Total Ionizing Dose Effects on Gallium Oxide MOSFETs
This summary will be submitted for review for the 2025 HEART conference.
Smith, Michael Brandon [Sandia National Laboratori↗
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A neutron fluence map of the Los Alamos National Laboratory Godiva IV critical assembly
A neutron fluence map and a total ionizing dose map of the Los Alamos National Laboratory Godiva IV fast burst critical assembly was generated using passive reactor dosimetry, comprised of sulfur pellets and thermoluminescent dosimeters. Godiva IV is an unmoderated, fast burst, critical assembly constructed of approximately 65 kg of highly enriched uranium fuel alloyed with 1.5 % molybdenum for strength. The mapping was performed during a single 75.6 ºC temperature rise burst operation, with the top and sides of the cylindrical Godiva-IV Top Hat covered in passive dosimetry. Dosimetry was placed in a symmetric pattern around the Top Hat, with higher concentrations near the control rods and burst rod. A specific portion of the lower quadrant of the burst rod was mapped to confirm a testing region where the neutron fluence varied by no more than ± 5%. The results will be used to assess the neutron, gamma, and total ionizing dose environment in three-dimensional space around the assembly for higher fidelity experiment placement, active dosimetry positioning, and radiation field characterization.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Calibration and Initial Results of Space Radiation Dosimetry Using the iMESA-R
The integrated Miniaturized Electrostatic Analyzer-Reflight (iMESA-R) is a space weather instrument designed to measure plasma density, temperature, and spacecraft charging, along with total ionizing dose and dose rate. A constellation consisting of five nearly identical instruments has been designed and developed to act as science payloads hosted on-board Department of Defense satellites operating in low-Earth orbit. To validate the dosimetry component of the iMESA-R, a radiation test study was performed to calibrate the dosimeter and ascertain the attenuation due to the instrument aluminum housing. An 80 curie Cobalt-60 radioisotope source emitting beta, X-ray, and gamma ray radiation decay products was used to calibrate the dosimeter response as a function of distance and instrument shielding. We present results of the calibration study along with initial on-orbit data presented from the first operational iMESA-R hosted on-board Space Test Program Satellite 5 in a polar Earth orbit. The initial on-orbit data demonstrate the ability to map the radiation environment, particularly the South Atlantic Anomaly and the auroral regions using total ionizing dose rate due to electrons of E > 1.5 MeV and protons of E > 25 MeV.
79 ASTRONOMY AND ASTROPHYSICS↗
Response of Integrated Silicon Microwave pin Diodes to X-ray and Fast-Neutron Irradiation
Here, integrated silicon microwave pin diodes are exposed to 10-keV X-rays up to a dose of 2 Mrad(SiO 2 ) and 14-MeV fast neutrons up to a fluence of 2.2×10 13 cm -2 . Changes in both DC leakage current and small-signal circuit components are examined. Degradation in performance due to total-ionizing dose is shown to be suppressed by non-quasi-static effects during RF operation. Tolerance to displacement damage from fast neutrons is also observed, which is explained using TCAD simulations. Overall, the characterized pin diodes are tolerant to cumulative radiation at levels consistent with space applications such as geosynchronous weather satellites.
42 ENGINEERING↗
Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad
According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology
This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.
42 ENGINEERING↗
Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams
Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.
