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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Multiplexed color centers in a silicon photonic cavity array

Entanglement distribution is central to the modular scaling of quantum processors and establishing quantum networks. Color centers with telecom-band transitions and long spin coherence times are suitable candidates for long-distance entanglement distribution. However, high-bandwidth memory-enhanced quantum communication is limited by high-yield, scalable creation of efficient spin-photon interfaces. Here, we develop a silicon photonics platform consisting of arrays of bus-coupled cavities. The coupling to a common bus waveguide enables simultaneous access to individually addressable cavity-enhanced T center arrays. We demonstrate frequency-multiplexed operation of two T centers in separate photonic crystal cavities. In addition, we investigate the cavity enhancement of a T center through hybridized modes formed between physically distant cavities. Our results show that bus-coupled arrays of cavity-enhanced color centers could enable efficient on-chip and long-distance entanglement distribution.

Komza, Lukasz↗
DOE OSTI2025

Dual-polarization O-band silicon photonics transmitter with an integrated tunable laser, Mach-Zehnder modulators, and SOAs

Presented is an O-band silicon photonics dual-polarization coherent/IMDD modulator integrated with semiconductor optical amplifiers and tunable laser to enhance the short-reach link budget. The laser demonstrated output power >6 dBm and a <250 kHz linewidth over a 14 nm tuning range. Modulators paired with custom 64 Gbaud QPSK drivers exhibited improved analog link sensitivity compared to similar devices without integrated gain sections. They also demonstrated 53 Gbaud dual-polarization PAM4 operation when characterized with a linear driver and MaxLinear 100G/lane DSP board. Both optical links achieved BERs at the KP4-FEC threshold and overall transmitter assembly energy consumption <6.9 pJ/bit without any thermal control when at steady room temperatures.

Liu, Junqian (ORCID:0000000167337650)↗
DOE OSTI2025

Entanglement of a nuclear spin qubit register in silicon photonics

Colour centres provide an optical interface to quantum registers based on electron and nuclear spin qubits in solids. The T centre in silicon is an emerging spin–photon interface that combines telecom O-band optical transitions and an electron spin in a scalable photonics platform. Here, in this study, we integrate T centres into single-mode photonic waveguides in a silicon-on-insulator platform. We demonstrate the initialization, coherent control and state read-out of a three-qubit register based on the electron spin of a T centre coupled to a hydrogen and a silicon nuclear spin. The spin register exhibits spin echo coherence times of 0.41(2) ms for the electron spin, 112(12) ms for the hydrogen nuclear spin and 67(7) ms for the silicon nuclear spin. We use nuclear–nuclear two-qubit gates to generate entanglement between the two nuclear spins with a fidelity of F = 0.77(3) and a coherence time of ${T}_{2}^{* }=2.60(8)$ ms. Our results show that a T centre in silicon photonics can realize a multi-qubit register with an optical interface for quantum communication.

Song, Hanbin [Lawrence Berkeley National Laborator↗
DOE OSTI2026

Slow-Light Mid-IR Silicon Photonic Chips for NO 2 and CH 4 Gas Detection

A compact, chip-scale mid-infrared gas sensor is demonstrated, leveraging a two-dimensional photonic crystal waveguide (PCW) fabricated on a silicon-on-insulator (SOI) platform. The PCW comprises a hexagonal lattice with lattice constant a = 860 nm and hole radius r = 0.22a, incorporating a central line defect of reduced-radius holes (r s = 0.7r) to induce slow-light propagation near the photonic band edge with a group index of approximately 73, thereby enhancing light-matter interaction. The sensor operates at fundamental absorption wavelengths of 3.42 μm for nitrogen dioxide (NO 2 ) and 3.40 μm for methane (CH 4 ), utilizing the strongest molecular vibrational transitions for maximum sensitivity. Experimental validation was conducted using dynamically diluted gas mixtures generated by mass flow controllers, with signal acquisition performed by a liquid nitrogen-cooled InSb detector. For NO 2 , the sensor exhibited excellent linear response over 5–25 ppm (part per million) with coefficient of determination R 2 = 0.9934, achieving a detection limit of 210 ppb (part per billion)─representing the first reported silicon photonic-based NO 2 detection. For CH 4 , exposure to 25 ppm resulted in a 6.4% decrease in transmitted intensity, demonstrating multigas sensing capability. The CMOS-compatible fabrication process and compact 3 mm device footprint establish this SOI-PCW platform as a scalable, low-power solution for integrated mid-infrared gas sensing, with significant potential for environmental monitoring and industrial safety applications.

