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At least 379 records · Page 21

Suppression of quasiparticle poisoning in transmon qubits by gap engineering

The performance of various superconducting devices operating at ultra-low temperatures is impaired by the presence of non-equilibrium quasiparticles. Inelastic quasiparticle (QP) tunneling across Josephson junctions in superconducting qubits results in decoherence and spurious excitations and, notably, can trigger correlated errors that severely impede quantum error correction. In this work, we use "gap engineering" to suppress the tunneling of low-energy quasiparticles in Al-based transmon qubits, a leading building block for superconducting quantum processors. By implementing potential barriers for QP, we strongly suppress QP tunneling across the junction and preserve charge parity for over $10^3$ seconds. The suppression of QP tunneling also results in a reduction in the qubit energy relaxation rates. The demonstrated approach to gap engineering can be easily implemented in all Al-based circuits with Josephson junctions.

Kamenov, Plamen↗

The Building Business Network (B-Biz): Addressing Gaps in the High-Performance Building Technology Market, Especially for Underserved Customers

Increased market intelligence and business model innovation is needed to build contractor confidence in high-performance building technologies in order to increase the speed and scale of adoption to meet the U.S. Department of Energy's building stock decarbonization goals. Although there have been important innovations in energy efficiency, affordability, and decarbonization of building technologies, consumers are not purchasing these technologies at the necessary speed and scale partially due to a gap in institutional understanding around barriers contractors face in providing and servicing these technologies. Small businesses in this market must mitigate risk around high-performance building technologies, limiting their opportunities in the market and impacting the rate of adoption. The Building Business Network (B-Biz) aims to provide high-performance building technology solutions to underserved customers by collaborating with local small businesses that provide and service high-performance building technologies in communities with the lowest rates of adoption. This research explores the current market, the importance of business models, and the opportunity to utilize small businesses to address market gaps in underserved communities.

B-Biz↗

A simple generalization of the energy gap law for nonradiative processes

For more than 50 years, an elegant energy gap (EG) law developed by Englman and Jortner [Mol. Phys. 18, 145 (1970)] has served as a key theory to understand and model the nearly exponential dependence of nonradiative transition rates on the difference of energy between the initial and final states. This work revisits the theory, clarifies the key assumptions involved in the rate expression, and provides a generalization for the cases where the effects of temperature dependence and low-frequency modes cannot be ignored. For a specific example where the low-frequency vibrational and/or solvation responses can be modeled as an Ohmic spectral density, a simple generalization of the EG law is provided. Test calculations demonstrate that this generalized EG law brings significant improvement over the original EG law. Both the original and generalized EG laws are also compared with the stationary phase approximations developed for electron transfer theory, which suggests the possibility of a simple interpolation formula valid for any value of EG.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of the electronic charge gap on LO bond-stretching phonons in undoped La 2 CuO 4 calculated using LDA + U

Typical density-functional theory calculations that wrongly predict undoped cuprates to be metallic also predict Cu-O half- and full-breathing phonon energies that are significantly softer than observed, presumably because of weak on-site Coulomb repulsion on the Cu 3d orbitals. We used DFT+U calculations with antiferromagnetic supercells of La 2 CuO 4 to establish correlation between the on-site repulsion strength, tuned via adjusting the value of U, and phonon dispersions. Here, we find that breathing and half-breathing phonons reach experimental values when U is tuned to obtain the correct optical gap and magnetic moments. We demonstrate that using distorted supercells within DFT+U is a promising framework to model phonons in undoped cuprates and other perovskite oxides with complex, interrelated structural and electronic degrees of freedom.

36 MATERIALS SCIENCE↗

Photovoltaics Based on Direct and Indirect Gap Semiconductors

Direct and thin, or indirect and thick absorbers can yield cells close to 30% but there are practical limits due to defects, cost, reliability. Tandems and new ideas are needed to minimize thermalization and entropy losses and to enable high absorptance in thin Si layers. Direct-gap absorbers have ~1000x higher recombination losses than Si, but being 100x thinner, the limiting 1-sun efficiencies are similar due to 100x higher G.

direct-gap↗

B—N–Bond–Embedded Triplet Terpolymers with Small Singlet–Triplet Energy Gaps for Suppressing Non–Radiative Recombination and Improving Blend Morphology in Organic Solar Cells

