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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 361 records · Page 20
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Model predictive control for matrix converter operating in current control mode with load current estimation

A matrix converter system operating in current control mode is provided. The matrix converter includes a switching matrix coupled between a low voltage side and a high voltage side, wherein the matrix converter is coupled at its low voltage side to a generator for receiving an input power including an input current and transforming the input power into an output power at its high voltage side, wherein a load is coupled to the high voltage side. The control system includes a load observer and a model predictive controller (MPC). The load observer is configured to estimate a load current that flows to the load from the high voltage side of the matrix converter as a function of a switching state of the switching matrix, an output voltage output at the high voltage side of the matrix converter, and the input current. The MPC is configured to select the switching state of the switching matrix to meet one or more control objectives defined by minimization of a multi-objective function that tracks the output voltage and the input current using the estimated load current.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Real Time-Optimal Power Flow-Based Distributed Energy Resource Management System (DERMS)

This project aims to promote lab-proven clean energy technology to commercially scalable versions of the technology, integrate the technology with broader systems, provide extended performance data, and validate the manufacturability and reliability of the technology. The lab-proven technology, RT-OPF DERMS, was developed and validated through previous U.S. Department of Energy-funded efforts, including Advanced Research Projects Agency-Energy funding under the Network Optimized Distributed Energy Systems program and Holy-Cross Energy High Impact Project. In the Advanced Research Projects Agency-Energy Network Optimized Distributed Energy Systems project, the RT-OPF DERMS was developed and implemented in multiple hardware platforms, demonstrating its performance and capabilities in the lab and field environments. The technology was also evaluated and matured via a participation in the U.S. Department of Energy I-Corps program, whose goal is to pair teams of researchers with industry mentors for an intensive 2-month training in which the researchers define technology value propositions, conduct customer discovery interviews, and develop viable market pathways for their technologies. These activities indicate the high technology maturity and Technology Readiness Level of the RT-OPF DERMS.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Voltage and temperature effects on low cobalt lithium-ion battery cathode degradation

Degradation of low cobalt lithium-ion cathodes was tested using a full factorial combination of upper cut-off voltage (4.0 V and 4.3 V vs. Li/Li + ) and operating temperature (25 °C and 60 °C). Half-cell batteries were analyzed with electrochemical and microstructural characterization methods. Electrochemical performance was assessed with galvanostatic cycling, cyclic voltammetry (CV), and electrochemical impedance spectroscopy (EIS) supported by distribution of relaxation times (DRT) analysis. Electrode microstructure was characterized with scanning electron microscopy (SEM), X-ray diffraction (XRD), and X-ray absorption near edge structure (XANES) imaging. Higher cut-off voltage cycling shows presence of NiO x formation, a low diffusivity rock-salt phase, in both CV and XRD data. XRD patterns confirmed that the rock-salt phase was beginning to form at the low cut-off voltage at high temperature, but in much lower intensity than at the high cut-off voltage. Higher temperature accelerates degradation processes at both voltages. Degradation factors at high temperature include NiO x formation, cathode material dissolution, and electrolyte decomposition. SEM analysis suggests that supporting phases may isolate and disconnect active material particles reducing capacity retention and battery life cycle. DRT analysis and XANES imaging show that both high temperature samples revealed a NiO x phase based on an increased diffusive impedance and a visible shift in the XANES spectra. The low cut-off voltage, high temperature sample showed a split peak and shift to lower energies indicating early formation of the NiO x phase. The diffusive impedance, which hinders intercalation and deintercalation, is driven by the formation of the NiO x phase. While primarily driven by cut-off voltage, elevated temperature also contributes to this degradation mechanism.

electrochemical impedance spectroscopy↗
DOE OSTI2021

Intrusion Detection for Cybersecurity of Power Electronics Dominated Grids: Inverters PQ Set-Points Manipulation

This work provides cybersecurity analytics for a high photovoltaic (PV) penetrated distribution network, representing future power electronics dominated grid (PEDG). Firstly, the impact of active and reactive power (PQ) set-points manipulation on the network is studied. Then, an intrusion detection system (IDS) is developed for identifying the potentially compromised PV inverters in the network. The proposed IDS is based on defining the normal, safe, and abnormal operation regions of the PV inverters from point of view of the steady state voltage stability of the network. These three-operation regions are identified by utilizing active power, reactive power, and voltage (PQV) limits of each specific grid-following inverter in the network. Each grid-following inverter's PQV contour includes the information of network topology, inverter ratings, and inverter controller. The developed PQ limits are integrated into the centralized secondary control layer for realization of the proposed IDS. Furthermore, the proposed secondary control layer is capable of providing remedial actions during an anomaly event to enhance the grid resiliency. The theoretical analyses are verified by several attack scenarios for a network of grid-following inverters.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

