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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Method and apparatus for evaluating superconducting tunnel junction detector noise versus bias voltage

A technique for characterizing the noise behavior of a superconducting tunnel junction (STJ) detector as a function of its applied bias voltage Vb by stepping the STJ's bias voltage across a predetermined range and, at each applied bias, making multiple measurements of the detector's current, calculating their mean and their standard deviation from their mean, and using this standard deviation as a measure of the STJ detector's noise at that applied bias. Because the method is readily executed under computer control, it is particularly useful when large numbers of STJ detectors require biasing, as in STJ detector arrays In a preferred implementation, the STJ is measured under computer control by attaching it to a digital spectrometer comprising a digital x-ray processor (DXP) coupled to a preamplifier that can set the STJ's bias voltage Vb using a digital-to-analog converter (DAC) controlled by the DXP.

Warburton, William K.↗

DOE OSTI2021

Adaptive Extremum Seeking Control Based LCL Filter Resonant Frequency Online Estimation

The LCL filter has been widely used in the grid-tied inverter systems. However, the resonance of the LCL filter can reduce the system stability margin and the control performance. Moreover, the grid impedance variations can lead to the drift of the resonant frequency, which can further worsen the system robustness. Thus, it is important to know the actual resonant frequency of the LCL filter. In this letter, an adaptive extremum seeking control (AESC) based estimation scheme is proposed to estimate the resonant frequency of the LCL filter online. Further by injecting a high-frequency (HF) signal into the inverter output voltage, the AESC scheme can identify the extremum of the LCL filter amplitude response, i.e., resonant peak. The amplitude of injection signal is adaptive based on the inverter HF response, which can address the tradeoff between the dynamic response and inverter output current quality. Most importantly, compare to other method, the proposed scheme has very low computational complexity, which minimizes the burden to the normal inverter controller operation. Stability analysis is given in this letter, and experimental studies are conducted to validate the effectiveness of the proposed scheme.

42 ENGINEERING↗

DOE OSTI2026

Resilience of High-Efficiency CdSeTe:As and CdSeTe:Cu Solar Cells to Proton Irradiation

Power generation in space is currently dominated by expensive III-V multi-junction photovoltaic (PV) devices and cheap crystalline silicon (c-Si) PV devices. Both of these technologies degrade rapidly in proton-radiation-rich space environments, such as the Van Allen belt. The present study of cadmium selenide telluride- (CdSeTe-) based PV devices exposed to 150-to-1500 keV proton irradiation with fluences up to 9 x 1013 cm-2 reveal a more radiation-hard alternative to III-V and c-Si PV technologies. We report on measurement and analysis of current density vs voltage (JV), external quantum efficiency (EQE), external radiative efficiency, and capacitance vs voltage (CV) characteristics. JV characteristics of As-doped CdSeTe devices show 80% remaining power conversion efficiency (PCE) relative to unexposed controls when exposed to 650 keV protons at a fluence of 1012 cm-2. Under these same irradiation conditions, Cu-doped CdSeTe devices demonstrate an even better 95% PCE retention compared with unirradiated control devices. Evidence of radiation-induced absorber p-type doping compensation is observed in the glass-side EQE at 0 V and CV characteristics of most of the irradiated CdSeTe:As devices, but clear compensation is evident only for the most heavily irradiated CdSeTe:Cu devices. Elevated blue-green photocurrent in the film-side 0 V EQE suggests a buried junction in the most heavily irradiated CdSeTe:As devices. Although CdSeTe:Cu devices are the more resilient of the CdSeTe structures, both CdSeTe-based technologies are radiation-hard when compared to c-Si and III-V multi-junction PV.

