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Plasma switch proposed for use in high-voltage, high-current pulse power system. Designed not only to out-perform conventional spark-gap switch but also relatively compact and lightweight. Features inverse-pinch configuration to prevent constriction of current sheets into filaments, plus multiple-ring-electrode structure to resist high-voltage breakdown.
A lithographically printed microwave antenna that can be switched and tuned has been developed. The structure consists of a rectangular metallic "patch" radiator patterned on a thin ferroelectric film that was grown on high-resistivity silicon. Such an antenna may one day enable a single-phased array aperture to transmit and receive signals at different frequencies, or it may provide a simple way to reconfigure fractal arrays for communications and radar applications.
A 30 kW class arcjet Power Conditioning Unit, PCU, was built and tested during this Phase 2 SBIR contract. The PCU is an improved version of two previously developed PCU's. All of these units are 3-phase, 20 kHz buck regulators with current mode feed back to modulate the duty cycle to control the arcjet current at any selected operating point. The steady state control can assure arcjet stability despite the negative dynamic resistance of the arc discharge. The system also has a circuit to produce a high voltage start pulse to breakdown the gas and initiate the arc. The start pulse is formed by temporarily switching a short current path across the output terminals with a special solid state switching array. The switches then open rapidly, and the energy stored in the output inductors of the buck regulator produces a pulse of approximately 2500 V for approximately 500 nsec. The system was tested and modified until the transition to steady operation occurred after start up with a very small surge current overshoot. The system also can withstand a direct short circuit across the output without damage. The automatic feed back control simply reduces the duty cycle to hold the current at the set point. When the short is removed the full power output is immediately restored. This latest version arcjet PCU is conduction cooled to remove waste heat by conduction to the base plate. This unit is closer to flight a type of design than the previous functional bread boards. Waste heat is small because the PCU has a very high efficiency, 296 percent. The PCU was extensively tested with resistor loads to simulate operation with an arcjet. The unit was tested with ammonia arcjets at the Jet Propulsion Laboratory. Approximately 400 hours of testing were completed, with several starts. Many hours were also demonstrated with resistive loads. Some testing with hydrogen arcjets was also carried out at NASA LeRC. This system concept is now the design base for the ATTD program.
GE, the University of Tennessee, and Oak Ridge National Laboratory collaborated from 2020 to 2023 developing two key technologies for improving the viability of fuel switching and load following in thermal utility plants: a) cost-effective weld overlay compositions for boiler tubing b) cathodic arc coatings that deliver improvements in both erosion resistance and oxidation resistance in high temperature steam for HP turbine blades The team worked through a robust, logical project map to de-risk these two technologies and advance them from TRL 3 to TRL 6. For the cost-effective weld overlay, the team developed a ferritic filler material which was fabricated at a vendor for 18% the average market cost of Inconel 625 wire, had a corrosion rate 3x lower in conditions simulating a biomass-fired superheater and 10x lower in conditions simulating a coal-fired superheater, and was fabricated into prototype overlaid tubing that passed ASME requirements including transverse bending, dye penetrant inspection, and ASTM G-76 evaluation. For the cathodic arc coatings applied to steam turbine blades, the team developed a novel composition that was successfully transferred to a qualified vendor. The vendor was able to produce coated prototypes with 4x the as-deposited erosion resistance and 10.4x the post-steam-exposure erosion resistance of the TiN coating the vendor currently applies on GE steam turbine components, without significantly increasing process cost. These coated prototypes also passed a GE inspection and showed favorable performance in high temperature erosion, nanoindentation, sliding wear, scratch adhesion, and high cycle fatigue testing. If successfully deployed by GE, it is anticipated that the technologies will enable the following: • 25%-50% increase in time between outages for both boilers and HP turbines. • 50% decrease in cost for weld overlay on a per foot basis relative to todays NiCr alloys. • Adequate oxidation resistance and erosion for HP turbine inlet steam at >620°C and >220 bar. • No need for changes in component supply chain or any notable Capital Expenditures. 5 Decreasing component cost, increasing performance, and extending time between outages represent direct value propositions to GE and their customers. For the American consumer, these objectives translate into increased grid reliability (fewer unexpected outages), decreased Levelized Cost of Electricity, and improved environmental health (low-loading/load following to accelerate penetration of renewables). The results also have implications for wear resistant tooling, wire arc additive manufacturing, more durable components for syngas cleanup, and deployment of more efficient thermochemical pathways for carbon negative fuel production
A dual measurement ablation sensor for measuring both char-interface and surface recession at a point in an ablating material is described. The sensor permits measurement of the thickness of the char layer. Char-interface recession is indicated by a drop in the resistance to a current passed through the ablation material. Surface recession is indicated by the closing of an electrical circuit when melting causes the release of a spring switch.
