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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The on-site monitor is a portable device which can be easily connected to a Site Data Acquisition Subsystem to allow readouts of realtime sensor data in voltage or engineering units at instrumented solar heating and cooling sites. The design package consists of the performance specification, performance requirements cross reference, and the acceptance test procedure.
A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.
Integrated circuit arrays for solid state inverters, noting Johnson counter and packaging
Copper wire bonds have replaced gold wire bonds in the majority of commercial semiconductor devices for the latest technology nodes. Although economics has been the driving mechanism to lower semiconductor packaging costs for a savings of about 20% by replacing gold wire bonds with copper, copper also has materials property advantages over gold. When compared to gold, copper has approximately: 25% lower electrical resistivity, 30% higher thermal conductivity, 75% higher tensile strength and 45% higher modulus of elasticity. Copper wire bonds on aluminum bond pads are also more mechanically robust over time and elevated temperature due to the slower intermetallic formation rate - approximately 1/100th that of the gold to aluminum intermetallic formation rate. However, there are significant tradeoffs with copper wire bonding - copper has twice the hardness of gold which results in a narrower bonding manufacturing process window and requires that the semiconductor companies design more mechanically rigid bonding pads to prevent cratering to both the bond pad and underlying chip structure. Furthermore, copper is significantly more prone to corrosion issues. The semiconductor packaging industry has responded to this corrosion concern by creating a palladium coated copper bonding wire, which is more corrosion resistant than pure copper bonding wire. Also, the selection of the device molding compound is critical because use of environmentally friendly green compounds can result in internal CTE (Coefficient of Thermal Expansion) mismatches with the copper wire bonds that can eventually lead to device failures during thermal cycling. Despite the difficult problems associated with the changeover to copper bonding wire, there are billions of copper wire bonded devices delivered annually to customers. It is noteworthy that Texas Instruments announced in October of 2014 that they are shipping microcircuits containing copper wire bonds for safety critical automotive applications. An evaluation of copper wire bond technology for applicability to spaceflight hardware may be warranted along with concurrently compiling a comprehensive understanding of the failure mechanisms involved with copper wire bonded semiconductor devices.
The purpose of this project is to characterize and correlate Electrostatic Discharge (ESD) sensitivity levels of an Integrated Circuit (IC) package using Transmission Line Pulse (TLP) and Human Body Model (HBM) methods. This characterization will be used as a baseline ESD sensitivity level to demonstrate improvement to the ESD sensitivity of the IC package through the use of EPI-FLO(Trade Mark) Polymer Voltage Suppression (PVS) protection devices developed and manufactured by Electronic Polymers, Inc. (EPI).
NASA Device Independent Graphics Library (NASADIG) is general-purpose computer-graphics package for computer-based engineering and management applications which gives opportunity to translate data into effective graphical displays for presentation. Features include two- and three-dimensional plotting, spline and polynomial interpolation, control of blanking of areas, multiple log and/or linear axes, control of legends and text, control of thicknesses of curves, and multiple text fonts. Included are subroutines for definition of areas and axes of plots; setup and display of text; blanking of areas; setup of style, interpolation, and plotting of lines; control of patterns and of shading of colors; control of legends, blocks of text, and characters; initialization of devices; and setting of mixed alphabets. Written in FORTRAN 77.
Power electronics packages typically comprise a dielectric substrate bonded to a metal layer and attached to heat sinks using a low-thermal-conductivity solder. These multiple layers increase the effective thermal resistance of the package and are responsible for package failures under cyclic thermal loads. Bonding the aluminum nitride dielectric layer (AlN) directly to a low coefficient of thermal expansion (CTE) aluminum silicon carbide (AlSiC) cold plate using copper-aluminum (Cu-Al) transient liquid phase (TLP) bonding has been shown to improve the mechanical reliability of the power electronic packages while making the package more compact by bringing the cooling solutions closer to the devices. This study aims to characterize the Cu-Al bonds formed during the TLP bonding of AlSiC with three different power electronics substrates: pure aluminum nitride (AlN), aluminum (DBA), and copper (DBC). The material compositions and microstructures of the bonds were analyzed using scanning electron microscopy (SEM), x-ray spectroscopy (EDS), confocal scanning acoustic microscopy (C-SAM), and x-ray diffraction (XRD). ..alpha..-Al solid compound was identified as the dominant phase in AlN-AlSiC and Al-AlSiC, with a notable presence of SiC particles. In contrast, three intermetallic phases - ..theta..-CuAl2, ..eta..-CuAl, and ..gamma..'- Cu9Al4 - were observed in the Cu-AlSiC bond. A computational solid-state diffusion model was developed to predict the intermetallic compounds (IMCs) formed during Cu-Al TLP bonding in each system, which supported the observation that an initial Cu volume fraction of 20 % in the material layers produced a final bond composition of >95 % Al with minimal IMC growth. However, increased Cu concentrations produced higher concentration gradients, leading to increased growth of IMCs, Kirkendall voids, and interstitial cracks.