14 SOLAR ENERGY↗

DOE OSTI2025

Giant Modulation of Magnetoresistance in a Van Der Waals Magnet by In‐Plane Current Injection

Efficient magnetization control is a central issue in magnetism and spintronics. Particularly, there are increasing demands for manipulation of magnetic states in van der Waals (vdW) magnets with unconventional functionalities. However, the electrically induced phase transition between ferromagnetic-to-antiferromagnetic states without external magnetic field is yet to be demonstrated. Here, the current-induced magnetic phase transition in a vdW ferromagnet Fe 5 GeTe 2 is reported. Based on magneto-transport measurements and theoretical analysis, it is demonstrated that transition in the interlayer magnetic coupling occurs through vertical voltage drop between layers induced by current which is attributed to high anisotropy of the resistivity caused by the vdW gaps. Such magnetic phase transition results in giant modulation of the longitudinal magnetoresistance from 5% to 170%. The electrical tunability of the magnetic phase in Fe 5 GeTe 2 with current-in-plane geometry opens a path for electric control of magnetic properties, expanding the ability to use vdW magnets for spintronic applications.

2D magnet↗

DOE OSTI2021

Integration of Next Generation Critical Infrastructure Sensor Technologies

This project is focused on advancing current protective relaying and control through verifying next generation timing systems and sensors with current commercial off the shelf protective relays. This will further research in the field of advanced grid modernization and demonstrate interoperability between nextgeneration protective relays and voltage and current sensors. These commercial off the shelf (COTS) technologies were tested and integrated with next generation sensor technologies, with the results documented below.

47 OTHER INSTRUMENTATION↗

DOE OSTI2025

DER Inverter Control Fault Ride Through Model in Accordance with IEEE 1547-2018 Std

Distributed Energy Resources (DER) with smart inverters are becoming more prevalent as the need for renewable energy and grid stability increases. An important challenge arises when considering that inverterbased generation methods contribute less current during faults, rendering traditional overcurrent protection unsatisfactory. DERs have fault ride-through requirements when operating in high or low voltage, outlined by IEEE Std. 1547-2018. Faults cause the voltage to reach abnormal steady state magnitudes, depending on the fault resistance and fault type. There are several high voltage and low voltage ride-through zones defined by IEEE Std. 1547-2018. Each zone’s ride through duration decreases as the applicable voltage measurement, i.e., the phase RMS voltage, deviates from its nominal value. This presentation demonstrates the implementation of IEEE Std. 1547-2018 high and low voltage ridethrough grid support functions using a preexisting RSCAD model, discussing the challenges presented during this process. The implemented controls monitor the filtered phase voltages to have a more accurate reading of the applicable voltages. The controls sense the duration that the applicable voltage remains in a specific zone. The breaker trips and ceases energization to the grid when the duration is exceeded. The standard allows the operator to adjust the ride-through times and voltage zones from the default settings. These ranges are implemented into the runtime, which acts as the operator’s SCADA. The results show the accuracy of the voltage measurements, which remain within the IEEE Std. 1547-2018 for all cases.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2022

Port Impedance Measurement and Current Injection Response Analysis for PLCs

Programmable Logic Controllers (PLCs) are used to control devices throughout the power system since they have fast control capabilities and can utilize multiple types of communication interfaces. Therefore, studying and mitigating their vulnerabilities to electromagnetic pulse is important for the reliability of PLC operations. Here, in this paper, an effective impedance measurement scheme is proposed and demonstrated for three PLCs to estimate their susceptibility to an electromagnetic pulse. The equivalent non-uniform transmission line model is established to eliminate the impact of the fixture in the de-embedding process. Then different parameters of the impedance measurement setup are explored. Based on the measured impedance, the equivalent circuit is established to calculate the response of the device when subjected to the electromagnetic pulse. The voltage and current responses of different interfaces are compared utilizing the developed pulsed Current Injection (CI) method. Finally, the impedance measurement scheme is verified through testing using three measuring instruments. And the CI simulation experiments reveal the characteristics and susceptibilities of different PLCs interfaces, indicating that some protection measures are required for the reliable operation of the PLC.

