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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Texts included: short circuit analysis, voltage reversal, high temperature exposure, parallel loading sharing, capacity tests, shock and vibration tests, and assembly tests. Both the AA and D cell configurations were tested. Certification of the cells is discussed and applications are highlighted.
The Navy's position on safety of lithium batteries is discussed. Testing includes: short circuit with all fuses bypassed; forced discharge at the fuse value; and a modified incineration test.
A simple proton damage model for GaAs solar cells is derived and compared to experimental values of change in short circuit currents. The recombination cross section associated with the defects was determined from the experimental comparison to be approximately 1.2 x 10 to the -13th power sq cm in fair agreement with values determined from the deep level transient spectroscopy technique.
The Power Extension Package (PEP), a 32-kilowatt, flexible-substrate, retrievable solar array system for use on the Space Shuttle, is described. It is noted that solar cell costs will be reduced by increasing cell area and simplifying cell and coverglass fabrication processes and specifications. The tests that have been carried out on the cells are described, among them a unique radiation damage test and a side-by-side comparison of candidate cell types with pre- and post-irradiation airplane calibration of outer space short-circuit current
GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Elevated temperature experiments were conducted to evaluate the electrical stability of cells with different contact materials. These experiments indicate that for operation of GaAs heteroface solar cells at elevated temperatures, front contact metals must be carefully chosen. The short circuit current varied by only about 3% for cells with Pd/Ag contacts that were heated to 240 C for a total of 500 hours. However, a total decrease in the open circuit voltage of about 20% was observed for these cells. After heating cells to 400 C, large changes in open circuit voltage were observed for cells with Pd/Ag, Pd/Au, Pd, Ag, and Ti contacts; however, preliminary results indicate more stable open circuit voltages for cells with Au, Cr, Zn, and Cr/Au contacts.
The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.
The silicon-on-ceramic (SOC) process produces thin layers of silicon on inexpensive ceramic substrates. The layers are produced by unidirectional solidification of molten silicon, and are polycrystalline. Solar cells made from SOC material have performed with a conversion efficiency of 10.5%. In connection with the objective to improve the efficiency of SOC solar cells, an investigation was conducted to assess the relative importance of grain boundaries and impurities. In order to separate the two effects, light-beam-induced current (LBIC) measurements of the short-circuit current were made using a micron-sized light beam from a monochromator. The LBIC measurements are closely related to solar cell performance since the technique identifies the various spatial and spectral contributions to solar cell current. On the basis of the obtained results, it appears that structural defects are more important than chemical defects in limiting the performance of present SOC solar cells.
Calculations of the equilibrium conditions for continuous radiation damage and thermal annealing are reported. The calculations are based on a thermochemical model developed to analyze the incorporation of point imperfections in GaAs, and modified by introducing the radiation to produce native lattice defects rather than high-temperature and arsenic atmospheric pressure. The concentration of a set of defects, including vacancies, divacancies, and impurity vacancy complexes, are calculated as a function of temperature. Minority carrier lifetimes, short circuit current, and efficiency are deduced for a range of equilibrium temperatures. The results indicate that GaAs solar cells could have a mission life which is not greatly limited by radiation damage.
The effect of using gridded back contacts on silicon solar cells made with Al baked surface field (BSF) was experimentally investigated and found to result in a significant increase in conversion efficiency due to higher short-circuit current. An increase of 5 to 8% was noted for thin cells while a smaller increase was observed for standard thickness cells. Several possible explanatory mechanisms are suggested and summarized, including stress relief, incomplete BSF formation, improved back surface recombination velocity, and improved optical reflection off the back silicon-air interface.