Suppressing the photon energy loss (E loss ), especially the non-radiative loss, is of importance to further improve the device performance of organic solar cells (OSCs). However, typical π-conjugated semiconductors possess a large singlet–triplet energy gap (ΔE ST ), leading to a lower triplet state than charge transfer state and contributing to a non-radiative loss channel of the photocurrent by the triplet state. Herein, a series of triplet polymer donors are developed by introducing a BNIDT block into the PM6 polymer backbone. Further, the high electron affinity of BNIDT and the opposite resonance effect of the B—N bond in BNIDT results in a lowered highest occupied molecular orbital (HOMO) and a largely reduced ΔE ST . Moreover, the morphology of the active blends is also optimized by fine-tuning the BNIDT content. Therefore, non-radiative recombination via the terminal triplet loss channels and morphology traps is effectively suppressed. The PNB-3 (with 3% BNIDT):L8-BO device exhibits both small ΔE ST and optimized morphology, favoring more efficient charge transfer and transport. Finally, the simultaneously enhanced V oc of 0.907 V, J sc of 26.59 mA cm –2 , and FF of 78.86% contribute to a champion PCE of 19.02%. Therefore, introducing B—N bonds into benchmark polymers is a possible avenue toward higher-performance of OSCs.

36 MATERIALS SCIENCE↗

Flow field design for zero-gap microbial electrolysis cells using synthetic and real wastewater

Increasing performance in microbial electrolysis cells (MECs) requires the development of optimized reactor configurations with minimal internal resistance and capable to operate with real wastewater. Here, the impact of two different flow fields (serpentine and circular) was examined in zero-gap MECs with synthetic and real wastewaters. The serpentine flow field enabled a uniform distribution of the electrolyte in the anode chamber, resulting in larger current densities at lower flow rates compared to the circular flow field. Electrochemical tests using synthetic media with high buffer capacity revealed more stable and higher performance with the serpentine flow field compared to the circular flow path, producing larger current density (23.7 ± 0.8 A/m 2 vs 21.9 ± 5.6 A/m 2 ), hydrogen production rate (75.8 ± 4.1 L/L-d vs 54.3 ± 2.4 L/L-d), cathodic coulombic efficiency (>91 % vs >50 %), and an overall lower internal resistance (12.5 ± 0.5 mΩm 2 vs 14.8 ± 3.7 mΩm 2 ). Continuous operation for over 30 days with real wastewater indicated higher tolerance of the MECs with serpentine flow field toward media with large concentration of suspended solids, producing a current density of 5.4 ± 1.1 A/m 2 and a hydrogen production rate of 22.2 ± 6.2 L/L-d. Furthermore, the results presented here underscore the importance of reactor design and architecture in optimizing MEC performance for hydrogen production from liquid wastes.

flow path↗

Advanced nuclear reactor integration opportunities for the pulp and paper industry in the U.S. context: Technical perspectives, gap analysis, and preliminary technoeconomic assessment

Pulp and paper (P&P) manufacturing requires a large amount of low-pressure (LP) steam to digest, wash wood fibers and dry pulp into paper. Most of the LP steam is extracted from backpressure turbines that produce power from high-pressure (HP) steam. This HP steam is generated from burning wood waste material; bark is burned in hog boilers, and lignin is boiled in a black liquor recovery boiler. In a typical integrated P&P mill, 50–100% of the steam is produced from these sources, while additional steam is produced in natural gas (NG), fuel oil, or coal boilers. The other energy-intensive process in the plant is the chemical-recovery section (e.g., lime kiln), which requires high-temperature processing from NG combustion to retrieve and recirculate spent chemicals. This paper assesses the energy and heat demand and material balances of a typical generic kraft pulp mill, along with the nuclear heat, steam, and power integration opportunities to replace conventional combustion systems. The paper also addresses steam and electricity generation through a comprehensive technical and engineering gap analysis of five different nuclear-integration opportunities and their process economics, thus enabling the lignin and bark to be further processed into biobased chemicals or fuels, as well as the potential to reduce overall emissions from kraft pulping. Preliminary findings have shown that the P&P industry could achieve technological benefits by integrating their current manufacturing process with small modular nuclear reactors (SMNRs) on a national level. This research aims to set the path forward for a cleaner and more resilient P&P industry.