MOSFET↗
Effect of Gamma Radiation on TaOₓ ECRAM
Electrochemical random access memory (ECRAM) is an emerging three-terminal nonvolatile memory (NVM) with highly controllable channel conductance which is promising for use as an analog memory (or synapse) in analog in-memory computing (IMC) systems. Energy-efficient analog IMC computing is particularly desirable for power-constrained, high-radiation environments such as satellites. However, little is known about the suitability of ECRAM for use in a total ionizing dose (TID) environment. Here, this work investigates the effect of Co-60 gamma radiation on the channel conductance and noise—two properties critical for analog IMC systems—of a TaO x -based ECRAM up to 17.3 Mrad(SiO 2 ) for both low- and high-channel-conductance state devices. A transient increase in conductance is observed in response to radiation which consists of two elements: an immediate increase in conductivity due to photocurrent and a secondary increase in conductivity, which has a slower rise and saturation and can persist for hours after exposure. This secondary, persistent photoconductivity is attributed to charging caused by hole trapping. These transient effects would not likely occur in a space environment due to the low dose rate compared with this experiment. No permanent change is found in the low conductance state (LCS) following exposure and the minor shift in the high conductance change would be less significant than the regular retention decay in this state. A permanent increase in the random telegraph noise is observed, possibly due to increased traps created in the channel. This work demonstrates that TaO x -based ECRAM is suitable for use in spaceborne analog IMC systems that are subject to significant TID.
ECRAM↗
Impact of 12-nm FinFET Technology Variations on TID Effects: A Comparative Study of GF 12LP and 12LP+ at the Transistor Level
Here, this article presents a comparative analysis of total ionizing dose (TID) response in GlobalFoundries’ (GF) 12 low-power (LP) and 12LP+12-nm bulk fin field effect transistor (FinFET) technologies using 10-keV X-rays. Our findings show that 12LP+ n-type transistors demonstrate higher sensitivity to TID degradation of the off-state leakage drain current compared to 12LP. Data indicate that for both 12LP and 12LP+, transistors with higher threshold voltages (VTs) exhibit lower off-state drain-source leakage postirradiation compared to transistors with lower VTs. Data consistently show that transistors with fewer fins per transistor show superior TID tolerance, in both 12LP and 12LP+ technologies. Lower VT transistors in both technologies display similar preirradiation leakage currents. On the other hand, higher VT transistors in 12LP+ show lower preirradiation leakage currents than those in 12LP, highlighting that the front-end-of-line of 12LP+ technology has been modified compared to 12LP. p-type devices in 12LP+ presented negligible degradation. Larger TID sensitivity in 12LP+ might be attributed to the implementation of dual-metal gate work functions, reduced halo doping, deeper source/drain (S/D) doping profiles, and/or 12LP+ having narrower fins compared to 12LP.
Dual-metal gate work functions↗
Ionizing radiation effects in SONOS-based neuromorphic inference accelerators
Here, we evaluate the sensitivity of neuromorphic inference accelerators based on Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) charge trap memory arrays to total ionizing dose (TID) effects. Data retention statistics were collected for 16 Mbit of 40 nm SONOS digital memory exposed to ionizing radiation from a Co-60 source, showing good retention of the bits up to the maximum dose of 500 krad(Si). Using this data, we formulate a rate-equation-based model for the TID response of trapped charge carriers in the ONO stack, and predict the effect of TID on intermediate device states between ‘program’ and ‘erase’. This model is then used to simulate arrays of low-power, analog SONOS devices that store 8-bit neural network weights and support in situ matrix-vector multiplication. We evaluate the accuracy of the irradiated SONOS-based inference accelerator on two image recognition tasks – CIFAR-10 and the challenging ImageNet dataset – using state-of-the-art convolutional neural networks, such as ResNet-50. We find that across the datasets and neural networks evaluated, the accelerator tolerates a maximum TID between 10 krad(Si) and 100 krad(Si), with deeper networks being more susceptible to accuracy losses due to TID.
