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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Distributed Sapphire Fiber Bragg Gratings Based Thermal Profiling of Submerged Entry Nozzles

This research focuses on the application of sapphire fiber Bragg gratings (FBGs) for instrumentation in submerged entry nozzles (SEN) within the steelmaking industry. The SEN is pivotal for transferring molten steel from a tundish to a mold, while preventing the infiltration of oxygen and nitrogen from the surrounding environment. Maintaining optimal flow conditions in the mold is crucial for ensuring casting process stability and maintaining high quality steel. Sapphire FBG sensors have been instrumented in SENs to enable distributed thermal mapping for monitoring the health of the SEN. The optical sensor comprises three cascaded sapphire FBGs inscribed using femtosecond laser technology into a one-meter-long sapphire crystalline fiber. The sensor underwent characterization in a laboratory setting up to 1600°C and was tested for long-term stability over 40 hours under extreme environmental conditions. The coupling between silica and sapphire fibers was investigated and implemented during sensor packaging. Here, the sensor successfully captured the pre-heat sequence of the SEN in real-world steelmaking operations. Compared to conventional thermocouples, sapphire FBG sensors demonstrated exceptional efficiency and precision. They offer potential benefits such as increased productivity, reduced energy consumption, and minimized carbon footprint in the steel industry.

Sapphire Fiber Bragg Grating↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2026

Sapphire Substrate Trenching to Advance Superconducting High-Coherence Quantum Devices

Achieving longer coherence times in superconducting qubits is essential for advancing quantum information processing and enabling scalable quantum computing. This work presents an innovative fabrication strategy focused on sapphire trenching of the substrate of superconducting high-coherence quantum devices, developed by the SQMS Nanofabrication Taskforce in collaboration with the materials characterization team. In this talk, we present a method to efficiently and consistently trench into the sapphire substrate, without compromising the surface roughness or profile of the etched sapphire. In the literature, trenching in the substrate has been shown to decrease losses, unwanted coupling and thermal stress. Sapphire’s strong covalent bonds make it harder to etch compared to silicon, yet it is more favorable for high-coherence quantum devices due to its lower dielectric losses. This innovative technique opens new possibilities for superconducting qubit fabrication: we fabricated high coherence qubit chips on sapphire substrates with trenching, to demonstrate that it will help pushing towards higher coherence times. By integrating this work with ongoing junction process optimization, design innovation, materials characterization and exploration, we outline a clear pathway toward transmon coherence times reaching millisecond scales and beyond.

Garattoni, S. [Fermilab]↗
DOE OSTI2025

Au assisted smooth ultrathin epitaxial ZnO film grown by pulsed laser deposition on sapphire(0001)

High quality ZnO has applications in photonics and electronics. Literature has shown that continuous, but rough ZnO film can be grown on sapphire substrate by pulsed laser deposition (PLD). In this work, ZnO and Au were co-deposited by PLD on sapphire(0001) substrates from a single ZnO target overlaid with an Au strip that serves as a catalyst. The reflection high-energy electron diffraction (RHEED) patterns show paired double stripes from sample of ZnO-Au where the difference of in-plane lattice parameters between ZnO and Au is 11.4 %. The two-dimensional (2D) reciprocal space maps constructed from azimuthal RHEED (ARHEED) patterns reveal parallel epitaxial relationship between ZnO and Au in the continuous ZnO-Au film on sapphire substrate. Transmission electron microscopy (TEM) cross section images and energy dispersive spectroscopy maps show a minute amount of Au nanocrystals distributed in the entire ultrathin ZnO film. Atomic force microscopy shows the root-mean-square roughness of the surface of ultrathin ZnO film with Au is in the sub-nm range. The ARHEED and TEM results show that a couple of atomic percentages of Au co-deposited with ZnO catalyzes the growth of smooth ultrathin epitaxial ZnO film.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Metal-organic chemical vapor deposition of MgGeN2 films on GaN and sapphire

MgGeN2 films were synthesized using metal-organic chemical vapor deposition on GaN/c-sapphire templates and c-plane sapphire substrates. Energy-dispersive x-ray spectroscopy was used to estimate the cation composition ratios. To mitigate magnesium evaporation, the films were grown at pyrometer temperature 745 °C with a wafer rotation speed of 1000 rpm. Growth rates were determined by fitting energy-dispersive x-ray spectroscopy spectra to film thicknesses using NIST DTSA-II software. The thickness estimates determined by this method were consistent with scanning transmission electron microscopy measurements done for selected samples. Scanning electron microscopy images revealed faceted surfaces indicative of a tendency toward three-dimensional growth. X-ray diffraction spectra confirmed that the films were highly crystalline and exhibited preferential orientation in alignment with the substrate. Atomic force microscopy measurements show that film thicknesses are consistent across samples grown on both GaN templates and sapphire substrates, with typical roughnesses around 10 nm. Transmittance spectra of films grown on double-side-polished sapphire substrates yielded band gaps of 4.28 ± 0.06 eV for samples exhibiting close-to-ideal stoichiometry. Comparison of the measured spectra with ab initio calculations are in good agreement both near the bandgap and at higher energies where excitation is into higher-lying bands. These findings provide insight into the growth and characterization of MgGeN2, contributing to the development of this material for potential applications in optoelectronics and power electronics.

