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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Temperature Compensated Sapphire Resonator for Ultrastable Oscillator Operating at Temperatures Near 77 Deg Kelvin

A sapphire resonator for an ultrastable oscillator capable of substantial performance improvements over the best available crystal quartz oscillators in a compact cryogenic package is based on a compensation mechanism enabled by the difference between copper and sapphire thermal expansion coefficients for so tuning the resonator as to cancel the temperature variation of the sapphire's dielectric constant. The sapphire resonator consists of a sapphire ring separated into two parts with webs on the outer end of each to form two re-entrant parts which are separated by a copper post. The re-entrant parts are bonded to the post by indium solder for good thermal conductivity between parts of that subassembly which is supported on the base plate of a closed copper cylinder (rf shielding casing) by a thin stainless steel cylinder. A unit for temperature control is placed in the stainless steel cylinder and is connected to the subassembly of re-entrant parts and copper post by a layer of indium for good thermal conduction. In normal use, the rf shielding casing is placed in a vacuum tank which is in turn placed in a thermos flask of liquid nitrogen. The temperature regulator is controlled from outside the thermos flask to a temperature in a range of about 40K to 150K, such as 87K for the WGH-811, mode of resonance in response to microwave energy inserted into the rf shielding casing through a port from an outside source.

Dick, G. John↗
NASA NTRS1997

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Lakew, B.↗
NASA NTRS2006

Slow Crack Growth and Fracture Toughness of Sapphire for the International Space Station Fluids and Combustion Facility

The fracture toughness, inert flexural strength, and slow crack growth parameters of the r- and a-planes of sapphire grown by the Heat Exchange Method were measured to qualify sapphire for structural use in the International Space Station. The fracture toughness in dry nitrogen, K(sub Ipb), was 2.31 +/- 0.12 MPa(square root of)m and 2.47 +/- 0.15 MPa(squre root of)m for the a- and r-planes, respectively. Fracture toughness measured in water via the operational procedure in ASTM C1421 was significantly lower, K(sub Ivb) = 1.95+/- 0.03 MPa(square root of)m, 1.94 +/- 0.07 and 1.77 +/- 0.13 MPa(square root of)m for the a- , m- and r-planes, respectively. The mean inert flexural strength in dry nitrogen was 1085 +/- 127 MPa for the r-plane and 1255 +/- 547 MPa for the a-plane. The power law slow crack growth exponent for testing in water was n = 21 +/- 4 for the r-plane and n (greater than or equal to) 31 for the a-plane. The power law slow crack growth coefficient was A = 2.81 x 10(exp -14) m/s x (MPa(squre root of)m)/n for the r-plane and A (approx. equals)2.06 x 10(exp -15) m/s x (MPa(square root of)m)/n for the a-plane. The r- and a-planes of sapphire are relatively susceptible to stress corrosion induced slow crack growth in water. However, failure occurs by competing modes of slow crack growth at long failure times and twinning for short failure time and inert environments. Slow crack growth testing needs to be performed at low failure stress levels and long failure times so that twinning does not affect the results. Some difficulty was encountered in measuring the slow crack growth parameters for the a-plane due to a short finish (i.e., insufficient material removal for elimination of the damage generated in the early grinding stages). A consistent preparation method that increases the Weibull modulus of sapphire test specimens and components is needed. This would impart higher component reliability, even if higher Weibull modulus is gained at the sacrifice of absolute strength of the component. The current specification frequently used for the preparation of sapphire test specimens and components (e.g., a "60/40" scratch-dig finish) is inadequate to avoid a short finish.

Salem, Jonathan A.↗
NASA NTRS1992

Sapphire-fiber-based intrinsic Fabry-Perot interferometer

A sapphire optical fiber intrinsic Fabry-Perot interferometric sensor is demonstrated. A length of multimode sapphire fiber that functions as a Fabry-Perot cavity is spliced to a silica single-mode fiber. The interferometric signals of this sensor are produced by the interference between the reflection from the silica-sapphire fiber splice and the reflection from the free end face of the sapphire fiber. This sensor has been demonstrated for temperature measurement. A resolution of 0.2 C has been obtained over a measurement range of 310 C to 976 C.

Wang, Anbo↗
NASA NTRS1992

Buffer layers for high-Tc thin films on sapphire

Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.

Wu, X. D.↗
NASA NTRS1994

Microwave Frequency Discriminator With Sapphire Resonator

Cooled sapphire resonator provides ultralow phase noise. Apparatus comprises microwave oscillator operating at nominal frequency of about 8.1 GHz, plus frequency-discriminator circuit measuring phase fluctuations of oscillator output. One outstanding feature of frequency discriminator is sapphire resonator serving as phase reference. Sapphire resonator is dielectric ring resonator operating in "whispering-gallery" mode. Functions at room temperature, but for better performance, typically cooled to operating temperature of about 80 K. Similar resonator described in "Sapphire Ring Resonator for Microwave Oscillator" (NPO-18082).

