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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The Ribbon-to-Ribbon (RTR) approach to silicon ribbon growth was investigated. An existing RTR apparatus, RTR#1, was upgraded to allow for 5 cm wide ribbon growth with a finite stroke length of at least 15 cm. A second RTR apparatus, RTR#2, was designed, built, and operated which utilizes continuous feed mechanisms and allows continuous growth of 7.5 cm wide ribbons. RTR#2 includes development and utilization of advanced beam scanning (or shaping), high power lasers, and thermal profile modification elements to attain maximum growth velocities (with a design goal of 18 cm/min). Materials studies, process development, and thermal analyses are also described. Residual stresses and dislocation densities were minimized through theoretical and experimental efforts towards optimization of thermal profiles. Growth runs were performed on RTR#2 and solar cells were fabricated which demonstrated efficiencies greater than 10%.

Gurtler, R. W.↗
NASA NTRS1975

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The research program to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon is reported. The initial effort concentrated on the design and construction of the experimental dip-coating facility. The design was completed and its experimental features are discussed. Current status of the program is reported, including progress toward solar cell junction diffusion and miscellaneous ceramic substrate procurement.

Heaps, J. D.↗
NASA NTRS1976

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

To date, an experimental dip-coating facility was constructed. Using this facility, relatively thin (1 mm) mullite and alumina substrates were successfully dip-coated with 2.5 - 3.0 ohm-cm, p-type silicon with areas of approximately 20 sq cm. The thickness and grain size of these coatings are influenced by the temperature of the melt and the rate at which the substrate is pulled from the melt. One mullite substrate had dendrite-like crystallites of the order of 1 mm wide and 1 to 2 cm long. Their axes were aligned along the direction of pulling. A large variety of substrate materials were purchased or developed enabling the program to commence a substrate definition evaluation. Due to the insulating nature of the substrate, the bottom layer of the p-n junction may have to be made via the top surface. The feasibility of accomplishing this was demonstrated using single crystal wafers.

Heaps, J. D.↗
NASA NTRS1976

Laser-zone growth in a Ribbon-To-Ribbon (RTR) process, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The objective of this research is to fully investigate the Ribbon-To-Ribbon (R-T-R) approach to silicon ribbon growth. Initial work has concentrated on modification and characterization of an existing R-T-R apparatus. In addition, equipment for auxiliary heating of the melt is being evaluated and acquired. Modification of the remote viewing system and mechanical staging are nearly complete. Characterization of the laser and other components is in progress and several auxiliary heating techniques are being investigated.

Gurtler, R. W.↗
NASA NTRS1977

Dip-coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell-quality sheet silicon by coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon from the melt. The past quarter demonstrated significant progress in several areas. Seeded growth of silicon-on-ceramic (SOC) with an EFG ribbon seed was demonstrated. Different types of mullite were successfully coated with silicon. A new method of deriving minority carrier diffusion length, L sub n from spectral response measurements was evaluated. ECOMOD cost projections were found to be in good agreement with the interim SAMIS method proposed by JPL. On the less positive side, there was a decrease in cell performance which we believe to be due to an unidentified source of impurities.

Zook, J. D.↗
NASA NTRS1979

Silicon web process development

Silicon dendritic web, a single crystal ribbon shaped during growth by crystallographic forces and surface tension (rather than dies), is a highly promising base material for efficient low cost solar cells. The form of the product smooth, flexible strips 100 to 200 microns thick, conserves expensive silicon and facilitates automation of crystal growth and the subsequent manufacturing of solar cells. These characteristics, coupled with the highest demonstrated ribbon solar cell efficiency-15.5%-make silicon web a leading candidate to achieve, or better, the 1986 Low Cost Solar Array (LSA) Project cost objective of 50 cents per peak watt of photovoltaic output power. The main objective of the Web Program, technology development to significantly increase web output rate, and to show the feasibility for simultaneous melt replenishment and growth, have largely been accomplished. Recently, web output rates of 23.6 sq cm/min, nearly three times the 8 sq cm/min maximum rate of a year ago, were achieved. Webs 4 cm wide or greater were grown on a number of occassions.