42 ENGINEERING↗

DOE OSTI2022

Design Power Control Strategies of Grid-Forming Inverters for Microgrid Application

This paper develops and compares two control schemes in the application control layer of a non-phase-locked loop (non-PLL) grid-forming (GFM) inverter to gain insight and understanding into how the two schemes affect the dynamic responses of GFM inverters and the transition operation of microgrids. The first scheme adopts power tracking based on an outer current loop in grid-connected mode and droop control in islanded mode, and the second uses droop control in both grid-connected and islanded modes. Analytical study is developed to compare the performance of these two strategies from various aspects, including fundamental differences, transition operation, power tracking, and P-Q capability with low point-of-common-coupling (PCC) voltages. Extensive simulation testing is carried out to validate the control performance of these two control strategies, and the simulation testing confirms the findings of the analytic study. Finally, the second strategy is recommended because of its superior control performance and ease of implementation. The analysis and results are useful in developing reliable control schemes for non-PLL GFM inverters because increasing numbers of inverters will work as non-PLL grid-forming sources in future grids because of their improved stability and reliability.

grid-forming↗

DOE OSTI2022

A method for automated modeling of plasma shape control response in tokamaks

Here, a simple method commonly used in modeling of tokamak conductor and plasma response for plasma control has been extended to allow more general modeling of tokamak PF conductor circuits. This extension combines a previously existing method for integrating plasma response and tokamak circuits with a more capable circuit modeling technique derived from the theory that underlies present-day automatic circuit simulation codes. This combined method can incorporate any combination of inductors (e.g., coils), resistors, capacitors, voltage sources, and current sources, while retaining the same model structure and ease of interpretation as the simple method. For many tokamaks, use of this extended method would not be the preferred approach, but for certain devices or for specialized models of a device, it is useful and occasionally essential. For example, the method has enabled fast and automated modeling of the complicated and daily-changing circuit topology used in the DIII-D tokamak. This automated modeling is essential to the support of controller design for the frequently changing requirements for DIII-D plasmas. It is likely to also find application in the workflows for new device designs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2025

High-Throughput In-Line Deposition of Silicon Oxide for Polycrystalline Silicon Passivating Contacts

Polycrystalline silicon passivating contacts rely on an ultrathin (1–2 nm) silicon oxide layer to minimize recombination at the wafer/oxide interface and regulate dopant diffusion. Traditionally formed by thermal or chemical oxidation, this oxide is herein replaced by silicon oxide deposited via aerosol impact-driven assembly (AIDA), enabling high wafer-per-hour throughput and precise thickness control. In this study, we show that AIDA coatings conformally cover planar or textured substrates and achieve a SiO x /poly-Si(n) structure with an implied open-circuit voltage (iV oc = 726 mV) and contact saturation current density (J 0 = 8.8 fA/cm 2 ). Furthermore, annealing AIDA SiO x films at elevated temperatures desorbs hydroxyl groups while the stoichiometry transitions toward SiO 2 , improving passivation quality. Together, these results highlight AIDA’s potential for scalable, high-throughput manufacturing of advanced passivating contacts, offering a cost-effective alternative to conventional low-pressure chemical vapor deposition and plasma-enhanced chemical vapor deposition-based silicon and oxide processes.

TOPcon↗

DOE OSTI2020

Electron beam injection from a hollow cathode plasma into a downstream reactive environment: Characterization of secondary plasma production and Si 3 N 4 and Si etching

