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DC Grid Interface for the Integrated Generator–Rectifier Architecture in Wind Energy Systems
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A System Level Comparative Study of SecondarySide Rectifiers for UAV Wireless Power Transfer in High-Altitude Airborne Energy Platforms
Wireless power transfer (WPT) systems for unmanned aerial vehicles (UAVs) must satisfy stringent design requirements to ensure reliable operation under constraints related to efficiency, thermal performance, altitude, weight, and reliability, particularly in airborne and high-altitude environments. Thermal management becomes increasingly challenging at higher altitudes due to reduced air density, while reliability is strongly affected by the number and complexity of active components. The weight and compactness of secondary-side rectifiers directly impact UAV flight endurance and system integration, influencing energy consumption and payload allocation. These factors collectively define the practical feasibility of UAV WPT systems and guide rectifier topology selection. This paper presents a comparative and experimentally validated evaluation framework for secondary-side rectifiers under UAV-specific constraints. Three representative rectifier architectures are analyzed using component-based assessment of weight, thermal behavior, and reliability, together with experimental efficiency measurements obtained from a 1 kW WPT prototype. The results show that the single-switch active rectifier achieves the highest peak efficiency of approximately 93.2% and an overall efficiency of 91%, while also offering advantages in weight and reliability. The findings demonstrate how constraint-oriented analysis, combined with experimental validation, enables informed selection of secondary-side rectifiers for UAV wireless power transfer applications, including emerging airborne and high-altitude platforms.
Integrated rectifier-generator system for AC-to-DC conversion
This disclosure relates AC-to-DC rectification and power flow control of electrical power generators. An integrated rectifier-generator AC-DC conversion circuit and system are disclosed for providing a regulated DC output. The integrated rectifier-generator AC-DC conversion circuit and system may include serially stacked passive and active rectifiers connected to multiple AC ports of an electrical power generator driven by mechanical energy captured by an energy harvester. The integrated rectifier-generator AC-DC conversion circuit and system may be configured to perform active ripple control and a maximum power tracking from the energy harvester by controlling a fraction of an overall power that flow through the active rectifier.
Multilevel Switched-Capacitor AC–DC Step-Down Rectifier for Wireless Charging With Reduced Conduction Loss and Harmonic Content
In this paper, a wireless charging architecture employing a multilevel switched-capacitor (MSC) AC-DC rectifier is investigated. The proposed MSC rectifier features a multilevel design which is scalable to accommodate different power ratings and load ranges. The topology showcases advantages for wireless power transfer (WPT) systems in terms of compactness, efficiency, impedance tunability, and harmonic attenuation. The single-stage active topology is capable of varying its low-distortion staircase input voltage to tune the wireless power transfer system for high system-wide efficiency. A 7-level, 20 W prototype is used to verify the WPT loading and loss analysis. The prototype operates at 150 kHz with up to 3:1 step-down conversion ratio to an output voltage of 5.0 V. The experimental peak DC-to-DC efficiency is 93.8% and the rectifier peak efficiency is 98.3%. As a result. the rectifier demonstrates low waveform distortion and high efficiency across many WPT loading conditions, solidifying its place as a strong candidate for wireless power applications.
Control-inspired design and power optimization of an active mechanical motion rectifier based power takeoff for wave energy converters
Ocean waves have high energy density and are persistent and predictable. Yet, converting wave energy to a useable form remains challenging. A significant hurdle is the oscillatory nature of waves resulting in the alternating loads, which necessitate the use of rectification at some stage of the energy conversion. This research effort presents a novel design of active mechanical motion rectifier (AMMR) for the power takeoff (PTO), which provides enhanced controllability and better power performance when compared to passive mechanical motion rectifiers (MMR). Inspired by transistors used in synchronous electrical rectifiers, the proposed design uses controllable electromagnetic clutches in the mechanical transmission to allow active engagement-disengagement control; thus, rectifying the oscillatory motion into a unidirectional rotation for high energy conversion efficiency and allowing the generator in unidirectional rotation to control the bidirectional wave capture structure for maximizing the power output. A semi-analytical computational approach is developed to efficiently evaluate the optimal power achieved using the proposed AMMR-based PTO and active control. It is found that the AMMR-based PTO design yields a higher optimal power than the previous passive MMR design across the wave spectrum. The influences of generator inertia and reactive power are discussed. Furthermore, the effects of control parameters on the power output and the optimal trajectories are analyzed. Wave tank tests with the AMMR prototype demonstrated the effectiveness of AMMR based PTO design and validated the numerical analysis.