Duncan, C. S.↗
NASA NTRS1979

Silicon Web Process Development

Silicon dendritic web, ribbon form of silicon and capable of fabrication into solar cells with greater than 15% AMl conversion efficiency, was produced from the melt without die shaping. Improvements were made both in the width of the web ribbons grown and in the techniques to replenish the liquid silicon as it is transformed to web. Through means of improved thermal shielding stress was reduced sufficiently so that web crystals nearly 4.5 cm wide were grown. The development of two subsystems, a silicon feeder and a melt level sensor, necessary to achieve an operational melt replenishment system, is described. A gas flow management technique is discussed and a laser reflection method to sense and control the melt level as silicon is replenished is examined.

Duncan, C. S.↗
DOE OSTI2021

Trichloroethylene replacements for the cleaning of silicone oil used in the internal gelation process

Silicone oil continues to be used as a gelation medium for internal gelation process. Typically, the silicone oil has been removed from the gel spheres using trichloroethylene (TCE) washes. However, TCE is no longer a viable option for large-scale operations because of environmental issues, health concerns, and disposal costs. Furthermore, during the development of a large gelation system at the Y-12 National Security Complex, two new TCE wash replacements were identified. NuSolv SOR-C and FluoSolv WS were used in a number of uranium runs and found to effectively remove silicone oil. NuSolv SOR-C was determined to be the best option.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Silicon web process development

The silicon web process takes advantage of natural crystallographic stabilizing forces to grow long, thin single crystal ribbons directly from liquid silicon. The ribbon, or web, is formed by the solidification of a liquid film supported by surface tension between two silicon filaments, called dendrites, which border the edges of the growing strip. The ribbon can be propagated indefinitely by replenishing the liquid silicon as it is transformed to crystal. The dendritic web process has several advantages for achieving low cost, high efficiency solar cells. These advantages are discussed.

Duncan, C. S.↗
DOE OSTI2024

Post-processing of phase change material in a zero-change commercial silicon photonic process

Integration of phase change material (PCM) with photonic integrated circuits can transform large-scale photonic systems by providing non-volatile control over phase and amplitude. The next generation of commercial silicon photonic processes can benefit from the addition of PCM to enable ultra-low power, highly reconfigurable, and compact photonic integrated circuits for large-scale applications. Despite all the advantages of PCM-based photonics, today’s commercial foundries do not provide them in their silicon photonic processes yet. We demonstrate the first-ever electrically programmable PCM device that is monolithically post-processed in a commercial foundry silicon photonics process using a few fabrication steps and coarse-resolution photolithography. These devices achieved 1.4 dB/μm of amplitude switching contrast using a thin layer of 12.5 nm GeSbTe in this work. We have also characterized the reconfiguration speed as well as repeatability of these devices over 20,000 switching cycles. Our solution enables non-volatile photonic VLSI systems that can be fabricated at low cost and high reliability in a commercial foundry process, paving the way for the development of non-volatile programmable photonic integrated circuits for a variety of emerging applications.

Optics↗
NASA NTRS1981

A U.S. view of silicon production processes

One of the objectives of the Low-Cost Solar Array Project is the demonstration of the practicality of processes for producing silicon, suitable for fabricating solar cells for terrestrial applications, at prices less than $14/kg. Approaches being investigated are related to a metallurgical silicon/silane/silicon process, a metallurgical silicon/dichlorosilane/Siemens-type process, and a silicon tetrachloride-zinc reduction process. There is a great probability that the first process will yield semiconductor grade Si at a price less than $14/kg. The second process appears to be capable of providing polysilicon with a purity equivalent to the present commercial semiconductor grade silicon at a price of about $20/kg. An important part of the program is the investigation of the effects of impurities on the performance of solar cells.

