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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1995

High-performance passive microwave survey on Josephson Junctions

The quasi-optical generations of images of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However, at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted so that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET (field effect transistors) or SQUIDS for signal amplifications after JJ is of particular interest in this case.

Denisov, A. G.↗
NASA NTRS1995

High Density Memory Based on Quantum Device Technology

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

vanderWagt, Paul↗
NASA NTRS1996

AlGaN Channel Transistors for Power Management and Distribution

Contained within is the Final report of a Phase 1 SBIR program to develop AlGaN channel junction field effect transistors (JFET). The report summarizes our work to design, deposit, and fabricate JFETS using molecular beam epitaxy growth AlGaN. Nitride growth is described using a RF atomic nitrogen plasma source. Processing steps needed to fabricate the device such as ohmic source-drain contacts, reactive ion etching, gate formation, and air bride fabrication are documented. SEM photographs of fabricated power FETS are shown. Recommendations are made to continue the effort in a Phase 2 Program.

ENERGY MANAGEMENT↗
NASA NTRS1998

The Design and Development of the SMEX-Lite Power System

This paper describes the design and development of a 250W orbit average electrical power system electronic Power Node and software for use in Low Earth Orbit missions. The mass of the Power Node is 3.6 Kg (8 lb.). The dimensions of the Power Node are 30cm x 26cm x 7.9cm (11 in. x 10.25 in x 3.1 in.) The design was realized using software, Field Programmable Gate Array (FPGA) digital logic and surface mount technology. The design is generic enough to reduce the non-recurring engineering for different mission configurations. The Power Node charges one to five, low cost, 22-cell 4 AH D-cell battery packs independently. The battery charging algorithms are executed in the power software to reduce the mass and size of the power electronic. The Power Node implements a peak-power tracking algorithm using an innovative hardware/software approach. The power software task is hosted on the spacecraft processor. The power software task generates a MIL-STD-1553 command packet to update the Power Node control settings. The settings for the battery voltage and current limits, as well as minimum solar array voltage used to implement peak power tracking are contained in this packet. Several advanced topologies are used in the Power Node. These include synchronous rectification in the bus regulators, average current control in the battery chargers and quasi-resonant converters for the Field Effect Transistor (FET) transistor drive electronics. Lastly, the main bus regulator uses a feed-forward topology with the PWM implemented in an FPGA.

Rakow, Glenn P.↗
NASA NTRS1999

Detector Assembly and the Ultralow-Temperature Refrigerator for XRS

The X-ray spectrometer (XRS) on the Japanese Astro-E Spacecraft is the first ultra low temperature space borne instrument. The system utilizes a 900g Ferric Ammonium Alum (FAA) Adiabatic Demagnetization Refrigerator (ADR) with a helium-3 gas gap heat switch to cool the detector assembly to 0.060K. The system operates in a "single shot" configuration allowing the system to remain at its operating temperature for about 40 hours in the lab. The on-orbit performance is expected to be about 35 hours with a 97% duty cycle. The detector assembly for XRS consists of a 32 channel microcalorimeter array bias electronics, thermometry, and an anti-coincidence detector that are attached to the cold stage of the ADR. To thermally Isolate the detector system from the superfluid helium reservoir, the detector system is suspended by Kevlar cords and electrical connection in made by L30, 17-micron diameter, tensioned NbTi leads. The detectors are read out in a source-follower arrangement using FET amplifiers operating at 130K mounted in multiply-thermally-isolated assemblies that also use Kevlar and stainless steel wiring. The design and thermal performance of this system will be discussed and compared to the theoretical limits.

Porter, F. S.↗
NASA NTRS2001

Development of Low-Noise High Value Chromium Silicide Resistors for Cryogenic Detector Applications

