree of reversible intercalation by probing the structural, compositional, and redox changes undertaken by the oxide. Distinct levels of Mg activity were also observed while varying the content of small amounts of lattice water and the temperature of the reaction. The results reaffirm the prospects for operational Mg batteries using oxide cathode in moderate conditions, overcoming current limits of performance of this prospective technology.

25 ENERGY STORAGE↗

High-dimensional quantum key distribution using orbital angular momentum of single photons from a colloidal quantum dot at room temperature

High-dimensional quantum key distribution (HDQKD) is a promising avenue to address the inherent limitations of basic quantum key distribution (QKD) protocols. However, experimental realizations of HDQKD to date have relied on indeterministic photon sources that limit the achievable key rate. In this paper, we demonstrate a full emulation of a HDQKD system using a single colloidal giant quantum dot (gQD) as a deterministic, compact, and room-temperature single-photon source (SPS). We demonstrate a practical protocol by encoding information in a high-dimensional space (d = 3) of the orbital angular momentum of the photons. Our experimental configuration incorporates two spatial light modulators for encoding and decoding the spatial information carried by individual photons. Our experimental demonstration establishes the feasibility of utilizing high radiative quantum yield gQDs as practical SPSs for HDQKD. We also experimentally demonstrate surpassing the traditional d = 2 QKD capacity with comparable error rates, indicating a significant improvement in performance while maintaining reliability.

36 MATERIALS SCIENCE↗

Room temperature crystal field splitting of curium resolved by circularly polarized luminescence spectroscopy

Coordination of Cm(III) with a chiral decadentate ligand N,N,N',N'-tetrakis[(6-carboxypyridin-2-yl)methyl]-1,2-diaminocyclohexane (tpadac) generated complexes with strong luminescence allowing for the unprecedented measurement of well-resolved Cm(III) circularly polarized luminescence spectra. Quantitative resolution of the electronic structure of the [Cm(tpadac)][K] complexes was achieved at room temperature, highlighting the strength of the combination of luminescence and circularly polarized luminescence spectroscopies to unravel the fundamental electronic structure of Cm(III). These results are a clear demonstration that these spectroscopies are powerful yet simple tools for the fundamental understanding of electronic structure, which opens the door to future investigations of other Cm(III) complexes in geometries relevant to nuclear applications, and even other 5f-elements.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Persistent Room-Temperature Photodarkening in Cu-Doped β - Ga 2 O 3

β–Ga 2 O 3 is an ultrawide band gap semiconductor with emerging applications in power electronics. Here, the introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped β–Ga 2 O 3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu 2+ to Cu 3+ , a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O–H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (HO) defects. When Cu Ga –HO complexes absorb light, hydrogen is released, contributing to the observed Cu 3+ species and O–H modes.

36 MATERIALS SCIENCE↗

Enabling room-temperature ferromagnetism in few-layered MoS 2 films via strain engineering

Strain engineering presents a promising pathway for modulating the physical properties of two-dimensional (2D) transition metal dichalcogenides materials. Here, in this study, we investigate the strain-induced magnetic behavior of diamagnetic MoS 2 films prepared by the DC magnetron sputtering technique. By applying +1% tensile strain to few-layered MoS 2 films (∼3.5 nm), we observe the emergence of room-temperature ferromagnetism with a magnetization saturation of about ∼130 emu/cm 3 , in stark contrast to bulk films (∼40 nm), which remain diamagnetic under similar conditions. Raman spectroscopy reveals a pronounced reduction in the intensity and the splitting of the E′ mode in 1% strained few-layered films, indicating a possible bond elongation and symmetry breaking under tensile stress. Additionally, x-ray absorption spectroscopy at the Mo M 3 edge further confirms a strain-induced electronic structure modification in few-layered films, with no corresponding shift observed in bulk counterparts. Moreover, the strain-induced magnetic and structural changes are largely reversible upon strain release. We attribute the origin of ferromagnetism in few-layered films to the combined influence of tensile strain and defect-assisted bond weakening, which facilitates crystal field transitions within the Mo 4d orbitals. These findings demonstrate that strain engineering can effectively induce and modulate magnetism in 2D materials, providing opportunities for developing strain-controlled spintronic applications.