Hu, Chenxi (ORCID:0000000236299660)↗
DOE OSTI2026

Enhanced sensitivity to trace 238 U impurity of sapphire via coincidence neutron activation analysis

Sapphire has mechanical and electrical properties that are advantageous for the construction of internal components of radiation detectors such as time projection chambers and bolometers. However, it has proved difficult to assess its 232 Th and 238 U content down to the picogram per gram level. Here, this work reports an experimental verification of a computational study that demonstrates 𝛾⁢𝛾 coincidence counting, coupled with neutron activation analysis (NAA), can reach ppt sensitivities. Combining results from 𝛾⁢𝛾 coincidence counting with those of earlier single-𝛾 counting based NAA shows that a sample of Saint Gobain sapphire has 232 Th and 238 U concentrations of <0.26 ppt and <2.3 ppt, respectively; the best constraints on the radiopurity of sapphire.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2025

Robust Avalanche (1.5 kV, 2 kA/cm²) in Vertical GaN Diodes on Patterned Sapphire Substrate

The lack of avalanche capability is a key limitation of current lateral GaN devices. Despite the report of avalanche in vertical GaN-on-GaN devices, the high wafer cost hinders device commercialization. Here, in this work, we demonstrate a circuit-level avalanche in vertical GaN diodes on low-cost patterned sapphire substrate (PSS), with the avalanche voltage (1.57 kV) and avalanche current density (>2 kA/cm 2 ) both being the highest reported in GaN devices on foreign substrates. The PSS enables a lower dislocation density than conventional sapphire substrate and is employed in high-voltage GaN devices for the first time. The avalanche voltage in the circuit test reaches 98% of the parallel-plane limit, further affirming that near-ideal avalanche breakdown can be realized on GaN devices on foreign substrates. These results show the promise of the GaN-on-PSS platform for low-cost, robust power devices.

42 ENGINEERING↗
NASA NTRS1995

Bend Properties of Sapphire Fibers at Elevated Temperatures: Bend Survivability - 1

The effect of temperature on the bend radius that a c-axis-oriented sapphire fiber can withstand was determined for fibers of various diameter. Bend stress rupture tests were performed for times of 1-100 h and temperatures of 300-1700 C. Fibers would survive the bend test undeformed, would fracture or would deform. The bend survival radius was determined to be the radius above which no fibers fractured or deformed for a given time-temperature treatment. It was found that the ability of fibers to withstand curvature decreases substantially with time and increasing temperature and that fibers of smaller diameter (46-83 micron) withstood smaller bend radii than would be expected from just a difference in fiber diameter when compared with the bend results of the fibers of large diameter (144 micron). This was probably due to different flaw populations, causing high temperature bend failure for the tested sapphire fibers of different diameters.

Sapphire↗
DOE OSTI2025

Three-dimensional characterization of modifications in sapphire exposed to laser-induced damage using multimodal spectral microimaging

Sapphire (Al 2 O 3 ) is a commonly used dielectric material with many applications in lasers and optical systems. Owing to its high resistivity to laser induced damage, it is particularly suitable for use in high power laser systems. This work focuses on developing techniques to characterize material modifications in sapphire. These techniques were applied following localized laser induced ablation, commonly referred to as laser-damage, resulting from exposure to single 100-ps and 6-ns pulses. Measurements of fluorescence-based piezospectroscopy and confocal Raman microscopy were performed with spatial resolution on the order of 1 μ m. Raman microscopy reveals that the relaxation of material exposed to the rapid laser heating, elastic and viscoplastic deformation, melting, and solidification leads to the formation of a polycrystalline material phase. In addition, narrowband fluorescence lines, referred to as R 1 and R 2 , exhibit pressure-sensitive changes to their spectral profiles, allowing 3D internal stresses to be recorded with spatial resolution of the order of a few micrometers.

