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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Mode-multiplexed photonic integrated vector dot-product core from inverse design

Photonic computing has the potential to harness the full degrees of freedom (DOFs) of the light field, including the wavelength, spatial mode, spatial location, phase quadrature, and polarization, to achieve a higher level of computing parallelism and scalability than digital electronic processors. While multiplexing using the wavelength and other DOFs can be readily integrated on silicon photonics platforms with compact footprints, conventional mode-division multiplexed (MDM) photonic designs occupy areas exceeding tens to hundreds of microns for a few spatial modes, significantly limiting their scalability. Here, we utilize inverse design to demonstrate an ultracompact photonic computing core that calculates vector dot products based on MDM coherent mixing. Our dot-product core integrates the functionalities of two-mode multiplexers and one multimode coherent mixer within a nominal footprint of 5 μm x 3 μm . We have experimentally demonstrated computing examples on the fabricated dot-product core, including complex number multiplication and motion estimation using optical flow. The compact dot-product core design enables large-scale on-chip integration in a parallel photonic computing primitive cluster for high-throughput scientific computing and computer vision tasks.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2012

Process for Patterning Indium for Bump Bonding

An innovation was created for the Cosmology Large Angular Scale Surveyor for integration of low-temperature detector chips with a silicon backshort and a silicon photonic choke through flipchip bonding. Indium bumps are typically patterned using liftoff processes, which require thick resist. In some applications, it is necessary to locate the bumps close to high-aspect-ratio structures such as wafer through-holes. In those cases, liftoff processes are challenging, and require complicated and time-consuming spray coating technology if the high-aspect-ratio structures are delineated prior to the indium bump process. Alternatively, processing the indium bumps first is limited by compatibility of the indium with subsequent processing. The present invention allows for locating bumps arbitrarily close to multiple-level high-aspect-ratio structures, and for indium bumps to be formed without liftoff resist. The process uses the poor step coverage of indium deposited on a silicon wafer that has been previously etched to delineate the location of the indium bumps. The silicon pattern can be processed through standard lithography prior to adding the high-aspect-ratio structures. Typically, high-aspectratio structures require a thick resist layer so this layer can easily cover the silicon topography. For multiple levels of topography, the silicon can be easily conformally coated through standard processes. A blanket layer of indium is then deposited onto the full wafer; bump bonding only occurs at the high points of the topography.

Denis, Kevin↗
DOE OSTI2025

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors to silicon photonics. However, its potential for optoelectronic applications is largely untapped due in part to the lack of quantitative studies of its optical properties. Here, the unusually low absorptance and high photoluminescence quantum efficiency of single‐crystalline InSe flakes with thickness in the hundreds of nanometers are studied. InSe emits brightly at room temperature from its direct bandgap with a peak photoluminescence quantum yield (PLQY) of 20%, despite displaying indirect bandgap like low absorption coefficient due to the symmetry of its crystal structure. By performing pump‐dependent PLQY measurements, the radiative and nonradiative recombination coefficients are extracted, including the Shockley‐Read‐Hall and Auger coefficients. Finally, a proof‐of‐concept alternating current electroluminescent device at low temperature is demonstrated to show the promise of InSe in optoelectronic technology such as highly transparent, bright NIR light sources.

Geng, Jamie↗
DOE OSTI2024

Mixed domain coherent link with electrically reconfigurable IMDD and coherent modes for O-band data center applications

We report the first O-band link with electrically reconfigurable intensity-modulation direct-detection (IMDD) and coherent operation using custom silicon photonic chips packaged with commercial electronic chips. Transmission below the KP4-FEC threshold is shown using commercial 53 Gbaud PAM4 digital signal processing (DSP) for 16QAM (200 Gbps/ λ ) and PAM4 (100 Gbps/ λ ). Efficient operation of the packaged full link at 12 and 11.2 pJ/bit is achieved for the PAM4 and 16QAM modes, respectively.

Misak, Stephen (ORCID:0000000154973084)↗
DOE OSTI2025

Automated tuning of a ring-assisted MZI-based interleaver for Kerr frequency combs

We demonstrate a compact ring-assisted Mach–Zehnder interferometer (RAMZI)-based silicon photonic interleaver with a 400 GHz free spectral range (FSR), featuring flat passbands exceeding a spectral range of 50 nm. Additionally, we introduce a novel, to the best of our knowledge, add-on structure and tuning method enabling automated compensation for fabrication imperfections, precise shaping of the RAMZI flat-top passbands, and alignment with Kerr comb lines. Experimental results have shown successful interleaving of eight channels of distributed-feedback (DFB) lasers as well as a 200 GHz Kerr comb, both achieving an extinction ratio of approximately 20 dB.

Wang, Songli (ORCID:0009000626380795)↗
NASA NTRS2015

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background (CMB) polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 gigahertz focal plane and now describe the fabrication of a 37-element dual-polarization detector module for measurement of the CMB at 90 gigahertz. The 72-TES (Transition Edge Sensor)-based bolometers in each module are coupled to a niobium-based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150 millikelvins and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump-bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 80 millimeters in size comprise two focal planes. These, along with the recently delivered 40 gigahertz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University-led ground-based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Detectors↗
NASA NTRS2015

Fabrication of Feedhorn-Coupled Transition Edge Sensor Arrays for Measurement of the Cosmic Microwave Background Polarization