Advanced nuclear reactor↗

Improved performance of a near-field thermophotovoltaic device by a back gapped reflector

Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) device. For example, a back surface reflector (BSR) is a common structure to improve the performance of TPV devices. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflections, affording a second chance for absorption. However, the effects of surface passivation and external luminescence introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV devices. Recently, a back gapped reflector (BGR) structure was proposed to greatly improve the performance of far-field TPV devices by reducing imperfect reflections at the semiconductor-metal interface. In the present work, the performance improvement on a thin-film, near-field InAs TPV device with a BGR is investigated, comparing its performance to that with a conventional metal BSR. Surface passivation conditions are also investigated to further improve the performance of TPV devices with back reflectors. Further, the output power and efficiency are calculated using an iterative model combining fluctuational electrodynamics and the full drift diffusion model. For the well-passivated condition, when the BSR is replaced by the BGR, the calculated conversion efficiency of the near-field TPV was improved from 16.4% to 21% and the output power was increased by 10%. Finally, the absorption of the back reflectors and external luminescence loss are analyzed to explain the performance improvement.

external luminescence↗

Lithography-Defined Semiconductor Moirés with Anomalous In-Gap Quantum Hall States

Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one especially interesting class of quantum materials, moiré superlattices (MSLs) formed by twisted bilayers of 2D materials, a wide range of novel phenomena are observed. However, there exist daunting challenges such as reproducibility and scalability of utilizing 2D MSLs for microelectronics and quantum technologies due to their exfoliate-tear-stack method. Here, we propose lithography-defined semiconductor MSLs, in which three fundamental parameters electron−electron interaction, spin−orbit coupling, and band topology are designable. We experimentally investigate quantum-transport properties in a moiré specimen made in an InAs quantum well. Strong anomalous in-gap states are observed within the same integer quantum Hall state. Our work opens up new horizons for studying 2D quantum-materials phenomena in semiconductors featuring superior industry-level quality and state-of-the-art technologies, and they may potentially enable new quantum-information and microelectronics technologies.

36 MATERIALS SCIENCE↗

PETN spark-gap detonators

The well-developed theory of Lorentz plasma that is dominated by electron–ion interactions is used to calculate the PETN arc characteristics. The spark-gap discharge current is a ramp with 10 to 25 ns rise time to peak and remaining constant subsequently. The approximate formulas for the arc channel conductivity, arc temperature, arc radius, and shock pressure from the arc are obtained from a system of nonlinear ordinary differential equations, which is the similarity solution of hydrodynamic equations similar to the Braginskii approximation. These arc parameters are given for the peak current ranging from 100 A to 1000 A and with different rise times. Representative cases are compared to the nonlinear ordinary differential equation code results. The shock pressures at the peak current are comparable to those from a typical commercial EBW bridgewire burst reported in the literature; the arc radius at the peak current is comparable to a typical bridgewire diameter of 0.0375 mm (e.g., RISI detonators, RP-1, and RP-80). The relevant Pop-Plot for low-density PETN is converted into an empirical detonation criterion, which is applicable to explosives subject to shocks of variable pressure. Finally, this criterion is then used to determine the detonation thresholds, which are comparable with test data obtained by Tucker, et al.

42 ENGINEERING↗

Anisotropic electron damping and energy gap in Bi 2 ⁢Sr 2 ⁢CaCu 2 ⁢O 8+𝛿

The many-body electron-electron interaction in cuprates causes broadening of the electronic bands in 𝒌 space, leading to a deviation from the standard Fermi liquid. While a 𝒌-dependent anisotropic electronic scattering (𝒌-DAES) has been assessed by photoemission, its fingerprint in 𝑸 space has been scarcely considered. Here, we explore the 𝑸-dependent electron dynamics in optimally doped Bi 2⁢ Sr 2 ⁢CaCu 2 ⁢O 8+𝛿 through the evolution of low-energy charge excitations as measured by resonant inelastic x-ray scattering (RIXS). In the normal state, the RIXS spectra display a continuum of excitations down to 0 meV, while the superconducting state features a spectral weight suppression below 80 meV without any enhancement at higher energies. To interpret the energy and 𝑸 evolution of our data, we introduce a phenomenological expression of the charge susceptibility by including the 𝒌-DAES. We show that only the charge susceptibility with 𝒌-DAES captures the RIXS data, highlighting the importance of 𝒌-DAES when describing the 𝑸 dependence of charge excitations from 0 to a few eV scale. Furthermore, we also find that the inclusion of 𝒌-DAES is essential when quantitative parameters such as the electronic energy gap are extracted from RIXS data.

