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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 379 records · Page 21

The potential of np GaAs solar cells for high efficiency concentrator applications

This communication considers the design of the front grid contact of np GaAs solar cells for high efficiency concentrator applications. This design involves shadowing, contact resistance, and active layer sheet resistance losses, and at high concentrations, the power loss due to voltage drop on the resistance of the grid fingers should be considered. Analysis of the performance can be calculated as a function of junction depth and surface recombination velocity. The junction depth can be optimized by considering its effect on the collection efficiency of the dark current-voltage characteristics or the open circuit voltage, and on the series resistance loss or the fill factor for material parameters. The choice of the material parameters, calculation of the short circuit current, the selection of the n layer thickness, and the cell maximum power and efficiency are discussed. It is concluded that optimized multi-grid structures should allow the use of 10 by 10 sq cm cells with good efficiencies at high concentration ratios, and efficiencies of 22 to 25% should be obtainable from large area cells at concentrations of 40 AM1.

Flat, A.↗

Testing EKG electrodes on-line

Simple test instrument allows electrocardiograph operator to check individual electrodes while they are attached to subject. Simply by rotating switch and observing meter, operator verifies that each electrode is not short-circuited or open-circuited and does not present excessive contact resistance at its interface with skin. Instrument also makes it convenient to check electrode cables that are subject to frequent bending and wear, such as cables used on patients who are exercising.

Crosier, W. G.↗

Cell module and fuel conditioner

Stack tests indicate that the discrepancies between calculated and measured temperature profiles are due to reactant cross-over and a lower than expected thermal conductivity of cells. Preliminary results indicate that acceptable contact resistance between cooling plane halves can be achieved without the use of paper. The preliminary design of the enclosure, definition of required labor and equipment for manufacturing repeating components, and the assembly procedures for the benchwork design were developed. Fabrication of components for a second 5-cell stack of the MK-2 design and a second 23-cell stack of the MK-1 design was started. The definition of water and fuel for the reforming subsystem was developed along with a preliminary definition of the control system for the subsystem. The construction and shakedown of the differential catalytic reactor was completed and testing of the first catalyst initiated.

Hoover, D. Q., Jr.↗

Heat exchanger and method of making

A heat exchange of increased effectiveness is disclosed. A porous metal matrix is disposed in a metal chamber or between walls through which a heat-transfer fluid is directed. The porous metal matrix has internal bonds and is bonded to the chamber in order to remove all thermal contact resistance within the composite structure. Utilization of the invention in a rocket chamber is disclosed as a specific use. Also disclosed is a method of constructing the heat exchanger.

Fortini, A.↗

Optimization of multi-layer front-contact grid patterns for solar cells

In a front-contact grid pattern for a solar cell there is a trade-off necessary between shadowing loss and excessive power loss due to voltage drop in the metalization itself. If the metalization is too little there may be excessive contact resistance to the underlying semiconductor and insufficient coverage to control losses in the thin front-surface layer of the solar cell. Optimization of grid pattern area and geometry is considered analytically to minimize total losses. Worthwhile performance advantages are shown to be possible, particularly in concentrator systems, if multi-layer grid patterns are used. The current carrying fingers should be approximately square in metal cross section and the main current feedout bars should not only be wider but also thicker than the primary collecting fingers. This is termed multi-level metalization. Effective use of multi-level grid metalization allows much greater concentration-to-loss ratio for a cell of large area and permits good performance from cells of high front-layer sheet resistance.

Flat, A.↗

Heat transfer, thermal control, and heat pipes

This volume provides information on recent progress in spacecraft thermal control and the supporting disciplines of conduction, thermal radiation, and heat pipe theory and application. Four problem areas are considered: conduction heat transfer, radiation heat transfer, thermal control, and heat pipes. The topics covered include finite-element methodology for transient conduction/forced-convection thermal analysis; effects of surface finish on thermal contact resistance between different materials; mathematical models for wide-band nongray gas radiation in spherical and cylindrical geometries; thermal design, analysis and testing of the Shuttle remote manipulator arm; porous heat pipe; and transient behavior of liquid trap heat-pipe thermal diodes. Also discussed is the thermal design concept for a high-resolution UV spectrometer.

Olstad, W. B.↗

Heat exchanger and method of making

A heat exchanger of increased effectiveness is disclosed. A porous metal matrix is disposed in a metal chamber or between walls through which a heat transfer fluid is directed. The porous metal matrix has internal bonds and is bonded to the chamber in order to remove all thermal contact resistance within the composite structure. Utilization of the invention in a rocket chamber is disclosed as a specific use. Also disclosed is a method of constructing the heat exchanger.

