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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Improved interfacial li-ion transport in composite polymer electrolytes via surface modification of LLZO

Composite polymer electrolytes that incorporate ceramic fillers in a polymer matrix offer mechanical strength and flexibility as solid electrolytes for lithium metal batteries. However, fast Li + transport between polymer and Li + -conductive filler phases is not a simple achievement due to high barriers for Li + exchange across the interphase. This study demonstrates how modification of Li 7 La 3 Zr 2 O 12 (LLZO) nanofiller surfaces with silane chemistries influences Li + transport at local and global electrolyte scales. Anhydrous reactions covalently link amine-functionalized silanes [(3-aminopropyl)triethoxysilane (APTES)] to LLZO nanoparticles, which protects LLZO in air. APTES functionalization lowers the poly (ethylene oxide) (PEO)-LLZO interphase resistance to half that of unmodified LLZO and increases effective Li + transference number, while insulating Al 2 O 3 completely blocks ion exchange and lowers transference number and conductivity in PEO-lithium bis(trifluoromethanesulfonyl)imide (LiTFSI)-LLZO composites. Modeling an inner resistive interphase between LLZO and PEO surrounded by an outer conductive interphase explains non-linear conductivity trends. Solid-state 7 Li & 6 Li nuclear magnetic resonance shows Li + only exchanges between PEO-LiTFSI and some LLZO interphase, with no appreciable Li + transport through bulk LLZO. Surface functionalization is a promising path toward lowering the polymer-ceramic interphase resistance. This work demonstrates that local changes in Li + transport affect macroscopic performance, highlighting the intricate relationships between all interfaces in inherently heterogeneous composite polymer electrolytes.

25 ENERGY STORAGE↗
DOE OSTI2022

Gate-Tunable Transport in Quasi-One-Dimensional α-Bi 4 I 4 Field Effect Transistors

Bi 4 I 4 belongs to a novel family of quasi-one-dimensional (1D) topological insulators (TIs). While its β phase was demonstrated to be a prototypical weak TI, the α phase, long thought to be a trivial insulator, was recently predicted to be a rare higher order TI. Here, we report the first gate tunable transport together with evidence for unconventional band topology in exfoliated α-Bi 4 I 4 field effect transistors. We observe a Dirac-like longitudinal resistance peak and a sign change in the Hall resistance; their temperature dependences suggest competing transport mechanisms: a hole-doped insulating bulk and one or more gate-tunable ambipolar boundary channels. Our combined transport, photoemission, and theoretical results indicate that the gate-tunable channels likely arise from novel gapped side surface states, two-dimensional (2D) TI in the bottommost layer, and/or helical hinge states of the upper layers. Markedly, a gate-tunable supercurrent is observed in an α-Bi 4 I 4 Josephson junction, underscoring the potential of these boundary channels to mediate topological superconductivity.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1961

Exploratory Environmental Tests of Several Heat Shields

Exploratory tests have been conducted with several conceptual radiative heat shields of composite construction. Measured transient temperature distributions were obtained for a graphite heat shield without insulation and with three types of insulating materials, and for a metal multipost heat shield, at surface temperatures of approximately 2,000 F and 1,450 F, respectively, by use of a radiant-heat facility. The graphite configurations suffered loss of surface material under repeated irradiation. Temperature distribution calculated for the metal heat shield by a numerical procedure was in good agreement with measured data. Environmental survival tests of the graphite heat shield without insulation, an insulated multipost heat shield, and a stainless-steel-tile heat shield were made at temperatures of 2,000 F and dynamic pressures of approximately 6,000 lb/sq ft, provided by an ethylene-heated jet operating at a Mach number of 2.0 and sea-level conditions. The graphite heat shield survived the simulated aerodynamic heating and pressure loading. A problem area exists in the design and materials for heat-resistant fasteners between the graphite shield and the base structure. The insulated multipost heat shield was found to be superior to the stainless-steel-tile heat shield in retarding heat flow. Over-lapped face-plate joints and surface smoothness of the insulated multi- post heat shield were not adversely affected by the test environment. The graphite heat shield without insulation survived tests made in the acoustic environment of a large air jet. This acoustic environment is random in frequency and has an overall noise level of 160 decibels.