—The switching performance of large area (1cm x 1cm) monolithic 1.2 kV 50 mΩ 4H-SiC bidirectional field effect transistor (BiDFET) with integrated JBS diodes is reported for the first time. The devices were fabricated in a 6-inch commercial foundry and then packaged in a custom-designed four-terminal module. The switching performance of the BiDFET has been observed to be 1.4x better than that of its internal JBSFETs. Dynamic characterization was performed at 800 V with different gate resistances, current levels and case temperatures. An increase in switching losses was observed for the BiDFET with increasing gate resistance and current level as observed for SiC power MOSFETs. The BiDFET showed a 9% reduction in total switching loss from 25 °C to 150 °C with a current of 10 A.
LEM optical astronomy package /OAP/ containing astronomical telescope, spectrophotometer, data processing subsystem and other devices, for unmanned landing and life support
Alignment viewed through microscope. Alignment jig positions shadow mask on charge-coupled device (CCD) so metal film deposited on it precisely. Allows CCD package to be inserted and removed without disturbing alignment of mask. Holds CCD packages securely and isolates it electrostatically while providing electrical contact to each of its pins. When alignment jig assembled with CCD, used to move mask under micrometer control.
Subsurface penetration by coring, drilling or abrading is of great importance for a large number of space and earth applications. An Ultrasonic/Sonic Drill/Corer (USDC) has been in development at JPL's Nondestructive Evaluation and Advanced Actuators (NDEAA) lab as an adaptable tool for many of these applications. The USDC uses a novel drive mechanism to transform the high frequency ultrasonic or sonic vibrations of the tip of a horn into a lower frequency sonic hammering of a drill bit through an intermediate free-flying mass. The USDC device idea has been implemented at various scales from handheld drills to large diameter coring devices. A series of computer programs that model the function and performance of the USDC device were developed and were later integrated into an automated modeling package. The USDC has also evolved from a purely hammering drill to a rotary hammer drill as the design requirements increased form small diameter shallow drilling to large diameter deep coring. A synthesis of the Auto-Gopher development is presented in this paper.
This project conducts research to develop new power electronics thermal management technologies to increase power density, enable high WBG temperature operation, and decrease cost. One of the main challenges to achieving high power densities is associated with packaging of high-temperature (up to 250 degrees C) WBG devices near lower-temperature-rated components (e.g., electrical boards and capacitors). Additionally, the high junction temperatures of the WBG devices will result in large temperature gradients through the power module layers, which will present reliability challenges and require higher-temperature substrates and bonding materials.
This presentation will include information about Graphics Processing Unit (GPU) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
This presentation will include information about Double Data Rate (DDR) technology, NASA Electronic Parts and Packaging (NEPP) tasks and their purpose, collaborations, a roadmap, NEPP partners, results to date, and future plans.
This suite consists of a multi-package ecosystem featuring detector emulators, EPICS areaDetector drivers, and remote server frameworks designed for the Advanced Light Source (ALS). Engineered for high-bandwidth devices—including VFCCD, Timepix3, Timepix4, and related pixel detectors—the software simulates hardware, wraps vendor SDKs into remote-callable servers, and integrates with open-source control systems. Key Capabilities: Distributed SDK Architecture: Server packages wrap hardware-specific SDKs, allowing areaDetector drivers to execute remote framework calls. This isolates proprietary libraries from the EPICS IOC, enhancing stability and enabling distributed computing across beamline networks. Device Support: Custom drivers for VFCCD, the Timepix family, and similar sensors optimize the data path from hardware control to high-speed transport. Full-Stack Emulation: Sophisticated emulator packages allow end-to-end pipeline testing and software development without requiring physical hardware or beam time. Integrated Workflows: Supports high-bandwidth streaming for real-time analysis and robust, metadata-rich file-based workflows (e.g., HDF5/NeXus). By standardizing interfaces across heterogeneous hardware, this suite reduces technical debt. It provides the ALS with a scalable, open-source solution to manage massive data rates within a unified control environment.
