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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Development of a model and computer code to describe solar grade silicon production processes

Two computer codes were developed for describing flow reactors in which high purity, solar grade silicon is produced via reduction of gaseous silicon halides. The first is the CHEMPART code, an axisymmetric, marching code which treats two phase flows with models describing detailed gas-phase chemical kinetics, particle formation, and particle growth. It can be used to described flow reactors in which reactants, mix, react, and form a particulate phase. Detailed radial gas-phase composition, temperature, velocity, and particle size distribution profiles are computed. Also, deposition of heat, momentum, and mass (either particulate or vapor) on reactor walls is described. The second code is a modified version of the GENMIX boundary layer code which is used to compute rates of heat, momentum, and mass transfer to the reactor walls. This code lacks the detailed chemical kinetics and particle handling features of the CHEMPART code but has the virtue of running much more rapidly than CHEMPART, while treating the phenomena occurring in the boundary layer in more detail.

Gould, R. K.↗
NASA NTRS1979

Progress on the Dow Corning process for solar-grade silicon

The Dow Corning approach to increasing the resistivity of solar-grade silicon from about 0.04 ohm-cm (40 ppma B) to greater than 0.1 ohm-cm (10 ppma B) involves the use of high-purity raw materials carbothermically reduced in a specially designed electric arc furnace. Final purification occurs during Czochralski crystal growth of a polycrystalline ingot. This small-scale purification technology has resulted in silicon that has been fabricated into solar cells with a maximum AM1 conversion efficiency of 13.4%.

Hunt, L. P.↗
NASA NTRS1980

Low cost solar array project: Experimental process system development unit for producing semiconductor-grade silicon using silane-to-silicon process

The design, fabrication, and installation of an experimental process system development unit (EPSDU) were analyzed. Supporting research and development were performed to provide an information data base usable for the EPSDU and for technological design and economical analysis for potential scale-up of the process. Iterative economic analyses were conducted for the estimated product cost for the production of semiconductor grade silicon in a facility capable of producing 1000-MT/Yr.

Source record↗
NASA NTRS1981

Development of processes for the production of solar grade silicon from halides and alkali metals, phase 1 and phase 2

High temperature reactions of silicon halides with alkali metals for the production of solar grade silicon are described. Product separation and collection processes were evaluated, measure heat release parameters for scaling purposes and effects of reactants and/or products on materials of reactor construction were determined, and preliminary engineering and economic analysis of a scaled up process were made. The feasibility of the basic process to make and collect silicon was demonstrated. The jet impaction/separation process was demonstrated to be a purification process. The rate at which gas phase species from silicon particle precursors, the time required for silane decomposition to produce particles, and the competing rate of growth of silicon seed particles injected into a decomposing silane environment were determined. The extent of silane decomposition as a function of residence time, temperature, and pressure was measured by infrared absorption spectroscopy. A simplistic model is presented to explain the growth of silicon in a decomposing silane enviroment.

Dickson, C. R.↗
NASA NTRS1981

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The engineering design, fabrication, assembly, operation, economic analysis, and process support research and development for an Experimental Process System Development Unit for producing semiconductor-grade silicon using the slane-to-silicon process are reported. The design activity was completed. About 95% of purchased equipment was received. The draft of the operations manual was about 50% complete and the design of the free-space system continued. The system using silicon power transfer, melting, and shotting on a psuedocontinuous basis was demonstrated.

Source record↗
NASA NTRS1983

The dimensional stability analysis of seventeen stepped specimens of 18Ni 200 grade, PH13-8Mo and A-286

This report documents the results of a dimensional stability analysis of seventeen stepped specimens that were used in the evaluation of factors influencing warpage in metallic alloys being used for cryogenic wind tunnel models. Specimens used in the analysis were manufactured from 18Ni 200 Grade Maaraging steel, PH13-8Mo, and A-286 stainless steel. Quantitative data are provided on the behavior of the specimens due to the effects of both machining and cryogenic cycling effects.