Goodman, George P.↗
DOE OSTI2020

Scaling behavior of the quantum phase transition from a quantum-anomalous-Hall insulator to an axion insulator

The phase transitions from one plateau to the next plateau or to an insulator in quantum Hall and quantum anomalous Hall (QAH) systems have revealed universal scaling behaviors. A magnetic-field-driven quantum phase transition from a QAH insulator to an axion insulator was recently demonstrated in magnetic topological insulator sandwich samples. Here, we show that the temperature dependence of the derivative of the longitudinal resistance on magnetic field at the transition point follows a characteristic power-law that indicates a universal scaling behavior for the QAH to axion insulator phase transition. Similar to the quantum Hall plateau to plateau transition, the QAH to axion insulator transition can also be understood by the Chalker–Coddington network model. We extract a critical exponent κ ~ 0.38 ± 0.02 in agreement with recent high-precision numerical results on the correlation length exponent of the Chalker–Coddington model at ν ~ 2.6, rather than the generally-accepted value of 2.33.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

High-temperature, irradiation-resistant thermocouple, coaxial thermocouple, and related methods

A coaxial thermocouple includes a wire, an insulation layer surrounding the wire, a sheath surrounding the insulation layer, and an electrical junction formed between the wire and the sheath and at one longitudinal end of the coaxial thermocouple, the electrical junction including a swaged end with an outer diameter of the sheath reducing in diameter along a longitudinal length of the coaxial thermocouple until the sheath contacts the wire within the insulation layer. The wire includes a first material and the sheath includes a second material where the first material includes one of molybdenum (Mo) or niobium (Nb) and the second material includes the other of molybdenum (Mo) or niobium (Nb).

Skifton, Richard S.↗
NASA NTRS2018

All-Elastomer 3-Axis Contact Resistive Tactile Sensor Arrays and Micromilled Manufacturing Methods Thereof

At least one tactile sensor includes an insulating layer and a conductive layer formed on the surface of the insulating layer. The conductive layer defines at least one group of flexible projections extending orthogonally from the surface of the insulating layer. The flexible projections include a major projection extending a distance orthogonally from the surface and at least one minor projection that is adjacent to and separate from the major projection wherein the major projection extends a distance orthogonally that is greater than the distance that the minor projection extends orthogonally. Upon a compressive force normal to, or a shear force parallel to, the surface, the major projection and the minor projection flex such that an electrical contact resistance is formed between the major projection and the minor projection. A capacitive tactile sensor is also disclosed that responds to the normal and shear forces.

Charalambides, Alexandros↗
NASA NTRS1982

J series thruster isolator failure analysis

Three Hg propellant isolators (two cathode and one main) failed during testing in the Mission Profile Life Test. These failures involved contamination of the surface of the alumina insulating body which resulted in heating of the vaporizer by leakage current from the high voltage supply, with subsequent loss of propellant flow rate control. Failure analysis of the isolators showed the surface resistance was temperature dependent and that the alumina could be restored to its original insulating state by grit blasting the surface. The contaminant was identified as carbon and the most likely sources identified as ambient facility hydrocarbons, directed back-sputtered facility materials, and outgassing from organic insulating materials within the thruster envelope. Methods to eliminate contamination from each of these sources are described.

Campbell, J. W.↗
NASA NTRS1991

Improving the temperature performance of low-density ceramic heatshields through sol-gel processing

The performance of rigid insulations for use as thermal protection materials on reentry vehicles can be characterized by their resistance to dimensional and morphological change when exposed to an isothermal environment equivalent to that generated in entry. Improvements in these material characteristics for alumina-enhanced thermal barrier insulation by compositional modification through sol-gel processing are reported.