36 MATERIALS SCIENCE↗

Low-phase-noise surface-acoustic-wave oscillator using an edge mode of a phononic band gap

Low-phase-noise microwave-frequency integrated oscillators provide compact solutions for various applications in signal processing, communications, and sensing. Surface acoustic waves (SAWs), featuring orders-of-magnitude shorter wavelength than electromagnetic waves at the same frequency, enable integrated microwave-frequency systems with much smaller footprint on chip. SAW devices also allow higher-quality (Q) factors than electronic components at room temperature. Here, we demonstrate a low-phase-noise gigahertz-frequency SAW oscillator on 128°Y-cut lithium niobate, where the SAW resonator occupies a footprint of 0.05 mm 2 . Leveraging phononic crystal band-gap-edge modes to balance between Q factors and insertion losses, our 1-GHz SAW oscillator features a low phase noise of -132.5 dBc/Hz at a 10-kHz offset frequency and an overlapping Hadamard deviation of 6.5 × 10 -10 at an analysis time of 64 ms. The SAW resonator-based oscillator holds high potential in developing low-noise sensors and acousto-optic integrated circuits.

42 ENGINEERING↗

Insulating band gaps both below and above the Néel temperature in d -electron LaTi O 3 , LaV O 3 , SrMn O 3 , and LaMn O 3 perovskites as a symmetry-breaking event

Metal d-electron oxides having an odd number of electrons per cell should exhibit band degeneracy at the Fermi energy, making them, in band theory, formally metallic. In many cases, however, these are “false metals”, as evidenced by the observation that many ABO 3 oxide perovskites with a magnetic 3d B-atom are observed to be insulators both below and above the Néel temperature. These inconsistencies between experimental observation and expectation have historically been resolved by invoking degeneracy-breaking physics, based largely on -pure electron effects, such as strong interelectronic correlation for d-electron compounds (the Mott mechanism). Such explanations generally consider microscopic lattice or magnetic degrees of freedom (m-DOF) as largely passive spectators, not a cause of the formally metallic being an insulator. Yet, it has long been known that ABO 3 perovskites can manifest an arrangement of m-DOFs in the form of octahedral tilting, bond dimerization, Jahn-Teller distortions, and ordering of local magnetic moments. It appears reasonable that such structural and magnetic local degrees of freedom need to be allowed to compete with purely electronic strong correlation. To answer this question, we explored a range of d-electron oxide perovskites exemplified by the archetypes LaTiO 3 , LaVO 3 , SrMnO 3 , and LaMnO 3 with 1, 2, 3, or 4 d -electrons, respectively. Using a mean-field-like electronic structure method (here, density functional theory), we find that a combination of magnetic symmetry breaking with structural distortions can account for insulating band gaps in this series while at the same time correctly predicting for the control case an intrinsic paramagnetic metal in SrVO 3 as symmetry-breaking is insufficiently strong to remove the degeneracy. Finally, this indicates that calculating quantitatively local magnetic and positional symmetry-breaking motifs in unit cells that avoid averaging at the outset over the low symmetry motifs can provide consistent trends in a Mott transition without Mott U.

36 MATERIALS SCIENCE↗

Planar Transformer With Asymmetric Integrated Leakage Inductance Using Horizontal Air Gap

This article presents a novel planar-based transformer winding and core structure with controllable leakage inductance generation for integrated magnetics applications. As a result of limitations in integrated magnetics from the literature, a new approach is proposed utilizing semi-interleaved windings and controllable leakage via a leakage flux core leg featuring a horizontal air gap. Here, the proposed transformer design is analyzed via detailed reluctance modeling to determine closed-form equations for the magnetizing and asymmetrically distributed leakage inductances. Next, a genetic-algorithm-based multiobjective design optimization problem is developed, seeking to minimize the core and winding losses of the proposed transformer subject to a set of parametric and geometric constraints in a dc-ac dual-active-bridge topology for microinverter applications. The optimization was extended to include other integrated magnetic structures from the literature, where it is determined that the proposed transformer is superior from the perspectives of efficiency, footprint area, and parasitic capacitance. Based on the results of the optimization analysis, two designs with theoretical transformer California Energy Commission (CEC) efficiency drops (i.e., CEC efficiency reduction specifically due to the transformer loss mechanisms) of 1.19% and 0.83% were fabricated and evaluated for electrical and thermal performance in the proposed 40 V, 400 W microinverter.

42 ENGINEERING↗

On the Inductance of a Single-Channel Spark-Gap Switch for Pulsed Power Applications

In this paper, we derive an alternative expression for calculating the inductance of a single-channel spark-gap switch. We believe this new inductance expression provides greater clarity compared to other approaches. Interestingly, both the Rosa formula and the coaxial inductance formula, which are commonly used in such calculations, emerge as special cases of our new expression. To validate the proposed formula, we conducted COMSOL simulations that show excellent agreement with our theoretical predictions.