43 PARTICLE ACCELERATORS↗
A 100-Mrad (Si) JFET-based Sensing and Communications System for Extreme Nuclear Instrumentation Environments
Dry cask storage is one of two storage methods approved by the U.S. Nuclear Regulatory Commission for spent fuel after removal from reactor cores. Dry casks consist of a stainless steel canister enclosed in a concrete overpack to contain the hazardous radioactive spent fuel rods and provide radiation shielding. Monitoring spent fuel storage casks is desired to ensure the safe containment of the enclosed spent fuel, but is very difficult due to the related harsh temperature and radiation environment. The sensors and associated electronics to monitor temperature, pressure, and/or radiation need to survive high temperatures and radiation doses for extended time periods. For this reason, there is a severe need for radiation-hardened electrical systems that survive well beyond the existing capabilities of commercially available radiation-rated electronic components, which have primarily been developed for space applications. Junction-gate field-effect transistor (JFET) devices are inherently radiation hardened [exceeding 100 Mrad (Si)]. Additionally, when JFETs are used as building blocks for sensing and communication electronics (i.e., oscillators, amplifiers, filters, and mixers), inherently radiation-hardened circuits can be achieved. To this end, JFET-based radiation-hardened electronics interfacing with cask-embedded sensors capable of driving modulated sensor signals through a stainless steel barrier were designed and tested at a dose rate of approximately 500 krad/h (Si) to beyond a 200-Mrad (Si) total ionizing dose. After 200 Mrad (Si), the sensor and communication circuit signals were correctly decoded at the receiver despite oscillator drift. The results from this experiment demonstrate the potential for creating more complex radiation-hardened JFET-based electrical systems for nuclear environments.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET
We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.
COTS↗
Performance evaluation of pulse shape discrimination capable organic scintillators for space applications
Scintillators with pulse-shape discrimination (PSD) capability are of great interest to many fields in the scientific community. The ability to discern a gamma ray from a neutron using PSD varies between different types of scintillator materials and dopants. Here a new generation of organic scintillator materials with PSD capability were studied to determine their radiation hardness to neutron and gamma-ray radiation. The PSD capability, average pulse shapes, and light output of four types of organic scintillator were characterized before and after neutron and gamma-ray irradiation. The main goal of this investigation is to study the effects of long-term irradiation that may be experienced in space applications on the light output and particle discriminating capabilities of each material. EJ-270, EJ-276, organic glass, and Stilbene were tested. Damage due to neutron irradiation (displacement damage) was not observed in any of the scintillators up to 2.56 x 10 11 n/cm 2 , except for Stilbene which showed a small (12%) decrease in light output. All scintillators presented some light output reduction after gamma-ray irradiation (total ionizing dose), with reductions of 17% (EJ-276 and OGS), 32% (EJ-270), and 42% (Stilbene) observed immediately after 100 kRad.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Gamma Radiation Effects in Amorphous and Crystalline Polyaryletherketones
This work investigates the effect of gamma radiation on chain scission and crosslinking in polyaryletherketone (PAEK) thermoplastic filaments, namely, polyetheretherketone (PEEK) and polyetherketoneketone (PEKK) that is either semicrystalline (PEKK-c) or highly amorphous (PEKK-a). The PAEK thermoplastic filaments were exposed to total ionizing doses (TID) of gamma radiation from 1 to 8 MGy in the Gamma Irradiation Facility at Sandia National Laboratories. A combination of thermal and FT-IR spectral analysis of the irradiated specimens was used to study the chain scission and crosslinking behavior between PEEK, PEKK-c, and PEKK-a. Crystallinity decreased with increased TID and melt enthalpy decreased. Despite clear indications of changes to melt and crystallization behavior, any change to the glass-transition temperature was minor until a post-irradiation thermal annealing occurred, which caused an increase in crystallinity. Gamma radiation impacted PEKK-a more due to the lower degree of initial crystallinity, where a reduction in melt enthalpy, crystallinity, and crystallization kinetics was observed. Despite these effects, the ability to achieve a higher degree of crystallization (X c < 20%) by annealing was not affected. The results presented here provide important insight into the performance of a class of commercialized PEKK thermoplastics exposed to a harsh radiation environment.
