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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Neutron irradiation and electrical characterisation of the first 8” silicon pad sensor prototypes for the CMS calorimeter endcap upgrade

As part of its HL-LHC upgrade program, the CMS collaboration is replacing its existing endcap calorimeters with a high-granularity calorimeter (CE). The new calorimeter is a sampling calorimeter with unprecedented transverse and longitudinal readout for both electromagnetic and hadronic compartments. Due to its compactness, intrinsic time resolution, and radiation hardness, silicon has been chosen as active material for the regions exposed to higher radiation levels. The silicon sensors are fabricated as 20 cm (8”) wide hexagonal wafers and are segmented into several hundred pads which are read out individually. As part of the sensor qualification strategy, 8” sensor irradiation with neutrons has been conducted at the Rhode Island Nuclear Science Center (RINSC) and followed by their electrical characterisation in 2020-21. The completion of this important milestone in the CE's R&D program is documented in this paper and it provides detailed account of the associated infrastructure and procedures.The results on the electrical properties of the irradiated CE silicon sensors are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1997

SiC-Based Schottky Diode Gas Sensors

Silicon carbide based Schottky diode gas sensors are being developed for high temperature applications such as emission measurements. Two different types of gas sensitive diodes will be discussed in this paper. By varying the structure of the diode, one can affect the diode stability as well as the diode sensitivity to various gases. It is concluded that the ability of SiC to operate as a high temperature semiconductor significantly enhances the versatility of the Schottky diode gas sensing structure and will potentially allow the fabrication of a SiC-based gas sensor arrays for versatile high temperature gas sensing applications.

Hunter, Gary W.↗
DOE OSTI2020

Charge collection study with the ATLAS ITk prototype silicon strip sensors ATLAS17LS

The inner tracker of the ATLAS detector is scheduled to be replaced by a completely new silicon-based inner tracker (ITk) for the Phase-II of the CERN LHC (HL-LHC). The silicon strip detector covers the volume 40 < R < 100 cm in the radial and | z | < 300 cm in the longitudinal directions. The silicon sensors for the detector will be fabricated using the n + -on-p 6-inch wafer technology, for a total of 22,000 wafers. Here, intensive studies were carried out on the final prototype sensors ATLAS17LS fabricated by Hamamatsu Photonics (HPK). The charge collection properties were examined using penetrating 90 Sr β -rays and the ALIBAVA fast readout system for the miniature sensors of 1 cm × 1 cm in area. The samples were irradiated by protons in the 27 MeV Birmingham Cyclotron, the 70 MeV CYRIC at Tohoku University, and the 24 GeV CERN-PS, and by neutrons at Ljubljana TRIGA reactor for fluence values up to 2 × 10 15 n eq /cm 2 . The change in the charge collection with fluence was found to be similar to the previous prototype ATLAS12, and acceptable for the ITk. Sensors with two active thicknesses, 300 μ m (standard) and 240 μ m (thin), were compared and the difference in the charge collection was observed to be small for bias voltages up to 500 V. Some samples were also irradiated with gamma radiation up to 2 MGy, and the full depletion voltage was found to decrease with the dose. This was caused by the Compton electrons due to the 60 Co gamma radiation. To summarize, the design of the ATLAS17LS and technology for its fabrication have been verified for implementation in the ITk. We are in the stage of sensor pre-production with the first sensors already delivered in January of 2020.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2002

Directionally Sensitive Silicon Radiation Sensor (VCELL)

Sensors are a mission critical element in many NASA programs and require some very unique properties such as small size, low power, high reliability, low weight. Low cost sensors offer the possibility of technology transfer to the public domain for commercial applications. One sensor application that is important to many NASA programs is the ability to point at a radiation source, such as the sun. Such sensors may be an integral part of the guidance and control systems in space platforms and in remote exploratory vehicles. Sun/solar pointing is also important for ground-based systems such as solar arrays. These systems are not required to be small and lightweight. However, if a sensor with a sun pointing capability was developed that is very small, rugged, lightweight and at the same time low cost, it certainly could be used in existing and perhaps many new ground based applications. The objective of the VCELL (Directionally Sensitive Silicon Radiation Sensor) research is to develop a new and very unique silicon based directionally sensitive radiation sensor which can be fabricated using conventional monolithic IC technologies and which will meet the above requirements. The proposed sensor is a novel silicon chip that is directionally sensitive to incident radiation, providing azimuth and elevation information on the incident radiation. The resulting sensor chip will be appropriate for integration into a silicon IC or useful in a hybrid structure to be interfaced with a standard IEEE 1451 bus interface IC to create an Intelligent Sensor. It is presently estimated that it will require about three man-years of effort to complete the VCELL research and development. This includes the optical, electrical, mechanical and silicon fabrication and testing as well as computer simulations and theoretical analysis and modeling including testing in simulated space environments. This report summarizes the sensor research completed this summer as part of the Summer Faculty Fellowship Program. The primary effort was focused on activity necessary to fabricate prototype sensor.