Crystals↗
DOE OSTI2024

Characterization of Silicon Photomultiplier Photon Detection Efficiency at Liquid Nitrogen Temperature

The detection of individual photons at cryogenic temperatures is of interest to many experiments searching for physics beyond the Standard Model. Silicon photomultipliers (SiPMs) are often deployed in liquid argon or liquid xenon to detect scintillation light either directly or after it has been wavelength-shifted. Maximizing the photon detection efficiency (PDE) of the SiPMs used in these experiments optimizes the sensitivity to new physics; however, the PDEs of commercial SiPMs, although well known at room temperature, are not well characterized at the cryogenic temperatures at which many experiments operate them. Here we present results from an experimental setup that measures the photon detection efficiencies of silicon photomultipliers at liquid nitrogen temperature, 77 K. Results from a KETEK PM3325-WB-D0 and a Hamamatsu S13360-3050CS silicon photomultiplier — of R&D interest to the LEGEND experiment — exhibit a decrease in photon detection efficiency greater than 20% at liquid nitrogen temperature relative to room temperature for 562 nm light.

Cryogenic detectors↗
DOE OSTI2026

TTDAQ: A Continuous Flow, Timing and Trigger DAQ System

Final Scientific/Technical Report for DOE Award DE-SC0019581, “TTDAQ: A Continuous Flow, Timing and Trigger DAQ System.” The report summarizes Telluric Labs’ Phase II STTR work developing silicon-photonic building blocks for a software-defined, continuous-flow, trigger-less data acquisition system for next-generation high-energy and nuclear-physics detectors. The project focused on radiation-hard photonic integrated circuits, remote optical illumination, dense wavelength-division multiplexing, and a differential microring-resonator transceiver architecture designed to improve high-speed optical link stability and bandwidth. The report describes project objectives, technical accomplishments, AIM Photonics tape-outs, bench characterization, radiation-hardness testing, deferred integration work, and potential applications beyond physics readout.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

On-chip pulse shaping of entangled photons

The miniaturization of optical systems via integrated photonics is critical to the ultimate scalability and performance of photonic quantum processors, yet many longstanding optical signal processing capabilities—such as Fourier-transform pulse shaping—remain unrealized on chip. In this work, we demonstrate on-chip spectral shaping of entangled photons using a multichannel microring-resonator-based silicon photonic pulse shaper. Achieving line-by-line phase control on a 3 GHz grid for two frequency-bin-entangled qudits, the pulse shaper's fine spectral resolution enables control of nanosecond-scale temporal features, which are observed by direct coincidence detection of biphoton correlation functions that show excellent agreement with theory. This work marks a demonstration of biphoton pulse shaping using an integrated spectral shaper and holds significant promise for applications in photonic quantum information processing.

Entanglement manipulation↗
DOE OSTI2024

High power chip-scale laser

The lack of high-power integrated lasers has been limiting silicon photonics. Despite much progress in chip-scale laser integration, power output remains below levels required for key applications due to low energy efficiency at high pumping currents. Here we break this power limitation by coupling a broad-area multimode gain chip to a silicon-nitride ring resonator and single-mode filter. The resulting optical feedback causes the multimode-gain chip to concentrate its power into a single highly coherent mode. Our device produces more than 150 mW of power and 400 kHz linewidth. We achieve these metrics while maintaining a small footprint of 3 mm 2 .

Antman, Yair↗
DOE OSTI2025

Unusually Strong Near‐Infrared Photoluminescence of Highly Transparent Bulk InSe Flakes

Abstract Bulk γ‐InSe has a direct bandgap of 1.24 eV, which corresponds to near infrared wavelengths ( λ = 1.0 µm) useful in optoelectronic applications from biometric detectors to silicon photonics. However, its potential for optoelectronic applications is largely untapped due in part to the lack of quantitative studies of its optical properties. Here, the unusually low absorptance and high photoluminescence quantum efficiency of single‐crystalline InSe flakes with thickness in the hundreds of nanometers are studied. InSe emits brightly at room temperature from its direct bandgap with a peak photoluminescence quantum yield (PLQY) of 20%, despite displaying indirect bandgap like low absorption coefficient due to the symmetry of its crystal structure. By performing pump‐dependent PLQY measurements, the radiative and nonradiative recombination coefficients are extracted, including the Shockley‐Read‐Hall and Auger coefficients. Finally, a proof‐of‐concept alternating current electroluminescent device at low temperature is demonstrated to show the promise of InSe in optoelectronic technology such as highly transparent, bright NIR light sources.