Bending actuators of a proposed type would partly resemble ordinary bending actuators, but would include simple additional components that would render them capable of exerting large forces at small displacements. Like an ordinary bending actuator, an actuator according to the proposal would include a thin rectangular strip that would comprise two bonded layers (possibly made of electroactive polymers with surface electrodes) and would be clamped at one end in the manner of a cantilever beam. Unlike an ordinary bending actuator, the proposed device would include a rigid flat backplate that would support part of the bending strip against backward displacement; because of this feature, the proposed device is called a backed bending actuator. When an ordinary bending actuator is inactive, the strip typically lies flat, the tip displacement is zero, and the force exerted by the tip is zero. During activation, the tip exerts a transverse force and undergoes a bending displacement that results from the expansion or contraction of one or more of the bonded layers. The tip force of an ordinary bending actuator is inversely proportional to its length; hence, a long actuator tends to be weak. The figure depicts an ordinary bending actuator and the corresponding backed bending actuator. The bending, the tip displacement (d(sub t)), and the tip force (F) exerted by the ordinary bending actuator are well approximated by the conventional equations for the loading and deflection of a cantilever beam subject to a bending moment which, in this case, is applied by the differential expansion or contraction of the bonded layers. The bending, displacement, and tip force of the backed bending actuator are calculated similarly, except that it is necessary to account for the fact that the force F(sub b) that resists the displacement of the tip could be sufficient to push part of the strip against the backplate; in such a condition, the cantilever beam would be effectively shortened (length L*) and thereby stiffened and, hence, made capable of exerting a greater tip force for a given degree of differential expansion or contraction of the bonded layers. Taking all of these effects into account, the cantilever-beam equations show that F(sub b) would be approximately inversely proportional to d(sup 1/2) for d less than a calculable amount, denoted the transition displacement (dt). For d less than d(sub t), part of the strip would be pressed against the backplate. Therefore, the force F(sub b) would be very large for d at or near zero and would decrease as d increases toward d(sub t). At d greater than d(sub t), none of the strip would be pressed against the backplate and F(sub b) would equal the tip force F of the corresponding ordinary bending actuator. The advantage of the proposal is that a backed bending actuator could be made long to obtain large displacement when it encountered little resistance but it could also exert a large zero-displacement force, so that it could more easily start the movement of a large mass, throw a mechanical switch, or release a stuck mechanism.
An apparatus and technique have been devised for measuring the radiation pattern of a microwave patch antenna that is one of a number of identical units that have been fabricated in a planar array on a high-resistivity silicon wafer. The apparatus and technique are intended, more specifically, for application to such an antenna that includes a DC-controlled microelectromechanical system (MEMS) actuator for switching the antenna between two polarization states or between two resonance frequencies. Prior to the development of the present apparatus and technique, patch antennas on wafers were tested by techniques and equipment that are more suited to testing of conventional printed-circuit antennas. The techniques included sawing of the wafers to isolate individual antennas for testing. The equipment included custom-built test fixtures that included special signal launchers and transmission-line transitions. The present apparatus and technique eliminate the need for sawing wafers and for custom-built test fixtures, thereby making it possible to test antennas in less time and at less cost. Moreover, in a production setting, elimination of the premature sawing of wafers for testing reduces loss from breakage, thereby enhancing yield.
A memory system is provided, of the type that includes an error-correcting circuit that detects and corrects, that more efficiently utilizes the capacity of a memory formed of groups of binary cells whose states can be inadvertently switched by ionizing radiation. Each memory cell has an asymmetric geometry, so that ionizing radiation causes a significantly greater probability of errors in one state than in the opposite state (e.g., an erroneous switch from '1' to '0' is far more likely than a switch from '0' to'1'. An asymmetric error correcting coding circuit can be used with the asymmetric memory cells, which requires fewer bits than an efficient symmetric error correcting code.
It is observed experimentally that the sign of the Hall resistance can be flipped by a dc electric current in the twisted bilayer graphene (TBG) at 3/4 filling of the fourfold degenerate conduction flat bands. The experiment implies a switching of the valley polarization (VP) and topology in TBG. In this work, we present a theory on the current-induced switching of VP and topology. The presence of current in the bulk causes the redistribution of electron occupation in bands near the Fermi energy, which then deforms and shifts the band dispersion due to the Coulomb interaction. Above a critical current, the original occupied and empty bands can be swapped, resulting in the switching of VP and topology.