36 MATERIALS SCIENCE↗

Joint X-ray/neutron structure of Lentinus similis AA9_A at room temperature

Lytic polysaccharide monooxygenases (LPMOs) are copper metalloenzymes which cleave polysaccharides oxidatively and are important in pathogen biology, carbon cycling and biotechnology. The Lentinus similis family AA9 isoform A (LsAA9_A) has been extensively studied as a model system because its activity towards smaller soluble saccharide substrates has allowed detailed structural characterization of its interaction with a variety of substrates by X-ray crystallography at high resolution. Here, the joint X-ray/neutron room-temperature crystallographic structure of carbohydrate-free LsAA9_A in the copper(II) resting state refined against X-ray and neutron data at 2.1 and 2.8 Å resolution, respectively, is presented. The results provide an experimental determination of the protonation states of the copper(II)-coordinating residues and second-shell residues in LsAA9_A, paving the way for future neutron crystallographic studies of LPMO–carbohydrate complexes.

59 BASIC BIOLOGICAL SCIENCES↗

Explosive nucleation and growth of Pb islands on Ge(111) below room temperature via collective diffusion

Nucleation is a fundamental process in nature controlling phase transitions and pattern formation. Classical nucleation is based on the gradual aggregation of diffusing atoms after a critical cluster size is reached. Contrary to these expectations, we have observed in real time the formation of perfect Pb(111) islands with more than 10 5 atoms emerging out of the compressed wetting layer within a few seconds during growth of Pb on Ge(111) below room temperature. Pb deposited on Ge(111) in a temperature range between −30 °C and 10 °C exhibited explosive nucleation of height-selected islands upon reaching a critical coverage of 1.33 ± 0.07 ML with respect to Ge(111). Island nucleation was fueled by the 2% compression of the Pb wetting layer at the critical coverage. The island areas grew linearly with time, exhibiting collective diffusion, where thousands of atoms follow correlated, non-random walk diffusion. The total growth rate was higher with increasing temperature. Density functional theory simulations of the chemical potential and binding sites of the Pb/Ge(111) system give insight into the role of the compression of the wetting layer and the strain within the growing Pb layers, which explain this nonclassical behavior of the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Renewal: Coherent control of spin states in organic electronics – discovery and investigation of complex room-temperature magnetic quantum excitations

In the course of four funding cycles of this project, its research focused on the exploration and understanding of spin-dependent electronic processes in organic semiconductors. It aimed to investigate the potential of harnessing the spin degree of freedom in organic materials for various applications such as spin electronics, quantum information, sensors, and as well as quantum coherent spin phenomena of charge carrier states in organic semiconductors, with the aim to develop room-temperature-based quantum applications. Specifically, the project aimed to: Apply new diagnostic tools, i.e. spin spectroscopy techniques, for paramagnetic charge carrier states in organic semiconductors, based on coherent control with pulsed electron spin resonance to understand spin relaxation and spin mixing mechanisms in organic semiconductor materials and devices such as OLEDs. Explore the nature of charge carrier spin-coupling and pathways for its manipulation to control the physical behaviors of these materials. This involves investigating spin interactions through materials structure, composition, morphological dependencies, isotopic effects, and externally applied electric and magnetic fields, with the goal to manipulate electrical and optical material properties by adjusting spin-orbit, spin-dipolar, spin-exchange, as well as spin-hyperfine interactions to open up this materials class for new applications. Study spin-dependent charge carrier transport and recombination and how these observables are governed by spin-propagation, especially coherent spin propagation as well as collective spin-effects such as the spin-Dicke effect and resonant multi-photon magnetic dipole transitions. The project utilized pulsed electrically detected magnetic resonance (pEDMR) and pulsed optically detected magnetic resonance (pODMR) techniques over a wide frequency range. These techniques enabled the observation and quantification of various spin-spin coupling types, including spin-exchange, spin-dipolar, hyperfine, and spin-orbit interactions. The project will leverage low- to mid-frequency pEDMR/pODMR facilities and collaboration with the National High Magnetic Field Laboratory.

36 MATERIALS SCIENCE↗

Ordering of room-temperature magnetic skyrmions in a polar van der Waals magnet

Abstract Control and understanding of ensembles of skyrmions is important for realization of future technologies. In particular, the order-disorder transition associated with the 2D lattice of magnetic skyrmions can have significant implications for transport and other dynamic functionalities. To date, skyrmion ensembles have been primarily studied in bulk crystals, or as isolated skyrmions in thin film devices. Here, we investigate the condensation of the skyrmion phase at room temperature and zero field in a polar, van der Waals magnet. We demonstrate that we can engineer an ordered skyrmion crystal through structural confinement on the μ m scale, showing control over this order-disorder transition on scales relevant for device applications.