Geng, Jamie↗
DOE OSTI2025

Automated tuning of a ring-assisted MZI-based interleaver for Kerr frequency combs

We demonstrate a compact ring-assisted Mach–Zehnder interferometer (RAMZI)-based silicon photonic interleaver with a 400 GHz free spectral range (FSR), featuring flat passbands exceeding a spectral range of 50 nm. Additionally, we introduce a novel, to the best of our knowledge, add-on structure and tuning method enabling automated compensation for fabrication imperfections, precise shaping of the RAMZI flat-top passbands, and alignment with Kerr comb lines. Experimental results have shown successful interleaving of eight channels of distributed-feedback (DFB) lasers as well as a 200 GHz Kerr comb, both achieving an extinction ratio of approximately 20 dB.

Wang, Songli (ORCID:0009000626380795)↗
DOE OSTI2025

Performance of an optical TPC Geant4 simulation with opticks GPU-accelerated photon propagation

We investigate the performance of Opticks, a NVIDIA OptiX API 7.5 GPU-accelerated photon propagation tool compared with a single-threaded Geant4 simulation. We compare the simulations using an improved model of the NEXT-CRAB-0 gaseous time projection chamber. Performance results suggest that Opticks improves simulation speeds by between 58.47 ± 0.02 and 181.39 ± 0.28 times relative to a CPU-only Geant4 simulation and these results vary between different types of GPU and CPU. A detailed comparison shows that the number of detected photons, along with their times and wavelengths, are in good agreement between Opticks and Geant4.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2025

Single‐photon emitters in PECVD‐grown silicon nitride films: from material growth to photophysical properties

Abstract Silicon nitride (SiN) is a key material for quantum photonics due to its wide transparency window, high refractive index, low optical losses, and semiconductor foundry compatibility. We study the formation of single‐photon emitters in SiN films grown by plasma‐enhanced chemical vapor deposition (PECVD), exploring their photophysical properties and dependence on growth conditions. Emitters were observed across the entire range of nitrogen‐to‐silicon precursor ratios, from silicon‐rich to nitrogen‐rich conditions, enabled by the low background fluorescence. We demonstrate single‐photon emitters in SiN films with a higher refractive index (1.8–1.9) compared to our previous reports (∼1.7). Notably, nitrogen‐rich, thinner films yield particularly bright emitters with shorter emission lifetimes, likely due to more efficient annealing. Silicon‐rich SiN films exhibit red‐shifted emission, suggesting that composition may provide a mechanism for wavelength tuning. These findings establish the feasibility of emitters formation in foundry standard PECVD tools, advancing the scalability and lab‐to‐fab transition of SiN‐based quantum photonic technologies.

Materials Science↗
DOE OSTI2025

Ion Traps and Packaging for Heterogenous Integration - Chimera

Microfabricated surface ion traps and silicon-based photonics are critical technologies for scaling quantum systems. Current ion trap architectures face scalability and integration challenges due to limitations in optical access, fabrication techniques, and material compatibility. State-of-the-art quantum computers and atomic clocks are investigating monolithic integration, which necessitates custom traps for each ion species and has not overcome the integration hurdles presented by merging these technologies. The Chimera (Ion Traps and Packaging for Heterogeneous Integration) project proposes a novel approach utilizing heterogeneous integration (HI) of ion traps and photonic circuits. This separation of components allows for flexibility in ion trap design and reduces fabrication compromises. The Chimera project specifically designed an ion trap to interface vertically with a separately fabricated waveguide chip and demonstrates the first steps to integrating them at the packaging level. The ion trap features a large area of removed silicon, allowing the photonics chip outputs closer to the ion trap, improving alignment and packaging processes. The alignment must be accurate to < 1 µm to ensure that the light from the waveguide can overlap with the trapping region. This fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. By combining separate chips, we demonstrate a new path for scaling trapped ion technology that is less reliant on monolithic integration. We successfully fabricated a trap with a large area of oxide removed, resulting in a region thinned to about 40 µm, a key milestone toward successful integration.

42 ENGINEERING↗
DOE OSTI2025

Triangular cross-section grating couplers for integrated quantum nanophotonic hardware in silicon carbide

We design, fabricate, and characterize fishbone grating couplers for triangular cross-section photonics in silicon carbide compatible with color center integration. The periodic and aperiodic grating coupler designs are optimized to outcouple up to 31% of light in the fundamental TE mode of a triangular waveguide. The devices are fabricated using an ion beam etching process in a 4H–SiC sample implanted with NV center ensembles. The room-temperature transmission and the cryogenic NV center photoluminescence collection measurements indicate experimental grating coupler efficiency of up to 24%. This result provides a scalable method to efficiently extract color center light from SiC quantum nanophotonic devices to free-space optics.

Saha, Pranta↗