Koy B. Cook↗
NASA NTRS1989

Piezoresistive silicon pressure sensors in cryogenic environment

This paper presents data on low-temperature measurements of silicon pressure sensors. It was found that both the piezoresistance coefficients and the charge-carrier mobility increase with decreasing temperature. For lightly doped semiconductor materials, the density of free charge carriers decreases with temperature and can freeze out eventually. However, the effect of carrier freeze-out can be minimized by increasing the impurity content to higher levels, at which the temperature dependency of piezoresistance coefficients is reduced. An impurity density of 1 x 10 to the 19th/cu cm was found to be optimal for cryogenic applications of pressure sensor dies.

Kahng, Seun K.↗
NASA NTRS2007

Silicon Carbide Sensors and Electronics for Harsh Environment Applications

Silicon carbide (SiC) semiconductor has been studied for electronic and sensing applications in extreme environment (high temperature, extreme vibration, harsh chemical media, and high radiation) that is beyond the capability of conventional semiconductors such as silicon. This is due to its near inert chemistry, superior thermomechanical and electronic properties that include high breakdown voltage and wide bandgap. An overview of SiC sensors and electronics work ongoing at NASA Glenn Research Center (NASA GRC) will be presented. The main focus will be two technologies currently being investigated: 1) harsh environment SiC pressure transducers and 2) high temperature SiC electronics. Work highlighted will include the design, fabrication, and application of SiC sensors and electronics, with recent advancements in state-of-the-art discussed as well. These combined technologies are studied for the goal of developing advanced capabilities for measurement and control of aeropropulsion systems, as well as enhancing tools for exploration systems.

Evans, Laura J.↗
NASA NTRS1980

A high frequency silicon pressure sensor

Theoretical and design considerations as well as fabrication and experimental work involved in the development of high-frequency silicon pressure sensors with an ultra-small diaphragm are discussed. A sensor is presented with a rectangular diaphragm of 0.0127 cm x 0.0254 cm x 1.06 micron; the sensor has a natural frequency of 625 kHz and a sensitivity of 0.82 mv/v-psi. High-frequency results from shock tube testing and low-frequency (less than 50 kHz) comparison with microphones are given.

Kahng, S. K.↗
NASA NTRS1995

Silicon Micromachined Sensor for Broadband Vibration Analysis

The development of a family of silicon based integrated vibration sensors capable of sensing mechanical resonances over a broad range of frequencies with minimal signal processing requirements is presented. Two basic general embodiments of the concept were designed and fabricated. The first design was structured around an array of cantilever beams and fabricated using the ARPA sponsored multi-user MEMS processing system (MUMPS) process at the Microelectronics Center of North Carolina (MCNC). As part of the design process for this first sensor, a comprehensive finite elements analysis of the resonant modes and stress distribution was performed using PATRAN. The dependence of strain distribution and resonant frequency response as a function of Young's modulus in the Poly-Si structural material was studied. Analytical models were also studied. In-house experimental characterization using optical interferometry techniques were performed under controlled low pressure conditions. A second design, intended to operate in a non-resonant mode and capable of broadband frequency response, was proposed and developed around the concept of a cantilever beam integrated with a feedback control loop to produce a null mode vibration sensor. A proprietary process was used to integrat a metal-oxide semiconductor (MOS) sensing device, with actuators and a cantilever beam, as part of a compatible process. Both devices, once incorporated as part of multifunction data acquisition and telemetry systems will constitute a useful system for NASA launch vibration monitoring operations. Satellite and other space structures can benefit from the sensor for mechanical condition monitoring functions.