36 MATERIALS SCIENCE↗

Soft x-ray detection for small satellites with a commercial CMOS sensor at room temperature

Recently CMOS (complementary metal-oxide-semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. Additionally, while operating the device at room temperature, we measure energy resolutions (FWHM) of 47 eV at 250 eV and and 77 eV 1700 eV which are comparable to the performance of the Chandra ACIS and the Suzaku XIS. Furthermore, we demonstrate that the IMX290LLR can withstand radiation up to 17.1 krad, making it suitable for use on spacecraft in low earth orbit.

47 OTHER INSTRUMENTATION↗

Reversible non-volatile electronic switching in a near-room-temperature van der Waals ferromagnet

Abstract Non-volatile phase-change memory devices utilize local heating to toggle between crystalline and amorphous states with distinct electrical properties. Expanding on this kind of switching to two topologically distinct phases requires controlled non-volatile switching between two crystalline phases with distinct symmetries. Here, we report the observation of reversible and non-volatile switching between two stable and closely related crystal structures, with remarkably distinct electronic structures, in the near-room-temperature van der Waals ferromagnet Fe 5− δ GeTe 2 . We show that the switching is enabled by the ordering and disordering of Fe site vacancies that results in distinct crystalline symmetries of the two phases, which can be controlled by a thermal annealing and quenching method. The two phases are distinguished by the presence of topological nodal lines due to the preserved global inversion symmetry in the site-disordered phase, flat bands resulting from quantum destructive interference on a bipartite lattice, and broken inversion symmetry in the site-ordered phase.

36 MATERIALS SCIENCE↗

Room-temperature valence transition in a strain-tuned perovskite oxide

Abstract Cobalt oxides have long been understood to display intriguing phenomena known as spin-state crossovers, where the cobalt ion spin changes vs. temperature, pressure, etc. A very different situation was recently uncovered in praseodymium-containing cobalt oxides, where a first-order coupled spin-state/structural/metal-insulator transition occurs, driven by a remarkable praseodymium valence transition. Such valence transitions, particularly when triggering spin-state and metal-insulator transitions, offer highly appealing functionality, but have thus far been confined to cryogenic temperatures in bulk materials (e.g., 90 K in Pr 1- x Ca x CoO 3 ). Here, we show that in thin films of the complex perovskite (Pr 1- y Y y ) 1- x Ca x CoO 3-δ , heteroepitaxial strain tuning enables stabilization of valence-driven spin-state/structural/metal-insulator transitions to at least 291 K, i.e., around room temperature. The technological implications of this result are accompanied by fundamental prospects, as complete strain control of the electronic ground state is demonstrated, from ferromagnetic metal under tension to nonmagnetic insulator under compression, thereby exposing a potential novel quantum critical point.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Highly-Cyclable Room-Temperature Phosphorene Polymer Electrolyte Composites for Li Metal Batteries

Despite significant interest toward solid-state electrolytes owing to their superior safety in comparison to liquid-based electrolytes, sluggish ion diffusion and high interfacial resistance limit their application in durable and high-power density batteries. Here, a novel quasi-solid Li + ion conductive nanocomposite polymer electrolyte containing black phosphorous (BP) nanosheets is reported. The developed electrolyte is successfully cycled against Li metal (over 550 h cycling) at 1 mA cm -2 at room temperature. The cycling overpotential is dropped by 75% in comparison to BP-free polymer composite electrolyte indicating lower interfacial resistance at the electrode/electrolyte interfaces. Molecular dynamics simulations reveal that the coordination number of Li + ions around (trifluoromethanesulfonyl)imide (TFSI - ) pairs and ethylene-oxide chains decreases at the Li metal/electrolyte interface, which facilitates the Li + transport through the polymer host. Here, density functional theory calculations confirm that the adsorption of the LiTFSI molecules at the BP surface leads to the weakening of N and Li atomic bonding and enhances the dissociation of Li + ions. This work offers a new potential mechanism to tune the bulk and interfacial ionic conductivity of solid-state electrolytes that may lead to a new generation of lithium polymer batteries with high ionic conduction kinetics and stable long-life cycling.