Santiago, David G.↗
NASA NTRS2002

Ion Milling of Sapphire

The ion figuring system at the Marshall Space Flight Center has been successfully used for at least three previous investigations into the ion milling of metals. The research was directed toward improving the surface quality of X-ray directing optics. These studies were performed on surfaces that were already hand polished to an excellent surface quality and were intended to remove the residual unwanted figure left by those techniques. The ion milling was typically carried out on test surfaces or mandrels that were several centimeters in width and length. The good thermal conductivity of the metal samples allowed the ion beam to be directed onto the sample for an indefinite period of time. This is not true of sapphire or most electrical insulators and problems have arisen in recent attempts to ion mill thin samples of sapphire. The failure and fracture of the material was likely due to thermal stresses and the relatively low thermal conductivity of sapphire (compared to most metals), These assumed stresses actually provided the key as to how they might be monitored. A thermal gradient in the sapphire sample will induce an effective index of refraction change and because of the shape constraint and the crystal structure and simple thermal expansion, this index change will be nonuniform across the sample. In all but simple cubic crystal structures, this leads to a spatially nonuniform optical retardance induced on any polarized optical beam traversing the sample, and it is this retardance that can be monitored using standard polarimetric procedures.

Don A. Gregory↗
NASA NTRS2016

Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire

Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.

Duzik, Adam J.↗
DOE OSTI2025

Au assisted smooth ultrathin epitaxial ZnO film grown by pulsed laser deposition on sapphire(0001)

High quality ZnO has applications in photonics and electronics. Literature has shown that continuous, but rough ZnO film can be grown on sapphire substrate by pulsed laser deposition (PLD). In this work, ZnO and Au were co-deposited by PLD on sapphire(0001) substrates from a single ZnO target overlaid with an Au strip that serves as a catalyst. The reflection high-energy electron diffraction (RHEED) patterns show paired double stripes from sample of ZnO-Au where the difference of in-plane lattice parameters between ZnO and Au is 11.4 %. The two-dimensional (2D) reciprocal space maps constructed from azimuthal RHEED (ARHEED) patterns reveal parallel epitaxial relationship between ZnO and Au in the continuous ZnO-Au film on sapphire substrate. Transmission electron microscopy (TEM) cross section images and energy dispersive spectroscopy maps show a minute amount of Au nanocrystals distributed in the entire ultrathin ZnO film. Atomic force microscopy shows the root-mean-square roughness of the surface of ultrathin ZnO film with Au is in the sub-nm range. The ARHEED and TEM results show that a couple of atomic percentages of Au co-deposited with ZnO catalyzes the growth of smooth ultrathin epitaxial ZnO film.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Temperature Compensated Sapphire Resonator for Ultra-Stable Oscillator Capability at Temperatures Above 77 Kelvin

We report on the design and test of a whispering gallery sapphire resonator for which the dominant (WGH xxxsubn11) microwave mode family shows frequency-stable, compensated operation for temperatures above 77 Kelvin. The resonator makes possible a new ultra-stable oscillator (USO) capability that promises performance improvements over the best available crystal quartz oscillators in a compact cryogenic package. A mechanical compensation mechanism, enabled by the difference between copper and sapphire expansion coefficients, tunes the resonator to cancel the temperature variation of sapphire's dielectric constant.

sapphire resonator frequency stability temperature↗
DOE OSTI2025

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive x-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energy-dispersive x-ray spectroscopy spectra to film thicknesses using NIST DTSA-II software. The thickness estimates determined by this method were consistent with scanning transmission electron microscopy measurements done for selected samples. Scanning electron microscopy images revealed faceted surfaces indicative of a tendency toward three-dimensional growth. X-ray diffraction spectra confirmed that the films were highly crystalline and exhibited preferential orientation in alignment with the substrate. Atomic force microscopy measurements show that film thicknesses are consistent across samples grown on both GaN templates and sapphire substrates, with typical roughnesses around 10 nm. Transmittance spectra of films grown on double-side-polished sapphire substrates yielded band gaps of 4.28 ± 0.06 eV for samples exhibiting close-to-ideal stoichiometry. Comparison of the measured spectra with ab initio calculations are in good agreement both near the bandgap and at higher energies where excitation is into higher-lying bands. These findings provide insight into the growth and characterization of MgGeN2, contributing to the development of this material for potential applications in optoelectronics and power electronics.