Gutierrez, Adolfo↗
NASA NTRS2022

Silicon Carbide Sensors and Electronics Technology for Extreme Environments: Opportunities for Nuclear Power Applications

Over the past five decades, NASA Glenn Research Center had been advancing the development of single crystal silicon carbide growth, sensors and electronics device technologies, culminating in the recent demonstration of Micro-Electro-Mechanical Systems scale batch fabricated pressure sensors operating at 800 °C and integrated circuit electronics with demonstrated durability of over 1000 hours at 500 °C. As a result of the progress made in demonstrating the high temperature capability of the technology, insertion into actual operational environments, such as in jet engines and planet Venus, are in progress. The high temperature, near inert surface chemistry, and radiation hardness attributes of SiC, coupled with the relative maturation of the device batch microfabrication, contact metallization, and packaging technologies, make the material a prime candidate for use as part of future advanced nuclear reactor instrumentation and control strategy. Hence the current research efforts at NASA Glenn are aimed toward harnessing these attributes in developing SiC sensors and electronics for nuclear reactor applications, potentially for future Lunar/Martian nuclear power and the emerging terrestrial micro nuclear power plants.

silicon carbide↗
DOE OSTI2020

Design and performance of silicon strip sensors with slim edges for HPS experiment

In this paper, we report on design and performance of new strip sensors for the Heavy Photon Search (HPS) experiment. The sensors feature a slim edge implementation using the Scribe–Cleave–Passivate (SCP) method. The slim edge design has allowed the introduction of a new layer closer to the target, which increased the tracking acceptance and vertex precision, improving physics reach of the experiment. We describe the production, testing, and operational experience with the new sensors.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1992

Using silicon diodes for detecting the liquid-vapor interface in hydrogen

Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition form vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.

Dempsey, Paula J.↗
NASA NTRS1992

Using silicon diodes for detecting the liquid-vapor interface in hydrogen

Tests were performed using commercially available silicon diode temperature sensors to detect the location of the liquid-vapor interface in hydrogen during ground test programs. Results show that by increasing the current into the sensor, silicon diodes can be used as liquid level point sensors. After cycling the sensors from liquid to vapor several times, it was found that with a 30 mA (milliamps) input current, the sensors respond within 2 seconds by measuring a large voltage difference when transitioning from liquid to vapor across the interface. Nearly instantaneous response resulted during a transition from vapor to liquid. Detailed here are test procedures, experimental results, and guidelines for applying this information to other test facilities.

Dempsey, Paula J.↗
DOE OSTI2023

Evaluation of HPK n + - p planar pixel sensors for the CMS Phase-2 upgrade

To cope with the challenging environment of the planned high luminosity upgrade of the Large Hadron Collider (HL-LHC), scheduled to start operation in 2029, CMS will replace its entire tracking system. The requirements for the tracker are largely determined by the long operation time of 10 years with an instantaneous peak luminosity of up to 7.5 × 10 34 cm –2 s –1 in the ultimate performance scenario. Depending on the radial distance from the interaction point, the silicon sensors will receive a particle fluence corresponding to a non-ionizing energy loss of up to $\Phi_{\text {eq}}$ = 3.5 × 10 16 cm –2 . Here this paper focuses on planar pixel sensor design and qualification up to a fluence of $\Phi_{\text {eq}}$ = 1.4 × 10 16 cm –2 . For the development of appropriate planar pixel sensors an R&D program was initiated, which includes $n^+ -p$ sensors on 150 mm (6”) wafers with an active thickness of 150 μm with pixel sizes of 100 × 25 μm 2 and 50 × 50 μm 2 manufactured by Hamamatsu. Single chip modules with ROC4Sens and RD53A readout chips were made. Irradiation with protons and neutrons, as well was an extensive test beam campaign at DESY were carried out. This paper presents the investigation of various assemblies mainly with ROC4Sens readout chips. It demonstrates that multiple designs fulfill the requirements in terms of breakdown voltage, leakage current and efficiency. The single point resolution for 50 × 50 μm 2 pixels is measured as 4.0 μm for non-irradiated samples, and 6.3 μm after irradiation to $\Phi_{\text {eq}}$ = 7.2 × 10 15 cm –2 .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1999