Fortini, A.↗

Ohmic contacts to GaAs for high-temperature device applications

Ohmic contacts to n-type GaAs were developed for high temperature device applications up to 300 C. Refractory metallizations were used with epitaxial Ge layers to form the contacts: TiW/Ge/GaAs, Ta/Ge/GaAs, Mo/Ge/GaAs, and Ni/Ge/GaAs. Contacts with high dose Si or Se ion implantation of the Ge/GaAs interface were also investigated. The contacts were fabricated on epitaxial GaAs layer grown on N+ or semi-insulating GaAs substrates. Ohmic contact was formed by both thermal annealing (at temperatures up to 700 C) and laser annealing (pulsed Ruby). Examination of the Ge/GaAs interface revealed Ge migration into GaAs to form an N+ doping layer. The specific contact resistances of specimens annealed by both methods are given.

Anderson, W. T., Jr.↗

Thermal coupling of a heat flux sensor

The conditions of thermal coupling were investigated in relationship to the development of sensors for local thermal flux measurements of component surfaces. The dependence of the transfer function on heat conductivity coefficient of the measured object and the influence of the contact resistance at the sensor boundaries are discussed in terms of known results and investigations.

Kaiser, E.↗

Post heat treatment effects on double layer metal structures for VLSI applications

The realization of high yield double layer metal systems using wet chemistry processes and the ability to extend yields beyond that attainable with wet chemistry by means of post sintering processes at temperatures below 500 C for potential applications in very large scale integration structures were studied. Yields in excess of 98% and average total contact resistance of less than 150 ohms and 200 ohms were realized for a series of 560 vias of 0.5 X 0.5 mils and 0.2 X 0.2 mils in size, respectively.

Wade, T. E.↗

Electrical characteristics of amorphous iron-tungsten contacts on silicon

The electrical characteristics of amorphous Fe-W contacts have been determined on both p-type and n-type silicon. The amorphous films were obtained by cosputtering from a composite target. Contact resistivities of 1 x 10 to the -7th and 2.8 x 10 to the -6th were measured on n(+) and p(+) silicon, respectively. These values remain constant after thermal treatment up to at least 500 C. A barrier height of 0.61 V was measured on n-type silicon.

Finetti, M.↗

MOD silver metallization for photovoltaics

Photovoltaic cells require back side metallization and a collector grid system on the front surface. Both front and back surface metallizations should have good adhesion, low contact resistance, low sheet resistance, long term stability, and their deposition methods should not degrade the n-p junction. Advantages and disadvantages of different deposition methods are discussed.

Vest, G. M.↗

Metalizing Solar Cells by Selective Electroplating

Contact patterns traced by laser scanning. Conductor paths deposited on silicon solar-cell wafers by laser irradiation followed by electroplating. Laser-assisted metalization technique offers better resolution and lower contact resistance than does conventional metalization by screen printing. At the same time, less expensive than metalization with masks and photolithography.

Dutta, S.↗

p/n InP homojunction solar cells with a modified contacting scheme by liquid phase epitaxy

p/n InP homojunction solar cells with a modified contacting scheme have been fabricated from wafers grown by liquid phase epitaxy. A p(+)-In(0.53)Ga(0.47)As contacting layer is incorporated in the cell structure to reduce contact resistance and to eliminaate surface spiking problems at the front surface. The highest conversion efficiency (total area) obtained under AM0 illumination is 15.0 percent. The corresponding open-circuit voltage, short-circuit current density, and fill factor for the best cell are 0.866 V, 29.3 mA/sq cm, and 81.0 percent, respectively.

Choi, K. Y.↗

Ink jet assisted metallization for low cost flat plate solar cells

Computer-controlled ink-jet-assisted metallization of the front surface of solar cells with metalorganic silver inks offers a maskless alternative method to conventional photolithography and screen printing. This method can provide low cost, fine resolution, reduced process complexity, avoidance of degradation of the p-n junction by firing at lower temperature, and uniform line film on rough surface of solar cells. The metallization process involves belt furnace firing and thermal spiking. With multilayer ink jet printing and firing, solar cells of about 5-6 percent efficiency without antireflection (AR) coating can be produced. With a titanium thin-film underlayer as an adhesion promoter, solar cells of average efficiency 8.08 percent without AR coating can be obtained. This efficiency value is approximately equal to that of thin-film solar cells of the same lot. Problems with regard to lower inorganic content of the inks and contact resistance are noted.

Teng, K. F.↗

Testing Conductive Films For Continuity

Apparatus tests thin conductive films for continuity without touching them. Specimen irradiated with 10-keV electrons; then noncontacting electrostatic probe scans specimen and measures charge on spot directly under it. Avoids damage to film and error from contact resistance resulting from touching film with conventional probe. Developed to determine integrity of conductive coats applied to surfaces of dielectric materials to inhibit accumulation of electrostatic charges.

Leung, Philip L.↗

Inverse problems and optimal experiment design in unsteady heat transfer processes identification

Experimental-computational methods for estimating characteristics of unsteady heat transfer processes are analyzed. The methods are based on the principles of distributed parameter system identification. The theoretical basis of such methods is the numerical solution of nonlinear ill-posed inverse heat transfer problems and optimal experiment design problems. Numerical techniques for solving problems are briefly reviewed. The results of the practical application of identification methods are demonstrated when estimating effective thermophysical characteristics of composite materials and thermal contact resistance in two-layer systems.

Artyukhin, Eugene A.↗