Integrated silicon carbide diode rectifier circuits
An integrated silicon carbide rectifier circuit with an on chip isolation diode. The isolation diode can be a channel-to-substrate isolation diode or a channel to channel isolation diode. the circuit teaches an integrated diode rectification circuit for use with a two phase center tap transformer having a first voltage output, a second voltage output, and a center tap output with a single chip having a first half-wave rectifier connected to the first voltage output, a second half-wave rectifier connected to the second voltage output, and a floating substrate connection connected to the center tap output and an on chip first channel-to-substrate isolation diode electrically connected between the first half-wave rectifier and the floating substrate.
Breakdown characteristics analysis of kV-class vertical GaN PIN rectifiers by wafer-level sub-bandgap photoluminescence mapping
This work reports analysis of the reverse-bias breakdown characteristics of homojunction gallium nitride (GaN) p–i–n (PIN) rectifiers fabricated on bulk GaN substrates. Sub-bandgap photoluminescence mapping at room temperature as a contactless, non-destructive wafer inspection method was performed to analyze the impact of material properties on grown GaN PIN diodes and to study the correlation between defect types and breakdown characteristics of vertical GaN PIN rectifiers. Under the sub-bandgap excitation, yellow luminescence is dominant. The premature breakdown characteristics of the fabricated kV-class vertical GaN PIN rectifiers with nitrogen-implanted floating guard rings are found to be associated with material defects and deep level complexes. Photoluminescence mapping has demonstrated its effectiveness in quantitative analysis of dislocations and other types of defects.
Feedback loop compensates for rectifier nonlinearity
Signal processing circuit with two negative feedback loops rectifies two sinusoidal signals which are 180 degrees out of phase and produces a single full-wave rectified output signal. Each feedback loop incorporates a feedback rectifier to compensate for the nonlinearity of the circuit.
Effects of 22 MeV protons on single junction and silicon controlled rectifiers
The effects of 22-MeV protons on various types of silicon single junction and silicon controlled rectifiers were investigated. The results show that low-leakage devices and silicon controlled rectifiers are the most susceptable to radiation damage. There are also differences noted between single junction rectifiers of the same type made by different manufacturers, which emphasizes the need for better selection of devices used in spacecraft.
Modelling a single phase voltage controlled rectifier using Laplace transforms
The development of a 20 kHz, AC power system by NASA for large space projects has spurred a need to develop models for the equipment which will be used on these single phase systems. To date, models for the AC source (i.e., inverters) have been developed. It is the intent of this paper to develop a method to model the single phase voltage controlled rectifiers which will be attached to the AC power grid as an interface for connected loads. A modified version of EPRI's HARMFLO program is used as the shell for these models. The results obtained from the model developed in this paper are quite adequate for the analysis of problems such as voltage resonance. The unique technique presented in this paper uses the Laplace transforms to determine the harmonic content of the load current of the rectifier rather than a curve fitting technique. Laplace transforms yield the coefficient of the differential equations which model the line current to the rectifier directly.
Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized
The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.
1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floating Guard Rings
Here, this work reports on the fabrication and properties of a homojunction gallium nitride (GaN) p-i-n (PIN) rectifier fabricated on a free-standing GaN substrate. Uniform device performance is achieved with breakdown voltage (BV) >1.2 kV and low ON-resistance × area ( R ON A ). The statistics of the BV measurements show 58.5% of devices achieve BV >1.3 kV, and 71.1% of devices achieve BV >1.2 kV, as attributed to high quality and control in both epitaxial growth and device process. At room temperature, R ON A is 0.23 mΩ∙ cm 2 at a current density ( J ) of 6.9 kA/cm2. The corresponding Baliga’s figure of merit is >5.97 GW/cm 2 . Temperature-dependent reverse I – V measurements were performed and show a positive temperature coefficient of 0.42 V/K, indicating the avalanche capability of reverse breakdown. Further analysis with the Poole-Frenkel model on the temperature-dependent measurement suggested that a trap-assisted tunneling process contributed to the reverse leakage current. Floating guard rings (FGRs) formed by nitrogen implantation serve as an effective edge termination technique in these GaN PIN rectifiers, resulting in uniform performance in both forward and reverse bias.