A material etching system was developed by combining beam electron injection from a direct current (DC) hollow-cathode (HC) electron source with the downstream reactive environment of a remote CF 4 /O 2 low temperature plasma. The energy of the injected beam electrons is controlled using an acceleration electrode biased positively relative to the HC Argon discharge. For an acceleration voltage greater than the ionization potential of Ar, the extracted primary electrons can produce a secondary plasma in the process chamber. We characterized the properties of the secondary plasma by performing Langmuir probe measurements of the electron energy probability function (EEPF) 2.5 cm below the extraction ring. The data indicate the existence of two major groups of electrons, including electrons with a primary beam electron energy which varies as the acceleration voltage is varied, along with low energy electrons produced by ionization of the Ar gas atoms in the process chamber by the injected beam electrons. When combining the HC Ar beam electron with a remote CF 4 /O 2 electron cyclotron wave resonance (ECWR) plasma, the EEPF of both the low energy plasma electron and beam electron components decreases. Additionally, we studied surface etching of Si3N4 and poly-crystalline Si (poly-Si) thin films as a function of process parameters, including the acceleration voltage (0-70 V), discharge current of the HC discharge (1-2 A), pressure (2- 100 mTorr), source to substrate distance (2.5 to 5 cm), and feed gas composition (with or without CF 4 /O 2 ). The direction of the incident beam electrons was perpendicular to the surface. Si 3 N 4 and poly-crystalline silicon etching are seen and indicate an electronneutral synergy effect. No/little remote plasma spontaneous etching was observed for the conditions used in this study, and the etching is confined to the substrate area irradiated by the injected beam electrons. The electron etched Si 3 N 4 surface etching rate profile distribution is confined within a ~30 mm diameter circle, which is slightly broader than the area for which poly-Si etching is seen, and coincides closely with the spatial profile of beam electrons as determined by the Langmuir probe measurements. The magnitude of poly-Si etching rate is by a factor of two times smaller than the Si 3 N 4 etching rate. In this paper, we discuss possible explanations of the data and the role of surface charging.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Etching of Si 3 N 4 induced by electron beam plasma from hollow cathode plasma in a downstream reactive environment

An etching system based on the interaction of electrons extracted from a direct current (DC) hollow-cathode (HC) Ar plasma and injected towards a Si3N4 covered silicon substrate located in the downstream reactive environment created by an additional remote CF 4 /O 2 plasma source was developed and evaluated. By controlling the properties of the injected beam electrons, this approach allows to deliver energy to a surface functionalized by exposure to reactive species, and initiate surface etching. The energy of the primary beam electrons is controlled by the acceleration voltage relative to the HC discharge. Ar atoms flow from the high-pressure HC discharge into the low pressure downstream reactive environment in the process chamber. For an acceleration voltage greater than the ionization potential of Ar and/or process gas species, the energetic primary beam electrons produce a secondary plasma in the process chamber, and can also cause additional dissociation. We have characterized the properties of the secondary plasma and also surface etching of Si 3 N 4 as a function of process parameters, including acceleration voltage (0-80 V), discharge current of the HC discharge (1-2 A), pressure (3.5-20 mTorr), source to substrate distance (1.5 to 5 cm), and feed gas composition (20% and 80% O2 in CF 4 /O 2 ). The electron energy probability function (EEPF) measured with a Langmuir probe about 2.5 cm below the extraction ring suggests several major groups of electrons for this situation, including high energy primary beam electrons with an energy that varies as the acceleration voltage is changed and low energy electrons produced by beam electron-induced ionization of the Ar gas in the process chamber. When a remote CF 4 /O 2 plasma is additionally coupled to the process chamber, Si 3 N 4 surfaces can be functionalized, and by varying the energy of the beam electrons, Si 3 N 4 etching can be induced by electron-neutral synergy effect with plasma-surface interaction. For conditions without beam electron injection, the remote plasma etching rate (ER) of Si 3 N 4 depends strongly on the O 2 concentration in the CF 4 /O 2 processing gas mixture and can be suppressed for O 2 -rich process conditions by the formation of a SiONF passivation layer on the Si 3 N 4 surface. The combination of the HC electron beam source with the remote plasma source (HCEB-RP) makes it possible to induce Si 3 N 4 etching for O 2 -rich remote plasma conditions where remote plasma by itself produces negligible Si 3 N 4 etching. The electron enhanced etching of Si 3 N 4 depends strongly on O 2 /CF 4 mixing ratio reflecting changing arrival rates of O and F species at the surface. Optical emission spectroscopy was used to estimate the ratio of gas phase F and O densities and found to be controlled by the gas mixing ratio and independent of HC EB operating conditions. At this time the detailed sequence of events operative in the etching mechanism is unclear. While the increase of the electron energy is ultimately responsible for initiating surface etching, at present we cannot rule out a role of ions from the simultaneously produced secondary plasma in plasma surface interaction mechanisms.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