Erosion of focus rings in capacitively coupled plasma etching reactors

In plasma etching reactors, the structure surrounding the wafer, often called a focus ring (FR), plays an important role in maintaining uniform fluxes of reactants across the wafer. The FR is typically made of dielectric materials. During the plasma etching process, the sheath that forms over the wafer to accelerate ions anisotropically into the surface extends over the FR. Electrical charging of the FR modifies the sheath relative to that over the wafer. On the one hand, one wants the sheath to be uniform across the wafer-FR boundary to enable uniform fluxes to the edge of the wafer. On the other hand, maintaining a high voltage sheath over the FR will erode the FR, which is undesirable as the FR is a consumable component that must be periodically replaced in high volume manufacturing. In this work, we computationally investigated the consequences of dielectric constant ε of the FR materials on erosion of the FR. The series capacitance of the FR and its underlying structure is typically smaller than that of the wafer and its underlying structure. As a result, the FR charges quickly relative to the wafer, which then reduces the voltage across the sheath on top of the FR. The ion energy and angular distributions (IEADs) striking the FR are, therefore, generally lower in energy with a broader angular distribution. With ε = 2, the ion energies striking the middle to the outer edge of the FR are 30–180 eV, whereas for ε = 100, the ion energies are 120–380 eV. At the transition between the wafer and the FR, there is a skew in the IEAD as large as 15° that results from the difference in sheath thickness above the wafer and the FR. This skew and the erosion rate across the FR are functions of the dielectric constant of the FR material. With low ε, the FR charges quickly, less plasma is produced above the FR, and there is less voltage across the sheath that results in less FR erosion. Increasing ε of the FR produces a higher sheath voltage as well as higher ion fluxes over the FR, which increases erosion, while the skew at the edge of the wafer is less severe. Further, the material of the subsurface portion of the FR, which dominates its capacitance, is an important consideration in the design of the substrate assembly.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Housing Energy Connection Project (Final Technical Report)

This project expanded existing medium-voltage distribution to 33 households, a daycare, a mechanical shop, irrigation pumps, and a sewer lift station, all of which previously received electric service from the local electric utility. As part of the project, automatic meter reading (AMR) and advanced metering infrastructure (AMI) was installed to allow the Tribe to set up its own electric metering like a utility. The primary objective of this project was to expand the Tribe-owned electrical distribution to provide highly reliable electrical service to these existing loads. The objective was successfully met after project completion. The project reduced high costs for electric energy previously supplied by the utility, by supplanting utility-supplied electric power with Tribe-generated electric power. The project gave the Tribe greater independence from traditional power sources and provided jobs for the community.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Modular Electrochemical Synthesis Using a Redox Reservoir Paired with Independent Half-Reactions

Electrochemical synthesis of high-value chemicals using renewable electricity could lead to sustainability advantages over conventional chemical manufacturing. The tight coupling between paired anodic and cathodic reactions in conventional electrochemical processes, however, constrains the products and their efficiencies. Here, we demonstrate a strategy to achieve modular electrochemical synthesis (ModES) of different chemicals by decoupling and pairing the oxidative and reductive half-reactions with a heterogeneous redox reservoir (RR). Specifically, sodium nickel hexacyanoferrate (NaNiHCF) can serve as a robust and reversible RR that enables the modular production of several strong oxidants, hydrogen peroxide (H 2 O2) and sodium persulfate (Na 2 S 2 O 8 ) or active chlorine, in separate RR-coupled electrochemical processes. The system’s excellent performance and operational stability is demonstrated by continuous operation over 100 cycles (~36 h) to produce H 2 O 2 and Na 2 S 2 O 8 with a high voltage efficiency. The concept presented here highlights the prospects for using RRs to enable efficient, modular, and on-demand electrochemical synthesis of valuable chemicals.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

1.3-µm passively mode-locked quantum dot lasers epitaxially grown on silicon: gain properties and optical feedback stabilization