Extremely high sensitivity detectors, such as silicon bolometers are required in many NASA missions for detection of photons from the x-ray to the far infrared regions. Typically, these detectors are cooled to well below the liquid helium (LHe) temperature (4.2 K) to achieve the maximum detection performance. As photoconductors, they are generally operated with a load resistor and a pre-set bias voltage, which is then coupled to the input gate of a source-follower Field Effect Transistor (FET) circuit. It is imperative that the detector system signal to noise performance be limited by the noise of the detector and not by the noise of the external components. The load resistor value is selected to optimize the detector performance. These two criteria tend to be contradictory in that these detectors require load resistors in the hundreds of megaohms, which leads to a higher Johnson noise. Additionally, the physical size of the resistor must be small for device integration as required by such missions as the NASA High Resolution Airborne Wide-Band Camera (HAWC) instrument and the Submillimeter High Angular Resolution Camera (SHARC) for the Caltech Submillimeter Observatory (CSO). We have designed, fabricated and characterized thin film resistors using a CrSi/TiW/Al metal system on optical quality quartz substrates. The resistor values range from 100 megaohms to over 650 megaohms and are Johnson noise limited at LHe temperatures. The resistor film is sputtered with a sheet resistance ranging from 300 ohms to 1600 ohms and the processing sequence developed for these devices allows for chemically fine tuning the sheet resistance in-situ. The wafer fabrication process was of sufficiently high yield (>80%) providing clusters of good resistors for integrated multiple detector channels, a very important feature in the assembly of these two instruments.

Jhabvala, Murzy↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
NASA NTRS2002

The four-gate transistor

The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

neuro-prosthetic devices cortical signals↗
NASA NTRS1995

Hydrogen Effects on GaAs, Status and Progress

It has been observed that GaAs devices in hermetically sealed packages when exposed to temperatures as low as 125oC can exhibit unacceptable degradation in both RF and DC characteristics. The source of the problem was found to be hydrogen that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics. Most of the data indicates the onslaught of the problem to occur after 500 hours at 125oC. This onslaught has been observed to be dependent on the thickness and processing conditions of the passivation layer, the sealing environment, and the amount of Pt or Pd in the gate structure of the device.

Hydrogen GaAs↗
NASA NTRS1996

Hydrogen Effects on GaAs Device Reliability

GaAs and InP devices in hermetically sealed packages have been observed to exhibit unacceptable degradation in both RF and DC characteristics. This degradation has been observed to occur at temperatures as low as 125oC. The source of the degradation has been linked to hydrogen gas that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt or Pd metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics.

Gallium Arsenide↗
NASA NTRS1994

Clementine RRELAX SRAM Particle Spectrometer

The Clementine RRELAX radiation monitor chip consists of a p-FET total dose monitor and a 4-kbit SRAM particle spectrometer. Eight of these chips were included in the RRELAX and used to detect the passage of the Clementine (S/C) and the innerstage adapter (ISA) through the earth's radiation belts and the 21-Feb 1994 solar flare. This is the first space flight for this 1.2 micron rad-soft custom CMOS radiation monitor. This paper emphasizes results from the SRAM particle detector which showed that it a) has a detection range of five orders of magnitude relative to the 21-Feb solar flare, b) is not affected by electrons, and c) detected microflares occurring with a 26.5 day period.

Clementine↗
NASA NTRS1997

Varying potential silicon carbide gas sensor

A hydrocarbon gas detection device operates by dissociating or electro-chemically oxidizing hydrocarbons adsorbed to a silicon carbide detection layer. Dissociation or oxidation are driven by a varying potential applied to the detection layer. Different hydrocarbon species undergo reaction at different applied potentials so that the device is able to discriminate among various hydrocarbon species. The device can operate at temperatures between 100.degree. C. and at least 650.degree. C., allowing hydrocarbon detection in hot exhaust gases. The dissociation reaction is detected either as a change in a capacitor or, preferably, as a change of current flow through an FET which incorporates the silicon carbide detection layers. The silicon carbide detection layer can be augmented with a pad of catalytic material which provides a signal without an applied potential. Comparisons between the catalytically produced signal and the varying potential produced signal may further help identify the hydrocarbon present.

Shields, Virgil B.↗
NASA NTRS2008

A 1 GHz Oscillator-Type Active Antenna

Wireless sensors are desired for monitoring aircraft engines, automotive engines, industrial machinery, and many other applications. The most important requirement of sensors is that they do not interfere with the environment that they are monitoring. Therefore, wireless sensors must be small, which demands a high level of integration. Sensors that modulate an oscillator active antenna have advantages of small size, high level of integration, and lower packaging cost. Several types of oscillator active antennas have been reported. Ip et al. demonstrated a CPW line fed patch antenna with a feedback loop [1]. No degradation in performance was noticed without a ground plane. A GaAs FET was used in an amplifier/oscillator-based active antenna [2]. An oscillator based on a Cree SiC transistor was designed and characterized in [3]. This paper reports the integration of the SiC Clapp oscillator to a slotline loop antenna.

