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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1979

Power combining in an array of microwave power rectifiers

This work analyzes the resultant efficiency degradation when identical rectifiers operate at different RF power levels as caused by the power beam taper. Both a closed-form analytical circuit model and a detailed computer-simulation model are used to obtain the output dc load line of the rectifier. The efficiency degradation is nearly identical with series and parallel combining, and the closed-form analytical model provides results which are similar to the detailed computer-simulation model.

Gutmann, R. J.↗
NASA NTRS1984

Ohmic Versus Rectifying Contacts of Au to N-gaas by Ion Sputtering

Results of investigations of argon ion sputtering of heavily doped n-GaAs are compared with those obtained from studies of Au/low doping density n-GaAs contacts. The Au contact on Si-doped GaAs was nearly ohmic when the surface contamination (carbon and oxides) was reduced prior to deposition by chemical cleaning. However, when ion sputtering was used in situ to clean the surface, rectifying contact was produced whose barrier height varied with the energy of the sputtering ion. It was found that ion sputtering of GaAs doped to more than 3 x 10 to the 18th power/cu may be used to change ohmic contact to rectifying contacts. The barrier height may be changed by changing the ion energy. The behavior results from the sputter creation of deep level acceptor states at the GaAs surface. Annealing after sputtering can restore the contact to nearly an ohmic character.

Wang, Y. X.↗
NASA NTRS1989

Synchronous Half-Wave Rectifier

Synchronous rectifying circuit behaves like diode having unusually low voltage drop during forward-voltage half cycles. Circuit particularly useful in power supplies with potentials of 5 Vdc or less, where normal forward-voltage drops in ordinary diodes unacceptably large. Fabricated as monolithic assembly or as hybrid. Synchronous half-wave rectifier includes active circuits to attain low forward voltage drop and high rectification efficiency.

Rippel, Wally E.↗
NASA NTRS1989

Design and test of a 2.25-MW transformer rectifier assembly

A new 2.25-MW transformer rectifier assembly was fabricated for DSS-13 at Goldstone, California. The transformer rectifier will provide constant output power of 2.25 MW at any voltage from 31 kV to 125 kV. This will give a new capability of 1 MW of RF power at X-band, provided appropriate microwave tubes are in the power amplifier. A description of the design and test results is presented.

Cormier, R.↗
NASA NTRS1993

Self-rectifying electron beam melter for pendant-drop containerless processing

A self-rectifying electron beam melting technique is described. Utilizing an ac power supply, in contrast to the more usual dc supply, the in situ self-rectifying approach offers a simple and very inexpensive means of producing metallic pendant drops for use in containerless melt-processing experiments.

Pyun, D. S.↗
NASA NTRS2004

Simulation and Analysis of Three-Phase Rectifiers for Aerospace Power Applications

Due to the nature of planned planetary missions, fairly large advanced power systems are required for the spacecraft. These future high power spacecrafts are expected to use dynamic power conversion systems incorporating high speed alternators as three-phase AC electrical power source. One of the early design considerations in such systems is the type of rectification to be used with the AC source for DC user loads. This paper address the issues involved with two different rectification methods, namely the conventional six and twelve pulses. Two circuit configurations which involved parallel combinations of the six and twelve-pulse rectifiers were selected for the simulation. The rectifier s input and output power waveforms will be thoroughly examined through simulations. The effects of the parasitic load for power balancing and filter components for reducing the ripple voltage at the DC loads are also included in the analysis. Details of the simulation circuits, simulation results, and design examples for reducing risk from damaging of spacecraft engines will be presented and discussed.

Truong, Long V.↗
NASA NTRS2004

Self-contained sub-millimeter wave rectifying antenna integrated circuit

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Siegel, Peter H.↗
NASA NTRS1965

A cdse-znse thin film rectifier.

Properties of thin film rectifier formed on glass substrate by vacuum-depositing cadmium selenide- zinc selenide film between two deposited gold electrodes

CADMIUM SELENIDE↗
DOE OSTI2022

Dynamic characterization and performance evaluation of a 10-kW power take-off with mechanical motion rectifier for wave energy conversion

The power take-off (PTO) is a key component for wave energy converters. In this paper, a compact PTO with mechanical motion rectification rated at 10 kW is designed and prototyped, and characterized. A piecewise nonlinear dynamic model is established to describe its unique dynamic property. A linear hydraulic actuator is adopted in lab testing to drive the prototype and the unknown parameters of the dynamic model are identified. Further verification shows that the model can predict the dynamic performance of the PTO well. The test results show that the mechanical motion rectifier-based PTO can achieve overall energy transfer efficiency as high as 65% in regular waves even when the generator is working below the rated electric load and speed. In the irregular wave test, the PTO achieved the overall energy transfer efficiency of 54%, and the peak-to-average ratio acquired during the test is 12.5.

16 TIDAL AND WAVE POWER↗
DOE OSTI2023

Rectified Rotational Dynamics of Mobile Inclusions in Two-Dimensional Active Nematics

We investigate the dynamics of mobile inclusions embedded in 2D active nematics. The interplay between the inclusion shape, boundary-induced nematic order, and autonomous flows powers the inclusion motion. Disks and achiral gears exhibit unbiased rotational motion, but with distinct dynamics. In comparison, chiral gear-shaped inclusions exhibit long-term rectified rotation, which is correlated with dynamics and polarization of nearby +1/2 topological defects. Furthermore, the chirality of defect polarities and the active nematic texture around the inclusion correlate with the inclusion’s instantaneous rotation rate. Inclusions provide a promising tool for probing the rheological properties of active nematics and extracting ordered motion from their inherently chaotic motion.

36 MATERIALS SCIENCE↗
NASA NTRS1966

Thin-film semiconductor rectifier has improved properties

Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.

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