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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Fabrication of high efficiency and radiation resistant GaAs solar cells

Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.

Kamath, S.↗
NASA NTRS1978

Epitaxial silicon growth for solar cells

Growth and fabrication procedures for the baseline solar cells are described along with measured cell parameters, and the results. Reproducibility of these results was established and the direction to be taken for higher efficiency is identified.

Daiello, R. V.↗
NASA NTRS1982

Interaction between cast silicon properties and solar cell performance

Three types of cast silicon, Silso, HEM (Heat-Exchanger Method) and UCP (Ubiquitous Crystallization Process) were studied for their use as solar cells. Optical microscopy after etching revealed a high density of uniform dislocations (approaching 1,000,000/sq cm), lines of dislocations indicating stress during crystal growth, and precipitates, some of which generate dislocations. Solar cells were fabricated by three processes. Results of solar cell processing revealed that these materials produce cells of lower efficiency than Czochralski control cells, and that the efficiencies of the three materials were quite close. Diffusion length and spectral response data are shown. Certain structural features are correlated with solar cell efficiency, diffusion length, and spectral response. Electron-beam induced current (EBIC) and light spot scanning are used to back up other measurements.

Hyland, S.↗
NASA NTRS1980

Fabrication of AlGaAs/GaAs cascade solar cell by LPE

Stacking two or more photovoltaic junctions in electrical and optical series results in higher conversion efficiency since each junction can be tailored to respond more efficiently to a smaller range of photon energies. An efficiency of about 30 percent was predicted for a two junction cascade cell having the optimum bandgap values. A number of III-V materials systems were considered for use in fabricating cascade solar cells. The Al-Ga-As system is attractive from a developmental standpoint since it employs a proven materials system that is closely lattice matched throughout its compositional range. This system employs a GaAs low bandgap cell and 1.9 eV AlGaAs high bandgap cell connected by an AlGaAs tunnel junction. Although this cell does not possess the optimum bandgap values, an efficiency of 25 percent was predicted at 300 K under AMO, 1 sun illumination.

Bedair, S. M.↗
NASA NTRS1979

GaAs solar cell development

The four (AlGa)As-GaAs solar cells were fabricated and will be delivered for radiation damage testing using 1 MeV electrons. These cells were LPE grown at 700 C for 4 minutes. The junction depth was measured to be 0.3 micron using a secondary electron microscope. The radiation model for the shallow junction cells was verified. Some mesa diodes were also fabricated and will be irradiated along with the cells for parallel evaluations of their electrical characteristics.

Source record↗
NASA NTRS1983

Thin N-I-P radiation resistant solar cells

Several sets of N-I-P sola cells were fabricated from high resistivity silicon to test the effectiveness of various methods for hardening these devices against radiation. Different substrate materials were used to provide information on the effects of dopant concentration, silicon type, and the presence of oxygen. In some cells, P-type float-zone refined silicon of 800, 8000 and 15,000 omega-cm resistivity was used to provide a basis for studying resistivity and purity effects. In other cells, N-type silicon (approximately 800 omega-cm) was used to allow a comparison of dopant type. Oxygen-rich, crucible-grown, silicon (approximately 100 omega-cm, p-type) will provide information on purity effects and defect gettering. Lithium was introduced into different types of silicon to determine if mobile ions can reduce radiation induced defects in high resistivity material. Thin cells (2 mil) were fabricated to study the effects of cell thickness and carrier injection on radiation damage. The electrical characteristics of the different sets of cells were measured, analyzed, and compared prior to shipment of the cells to NASA/Lewis for irradiation.

Meulenberg, A.↗
DOE OSTI2022

Design, Processing, and Integration of Pouch-Format Cell for High-Energy Lithium-Sulfur Batteries

This project objective was to develop and demonstrate a lithium-sulfur (Li-S) battery in a pouch-format cell capable of achieving an energy density ≥ 500 Wh/kg while achieving a 1,000 cycle life. The research focused on cell optimization and fabrication addressing different technical barriers and challenges including: 1) thin lithium anode optimization; 2) current collector and tab attachment design; 3) cathode porosity control; 4) electrolyte to sulfur ratio control; 5) cell design; and 6) cell fabrication. The project developed and demonstrated various technologies to address these technical barriers and challenges. The project demonstrated a thin lithium anode by vapor deposition, a collector design and validation of laser welding of tab attachment method, a cathode porosity control strategy by binder optimization, a calendaring process control and surface/interface treatment, and an electrolyte to sulfur ratio control with influence on cell energy density. The sulfur cathode was optimized by tuning the formulation, optimizing the calendaring process, and introducing a novel electrode fabrication process. To address the electrolyte performance issue, the electrolyte optimization was achieved with additive and formulation tuning and the introduction of a dual-phase electrolyte system. In addition to the demonstration of the optimized electrode with a novel fast-curing coating process and dual-phase electrolyte, a coating separator was further developed to address the polysulfide shuttling issue. The resulting new cell design with these optimized cell components was demonstrated in the 1 Ah pouch cell with medium sulfur loading and moderate porosity (~ 4.5 mAh cm-2, 65% porosity) and showed an energy density of > 400 Wh/kg (with E/S ratio of 2.8). The Li-SPAN cell configuration was also evaluated in combination with a new dual-phase electrolyte system. Initial coin cell performance demonstrated cycle stability of >300 cycles with an estimated energy density of 300 Wh/kg at the pouch format level. The corresponding 1 Ah pouch format SPAN cells with the new polymer electrolyte were developed which has shown a stable capacity at 800-900 mAh for ~40 cycles so far.