Bull, Jeffrey↗
DOE OSTI2023

Polaron-induced metal-to-insulator transition in vanadium oxides from density functional theory calculations

Vanadium oxides have been extensively studied as phase-change memory units in artificial synapses for neuromorphic computing due to their metal-insulator transitions (MIT) at or near room temperature. Recently, injection of charge carriers into vanadium oxides, e.g., via optically via a heterostructure, has been proposed as an alternative switching mechanism and also potentially as a means to tune the MIT temperature. In this study, we explore the formation of small polarons in the low temperature (LT) insulating phases for V 3 O 5 ,VO 2 , and V 2 O 3 , and the barriers to their migration using density functional theory calculations. We find that V 3 O 5 exhibits very low hole and electron polaron migration barriers (<100 meV) compared to V 2 O 3 and VO 2 , leading to much higher estimated polaronic conductivity. We also link the relative migration barriers to the amount of distortion that has to travel when the polaron migrate from one site to another. Polarons in V 3 O 5 also have smaller binding energies to vanadium and oxygen vacancy defects. Furthermore, these results suggest that the triggering of the MIT via injection of charge carriers are due to the formation of small polarons that can migrate rapidly through the crystal.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Assessment of MQXF Quench Heater Insulation Strength and Test of Modified Design

The HL-LHC interaction region magnet triplets (Q1,Q2, and Q3) will be composed of superconducting Nb 3 Sn quadrupoles. The MQXF quadrupole protection system is based on CLIQ (Coupling-Loss Induced Quench system) and outer layer quench heaters. Furthermore, this paper reports a summary of quench heaters to coil high voltage tests performed on MQXF short and long coils in air after fabrication, and in air and He gas after magnet training. Breakdown voltage values demonstrate good margin with respect to the Electrical design criteria for the HL-LHC inner triplet mag-nets. A modification in the quench heater installation-with an extra layer of fiber glass between the coil and the quench heater trace-has been proposed and tested in a mirror magnet to further increase electrical margins. Results demonstrated improvements of high voltage margin at the expense of a clear increase of hot spot temperature.The baseline heater to coil insulation was assessed to be able to guarantee safe operation for the Nb 3 Sn quadrupole magnets for the interaction regions of HL-LHC.

43 PARTICLE ACCELERATORS↗
NASA NTRS1988

Ceramic Fabric Coated With Silicon Carbide

Material used as high-temperature shell. Ceramic fabric coated with silicon carbide (SiC) serves as tough, heat-resistant covering for other refractory materials. Developed to protect reusable insulating tiles on advanced space transportation systems. New covering makes protective glaze unnecessary. Used on furnace bricks or on insulation for engines.

Riccitiello, S. R.↗
NASA NTRS1991

Effect of sinter fracture and ohmic resistance on capacity retention in the nickel oxide electrode

The lifetime of batteries which utilize the nickel oxide electrode is often limited because this electrode loses a significant portion of its capacity as it is cycled. It is asserted that this capacity loss may often be attributed to cracking or separation of the conductive nickel sinter in the electrode, which forces electronic current to pass through the poorly conducting hydrated oxide and thus imposes a significant ohmic resistance. The model indicates that the oxide develops a nearly insulating layer which prevents complete discharge in the cycled electrode at usable rates. The capacity retention can be improved by reducing the cyclic stresses or strengthening the current collecting structure, redistributing it to provide a shorter current path through the solid phase, or by increasing the conductivity of the oxide to delay the formation of an insulating layer.

Lanzi, Oscar↗
NASA NTRS1992

The mechanical properties of polyimide films after exposure to high pH

Wiring failures linked to insulation damage have drawn much attention in the aerospace industry and concerns have developed regarding the stability and safety of polyimide insulated electrical wire. Several polyimides were selected for evaluation for resistance to degradation by various aqueous alkaline solutions. The polyimides under evaluation include commercially available films such as Kapton (tk), Apical (tk), LaRC(tk)-TPI, and Upilex(tk)R and S, as well as a number of experimental films prepared by NASA Langley. Thermally imidized films were studied for their retention of mechanical properties after exposure to high pH solutions under stressed conditions.

Croall, Catharine I.↗
NASA NTRS1996

SNS Devices With Pinhole-Defined Active Regions

Superconductor/normal conductor/superconductor (SNS) microbridge devices with pinhole-defined active regions undergoing development. Device includes thin, electrically insulating layer deposited epitaxially, with controlled formation of pinholes, on one of two superconducting layers. Normally conducting metal deposited epitaxially in pinholes and on insulating layer, forming electrical contact between two superconducting layers. Junction resistances and maximum junction voltages expected to be increased.