COMSOL↗

Status Quo and Gap Analysis of Heliostat Field Deployment Processes for Concentrating Solar Tower Plants

In this study, deployment of the solar field of a concentrating solar power plant is one of many factors that are integral to the success of a project. Knowledge transfer from outside the industry is limited due to the unique nature of heliostats, which redirect sunlight to a receiver with high precision while maintaining a high level of reflectivity. Moreover, learning from project to project can be limited due to the site-specific nature of projects, as the market includes several developers, each with their own unique design. In this paper, we discuss the state of the art in heliostat field deployment. We cover all the key aspects of deployment from project assessment to a fully functioning system, which include site selection, layout development, supply chain, assembly, site preparation and construction, calibration, and operations and maintenance. We then perform a gap analysis on field deployment and recommend priorities for future research.

14 SOLAR ENERGY↗

Knowledge gaps for neuromorphic ionic computing

BACKGROUND Neuromorphic computing, inspired by the human brain’s ability to process information efficiently, represents a transformative approach to computation. In this Review, we explore the emerging field of neuromorphic ionic computing, which leverages ionic conduction and coupling to mimic neural processes, and identify critical knowledge gaps that must be addressed to realize its full potential. A central theme of the discussion is energy efficiency, a challenge that is both a limitation and an opportunity for this technology. Although complementary metal-oxide semiconductor (CMOS)–based neuromorphic technologies have made strides in scaling to billions of neurons and are increasingly applied in artificial intelligence and numerical computing, they remain orders of magnitude behind the human brain in terms of connectivity and energy efficiency. Neuromorphic ionic computing promises to overcome these limitations by leveraging the distinct architectural and operational principles of the brain. Our brains achieve this energy efficiency by combining several key features: using the same network elements to store and process information; using an incredibly complex and massively interconnected three-dimensional (3D) network of locally active elements that enables sparsity, robustness in the presence of noise, adaptation, and life-long learning; computing at comparatively low voltage and frequency; and last, taking advantage of a plethora of ions and small molecules as information carriers. Here, we propose that ionic computing systems can take advantage of similar features to achieve substantial gains in energy efficiency. ADVANCES Since the first reports of neuromorphic ionic behavior in nanofluidic channels, we have witnessed an explosion of reports that used ionic devices to produce synaptomimetic behaviors. However, achieving the goals of ionic computing requires not only implementation of much more sophisticated device functionality but also overcoming fundamental barriers in materials science, device architecture, and system integration. Current ionic devices, even those incorporating state-of-the-art materials, still suffer from limited functionality and stability, which restrict their performance and increase energy demands. Developing new materials with enhanced ionic properties is essential to overcome these limitations. Similarly, the design of neuromorphic devices must evolve to leverage the particular advantages of ionic processes. Existing architectures often follow a single-information-carrier logic of conventional electronics or are constructed of mesoscale fluidics, failing to capitalize on the energy-efficient mechanisms inherent to ionic systems or implement the multiple-information-carrier paradigm. Current neuromorphic chips focus on large-scale networks of analog memory elements based on mechanisms such as charge trap (flash), filamentary, phase change, or spin, which are built on top of a network of artificial CMOS neurons. Although such prototype networks have achieved impressive performance, it is difficult to envision how they can implement the key features such as massive connectivity, sophisticated plasticity, adaptability, sparsity, and “multichromatic” computing. Although small-scale devices have demonstrated promising results, integrating them, maintaining energy efficiency, and implementing temperature control as systems grow in complexity and size to computationally relevant scale remain major hurdles. Furthermore, interfacing neuromorphic ionic devices with existing computing technologies presents technical and conceptual challenges that will require innovative approaches that combine insights from neuroscience, materials science, and engineering. OUTLOOK Despite these challenges, the potential impact of neuromorphic ionic computing is profound with potential applications ranging from artificial intelligence to robotics and beyond. We also argue that neuromorphic ionic computing systems should not, at least in the beginning, compete with CMOS technologies but rather should focus on applications that require extreme energy efficiency with chemical and/or biological compatibility, such as biomedical applications (for example, brain-computer interfaces), environmental monitoring, and agricultural and food applications. Ultimately, this Review highlights the crucial role of interdisciplinary collaboration in advancing the field. Neuromorphic ionic computing is not merely a technological innovation; it represents a substantial step toward sustainable computation, aligning with the growing demand for energy-conscious solutions in a world that is increasingly reliant on data and computation.

Neuromorphic↗