Hu, Chenxi (ORCID:0000000236299660)↗
DOE OSTI2026

Enhanced sensitivity to trace 238 U impurity of sapphire via coincidence neutron activation analysis

Sapphire has mechanical and electrical properties that are advantageous for the construction of internal components of radiation detectors such as time projection chambers and bolometers. However, it has proved difficult to assess its 232 Th and 238 U content down to the picogram per gram level. Here, this work reports an experimental verification of a computational study that demonstrates 𝛾⁢𝛾 coincidence counting, coupled with neutron activation analysis (NAA), can reach ppt sensitivities. Combining results from 𝛾⁢𝛾 coincidence counting with those of earlier single-𝛾 counting based NAA shows that a sample of Saint Gobain sapphire has 232 Th and 238 U concentrations of <0.26 ppt and <2.3 ppt, respectively; the best constraints on the radiopurity of sapphire.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1976

Shear strength of metal-sapphire contacts

The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.

Pepper, S. V.↗
NASA NTRS1987

Titanium-doped sapphire laser research and design study

Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.

Moulton, Peter F.↗
NASA NTRS1987

Bonding Lexan and sapphire to form high-pressure, flame-resistant window

Flammable materials have been studied in normal gravity and microgravity for many years. Photography plays a major role in the study of the combustion process giving a permanent visual record that can be analyzed. When these studies are extended to manned spacecraft, safety becomes a primary concern. The need for a high-pressure, flame-resistant, shatter-resistant window permitting photographic recording of combustion experiments in manned spacecraft prompted the development of a method for bonding Lexan and sapphire. Materials that resist shattering (e.g., Lexan) are not compatible with combustion experiments; the material loses strength at combustion temperatures. Sapphire is compatible with combustion temperatures in oxygen-enriched atmospheres but is subject to shattering. Combining the two materials results in a shatter-resistant, flame-resistant window. Combustion in microgravity produces a low-visibility flame; however, flame propagation and flame characteristics are readily visible as long as there is no deterioration of the image. Since an air gap between the Lexan and the sapphire would reduce transmission, a method was developed for bonding these unlike materials to minimize light loss.

Richardson, William R.↗
NASA NTRS1986

Pulsed injection control of a titanium-doped sapphire laser

Injection control of a tunable Ti:sapphire laser using a narrow-bandwidth pulsed dye laser operating at a wavelength removed from the peak of the Ti:sapphire-laser gain curve is reported. The free-running Ti:sapphire laser had broadband laser emission from 750 to 790 nm. Injection at 727 nm resulted in essentially complete energy extraction at that wavelength in a 2.5-pm bandwidth matching the injection source.

Brockman, Philip↗
NASA NTRS1987

Measurement and analysis of cryogenic sapphire dielectric resonators and DROs

Presented are the experimental and computational results of a study on a new kind of dielectric resonator oscillator (DRO). It consists of a cooled, cylindrically symmetric sapphire resonator surrounded by a metallic shield and is capable of higher Q's than any other dielectric resonator. Isolation of fields to the sapphire by the special nature of the electromagnetic mode allows the very low loss of the sapphire itself to be expressed. Calculations show that the plethora of modes in such resonators can be effectively reduced through the use of a ring resonator with appropriate dimensions. Experimental results show Q's ranging from 3 x 10 to the 8th at 77 K to 10 to the 9th at 4.2 K. Performance is estimated for several types of DROs incorporating these resonators. Phase noise reductions in X-band sources are indicated at values substantially lower than those previously available.

Dick, G. J.↗
NASA NTRS1990

A modified pump laser system to pump the titanium sapphire laser

As a result of the wide tunability of the titanium sapphire laser NASA has sited it to be used to perform differential absorption lidar (DIAL) measurements of H2O vapor in the upper and lower troposphere. The titanium sapphire laser can provide a spectrally narrow (0.3 to 1.0 pm), high energy (0.5 to 1.0 J) output at 727, 762, and 940 nm which are needed in the DIAL experiments. This laser performance can be obtained by addressing the line-narrowing issues in a master oscillator and the high energy requirement in a fundamental mode oscillator. By injection seeding, the single frequency property of the master oscillator can produce a line narrow high energy power oscillator. A breadboard model of the titanium sapphire laser that will ultimately be used in NASA lidar atmospheric sensing experiment is being designed. The task was to identify and solve any problem that would arise in the actual laser system. One such problem was encountered in the pump laser system. The pump laser that is designed to pump both the master oscillator and power oscillator is a Nd:YLF laser. Nd:YLF exhibits a number of properties which renders this material an attractive option to be used in the laser system. The Nd:YLF crystal is effectively athermal; it produces essentially no thermal lensing and thermally induced birefringence is generally insignificant in comparison to the material birefringence resulting from the uniaxial crystal structure. However, in application repeated fracturing of these laser rods was experience. Because Nd:YLF rods are not commercially available at the sizes needed for this application a modified pump laser system to replace the Nd:YLF laser rod was designed to include the more durable Nd:YAG laser rods. In this design, compensation for the thermal lensing effect that is introduced because of the Nd:YAG laser rods is included.

Petway, Larry B.↗