The development and implementation of an instrument for spectral measurement of solar simulators for testing solar cell characteristics is reported. The device was constructed for detecting changes in solar simulator behavior and for comparing simulator spectral irradiance to solar AM0 output. It consists of a standard solar cell equipped with a band pass filter narrow enough so that, when flown on a balloon to sufficient altitude along with sufficient numbers of cells, each equipped with filters of different bandpass ratings, the entire spectral response of the standard cell can be determined. Measured short circuit currents from the balloon flights thus produce cell devices which, when exposed to solar simulator light, have a current which does or does not respond as observed under actual AM0 conditions. Improvements of the filtered cells in terms of finer bandpass filter tuning and measurement of temperature coefficients are indicated.
As part of the Jet Propulsion Laboratory's Low-Cost Solar Array Project, the susceptibility of fat-plate modules to hot-spot problems is investigated. Hot-spot problems arise in modules when the cells become back-biased and operate in the negative-voltage quadrant, as a result of short-circuit current mismatch, cell cracking or shadowing. The details of a qualification test for determining the capability of modules of surviving field hot-spot problems and typical results of this test are presented. In addition, recommended circuit-design techniques for improving the module and array reliability with respect to hot-spot problems are presented.
Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.
Electron beam probe technique estimate electron/hole capture cross sections in semiconductors with wide band gaps. Amplitude-modulated electron beam induces short-circuit current collected by ohmic contacts. Phase shift between this current and electron-beam current measured as function of frequency. Results of measurements used to ascertain recombination rates and energy levels.
Device output and durability increased. Photosensitive GaAs Schottkybarrier device modified by addition of intermediate layer of refractory or alkaline earth metal. Photovoltaic cells and photosensors made with new design put out higher short-circuit currents and better able to withstand rigors of handling and connection to other circuit components.
The basic mechanism associated with the photovoltaic phenomena observed in the R.F. sputtered BaTiO3/silicon system is presented. Series of measurements of short circuit photocurrents and open circuit photovoltage were made. The composition depth profiles and the interface characteristics of the BaTiO3/silicon system were investigated for a better understanding of the electronic properties. A Scanning Auger Microprobe combined with ion in depth profiling were used.
A four cylinder Stirling engine, transient engine simulation computer program is presented. The program is intended for controls analysis. The associated engine model was simplified to shorten computer calculation time. The model includes engine mechanical drive dynamics and vehicle load effects. The computer program also includes subroutines that allow: (1) acceleration of the engine by addition of hydrogen to the system, and (2) braking of the engine by short circuiting of the working spaces. Subroutines to calculate degraded engine performance (e.g., due to piston ring and piston rod leakage) are provided. Input data required to run the program are described and flow charts are provided. The program is modular to allow easy modification of individual routines. Examples of steady state and transient results are presented.
The voltage current (V-I) characteristics of the photovoltaic array were studied under actual environmental conditions. A method of data acquisition was devised that uses a capacitor charge technique to obtain the V-I characteristic and a computerized data system to display, record and process the data. The capacitor charge technique uses an array shorting transistor and a capacitor bank to sweep the array operating voltage and current from short circuit to open circuit in a specified time (approximately 125 ms). The computerized data system is synchronized with this transition and repetitively samples the array voltage and current during the transition and records the ambient conditions. This data is then normalized by the computer to standard conditions (100 mW/sq cm, 28 C) and is available in tabular and graphic form for both the voltage current and voltage power characteristics. The capacitor charge technique is described.
The performance limiting mechanisms in large grain (greater than 1-2 mm in diameter) polycrystalline silicon was investigated by measuring the illuminated current voltage (I-V) characteristics of the minicell wafer set. The average short circuit current on different wafers is 3 to 14 percent lower than that of single crystal Czochralski silicon. The scatter was typically less than 3 percent. The average open circuit voltage is 20 to 60 mV less than that of single crystal silicon. The scatter in the open circuit voltage of most of the polycrystalline silicon wafers was 15 to 20 mV, although two wafers had significantly greater scatter than this value. The fill factor of both polycrystalline and single crystal silicon cells was typically in the range of 60 to 70 percent; however several polycrystalline silicon wafers have fill factor averages which are somewhat lower and have a significantly larger degree of scatter.