Hunt, Brian D.↗
DOE OSTI2023

Spreading resistance effects in tunneling spectroscopy of α–RuCl 3 and Ir 0.5 Ru 0.5 Cl 3

The Mott insulating state is the progenitor of many interesting quantum phases of matter including the famous high-temperature superconductors and quantum spin liquids. A recent candidate for novel spin liquid phenomena is α–RuCl 3 , a layered honeycomb Mott insulator whose electronic structure has been a source of mystery. In particular, scanning tunneling spectroscopy has indicated a Mott gap in α–RuCl 3 that is much lower than the 2-eV value observed in photoemission measurements. Here, we show that the origin of this discrepancy is a spreading resistance artifact associated with tunneling into highly resistive materials by comparing with prior experiments and numerical modeling. Furthermore, a similar phenomenon is also observed in a substitutional alloy, Ir 0.5 Ru 0.5 Cl 3 , that has a higher resistivity than the parent compound. While the tunneling measurements cannot be used to accurately measure the sample density of states for these materials, we can take advantage of the spreading resistance sensitivity to quantify the anisotropic resistivity of these layered materials and connect to previous macroscopic transport observations.

2-dimensional systems↗
DOE OSTI2025

Gate control of electron correlations towards Mott field effect transistors (MottFET)

The modulation of channel conductance in field-effect transistors (FETs) via metal-insulator-semiconductor structures has revolutionized information processing and storage. However, the limitations of silicon-based FETs in electrical switching have driven the search for new materials capable of overcoming these constraints. Electrostatic gating of competing electronic phases in a Mott material near its metal-to-insulator transition (MIT) offers the prospects of substantial modulation of the conducting electrons and electrical resistivity through small changes in band filling. While electrostatic control of the MIT has been previously reported, the advancement of Mott materials toward novel Mott-based transistors, MottFETs requires the realization of their unique physical properties in a solid-state device. In this study, we present gate control of electron correlation using a solid-state device utilizing the oxide Mott system La 1-x Sr x VO 3 as a correlated FET channel. We report on a gate resistance response that cannot be explained in a purely electrostatic framework. This behavior suggests an enhancement in effective mass and a reduction in effective carrier density as the system approaches its insulating state, consistent with theoretical predictions for Mott systems, suggesting at least 100× charge gain originating from the correlated behavior. These preliminary results pave the way toward the development of highly efficient, low-power electronic devices that could surpass the performance bottlenecks of conventional FETs by leveraging the electronic phase transitions of correlated electron systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Ground state of Ce 3 Bi 4 Pd 3 unraveled by hydrostatic pressure

Noncentrosymmetric Ce 3 Bi 4 Pd 3 has attracted a lot of attention as a candidate for strongly correlated topological material, yet its experimental ground state remains a matter of contention. Two conflicting scenarios have emerged from a comparison to the prototypical Kondo insulator Ce 3 Bi 4 Pd 3 : Either Ce 3 Bi 4 Pd 3 is a spin-orbit-driven topological semimetal or a Kondo insulator with smaller Kondo coupling than its Pt counterpart. Here, we determine the ground state of Ce 3 Bi 4 Pd 3 via electrical resistivity measurements under hydrostatic pressure, which is a clean symmetry-preserving tuning parameter that increases hybridization but virtually preserves spin-orbit coupling. Ce 3 Bi 4 Pd 3 becomes more insulating under pressures up to 2.3 GPa, which is a signature of Ce-based Kondo insulating materials in the considered pressure range. Its small zero-pressure gap increases quadratically with pressure, similar to the behavior observed in the series Ce 3 Bi 4 (Pt 1 - x Pd x ) 3 , which indicates that Pt substitution and applied pressure have a similar effect. Finally, our result not only demonstrates that Kondo coupling, rather than spin-orbit coupling, is the main tuning parameter in this class of materials, but it also establishes that Ce 3 Bi 4 Pd 3 has a narrow-gap Kondo insulating ground state.

36 MATERIALS SCIENCE↗