Abstract This work reports on an investigation of the optical feedback in an InAs/InGaAs passively mode-locked quantum dot (QD) laser epitaxially grown on silicon. Under the stably-resonant optical feedback condition, experiments demonstrate that the radio-frequency linewidth is narrowed whatever the bias voltage applied on the saturable absorber (SA) is; on the other hand, the effective linewidth enhancement factor of the device increases with the reverse bias voltage on the SA, hence it is observed that such an increase influences the mode-locking dynamic and the stability of device under optical feedback. This work gives insights for stabilizing epitaxial QD mode-locked lasers on silicon which is meaningful for their applications in future large-scale silicon electronic and photonic applications requiring low power consumption as well as for high-speed photonic analog-to-digital conversion, intrachip/interchip optical clock distribution and recovery.

Dong, Bozhang (ORCID:0000000158266723)↗
DOE OSTI2023

Hybrid Tandem Photovoltaics

Tandem solar cell structures are the only strategy demonstrated to surpass the detailed balance efficiency limit of high-quality single-junction solar cells. To continue to improve the efficiencies of cost-effective terrestrial solar power, hybrid tandems of dissimilar subcells are being considered by many around the world, especially designs that incorporate silicon solar cells as a bottom subcell. In this project, we studied a wide variety of tandem design possibilities including those with three-terminal (3T) and four-terminal (4T) configurations. The use of 3T and 4T designs could be useful for efficient and economical hybrid tandem designs that utilize the best available subcell materials such as emerging perovskite materials. Three-terminal configurations, in particular, have not been sufficiently studied previously. We have laid the foundational groundwork in this project for understanding the operation of 3T tandems: developing a taxonomy for naming, a methodology for measuring and interconnecting, and models for simply characterizing 3T tandems. Electrical and optical subcell coupling between the subcells was also measured and modeled. An important part of this work was the fabrication of novel example tandem structures, including 4T GaAs/Si, 3T GaInP/Si, 3T GaAs/Si, and 3T GaInP/GaAs devices. Using these high-quality tandem cells, we have been able to clearly demonstrate the achievability of high-efficiencies, and subtle physical effects such as photon recycling and luminescent coupling. We have developed and demonstrated essential building-block tools such as transparent conductive adhesives (TCA) and 3T silicon bottom cells with interdigitated back contacts (IBC) that can also be used in many other tandem designs. We have tested the reliability of these tools and devices under standardized testing and outdoor measurements. We have found 4T GaAs/Si tandems to be relatively straightforward to fabricate and robust in real-world outdoor conditions. While we have demonstrated working hybrid 3T III-V/TCA/Si IBC tandems, we experienced low yields even with our best process flows yet. Further work is still needed to improve the processing yield of these devices. We therefore also created tandem cells using an all-III-V 3T tandem process which was very robust with high yields, allowing for the creation of voltage-matched strings in many different configurations using 8 nearly identical 3T tandems. Using these robust 3T tandem examples, we were able measure and precisely characterize 3T tandem behaviors to predict their operation under changing spectrum and temperature. The optoelectronic equivalent-circuit model was shown to be very general and applicable to hybrid tandems, and encompassed the operation 3T Si IBC cells. This general model has been distributed to the public in as open-source Python-based software called PVcircuit. We have calculated the implications of these new tandem device designs on the real-world energy production and shown how the relative performance of different tandem configurations is situational and can be engineered using the tools developed here.

14 SOLAR ENERGY↗
DOE OSTI2025

ASEAN Technical Exchange Workshop for System Operators, Regulators, and Policymakers