Here, this Letter reports on a vertical, bulk-conducting photoconductive semiconductor switch (PCSS) fabricated on an intrinsic Type IIa single-crystal diamond substrate. Under near-bandgap excitation at 225 nm with a 20 μ J pulse, a strong photocurrent response of 17.1 A at 1 kV DC bias magnitude is obtained by (i) tuning the optical trigger wavelength to the “matched-absorption” window (224–235 nm) near the band edge, where the optical penetration depth becomes comparable to the 500 μ m substrate thickness, and (ii) choosing the bias polarity ensuring electron-dominant conduction, given that electrons have a higher mobility than holes in diamond. The PCSS has an area-normalized responsivity of 54.2 mA W −1 cm −2 and an effective on-resistance of 8.48 Ω, with a fast 90%–10% transient fall time of 25 ns, attributed to carrier sweep-out. These results support vertical, bulk-conducting intrinsic diamond PCSS as a promising platform for high-power optical switching and provide new insight into intrinsic photoconductivity in diamond.
While drug resistance mutations can often be attributed to the loss of direct or solvent-mediated protein−ligand interactions in the drug-mutant complex, in this study we show that a resistance mutation for the picomolar HIV-1 capsid (CA)-targeting antiviral (GS-6207) is mainly due to the free energy cost of the drug-induced protein side chain reorganization in the mutant protein. Among several mutations, M66I causes the most suppression of the GS-6207 antiviral activity (up to ~84,000-fold), and only 83- and 68-fold reductions for PF74 and ZW-1261, respectively. To understand the molecular basis of this drug resistance, we conducted molecular dynamics free energy simulations to study the structures, energetics, and conformational free energy landscapes involved in the inhibitors binding at the interface of two CA monomers. To minimize the protein−ligand steric clash, the I66 side chain in the M66I−GS-6207 complex switches to a higher free energy conformation from the one adopted in the apo M66I. In contrast, the binding of GS-6207 to the wild-type CA does not lead to any significant M66 conformational change. Based on an analysis that decomposes the absolute binding free energy into contributions from two receptor conformational states, it appears that it is the free energy cost of side chain reorganization rather than the reduced protein−ligand interaction that is largely responsible for the drug resistance against GS-6207.
The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.
The effects of age and sex on the human-body responses to -50 torr LBNP were investigated in subjects who have undergone LBNP tests at the Kennedy Space Center. The comparison of results obtained on women and age-matched men indicated that men had larger relative increases in calf circumference and greater increases in peripheral resistance during the exposure to LBNP than the women; on the other hand, women displayed greater increases in thoracic impedance and heart rate. The comparison of the results on men of different ages (between 29 and 56 y) indicated that older subjects had greater increases in peripheral resistance and less heart rate elevation in response to LBNP. It is suggested that the age-related circulatory differences were due to a reduction in vagal response and a switch to predominant sympathetic nervous system influence in older men.
Two distinct electrical switching phenomena observed in experiments on commercial silver-filled epoxy: Depending on geometry of epoxy layer or strip and of metal electrical contacts, either transition from "off" (high-resistance) state at low applied electric field to "on" (low-resistance) state at high applied electric field; or transition from "on" (low resistance) at low applied electric field to "off" (high resistance) at high applied electric field. Improved understanding of phenomena leads to design of new and improved surge arrestors.
Multicomponent ultra-high temperature ceramics (MC-UHTCs) has garnered attention due to their improved thermo-mechanical and oxidation properties. MC-UHTC was progressively formed by adding a UHTC component at each step, producing binary, ternary and quaternary UHTC systems, processed by spark plasma sintering (SPS). Here, we investigate the role of multi-elements and thermochemical stability of the surface oxide layer formed during plasma arc jet exposure (T > 2500 °C) of MC-UHTCs using core-level X-ray photoelectron spectroscopy (XPS) correlated with the structural investigation. The results indicate that adding a UHTC component improves oxidation resistance due to the assemblage of refractory phases forming complex mixed oxides via preferential oxidation. XPS spectra of Ta4f, Nb3d, Ti1p, and Hf4f showed that the nature of the chemical bonds switched from metal carbides to metal oxides (metal oxy-carbides) in the binary system with retained metal carbides in ternary and quaternary UHTCs. The absence of a metal carbide peak in the high-resolution C1s scan of the binary system also supports this finding. The principal complex mixed oxide phases emanate in the exiguous oxidation of MC-UHTCs are quantified using Rietveld analysis. Overall, this study suggests that MC-UHTC is a promising material for possible application in thermal protection systems (TPS).
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.
A feasibility study was made of the application of silicon-controlled, rectifier series, resonant inverter, power conditioning technology to electric propulsion power processing operating from a 200 to 400 Vdc solar array bus. A power system block diagram was generated to meet the electrical requirements of a 20 CM hollow cathode, mercury bombardment, ion engine. The SCR series resonant inverter was developed as a primary means of power switching and conversion, and the analog signal-to-discrete-time-interval converter control system was applied to achieve good regulation. A complete breadboard was designed, fabricated, and tested with a resistive load bank, and critical power processor areas relating to efficiency, weight, and part count were identified.