Laser-damage↗
DOE OSTI2025

Epitaxial growth of conducting perovskite SrTiO3 on (0001) c-axis sapphire using a γ-Al2O3 intermediate layer

Epitaxial growth of complex oxides on large-area wafers, such as sapphire and silicon, represents a key step toward scalable oxide device production. Solid phase epitaxy allows the synthesis of γ-Al 2 O 3 on α-Al 2 O 3 and provides a template with a matched lattice constant and appropriate cubic symmetry for subsequent heteroepitaxial growth of perovskite complex oxides. Nb-doped SrTiO 3 thin films were deposited epitaxially on (111)-oriented γ-Al 2 O 3 intermediate layers on (0001) c-axis-oriented sapphire α-Al 2 O 3 crystals using pulsed laser deposition. The Nb:SrTiO 3 thin films with a thickness of 53 nm, grown at 700 °C on γ-Al 2 O 3 , reached fully relaxed lattice parameters and were epitaxially oriented with respect to the substrate. Nb:SrTiO 3 layers deposited using identical deposition conditions directly on α-Al 2 O 3 , without the γ-Al 2 O 3 intermediate layer, were polycrystalline. The sheet conductivity of Nb:SrTiO 3 grown on γ-Al 2 O 3 /α-Al 2 O 3 is more than ten times higher than that of Nb:SrTiO 3 grown directly on α-Al 2 O 3 without the γ-Al 2 O 3 layer. The results point to new directions for the integration of (111)-oriented pseudocubic perovskite complex oxides and the integration of epitaxial complex oxides over larger areas using α-Al 2 O 3 single-crystal substrates.

Atomic force microscopy↗
DOE OSTI2025

Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onset of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Origins of radiation-induced optical attenuation in neutron-irradiated single-crystal sapphire at elevated temperatures

Sapphire (α-Al 2 O 3 ) is a candidate fiber-optic sensor material for extreme temperature environments, potentially including those of nuclear reactors. However, its optical transmission under high-dose neutron irradiation is not well understood compared with that of conventional fused silica. This study examined dimensional changes, optical transmission, and irradiation-induced defects in neutron-irradiated α-Al 2 O 3 at temperatures of 298 °C to 688 °C and doses of 3.2 to 12 dpa. Although previous studies attributed radiation-induced attenuation (RIA) at the highest irradiation temperatures to increased optical scattering from radiation-induced voids, our findings indicate that scattering from neither voids nor dislocation loops can explain the measured attenuation. Instead, absorption due to aluminum vacancy centers appears more likely based on a comparison of the spectral features of the measured optical attenuation with previous literature. Significant c-axis swelling (5.51 % ± 0.83 %) was observed in the 12 dpa, 592 °C irradiated sample, much higher than earlier measurements, suggesting temperature sensor drift of 543 °C to 1,140 °C. Void patterning was predominantly observed along the a-axis, differing from previous studies on polycrystalline samples, which showed c-axis patterning. Dislocation loops evolved into network dislocations with increasing temperature and dose; voids formed within these structures, showing no size or density changes, indicating an atypical growth mechanism.

Neutron irradiation↗
DOE OSTI2026

Machining-inducted residual strain and ductile-brittle transition in sapphire revealed by X-ray nanoprobe diffraction microscopy

Hard X-ray nanoprobe diffraction microscopy is employed to investigate machining-induced residual lattice strain in single-crystal sapphire following ultra-precision orthogonal plunge cutting. In this study, tilt-series and single-angle acquisition strategies are systematically compared to evaluate their capability for resolving lattice variations associated with the machining process. An analytical framework is developed to enable the efficient and reliable extraction of strains, which serve as strain-based indicators of changes in the dominant deformation mechanism. The measured high-dimensional strain exhibits spatial heterogeneity and systematic evolution along the cutting path, consistent with deformation-regime changes from ductile response to crack-prone behavior.

Liang, Rui↗
DOE OSTI2025

Chemistry and Interfacial Structure Promoting Quasi-van der Waals Epitaxial Growth of WS 2 Nanosheets on Sapphire for Prospective Application in Field-Effect Transistors

How do chemical and structural modifications to the supporting crystal surface affect the subsequent van der Waals (vdW) or quasi(Q)-vdW epitaxial growth of 2D nanocrystals? Developing an atomic-scale picture of such an interfacial system is crucial for understanding its impact on the physical and chemical properties of the supported 2D materials. The elucidation of the interfacial structure and chemistry needed to promote the Q-vdW epitaxial growth of 2D tungsten disulfide (WS 2 ) nanocrystals contributes to the growth mechanism understanding, thus pushing forward the integration of such atomically thin semiconductors toward real field-effect transistor applications. In addition to an atomic-force microscopy top view, we showcase a combination of X-ray techniques for a top-to-bottom investigation of the complexities of the buried interface structures. Furthermore, this approach uses X-ray photoelectron spectroscopy, X-ray standing wave excited X-ray fluorescence, and crystal truncation rod scattering to produce a highly resolved chemical-state-specific 3D atomic map for the extended interface structure of WS 2 /α-Al 2 O 3 (001). Employing these detailed analysis methods, along with density functional theory to further refine the picoscale structure, we demonstrate how two different types of interface engineering during the pregrowth stage lead to significant differences in the chemical and structural modifications to the terminal surface of c-face sapphire, which in turn leads to substantial differences in the submonolayer growth of supported WS 2 2D nanocrystals in terms of lateral domain sizes, epitaxial registry, vdW gaps, and stability.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Silicon-On-Sapphire Metasurfaces Generate Arrays of Dark and Bright Traps for Neutral Atoms