This presentation provides an in-depth exploration of power system planning, cross-border electricity trading, and battery energy storage systems (BESS), offering actionable insights for system operators, regulators, and policymakers. The first section delves into power system planning and analysis, focusing on capacity expansion models and resource adequacy studies, including their role in optimizing system efficiency, managing emissions, and addressing system reliability risks. Key considerations, such as integration of transmission into generation planning and the forecasting versus optimization of customer distributed energy resources (DER) technologies, are explored. The session highlights critical trade-offs in spatial granularity and model runtimes, as well as the feasibility of aligning distribution investments with capacity expansion efforts. The second section examines cross-border electricity trading, with an emphasis on resource adequacy concepts such as reliability targets, loss of load expectation (LOLE), and planning reserve margins (PRM). Case studies on reserve market design and coordination across US regions provide insights into improving reserve deliverability and managing interregional power balance and congestion. This section also addresses market-to-market congestion management, including advanced strategies for high-voltage direct current (HVDC) optimization and ancillary service delivery. Finally, the presentation covers the rapid evolution of Battery Energy Storage Systems (BESS), highlighting their operational growth, regulatory frameworks, and use cases in grid flexibility, energy storage, and reliability. The discussion focuses on the benefits of BESS for system stability, resilience, and integration of renewable energy, offering insights into its role as a vital component in the transition toward a more sustainable and flexible grid. Key performance parameters, such as throughput, round-trip efficiency, and state of charge, are also examined.

25 ENERGY STORAGE↗
DOE OSTI2023

SPUTTERED THIN FILMS FOR VERY HIGH POWER, EFFICIENT, AND LOW-COST COMMERCIAL SOFCS

The aim of this project was to leverage the low area specific resistance (ASR) of Redox’s GDC electrolyte-based cell architecture and increase solid oxide fuel cell (SOFC) efficiency (i.e., open circuit voltage, or OCV) without significantly increasing cell resistance. The key to achieving the increased SOFC efficiency is the introduction of a thin sputtered yttria stabilized zirconia (YSZ) electron-blocking layer and a thin sputtered gadolinia doped ceria (GDC) barrier layer on top of the half-cell substrate (i.e., anode and GDC electrolyte). A key initial effort of the project was to improve the quality of the half-cell substrate surface so that any remaining defects were significantly smaller than the desired film thickness. During lab-scale trials, we had to overcome challenges with film cracking during post-sputtering treatments (e.g., thermal anneals) as well as damage to the sputtering targets. After the initial lab-scale trials, the focus shifted toward the use of commercial scale sputtering equipment with a sputtering equipment manufacturer in the microelectronics industry. Using the commercial sputtering equipment, we deposited films with different variations of power, PO2, sputtering time, platen speed, etc. We then determined the combinations of sputtering conditions and post-sputtering treatments that yielded high-quality films without cracks or other significant defects. While thin films were deposited on cells as large as 10 cm by 10 cm, the processing was optimized using 4 cm by 4 cm cells. Cell performance was evaluated in stainless-steel test fixtures between 500 °C and 700 °C with hydrogen fuel fed to the anode and air fed to the cathode. Extensive studies allowed us to determine that modified cathode and cathode contact firing processes were required to achieve theoretical OCV. Moreover, use of the new firing processes resulted in the need for a modified cathode contact to achieve a low ASR. In summary, the project demonstrated the performance of high OCV (1.13 V at 650 °C) from sputtered layers and a low ASR (~0.25 Ohms-cm2 at 650 °C) resulting from a modification of cathode/contact processing and the introduction of alternative contact layers that are sufficient to yield a Gen-1 cell with a maximum power density of approximately 1.2 W/cm2. At an operating voltage of 0.74 V, this would yield a cell power density of ~1.1 W/cm2. While not utilized in this project, a Redox Gen-2 cell has a catalyst-infiltrated porous anode that reduces the ASR by more than 50% from that of the Gen-1 cells used in this project. Therefore, if the sputtered YSZ electron-blocking layer and GDC barrier layer are added to a Gen-2 half cell with a similar increase in OCV to the theoretical value of ~1.13 V at 650 °C, and if the same improvement in ASR (from that demonstrated in this project) is achieved when using the Gen-2 half-cell architecture as a sputtered cell substrate, then the power density at 0.74 Vop could be as high as ~2.6 W/cm2. The impact of such power density gains, while still maintaining high cell efficiency, and thus high system efficiency, is a dramatic decrease in system cost because the stack represents ~30-40% of the SOFC system cost.