Crystallinity↗
Evidence for ionization damage in mid-wave infrared nBn detectors
The effects of 63 MeV proton and 60Co gamma irradiation on the operation of 4.3 μm cutoff nBn photodetectors are demonstrated separately, and both are shown to yield a total ionizing dose (TID) effect. The effect is shown here in an InAsSbBi nBn detector and has been observed in other bulk alloy nBn detectors, and is unusual as it is notably absent in superlattice nBn detectors. The non-antireflection coated detectors exhibit a pre-radiation quantum efficiency of 17% at 3.3 μm wavelength and a dark current density of 50 μA/cm2, or roughly 300× the Rule 07 expectation, at their ideal operating voltage of −0.4 V bias at 150 K. Step-wise proton irradiation and in situ measurement indicate that the dark current increases to about 400× Rule 07 at the highest proton dose level of 150 krad(Si) (9.10 × 1011 p+/cm2), while the quantum efficiency is degraded at a relatively faster rate than the majority of analogous detectors characterized by our lab. Both the photocurrent and dark current are also shown to exhibit a turn-on voltage magnitude reduction of 100 mV following either gamma or proton irradiation, a trend which is attributable to negative trapped charge at the barrier interface (TID effect). This theory is further supported by an observed capacitance density magnitude reduction with dose and affirmed with Silvaco TCAD simulations. Following both proton exposure and subsequent anneal and gamma exposure and subsequent anneal; dark current, photocurrent, and CV all approach their pre-radiation baseline values.
Physics↗
A radiation tolerant clock generator for the CMS endcap timing layer readout chip
Here, we present the test results of a low jitter Phase Locked Loop (PLL) prototype chip for the CMS Endcap Timing Layer readout chip (ETROC). This chip is based on the improved version of a clock synthesis circuit named ljCDR from the Low Power Gigabit Transceiver (lpGBT) project. The ljCDR is tested in its PLL mode. An automatic frequency calibration (AFC) block with the Triple Modular Redundancy (TMR) register is developed for the LC-oscillator calibration. The chip was manufactured in a 65 nm CMOS process with 10 metal layers. The chip has been extensively tested, including Total Ionizing Dose (TID) testing up to 300 Mrad and Single Event Upset (SEU) testing with heavy ions possessing a Linear Energy Transfer (LET) from 1.3 to 62.5 MeV × cm 2 /mg.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Development and construction status of the Mu2e electromagnetic calorimeter mechanical structures
Abstract The Mu2e experiment at Fermilab will search for the CLFV neutrino-less coherent conversion of a muon into an electron in the field of an aluminum nucleus. The observation of this process would be the evidence of physics beyond the Standard Model. Mu2e comprises a straw-tracker, an electromagnetic calorimeter and an external veto for cosmic rays. The calorimeter provides electron identification, a fast trigger and aids track reconstruction. It is a state-of-the-art crystal calorimeter and employs 1340 pure CsI crystals readout by UV-extended SiPM and fast electronics. The design consists of two identical annular disks positioned at the relative distance of 70 cm downstream the target.The hostile Mu2e conditions (total ionizing dose of 12 krad and a neutron fluence of 5 × 10 10 n/cm 2 @ 1 MeVeq (Si)/y, 1 T magnetic field and vacuum level of 10 −4 Torr) posed tight constraints on the mechanical structures and materials choice. The support structure of the two crystal matrices employs two aluminum hollow rings and parts made of open-cell vacuum-compatible carbon fiber. SiPMs and front-end electronics for each crystal are assembled in one mechanical unit inserted in a machined copper holder. The units are supported by a plate made of vacuum-compatible material. The plate integrates the cooling system made of a network of copper lines flowing a low temperature fluid and placed in thermal contact with the copper holders. The DAQ is hosted in aluminum crates positioned on the lateral surface of the disks. The crates also integrate the DAQ electronics cooling system. We review the constraints on the calorimeter structures design, the development of all the structural components, including the simulations that have determined the materials and technological choices and the specifications of the cooling station, components production and quality assurance tests, the procedures for detector assembly, transportation and installation in the experimental area.
Instruments & Instrumentation↗
Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation
In this paper, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. We discuss the possible application of our findings for the radiation-tolerant smart memory controller design.
3-D NAND flash↗