2D materials↗

Large spin Hall effect in Si at room temperature

Silicon's weak intrinsic spin-orbit coupling and centrosymmetric crystal structure are a critical bottleneck to the development of Si spintronics, because they lead to an insignificant spin Hall effect (spin current generation) and inverse spin Hall effect (spin current detection). In this work, we undertake current, magnetic field, crystallography dependent magnetoresistance, and magnetothermal transport measurements to study the spin transport behavior in freestanding Si thin films. We observe a large spin Hall magnetoresistance in both $\mathcal{p}$ – Si and $\mathcal{n}$ – Si at room temperature and it is an order of magnitude larger than that of Pt. One explanation of the unexpectedly large and efficient spin Hall effect is spin-phonon coupling instead of spin-orbit coupling. The macroscopic origin of the spin-phonon coupling can be large strain gradients that can exist in the freestanding Si films. This discovery in a light, earth abundant and centrosymmetric material opens a new path of strain engineering to achieve spin dependent properties in technologically highly developed materials.

36 MATERIALS SCIENCE↗

Impact of annealing at 1000°C in flowing He with low O 2 concentration on the room temperature tensile properties of Mo alloys

NorthStar is developing an accelerator-based technology to produce the medical isotope Mo-99. A previous ORNL report (ORNL/SPR-2022/2490) studied the oxidation behavior of Mo in flowing He with low oxygen content at 800°C and 1000°C and it was shown that an O 2 concentration lower than ~5ppm (μ1/1) is required to achieve acceptable oxidation rates for wrought or powder metallurgy (PM) Mo. Oxidation may also impact the mechanical properties of Mo and this report summarizes tensile results at room temperature on wrought and PM Mo before and after exposure at 1000°C in flowing He with O 2 concentration varying from 1 to 15 ppm O 2 . It was found that oxidation at 1000°C results in a significant decrease of Mo strength and ductility with brittle intergranular fracture surfaces, likely due to the segregation of oxygen at grain boundaries. For the PM Mo material, the decrease in strength and ductility was also observed after annealing in vacuum at 1000°C, indicating that the diffusion of the oxygen trapped in the material pores to grain boundaries after 20-100h at 1000°C is sufficient to embrittle the material. Finally, initial results on actual aMo and high-density disks provided by NorthStar revealed the lack of ductility of the materials due to the specific disk microstructure.

36 MATERIALS SCIENCE↗

Confined Room-Temperature Ferromagnetism in Kagome (Fe 3 Sn 2 /CoSn) Superlattices

We reveal the presence of robust ferromagnetism in topological kagome (Fe 3 Sn 2 /CoSn) ×n superlattices via polarized neutron reflectivity (PNR) and magnetization measurements. Using molecular beam epitaxy, we have synthesized superlattices of alternating ferromagnetic Fe 3 Sn 2 and paramagnetic CoSn layers, the interfacial integrity of which is confirmed using scanning transmission electron microscopy. Magnetization depth profiles, obtained by fitting the PNR data, confirm the presence of ferromagnetism in the confined Fe 3 Sn 2 layers at room temperature, with minimal thickness dependence down to 2 nm. A net magnetization is found in the near-surface region of CoSn, which we attribute to surface oxidation. Our results demonstrate that superlattice engineering is a means to confine ferromagnetism in kagome metals, enabling future studies of thickness-dependent anomalous Hall and Nernst effects as well as spin-dependent transport and tunneling in device structures.

kagome metals↗

Room-Temperature Ferromagnetism at an Oxide-Nitride Interface

Heterointerfaces have led to the discovery of novel electronic and magnetic states because of their strongly entangled electronic degrees of freedom. Single-phase chromium compounds always exhibit antiferromagnetism following the prediction of the Goodenough-Kanamori rules. So far, exchange coupling between chromium ions via heteroanions has not been explored and the associated quantum states are unknown. In this work, we report the successful epitaxial synthesis and characterization of chromium oxide (Cr 2 O 3 )-chromium nitride (CrN) superlattices. Room-temperature ferromagnetic spin ordering is achieved at the interfaces between these two antiferromagnets, and the magnitude of the effect decays with increasing layer thickness. First-principles calculations indicate that robust ferromagnetic spin interaction between Cr 3+ ions via anion-hybridization across the interface yields the lowest total energy. This work opens the door to fundamental understanding of the unexpected and exceptional properties of oxide-nitride interfaces and provides access to hidden phases at low-dimensional quantum heterostructures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