Application of real-time radiation dosimetry using a new silicon LET sensor

A new type of real-time radiation monitoring device, RRMD-III, consisting of three double-sided silicon strip detectors (DSSDs), has been developed and tested on-board the Space Shuttle mission STS-84. The test succeeded in measuring the linear energy transfer (LET) distribution over the range of 0.2 keV/micrometer to 600 keV/micrometer for 178 h. The Shuttle cruised at an altitude of 300 to 400 km and an inclination angle of 51.6 degrees for 221.3 h, which is equivalent to the International Space Station orbit. The LET distribution obtained for particles was investigated by separating it into galactic cosmic ray (GCR) particles and trapped particles in the South Atlantic Anomaly (SAA) region. The result shows that the contribution in dose-equivalent due to GCR particles is almost equal to that from trapped particles. The total absorbed dose rate during the mission was 0.611 mGy/day; the effective quality factor, 1.64; and the dose equivalent rate, 0.998 mSv/day. The average absorbed dose rates are 0.158 mGy/min for GCR particles and 3.67 mGy/min for trapped particles. The effective quality factors are 2.48 for GCR particles and 1.19 for trapped particles. The absorbed doses obtained by the RRMD-III and a conventional method using TLD (Mg(2)SiO(4)), which was placed around the RRMD-III were compared. It was found that the TLDs showed a lower efficiency, just 58% of absorbed dose registered by the RRMD-III.

NASA Discipline Radiation Health↗
DOE OSTI2023

Performance of the CMS High Granularity Calorimeter prototype to charged pion beams of 20–300 GeV/c

The upgrade of the CMS experiment for the high luminosity operation of the LHC comprises the replacement of the current endcap calorimeter by a high granularity sampling calorimeter (HGCAL). The electromagnetic section of the HGCAL is based on silicon sensors interspersed between lead and copper (or copper tungsten) absorbers. The hadronic section uses layers of stainless steel as an absorbing medium and silicon sensors as an active medium in the regions of high radiation exposure, and scintillator tiles directly read out by silicon photomultipliers in the remaining regions. As part of the development of the detector and its readout electronic components, a section of a silicon-based HGCAL prototype detector along with a section of the CALICE AHCAL prototype was exposed to muons, electrons and charged pions in beam test experiments at the H2 beamline at the CERN SPS in October 2018. The AHCAL uses the same technology as foreseen for the HGCAL but with much finer longitudinal segmentation. The performance of the calorimeters in terms of energy response and resolution, longitudinal and transverse shower profiles is studied using negatively charged pions, and is compared to GEANT4 predictions. This is the first report summarizing results of hadronic showers measured by the HGCAL prototype using beam test data.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Characterization of the polysilicon resistor in silicon strip sensors for ATLAS inner tracker as a function of temperature, pre- and post-irradiation

The high luminosity upgrade of the Large Hadron Collider, foreseen for 2029, requires the replacement of the ATLAS Inner Detector with a new all-silicon Inner Tracker (ITk). The expected ultimate total integrated luminosity of 4000 fb –1 means that the strip part of the ITk detector will be exposed to the total particle fluences and ionizing doses reaching the values of 1.6 · 10 15 1 MeV n eq /cm 2 and 0.66 MGy, respectively, including a safety factor of 1.5. Radiation hard n + -in-p micro-strip sensors were developed by the ATLAS ITk strip collaboration and are produced by Hamamatsu Photonics K.K. The active area of each ITk strip sensor is delimited by the n-implant bias ring, which is connected to each individual n + implant strip by a polysilicon bias resistor. The total resistance of the polysilicon bias resistor should be within a specified range to keep all the strips at the same potential, prevent the signal discharge through the grounded bias ring and avoid the readout noise increase. While the polysilicon is a ubiquitous semiconductor material, the fluence and temperature dependence of its resistance is not easily predictable, especially for the tracking detector with the operational temperature significantly below the values typical for commercial microelectronics. Dependence of the resistance of polysilicon bias resistor on the temperature, as well as on the total delivered fluence and ionizing dose, was studied on the specially-designed test structures called ATLAS Testchips, both before and after their irradiation by protons, neutrons, and gammas to the maximal expected fluence and ionizing dose. The resistance has an atypical negative temperature dependence. It is different from silicon, which shows that the grain boundary has a significant contribution to the resistance. Finally, we discuss the contributions by parameterizing the activation energy of the polysilicon resistance as a function of the temperature for unirradiated and irradiated ATLAS Testchips.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