25 ENERGY STORAGE↗
DOE OSTI2022

Atmospheric plasma spraying to fabricate metal‐supported solid oxide fuel cells with open‐channel porous metal support

Abstract Metal‐supported solid oxide fuel cells (MS‐SOFCs) have been fabricated by applying phase‐inversion tape‐casting and atmospheric plasma spraying (APS). The effect of the binder amount of the phase‐inversion slurries on the microstructure development of the 430L stainless steel metal support was investigated. The pore structures, the viscosity of the slurry, porosity and permeability of the as‐prepared metal supports are significantly influenced by the amount of the binder. NiO–scandia‐stabilized zirconia (ScSZ) anode, ScSZ electrolyte and La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3−δ (LSCF) cathode layers were consecutively deposited on the metal support with an ideal microstructure by APS process. The effect of plasma power of the APS on the microstructure of the electrolyte and cathode was investigated. A dense electrolyte layer and a porous cathode layer were successfully obtained at 40 and 6 kW of the APS plasma power, respectively. MS‐SOFCs, with a cell configuration of 430L/Ni‐ScSZ/ScSZ/LSCF, achieved a maximum cell power density of 1079 mW cm −2 at 700°C using humidified H 2 as fuel and ambient air as oxidant. The corresponding ohmic resistance and total resistance of MS‐SOFCs was 0.14 and 0.32 Ω cm 2 , respectively. This work demonstrates the feasibility of fabricating high‐performance MS‐SOFCs with economical and scalable techniques.

36 MATERIALS SCIENCE↗
NASA NTRS1976

Electrical conductivity cell and method for fabricating the same

A flask having a threaded neck and a cap adapted for threaded engagement on the neck are used. A laminated disc between the cap and the neck forms a gas tight seal and the cap has a central opening that exposes a medial region of the disc. Piercing the disc through the opening are two electrodes, the inner ends of which contact the sample within the flask and the outer ends of which can be connected to test equipment. Cylindric glass tubes are fitted over the external portion of the electrodes to provide physical support and silicone rubber or a similar material serves to retain the glass cylinders in place and form a gas tight seal between the cylinders and the electrodes. Shrinkable tubing is shrunk over the glass tubes to afford further mechanical support and sealing. A final relatively large diameter shrinkable tube is shrunk over both electrodes and their associated glass cylinders. The support and sealing means for the electrodes is confined to a limited portion of the medial region of the disc so that the remainder of such region can be punctured by a hollow needle to introduce a test sample within the flask.

Gilbreath, W. P.↗
NASA NTRS1976

Fabrication of polycrystalline solar cells on low-cost substrates

A new method of producing p-n junction semiconductors for solar cells was described; the principal objective of this investigation is to reduce production costs significantly by depositing polycrystalline silicon on a relatively cheap substrate such as metallurgical-grade silicon, graphite, or steel. The silicon layer contains appropriate dopants, and the substrates are coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures of these compounds.

Chu, T. L.↗
NASA NTRS1980

Development and fabrication of a solar cell junction processing system

Experiments were completed which indicate that single-pulse, liquid-phase epitaxial regrowth is the optimum technique for pulsed electron beam annealing of ion implantation damage in silicon wafers. An electron beam which covers the entire area of the wafer was chosen for the solar cell processor. Beam control experiments to improve beam propagation and to test the concept of partial space charge and current neutralization were initiated. The electrical parameters of the pulsed electron beam subsystem were chosen on the basis of computer calculations and past experience in pulsed electron accelerator design and operation. The pulser, designated SPI-PULSE 7000, is designed to anneal 10 cm diameter silicon wafers at a rate of 30 per minute. The preliminary design of the major elements of the SPI-PULSE 7000 was completed, and the detailed design of many of the components begun. These elements include a capacitive energy store and charging system, an electron accelerator, a beam control system, a wafer handling system and pressure and vacuum assemblies.

Halvason, W.↗
NASA NTRS1982

Development and fabrication of a solar cell junction processing system

Development of a pulsed electron beam subsystem, wafer transport system, and ion implanter are discussed. A junction processing system integration and cost analysis are reviewed. Maintenance of the electron beam processor and the experimental test unit of the non-mass analyzed ion implanter is reviewed.

Banker, S.↗
NASA NTRS1982

Method of Fabricating Schottky Barrier solar cell

On a thin substrate of low cost material with at least the top surface of the substrate being electrically conductive is deposited a thin layer of heavily doped n-type polycrystalline germanium, with crystalline sizes in the submicron range. A passivation layer may be deposited on the substrate to prevent migration of impurities into the polycrystalline germanium. The polycrystalline germanium is recrystallized to increase the crystal sizes in the germanium layer to not less than 5 micros to serve as a base layer on which a thin layer of gallium arsenide is vapor epitaxially grown to a selected thickness. A thermally-grown oxide layer of a thickness of several tens of angstroms is formed on the gallium arsenide layer. A metal layer, of not more about 100 angstroms thick, is deposited on the oxide layer, and a grid electrode is deposited to be in electrical contact with the top surface of the metal layer. An antireflection coating may be deposited on the exposed top surface of the metal layer.

Stirn, R. J.↗
NASA NTRS1984

Development and fabrication of a solar cell junction processing system

A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.

Source record↗
NASA NTRS1988

Capacity decline of ambient temperature secondary lithium battery

The use of ambient temperature secondary lithium cells is limited primarily because of the poor cycle life performance. Much of the cell capacity is irreversibly lost upon cycling. Studies have been undertaken to understand the problem of capacity decline. Experimental Li-TiS2 cells were fabricated and tested for their cycle life performance. Cells were disassembled at different stages of cycle life, and cell active components were analyzed by various analytical techniques. The results of this study indicate that all the cell's active components/materials are undergoing degradation. Details of the experiments carried out and the results obtained are described.

Shen, D. H.↗