A Generic Two-Vector Model Predictive Control for Hybrid Multilevel Converters

In this article, a generic two-vector model predictive control (TV-MPC) strategy is proposed for the hybrid multilevel converters (HMCs). The proposed method selects two optimal voltage vectors among all the vector candidates using a geometric positioning approach to reduce the computational burden, which is a common issue in the existing MPC methods for HMC. Then duty cycles of the two selected vectors are optimized to minimize the current tracking error, such that the current tracking performance can be enhanced compared with the conventional MPC. In addition, the voltages of the floating dc capacitors can be balanced by evaluating all switching sequences that belong to the optimal voltage vectors with optimal duty cycles. Here, the concept of the proposed TV-MPC is generic and applicable for any HMCs. A typical HMC based on active neutral-point-clamped topology is adopted as a case study in this work. Comprehensive simulation and experimental studies are performed on an all silicon-carbide HMC prototype to validate the effectiveness of the proposed control scheme.

42 ENGINEERING↗

DOE OSTI2026

Temperature-Dependent Transport Characteristics of 2D MoS2 Channel FETs Grown Using Salt-Based Precursors

D Transition Metal Dichalcogenides (TMDs), particularly MoS2, are promising candidates for sub-10 nm Gate All Around (GAA) CMOS FETs. Salt-assisted Chemical Vapor Deposition (CVD) enable lateral MoS2 growth at atmospheric pressure and low temperatures. This work analyzes salt-based precursor-driven CVD-grown MoS2 FETs at various temperatures. MoS2 was grown using Ammonium Molybdate salt, sulfurized at 750∘C, and transferred onto p−Si3/SiO2 substrates. At room temperature, threshold voltage (VT) ranged from -35 V to -25 V, with a peak drain current of 1.2μA/μm. As temperature increased above 325K, VT shifted exponentially, and carrier mobility dropped significantly. At 400 K, the gate lost channel control, though gate leakage current remained low. These results are compared with non-salt-based MoS2 growth to assess salt precursor effects.Notice: This manuscript has been authored by UT-Battelle, LLC, under contract DE-AC05-00OR22725 with the US Department of Energy (DOE). The US government retains and the publisher, by accepting the article for publication, acknowledges that the US government retains a nonexclusive, paid-up, irrevocable, worldwide license to publish or reproduce the published form of this manuscript, or allow others to do so, for US government purposes. DOE will provide public access to these results of federally sponsored research in accordance with the DOE Public Access Plan (https://www.energy.gov/doe-public-access-plan).

Jones, Andrew [ORNL] (ORCID:0009000233849687)↗

DOE OSTI2023

Measurement of needle and armature dynamics in a gasoline direct injector by high-speed neutron imaging

In modern spark ignition engines, precise delivery of fuel with gasoline direct injection has become increasingly important in the effort to meet ever stricter efficiency and emissions regulations. Use of multiple small close-coupled injections has become more common in attempt to precisely control fuel distribution in the cylinder, but these strategies are hindered by nonlinear injection effects due to operation in the ballistic region of the solenoid-operated valve and due to armature bounce at the end of injection. Understanding the internal dynamics of the injector is crucial to minimizing and controlling non-linearity and shot-to-shot variation, but the experimental techniques available to date are capable only of tracking the position of either the top of the needle (via laser sensors or by monitoring current and voltage in the solenoid coil) or the bottom of the needle (via transparent nozzles or high-speed x-ray imaging). Furthermore, a complete picture of the axial and radial motion of valve needle has until now remained elusive. In this work, we present high-speed ensemble neutron transmission imaging of an entire 8-hole gasoline direct injector operating at 200 bar, allowing for both visualization and quantification of the actuation dynamics including lift and wobble of the valve ball, oscillation and bending of the valve needle, lift, rocking, and bounce of the armature, compression of the springs, and radial swelling of the solenoid during energization. Because neutrons offer high penetration through the metal injector while also being sensitive to the 1 H nuclei in fuel molecules, it is also possible to simultaneously see the fluid dynamics of the injection process, including filling of the sac volume, emanation of the spray through the nozzle holes and into the downstream gas, and the formation and evolution of fuel films on the tip of the injector and the walls of the spray container.