Characterization of the minute cosmic microwave background polarization signature requires multi-frequency high-throughput precision instrument systems. We have previously described the detector fabrication of a 40 GHz focal plane and now describe the fabrication of the detector modules for measurement of the CMB at 90GHz. The 74-TES based bolometers in each module are coupled to a niobium based planar orthomode transducer with integrated band defining filters implemented in microstrip transmission line. A single crystal silicon dielectric substrate serves as microstrip dielectric and as a thermal link between the membrane isolated MoAu TES operating at 150mK and the heat bath. A short silicon leg between the heat bath and the TES bolometer is designed for ballistic phonon transport and provides improved process control and uniformity of thermal conductance in the presence of phonon scattering on roughened surfaces. Micro-machined structures are used to realize the orthomode transducer backshort, provide out of band signal rejection, and a silicon photonic choke for feedhorn coupling are described. The backshort, choke wafer, and detector wafer are indium bump bonded to create a single 37-element dual-polarization detector module. Fourteen such hexagonally shaped modules each 90 mm in size comprise two focal planes. These, along with the recently delivered 40GHz focal plane, will survey a large fraction of the sky as part of the Johns Hopkins University led ground based CLASS (Cosmology Large Angular Scale Surveyor) telescope.

Characterization↗
NASA NTRS2021

Anisotropic Wet Etching of Si as a Fabrication Tool Enabling 3-D Microphotonics Structures and Devices

It is shown that due to high speed and large volume of production, anisotropic wet etching of Si is a unique method of manufacturing high quality micropyramidal arrays for silicon photonics. Four types of arrays were fabricated: (i) square pyramids with the 54.7 slope of the sidewall surface, (ii) microcones with the 45 slope of sidewall surface, (iii) inverted square pyramids with 54.7 slope, and (iv) inverted triangular pyramids with different angles of the sidewalls. It is shown that the first type of arrays has a capability to produce tightly focused mid-wave infrared (MWIR) beams at the tips of the pyramids. Other arrays can be also used as light concentrators and various multifunctional microphotonic components.

Astratov, Vasily N.↗
DOE OSTI2024

Unraveling the Nature of Lasing Emission from Hybrid Silicon Nitride and Colloidal Nanocrystal Photonic Crystals with Low Refractive Index Contrast

Silicon nitride is used for its low optical loss and high thermal stability, making it a suitable platform for visible-light applications in integrated photonic devices. However, its application has been limited due to inefficient light emission, a problem addressed by integrating various types of light emitters onto the platform. In particular, the integration of solution-processable colloidal nanocrystals (NCs) as optical gain materials onto the silicon nitride platform is a promising route but requires a more solid theoretical footing. By leveraging 2D surface-emitting photonic crystal structures combined with NCs, we effectively confine and manipulate light to achieve lasing from green to red. Building on this, we model the light–matter interactions of the low index contrast NC/nitride platform, validated by extensive experimental validations through Fourier imaging techniques, revealing the full photonic band structure and showing clear mode congestion. Finally, these comprehensive studies confirm the potential of hybrid NC-based structures for fully integrated on-chip laser applications and indicate routes for further improvement.

BIC Lasing↗
DOE OSTI2025

Performance of an optical TPC Geant4 simulation with opticks GPU-accelerated photon propagation

We investigate the performance of Opticks, a NVIDIA OptiX API 7.5 GPU-accelerated photon propagation tool compared with a single-threaded Geant4 simulation. We compare the simulations using an improved model of the NEXT-CRAB-0 gaseous time projection chamber. Performance results suggest that Opticks improves simulation speeds by between 58.47 ± 0.02 and 181.39 ± 0.28 times relative to a CPU-only Geant4 simulation and these results vary between different types of GPU and CPU. A detailed comparison shows that the number of detected photons, along with their times and wavelengths, are in good agreement between Opticks and Geant4.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1978

Mechanisms of photon-induced changes in silicon solar cell parameters

Reversible changes in solar cell performance were induced by AM1 illumination and evaluated by measuring short-circuit current, weak light spectral response, and minority carrier diffusion length. In n(+)p cells the change manifests itself as a reduced short-circuit current, a loss of the red response, and a reduction in minority carrier diffusion length. In p(+)n cells there are two-photon induced effects: (1) enhancement of the blue spectral response, presumably occurring in the p(+) layer and (2) degradation in open-circuit voltage at low light levels due to increased leakage occurring only after the junction edge is exposed to bright light. Most of these photon effects are attributed to defects in the silicon.

Cheng, L. J.↗
DOE OSTI2025

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗
NASA NTRS2001

Narrow band emission from lithographically defined photonic bandgap structures in silicon: matching theory and experiment

The authors previously reported discovery of narrow, thermal emission bands from symmetrically patterned features etched into silicon wafers. In this paper, we report further results that show the measured absorption peaks for such patterned surfaces match theoretical calculations of the complete electrodynamic problem solved using the Transfer Matrix Method (TMM).

photonic↗
NASA NTRS1989

Photon counting modules using RCA silicon avalanche photodiodes

Avalanche photodiodes (APD) are excellent small area, solid state detectors for photon counting. Performance possibilities include: photon detection efficiency in excess of 50 percent; wavelength response from 400 to 1000 nm; count rate to 10 (exp 7) counts per sec; afterpulsing at negligible levels; timing resolution better than 1 ns. Unfortunately, these performance levels are not simultaneously available in a single detector amplifier configuration. By considering theoretical performance predictions and previous and new measurements of APD performance, the anticipated performance of a range of proposed APD-based photon counting modules is derived.

Lightstone, Alexander W.↗
DOE OSTI2025

Ion Traps and Packaging for Heterogenous Integration - Chimera

Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.

42 ENGINEERING↗