Jordan, Jennifer L.↗
NASA NTRS2008

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Krasowski, Michael J.↗
NASA NTRS2009

SiC Optically Modulated Field-Effect Transistor

An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification of the photon-detection signal. A family of operating curves characterizing the OFET can be generated in a series of measurements performed at different intensities of incident ultraviolet light.

Tabib-Azar, Massood↗
NASA NTRS2008

NASA Tech Briefs, April 2008

Topics covered include: Gas Sensors Based on Coated and Doped Carbon Nanotubes; Tactile Robotic Topographical Mapping Without Force or Contact Sensors; Thin-Film Magnetic-Field-Response Fluid-Level Sensor for Non-Viscous Fluids; Progress in Development of Improved Ion-Channel Biosensors; Simulating Operation of a Complex Sensor Network; Using Transponders on the Moon to Increase Accuracy of GPS; Controller for Driving a Piezoelectric Actuator at Resonance; Coaxial Electric Heaters; Dual-Input AND Gate From Single-Channel Thin-Film FET; High-Density, High-Bandwidth, Multilevel Holographic Memory; Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters; Hydroxide-Assisted Bonding of Ultra-Low-Expansion Glass; Photochemically Synthesized Polyimides; Optimized Carbonate and Ester-Based Li-Ion Electrolytes; Compact 6-DOF Stage for Optical Adjustments; Ultrasonic/Sonic Impacting Penetrators; Miniature, Lightweight, One-Time-Opening Valve; Supplier Management System; Improved CLARAty Functional-Layer/Decision-Layer Interface; JAVA Stereo Display Toolkit; Remote-Sensing Time Series Analysis, a Vegetation Monitoring Tool; PyPele Rewritten To Use MPI; Data Assimilation Cycling for Weather Analysis; Hydrocyclone/Filter for Concentrating Biomarkers from Soil; Activating STAT3 Alpha for Promoting Healing of Neurons; and Probing a Spray Using Frequency-Analyzed Light Scattering.

Source record↗
NASA NTRS2008

NASA Tech Briefs, January 2008

Topics covered include: Induction Charge Detector with Multiple Sensing Stages; Generic Helicopter-Based Testbed for Surface Terrain Imaging Sensors; Robot Electronics Architecture; Optimized Geometry for Superconducting Sensing Coils; Sensing a Changing Chemical Mixture Using an Electronic Nose; Inertial Orientation Trackers with Drift Compensation; Microstrip Yagi Antenna with Dual Aperture-Coupled Feed; Patterned Ferroelectric Films for Tunable Microwave Devices; Micron-Accurate Laser Fresnel-Diffraction Ranging System; Efficient G(sup 4)FET-Based Logic Circuits; Web-Enabled Optoelectronic Particle-Fallout Monitor; SiO2/TiO2 Composite for Removing Hg from Combustion Exhaust; Lightweight Tanks for Storing Liquefied Natural Gas; Hybrid Wound Filaments for Greater Resistance to Impacts; Making High-Tensile-Strength Amalgam Components; Bonding by Hydroxide-Catalyzed Hydration and Dehydration; Balanced Flow Meters without Moving Parts; Deflection-Compensating Beam for Use inside a Cylinder; Four-Point-Latching Microactuator; Curved Piezoelectric Actuators for Stretching Optical Fibers; Tunable Optical Assembly with Vibration Dampening; Passive Porous Treatment for Reducing Flap Side-Edge Noise; Cylindrical Piezoelectric Fiber Composite Actuators; Patterning of Indium Tin Oxide Films; Gimballed Shoulders for Friction Stir Welding; Improved Thermal Modulator for Gas Chromatography; Nuclear-Spin Gyroscope Based on an Atomic Co-Magnetometer; Utilizing Ion-Mobility Data to Estimate Molecular Masses; Optical Displacement Sensor for Sub-Hertz Applications; Polarization/Spatial Combining of Laser-Diode Pump Beams; Spatial Combining of Laser-Diode Beams for Pumping an NPRO; Algorithm Optimally Orders Forward-Chaining Inference Rules; Project Integration Architecture; High Power Amplifier and Power Supply; Estimating Mixing Heights Using Microwave Temperature Profiler; and Multiple-Cone Sunshade for a Spaceborne Telescope.

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