33 ADVANCED PROPULSION SYSTEMS↗

DOE OSTI2020

Transient voltage-reversal in transformers with multiple secondary coils

By using a transformer with multiple secondary coils, a single unipolar power source can drive multiple loads that have different steady-state operating-voltage requirements. We show that, during initial turn-on, a transient voltage that is opposite in sign to the operating voltage can be induced in one or more of the secondary coils. This is because the surging currents in the coils during turn-on produce a strong inductive interaction between all the coils. In a particular secondary coil, the voltage induced by a neighboring secondary can be larger, and opposite in sign to, the voltage directly induced by the primary coil. The effect is transient because, when the secondary circuits reach their steady-state operating currents, they no longer couple inductively to each other. We also show that, during the turn-on period, the voltage induced in a secondary coil can be significantly larger than its steady-state voltage. These transient effects are controlled by the values of the "coil-coupling" parameters, which are functions of the transformer geometry and of the magnetic permeability and electrical resistivity of the materials used. The results are derived from the circuit equations, and verified using PSpice simulations.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2020

HEMP Testing of Substation Yard Circuit Breaker Control and Protective Relay Circuits

There are concerns about the effects of High-Altitude Electromagnetic Pulses (HEMP) on the electric power grid. Activities to date tested and analyzed vulnerability of digital protective relays (DPRs) used in power substations, but the effect of HEMP on the greater substation environment is not well known. This work establishes a method of testing the vulnerability of circuit breaker control and protective relay circuits to the radiated E1 pulse associated with HEMP based on coupling to the cables in a substation yard. Two DPRs from Schweitzer Engineering Laboratories, Inc. were independently tested. The test setup also included a typical cable in a substation yard with return plane to emulate the ground grid and other ground conductors near the yard cable, cabinetry housing the installed DPRs, station battery and battery charger, terminal block elements, and a breaker simulator to emulate a substation yard configuration. The DPRs were powered from the station battery and the transformer inputs energized with a three-phase source to maintain typical operating conditions during the tests. Vulnerability testing consisted of a conducted E1 pulse injected into the center of the yard cable of the DPR circuits. Current measurements on the yard cable and DPR inputs indicated significant attenuation of the conducted pulse arriving at the control house equipment from the emulated substation yard. This reduction was quantified with respect to the equivalent open-circuit voltage on the yard cable. No equipment damage or undesired operation occurred on the tested circuits for values below 180 kV, which is significantly higher than the anticipated coupling to a substation yard cable.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2023

High-Efficiency Modular SiC-based Power-Converter for Flexible-CHP Systems with Stability-Enhanced Grid-Support Functions

This project seeks to develop a modular, scalable MV power converter featuring stability-enhanced grid-support functions for future grid-interface applications in flexible combined heat and power (F-CHP) cogeneration plants, being fully compliant with the IEEE Standard 1547, category B—for operation in local areas with high aggregated distributed energy resource (DER) penetration, and also with the IEEE standard for the specification of microgrid controllers, namely IEEE Std 2030.7, with the goal to enable F-CHP systems for both microgrid and standalone applications. Further, the proposed converter will use a modular circuit topology, the MMC, which is scalable both in voltage and current by interconnecting power-cell building blocks, thus flexibly suiting the needs of F-CHP systems in the 1–20 MWe range. Furthermore, the use of 10 kV SiC MOSFET devices will minimize the number of power-cells needed to operate in 2–13.8 kV MV distribution systems, but more importantly, they will render feasible a power conversion efficiency > 98 %, and a power density > 10 kW/l. This is highly relevant given that these are two key performance metrics that will further increase the value of F-CHP systems by shortening the time required to recover their investment costs.

14 SOLAR ENERGY↗