Wigley, D. A.↗
NASA NTRS1983

Plasma volume, renin, and vasopressin responses to graded exercise after training

Four male subjects underwent a series of ergometer trials to test the hypothesis that training-induced hypervolemia produces a reduction in the relative change of plasma volume, vasopressin, and renin activity levels. Sitting ergometer exercise was performed for 2 hr per day for 8 consecutive days and the VO2 was monitored. A second phase involved a graded exercise and recording of the VO2 and HR, as well as the taking of blood samples to measure the plasma osmolality, the vasopressin content, and the renin activity. The training was found to reduce the plasma volume levels for a given work load. Hypervolemia was induced by a training-produced plasma volume expansion. The osmolality, vasopressin content, and renin activity increased with training. A threshold work intensity of 50 percent was identified for changes in the osmolality and the stimulation of renin activity and vasopressin increase. The maintenance of a certain level of intensity during training is concluded necessary to stimulate the hypervolemic response.

Convertino, V. A.↗
NASA NTRS1983

Flat-plate solar array project: Experimental process system development unit for producing semiconductor-grade silicon using the silane-to-silicon process

The process technology for the manufacture of semiconductor-grade silicon in a large commercial plant by 1986, at a price less than $14 per kilogram of silicon based on 1975 dollars is discussed. The engineering design, installation, checkout, and operation of an Experimental Process System Development unit was discussed. Quality control of scaling-up the process and an economic analysis of product and production costs are discussed.

Source record↗
NASA NTRS1986

Characterization of solar-grade silicon produced by the SiF4-Na process

A process was developed for producing low cost solar grade silicon by the reaction between SiF4 gas and sodium metal. The results of the characterization of the silicon are presented. These results include impurity levels, electronic properties of the silicon after crystal growth, and the performance of solar photovoltaic cells fabricated from wafers of the single crystals. The efficiency of the solar cells fabricated from semiconductor silicon and SiF4-Na silicon was the same.

Sanjurjo, A.↗
NASA NTRS1986

Continuous blood densitometry - Fluid shifts after graded hemorrhage in animals

Rapid fluid shifts in four pigs and two dogs subjected to graded hemorrhage are investigated. Arterial blood density (BD), mean arterial pressure (MAP), central venous pressure (CVP), arterial plasma density (PD), hematocrit (Hct) and erythrocyte density were measured. The apparatus and mechancial oscillator technique for measuring density are described. Fluid shifts between red blood cells and blood plasma and alterations in the whole-body-to-large vessel Hct, F(cell) are studied using two models. The bases of the model calculations are discussed. A decrease in MAP, CVP, and BP is detected at the beginning of hemorrhaging; continued bleeding results in further BD decrease correlating with volume displacement. The data reveal that at 15 ml/kg blood loss the mean PD and BD dropped by 0.99 + or - 0.15 and 2.42 + or 0.26 g/liter, respectively, and the Hct dropped by 2.40 + or 0.47 units. The data reveal that inward-shifted fluid has a higher density than normal ultrafiltrate and/or there is a rise in the F(cell) ratio. It is noted that rapid fluid replacement ranged from 5.8 + or - 0.8 to 10.6 + or - 2.0 percent of the initial plasma volume.

Hinghofer-Szalkay, H.↗
NASA NTRS1987

Characterization of graded interface In(x)Ga(1-x)As/In(0.52)Al(0.48)As (x between 0.53 and 0.70) structures grown by molecular-beam epitaxy

Modulation-doped In(x)Ga(1-x)As/In(0.52)Al(0.48)As/InP structures were grown by molecular-beam epitaxy with x values between 53 and 70 percent. For pseudomorphic cases, graded instead of abrupt interfaces were used. Hall mobility and persistent photoconductivity measurements as a function of temperature were used to characterize samples with different structural parameters. Consistent trends in the variation of mobilities and two-dimensional carrier concentration, n(2D), under light and dark conditions have been observed and discussed in terms of applicable scattering mechanisms. The Hall mobilities are comparable to the best results obtained to date but with significantly higher n(2D) concentration.