The electrician pictured is installing a General Electric Ground Fault Interrupter (GFI), a device which provides protection against electrical shock in the home or in industrial facilities. Shocks due to defective wiring in home appliances or other electrical equipment can cause severe burns, even death. As a result, the National Electrical Code now requires GFIs in all new homes constructed. This particular type of GFI employs a sensing element which derives from technology acquired in space projects by SCI Systems, Inc., Huntsville, Alabama, producer of sensors for GE and other manufacturers of GFI equipment. The sensor is based on the company's experience in developing miniaturized circuitry for space telemetry and other spacecraft electrical systems; this experience enabled SCI to package interruptor circuitry in the extremely limited space available and to produce sensory devices at practicable cost. The tiny sensor measures the strength of the electrical current and detects current differentials that indicate a fault in the functioning of an electrical system. The sensing element then triggers a signal to a disconnect mechanism in the GFI, which cuts off the current in the faulty circuit.
The goal of this technology is to provide improved calibration and measurement sensitivity to the Soil Moisture Active Passive Mission (SMAP) radiometer. While RF switches have been used in the past to calibrate microwave radiometers, the switch used on SMAP employs several techniques uniquely tailored to the instrument requirements and passive remote-sensing in general to improve radiometer performance. Measurement error and sensitivity are improved by employing techniques to reduce thermal gradients within the device, reduce insertion loss during antenna observations, increase insertion loss temporal stability, and increase rejection of radar and RFI (radio-frequency interference) signals during calibration. The two legs of the single-pole double-throw reference switch employ three PIN diodes per leg in a parallel-shunt configuration to minimize insertion loss and increase stability while exceeding rejection requirements at 1,413 MHz. The high-speed packaged diodes are selected to minimize junction capacitance and resistance while ensuring the parallel devices have very similar I-V curves. Switch rejection is improved by adding high-impedance quarter-wave tapers before and after the diodes, along with replacing the ground via of one diode per leg with an open circuit stub. Errors due to thermal gradients in the switch are reduced by embedding the 50-ohm reference load within the switch, along with using a 0.25-in. (approximately equal to 0.6-cm) aluminum prebacked substrate. Previous spaceflight microwave radiometers did not embed the reference load and thermocouple directly within the calibration switch. In doing so, the SMAP switch reduces error caused by thermal gradients between the load and switch. Thermal issues are further reduced by moving the custom, highspeed regulated driver circuit to a physically separate PWB (printed wiring board). Regarding RF performance, previous spaceflight reference switches have not employed high-impedance tapers to improve rejection. The use of open-circuit stubs instead of a via to provide an improved RF short is unique to this design. The stubs are easily tunable to provide high rejection at specific frequencies while maintaining very low insertion loss in-band.
During the Apollo program, unique ALSEP (Apollo Lunar Surface Experiments Package) stations were deployed and left on the surface for long term data collection. Powered by a SNAP-27 electrical power source, the packages continued to transmit useful data until September 30, 1977 (the end of the Fiscal year and termination of the budget). The instruments were varied but included an active seismic experiment (ASE), charged particle experiments, magnetometer experiment, micro-meteoroide/bolide detection experiments. Only only one, the Laser Ranging Retro-Reflector (LRRR) was continued to be used to the present day due to the passive nature of the device. After a dearth of data during an absence of 50 years, is it possible to restart similar packages using the advances in nano-sat technologies? An innovation effort is proposed that would first look at a 2U nano-sat package evolving to an eventual radio-isotope powered system that could be either part of a lunar lander or as an independent package. In the first phase, the packages would only survive during the Lunar day. In a second phase, the later radio-isotope options would place the surface packages in a semi-dormant mode during the Lunar night cycle. Communication capability developed in the TechEdSat-n flight series (UHF, S, X and optical bands) would help to independently close the link and potentially explore IoT devices that were powered only in the sunlight. In addition, limited mobility in the form factor of a nano-rover might also greatly extend the utility of such packages while adding evolutionary capability - and finally continue where the Apollo program was forced to leave off.