01 COAL, LIGNITE, AND PEAT↗
DOE OSTI2022

Load Margin Constrained Moving Target Defense against False Data Injection Attacks

Cyber physical security of power systems with high penetration of renewable generation has attracted attention from researchers. One critical issue is that cyber-physical attacks, disguised as uncertain renewable generation, can target conventional power system state estimation (SE). Moving target defense (MTD) is a promising defense strategy to detect stealthy false data injection (FDI) attacks against SE. However, all existing studies myopically perturb the reactance of transmission lines equipped with distributed flexible AC transmission system (D-FACTS) devices without adequately considering the system voltage stability. Exacerbated by the renewable generation uncertainty, existing MTD may cause voltage instability when the power grid is under stress. To address this issue, we propose a novel MTD framework that explicitly considers system voltage stability by using continuation power flow. We utilize the sensitivity matrix of power injection to line impedance, on which an optimization problem for maximizing load margin is formulated. This framework is validated on the IEEE 14-bus system and the IEEE 118-bus system, in which net load redistribution attacks are launched by sophisticated attackers. Steady-state simulations and dynamic simulations on PSS/E show the effectiveness of the proposed framework in circumventing the voltage instability while maintaining the detection effectiveness of MTD. The impact of the proposed method on attack detection effectiveness is also revealed.

Zhang, Hang↗
DOE OSTI2024

Lithiophilic CoF 2 @C hollow spheres towards spatial lithium deposition for stable lithium metal batteries

Lithium metal (LM) is a promising anode for next-generation batteries due to its high theoretical capacity and low electrode potential. Nonetheless, side reactions, volume change, and unwanted lithium dendrite growth seriously limit the practical application of LM. Herein, with the aid of a hard template approach, a novel lithiophilic CoF 2 -carbon hollow sphere (CoF 2 @C-HS) composite material is successfully prepared via a facile in-situ fluorination and etching strategy. The lithiophilic CoF 2 acts as nucleation sites to reduce nucleation overpotential as well as induces the spatial Li deposition and the formation of LiF-rich solid electrolyte interphase (SEI), and the hollow carbon matrix can enhance the electrical conductivity and offer free space for LM deposition. Theoretical simulations reveal that the synergistic effect of lithiophilic CoF 2 and hollow carbon matrix homogenizes the electric field distribution and Li + flux. Benefiting from these advantages, the CoF 2 @C-HS-modified copper substrate electrode delivers an enhanced Coulombic efficiency (CE) of 93.7% for 280 cycles at 1 mA cm –2 and 1 mA h cm –2 . The symmetrical cell using CoF 2 @C-HS can stably cycle more than 1800 h with a low voltage hysteresis of 11 mV at a current density of 0.5 mA cm –2 and an areal capacity of 0.5 mA h cm –2 . Moreover, the Li@CoF 2 @C-HS composite anode enables more than 300 stable cycles at 1 C with a capacity retention of 95% in LiFePO 4 -based full cell and 110 stable cycles at 1 C in LiNi 0.8 Co 0.1 Mn 0.1 O 2 (NCM811)-based high-voltage full cell. Finally, this work might shed a new light on designing lithiophilic hosts to spatially confine LM deposition, realizing dendrite-free LM anodes and the practical applications of LM batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Effective Selective Area Doping for GaN Vertical Power Transistors Enabled by Innovative Materials Engineering

GaN vertical power transistors have emerged as promising candidates for future high efficiency high power electronic applications, with the potential to outperform conventional GaN lateral power devices in terms of power, breakdown, and avalanche characteristics. However, the development of current GaN vertical power transistors is seriously hindered by the poor materials performance of selective area doped p-n junctions. A mechanistic understanding of these fundamental materials issues is essential in order to achieve high performance selective area doped p-n junctions and consequently to advance the GaN vertical power transistor technology. To address this challenge, we carried out a comprehensive research program that advance fundamental knowledge in the selective area doping for GaN materials, and which will lead to the development of high performance GaN vertical power transistors. First, we developed innovative fabrication processes, including novel surface etching, surface passivation, and metalorganic chemical vapor deposition (MOCVD) growth, which provided enhanced opportunities for solving the unique challenges of selective area doping in GaN materials. Second, we performed a fundamental materials study using powerful characterization methods including transmission electron microscopy (TEM), ultraviolet (UV-), x-ray and angle-resolved photoelectron spectroscopy (UPS/XPS/ARPES), electron holography, and cathodoluminescence (CL); Third, we investigated several related issues, including Mg incorporation, polarization effects in carrier transport, and non-ideal material effects, which have rarely been explored so far. At the end of this project, we successfully demonstrated (1) fundamental understanding of selective area etching, regrowth, and doping of GaN, and associated knowledge on defects, interface, and breakdown properties. (2) Effective etch and regrowth processing recipes to achieve etch/regrowth GaN p-n diodes with very low leakage of 3.5 nA at 600 V, which meets the ARPA-E target. (2) High performance vertical GaN p-n didoes and vertical junction termination extension (JTE) devices with breakdown voltage of ~ 2 kV, and breakdown electric field of ~ 3.5 MV/cm, which are close to the performance limit of GaN. The successful outcome has resulted in new fundamental understandings in the selective area doping and regrowth process for GaN, which will lead to groundbreaking GaN vertical transistors for high performance next generation power electronics.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