We demonstrated crystalline silicon-on-sapphire (c-SOS) metasurfaces that convert a Gaussian beam into arrays of complex optical traps, including arrays of optical bottle beams that trap atoms in dark regions interleaved with bright tweezer arrays. The high refractive index and indirect band gap of crystalline silicon make it possible to design high-resolution near-infrared (λ > 700 nm) metasurfaces that can be manufactured at scale using CMOS-compatible processes. Compared with active components like spatial light modulators (SLMs) that have become widely used to generate trap arrays, metasurfaces provide an indefinitely scalable number of pixels, enabling large arrays of complex traps in a very small form factor, as well as reduced dynamic noise. To design metasurfaces that can generate three-dimensional bottle beams to serve as dark traps, we modified the Gerchberg-Saxton algorithm to enforce complex-amplitude profiles at the focal plane of the metasurface and to optimize the uniformity of the traps across the array. We fabricated and measured c-SOS metasurfaces that convert a Gaussian laser beam into arrays of bright traps, dark traps, and interleaved bright/dark traps.

Gerchberg-Saxton↗
DOE OSTI2026

Impact of absorption due to zero-field splitting on loss in dielectrics: A case study in sapphire

The coherence times of superconducting qubits are limited by loss mechanisms, whose microscopic origins have remained elusive. We propose a mechanism caused by transitions between zero-field-split states of paramagnetic impurities or defects. We derive the absorption cross section for a magnetic dipole transition and apply it to calculate the bulk loss tangent. For Cr, Fe, and V impurities in sapphire, we find loss tangents at 4.5 GHz in the range of 10 −9 –10 −8 , comparable to the loss measured in experiments. This value suggests that magnetic loss may be a limiting factor in the coherence times of superconducting qubits.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Intermodal microwave-to-optical transduction using silicon-on-sapphire optomechanical ring resonator

Optomechanical and electro-optomechanical systems have emerged as one of the most promising approaches for quantum microwave-to-optical transduction to interconnect distributed quantum modalities for scaling the quantum systems. These systems use suspended structures to increase mode overlap and mitigate loss to achieve high efficiency. However, the suspended design’s poor heat dissipation under strong drive limits the ultimate efficiency. Here, we demonstrate an unsuspended optomechanical ring resonator (OMR) based on the silicon-on-sapphire (SOS) platform for microwave-to-optical frequency conversion. The OMR achieves a triply resonant optical-to-optical conversion with an enhanced coupling rateG b = 3.6 gigahertz per square-root milliwatt at a peak conversion efficiency of 1.2% with 3.6-milliwatt microwave drive power and a microwave-to-optical conversion efficiency of 1.5 × 10 −5 at 10-milliwatt optical drive power. Our results show that the unsuspended SOS platform, which mitigates the thermal effect and is compatible with superconducting qubits, is a promising platform for optomechanical circuitry and quantum transduction.

Science & Technology - Other Topics↗
DOE OSTI2025

Segregation of Chromium and Titanium in Sapphire Optical Fiber Grown via the Laser-Heated Pedestal Growth Technique

Our research involves growth of single crystal (SC) optical fibers to be used for sensing applications in harsh environments. Silica optical fibers are an affordable and reliable option for a wide variety of applications including optical fiber sensors and fiber lasers. However, for applications in harsh environments, such as high temperatures, radioactivity, corrosivity, etc., silica fibers are not suitable due to their instability under such conditions. Fibers composed of SC materials such as sapphire and YAG are mechanically, chemically, and thermally more robust to harsh conditions, and thus are more appropriate for sensing applications in environments such as nuclear reactors, jet engines, and boiler. However, SC fibers grown via the laser-heated pedestal growth (LHPG) technique do not intrinsically have a functional cladding layer. A cladding layer is required to reduce the modal volume for distributed sensing applications, to reduce frustrated total internal reflection induced by surface contact of the fiber in certain applications, and to improve transmissivity. Our lab investigates introduction of dopant materials during LHPG to induce an effective core-cladding structure while maintain the crystallinity of the host material. This process results in optical fiber that is not only robust to harsh environments, but also has improved optical properties for distributed sensor applications.

distributed sensing↗