Lutwack, R.↗
NASA NTRS1978

Silicon crystals: Process for manufacturing wafer-like silicon crystals with a columnar structure

Wafer-like crystals suitable for making solar cells are formed by pouring molten Si containing suitable dopants into a mold of the desired shape and allowing it to solidify in a temperature gradient, whereby the large surface of the melt in contact with the mold is kept at less than 200 D and the free surface is kept at a temperature of 200-1000 D higher, but below the melting point of Si. The mold can also be made in the form of a slit, whereby the 2 sides of the mold are kept at different temperatures. A mold was milled in the surface of a cylindrical graphite block 200 mm in diameter. The granite block was induction heated and the bottom of the mold was cooled by means of a water-cooled Cu plate, so that the surface of the mold in contact with one of the largest surfaces of the melt was held at approximately 800 D. The free surface of the melt was subjected to thermal radiation from a graphite plate located 2 mm from the surface and heated to 1500 D. The Si crystal formed after slow cooling to room temperature had a columnar structure and was cut with a diamond saw into wafers approximately 500 mm thick. Solar cells prepared from these wafers had efficiencies of 10 to 11%.

Authier, B.↗
NASA NTRS1983

Investigation of nickel-silicon metallization process

The metallization of silicon solar cells passivated with silicon nitride coating was investigated by using commercial Ni pastes #5517 from Thick Film Systems, #7028-5 from Cermalloy, experimental formulation # X-A by Sollos, Inc. and evaporated Ti-Ni film. Comparative and reference tests were done with the Dupont Ag paste #7095 and with a mixture of Ni paste #5517 with Ag paste #7095 in the respective ratio of 9 to 1 by weight. The evaluation criteria for the metallization was the mechanical bond strength of the contact, solderability, copper plating ability and electrical characteristics in terms of Voc, Isc values and shape of the V-I curve. The results revealed that the Dupont Ag paste #7095 mt all required criteria, while the quality of the cells metalized with the commercial Ni paste #5517 from Thick Film Systems, #7028-5 from Cermalloy as well as the experimental paste # X-A from Sollos, Inc. was below the acceptable standards. A significant improvement was obtained with the mixture of Ni paste #5517 from Thick Film Systems with 10% addition of Dupont paste # 7095.

Macha, M.↗
NASA NTRS1982

Removing Chlorides From Metallurgical-Grade Silicon

Process for making low-cost silicon for solar cells is further improved. Silane product recycled to feed stripper column converts some of heavy impurities to volatile ones that pass off at top of column with light wastes. Impurities--chlorides of arsenic, phosphorus, and boron-would otherwise be carried to subsequent distillations where they would be difficult to remove. Since only a small amount of silane is recycled, silicon production efficiency remains high.

Breneman, W. C.↗
NASA NTRS1979

Silicon materials task of the low cost solar array project. Phase 3: Effect of impurities and processing on silicon solar cells

The 13th quarterly report of a study entitled an Investigation of the Effects of Impurities and Processing on Silicon Solar Cells is given. The objective of the program is to define the effects of impurities, various thermochemical processes and any impurity-process interactions on the performance of terrestrial silicon solar cells. The Phase 3 program effort falls in five areas: (1) cell processing studies; (2) completion of the data base and impurity-performance modeling for n-base cells; (3) extension of p-base studies to include contaminants likely to be introduced during silicon production, refining or crystal growth; (4) anisotropy effects; and (5) a preliminary study of the permanence of impurity effects in silicon solar cells. The quarterly activities for this report focus on tasks (1), (3) and (4).

Hopkins, R. H.↗
NASA NTRS1986

Strength optimization of alpha-SiC by improved processing

Silicon carbide is of great interest for structural use in aircraft and automobile engines. This ceramic combines high thermal conductivity and low coefficient of thermal expansion, and consequently has good thermal shock resistance. However, like other ceramics, silicon carbide shows strength variability due to processing flaws such as large voids, shrinkage cracks, and inclusions. Agglomerates in the starting powder seem to be the predominant cause of such defects. Improved processing techniques such as slurry pressing and hot isostatic pressing (HIP) were employed to minimize these defects and to improve strength and reliability in the fabricated material. For this purpose 2-inch diameter disks were fabricated by various consolidation techniques. These include: dry pressing and sintering, slurry pressing and sintering, and slurry pressing and HIPing. The results are discussed.

Dutta, Sunil↗