EVSE Cybersecurity and Resilience

Consequence-driven Cybersecurity Analysis for Extreme Fast Charging Electric Vehicle Infrastructure Electric vehicle (EV) development and associated charging infrastructure are expected to advance rapidly. Thirty percent of all global vehicle sales may be EVs and hybrid EVs by 2025, and they will rely on increasingly sophisticated strategies for grid integration. Next-generation EV charging infrastructure is expected to include interconnected renewable resources, such as photovoltaic (PV) arrays and battery storage systems, along with grid-edge devices. Although distributed energy resources (DERs) are useful in several ways, such as peak shaving at high demand times and backup supply for added resilience, the integration of vehicle charging and DERs could create more avenues for cyberattack. Physical and/or remote access to EV charging station components, including charge ports, power electronics, controllers, and local generation (e.g., PV and energy storage) could be paths to cause power fluctuations, leading to altered operations at the charging station, escalated privileges to administrative systems, exfiltration of financial information (including personally identifiable information), and reduced grid stability. One compromised EV supply equipment component can open the door to a variety of exploitable vulnerabilities. Cloud computing and mobile application control have the potential to expand the threat surface to non-repudiation and firmware integrity challenges. Vendor clouds have access to hundreds of chargers, and if compromised, can scale the attack surface exponentially. The high power and voltage levels of xFC infrastructure (e.g., 400 kW at 1000- V DC) increase the hazards and ability to impact the grid and vehicles more than lower-power charging systems. Legacy communications systems and protocols could also put EV infrastructure at risk of cyberattacks requiring a robust patch management process. Communications networks link EVs and chargers to several stakeholders - including charging station operators, grid operators, vendors/manufacturers, and aggregators - who have both physical and network access to share information for control, monitoring, and analytics. Information in these networks that is vulnerable to compromise includes the state of charge, charging duration, payment information, electricity price, and load control. Analyzing and prioritizing these interconnections risks could help address cybersecurity related to data leakage and manipulation.

charging↗
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2022

7.2 kV Three-Port SiC Single-Stage Current-Source Solid-State Transformer With 90 kV Lightning Protection

This article proposes a multiport modular single-stage current-source solid-state transformer (SST) for applications like photovoltaic, energy storage integration, electric vehicle fast charging, data center, etc. The 7.2 kV 50 kVA current-source SST consists of five input-series output-parallel modules, each based on 3.3 kV SiC reverse-blocking MOSFET-plus-diode modules. The proposed SST has some unique features. First, compared to the voltage-source or matrix converter-based SSTs, the current-source SST has a unique advantage of single-stage isolated AC/DC or AC/AC conversion with an inductive DC link, but no medium-voltage (MV) AC experiments have been reported. This article for the first time demonstrates MV AC current-source SST up to 7.5 kV peak. Second, the multiport SST has a buffer port for active power decoupling (APD) or energy storage integration. The double-line-frequency power ripple from single-phase AC grid normally results in a large capacitor size in MV SSTs. The APD scheme is proposed in MV applications for the first time to enable a reduced DC link and the electrolytic capacitor-less SST with high reliability. Third, as a direct grid-connected converter without line-frequency transformer, insulation and protection are critical. A medium-frequency transformer design passes 55 kV basic-insulation level (BIL) and 60 kV high potential dielectrics withstand test with only 0.09% leakage inductance. Importantly, a lightning protection scheme is presented to protect the SST itself from 90 kV BIL impulse. Fourth, the proposed current-source SST topology is a modular soft-switching solid-state transformer (M-S4T) with full-range zero-voltage switching and controlled dv/dt for low electromagnetic interference. Furthermore, these concepts are verified in a three-port M-S4T prototype with forced oil cooling under single-module, stacked-module, steady-state, and dynamic operations.

14 SOLAR ENERGY↗