Peng, C. K.↗
NASA NTRS1988

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

Derry, P. L.↗
NASA NTRS1988

Kabbaldurga-type charnockitization: A local phenomenon in the granulite to amphibolite grade transition zone

In the deeply eroded Precambrian crust of South India and Sri Lanka, a series of spectacular exposures shows progressive development of coarse-grained charnockite through dehydration of amphibolite grade gneisses in different arrested stages. At Kabbaldurga, charnockitization of Archaean grey biotite-hornblende gneisses occurred about 2.5 Ga ago and evidently was induced by the influx of external carbonic fluids along a system of ductile shears and the foliation planes. The results of oxygen isotope thermometry and of geothermobarometry in adjacent areas indicate a P-T regime of 700 to 750 C and 5 to 7 kb. The decrease of water activity in the fluid infiltrated zones caused an almost complete breakdown of hornblende and biotite and the new growth of hypersthene. Detailed petrographic and geochemical studies revealed marked changes in mineralogy and chemistry from granodioritic to granitic which document the metasomatic nature of the process.

Raith, M.↗
NASA NTRS1988

Geochemical characteristics of charnockite and high grade gneisses from Southern Peninsular Shield and their significance in crustal evolution

Presented here are the results of detailed investigations encompassing externsive structural mapping in the charnockite-high grade gneiss terrain of North Arcot district and the type area in Pallavaram in Tamil Nadu supported by petrography, mineral chemistry, major, minor and REE distribution patterns in various lithounits. This has helped in understanding the evolutionary history of the southern peninsular shield. A possible tectonic model is also suggested. The results of these studies are compared with similar rock types from parts of Andhra Pradesh, Kerala, Sri Lanka, Lapland and Nigeria which has brought about a well defined correlation in geochemical characteristics. The area investigated has an interbanded sequence of thick pile of charnockite and a supracrustal succession of shelf type sediments, layered igneous complex, basic and ultrabasic rocks involved in a complex structural, tectonic, igneous and metamorphic events.

Sugavanam, E. B.↗
NASA NTRS1989

Calculation of the electron wave function in a graded-channel double-heterojunction modulation-doped field-effect transistor

Three double-heterojunction modulation-doped field-effect transistor structures with different channel composition are investigated theoretically. All of these transistors have an In(x)Ga(1-x)As channel sandwiched between two doped Al(0.3)Ga(0.7)As barriers with undoped spacer layers. In one of the structures, x varies from 0 from either heterojunction to 0.15 at the center of the channel quadratically; in the other two, constant values of x of 0 and 0.15 are used. The Poisson and Schroedinger equations are solved self-consistently for the electron wave function in all three cases. The results showed that the two-dimensional electron gas (2DEG) concentration in the channel of the quadratically graded structure is higher than the x = 0 one and slightly lower than the x = 0.15 one, and the mean distance of the 2DEG is closer to the center of the channel for this transistor than the other two. These two effects have important implications on the electron mobility in the channel.

Mui, D. S. L.↗
NASA NTRS1989

High-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well lasers on Si substrates

A high-power low-threshold graded-index separate confinement heterostructure AlGaAs single quantum well laser on Si substrates has been demonstrated for the first time by a hybrid growth of migration-enhanced molecular beam epitaxy followed by metalorganic vapor phase epitaxy. The quantum well laser showed an output power of more than 400 mW per facet under pulsed conditions. A room-temperature threshold current of 300 mA was obtained with a differential quantum efficiency of 40 percent without facet coating. The threshold current density was 550 A/sq cm for a cavity length of 500 microns. These results show the highest peak power reported to date for low-threshold lasers on Si substrates. The full width at half maximum of the far-field pattern parallel to the junction was 6 deg. Threshold current densities as low as 250 A/sq cm were obtained for lasers on GaAs substrates.

Kim, Jae-Hoon↗
NASA NTRS1990

Ensemble Monte Carlo characterization of graded Al(x)Ga(1-x)As heterojunction barriers

The current-voltage characteristics of graded Al(x)Ga(1-x)As heterojunction barriers were investigated using a self-consistent ensemble Monte Carlo method. Results are presented for barriers with two doping levels (10 to the 15th/cu cm and 10 to the 17th/cu cm) and two barrier heights (100 and 265 meV). It was found that the lower barrier structure exhibited little rectification at room temperature at both doping levels, while the higher barrier exhibited considerable rectification. The structures with the lower doping value exhibited a smaller current in both forward and reverse regions, due to space-charge effect. The results of studies of the energy and momentum distribution functions along the barrier indicate that the assumption of drifted Maxwellian distribution used in energy-momentum models is not justified for Gamma valley electrons.

Kamoua, R.↗