GaAs solar cell development

Abstract

The four (AlGa)As-GaAs solar cells were fabricated and will be delivered for radiation damage testing using 1 MeV electrons. These cells were LPE grown at 700 C for 4 minutes. The junction depth was measured to be 0.3 micron using a secondary electron microscope. The radiation model for the shallow junction cells was verified. Some mesa diodes were also fabricated and will be irradiated along with the cells for parallel evaluations of their electrical characteristics.