Molecular surface programming of rectifying junctions between InAs colloidal quantum dot solids
Heavy-metal-free III–V colloidal quantum dots (CQDs) show promise in optoelectronics: Recent advancements in the synthesis of large-diameter indium arsenide (InAs) CQDs provide access to short-wave infrared (IR) wavelengths for three-dimensional ranging and imaging. In early studies, however, we were unable to achieve a rectifying photodiode using CQDs and molybdenum oxide/polymer hole transport layers, as the shallow valence bandedge (5.0 eV) was misaligned with the ionization potentials of the widely used transport layers. This occurred when increasing CQD diameter to decrease the bandgap below 1.1 eV. Here, we develop a rectifying junction among InAs CQD layers, where we use molecular surface modifiers to tune the energy levels of InAs CQDs electrostatically. Previously developed bifunctional dithiol ligands, established for II-VI and IV-VI CQDs, exhibit slow reaction kinetics with III-V surfaces, causing the exchange to fail. Here, we study carboxylate and thiolate binding groups, united with electron-donating free end groups, that shift upward the valence bandedge of InAs CQDs, producing valence band energies as shallow as 4.8 eV. Photophysical studies combined with density functional theory show that carboxylate-based passivants participate in strong bidentate bridging with both In and As on the CQD surface. The tuned CQD layer incorporated into a photodiode structure achieves improved performance with EQE (external quantum efficiency) of 35% (>1 μm) and dark current density < 400 nA cm -2 , a >25% increase in EQE and >90% reduced dark current density compared to the reference device. This work represents an advance over previous III-V CQD short-wavelength IR photodetectors (EQE < 5%, dark current > 10,000 nA cm -2 ).
Secondary-Side Active Rectifier Synchronization and Control in LCC-LC Compensated Inductive Power Transfer Systems
This paper proposes a communication-less synchronization and output power control strategy for LCC-LC compensated inductive power transfer systems with a secondaryside active rectifier. By replacing the passive rectifier with an active bridge, the proposed architecture eliminates the need for a separate secondary-side DC-DC converter and enables direct regulation of battery power. The key challenge in such a system is achieving robust synchronization of the secondary active bridge with the primary inverter without access to primary-side signals. To address this issue, the secondary-side variables are analyzed and the current through the secondary series inductor is identified as a load-independent synchronization variable with a fixed phase relationship to the primary excitation. A fixed-frequency second order generalized (SOGI)-based phase locked loop (PLL) is used to estimate the switching phase and frequency, and a phase-shift-based output power controller is developed using a phasor-transformer model of the active bridges. A modified control formulation is further introduced to remove phase-dependent loop-gain variation and simplify controller design. Simulation results validate the proposed method under both fixed and varying switching-frequency conditions, demonstrating successful frequency tracking from 82 kHz to 88 kHz and accurate output power regulation over a wide operating range. The proposed method offers a compact and effective solution for high-power IPT systems by enabling secondary-side synchronization and control without wireless communication or an additional DC-DC conversion stage.
Precision rectifier with FET switching means Patent
Precision full wave rectifier circuit for rectifying incoming electrical signals having positive or negative polarity with only positive output signals
Automatic method of measuring silicon-controlled-rectifier holding current
Development of automated silicon controlled rectifier circuit for measuring minimum anode current required to maintain rectifiers in conducting state is discussed. Components of circuit are described and principles of operation are explained. Illustration of circuit is provided.
Power combining in an array of microwave power rectifiers
This work analyzes the resultant efficiency degradation when identical rectifiers operate at different RF power levels as caused by the power beam taper. Both a closed-form analytical circuit model and a detailed computer-simulation model are used to obtain the output dc load line of the rectifier. The efficiency degradation is nearly identical with series and parallel combining, and the closed-form analytical model provides results which are similar to the detailed computer-simulation model.