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At least 37 records · Page 2

All sources NASA NTRS DOE OSTI

DOE OSTI2020

Selective-Area Remote Epitaxy of ZnO Microrods Using Multilayer–Monolayer-Patterned Graphene for Transferable and Flexible Device Fabrications

Here, selective-area remote epitaxy (SA-REpi) is demonstrated for fabricating mechanically releasable position-controlled ZnO microrod (MR) arrays from donor wafers in an arrayed form. Intaglio-patterned graphene, consisting of basal single-layer graphene (SLG) overlayered with multilayer graphene (MLG) patterned with perforated holes, is transferred onto a GaN/Al 2 O 3 wafer on which the hydrothermal synthesis is performed for growing ZnO MRs. The basal SLG area exposed through the MLG pattern yields ZnO MRs, whereas the MLG plateau inhibits the growth. The noncovalent remote epitaxial heterointerface enables the release of the MR overlayer in the arrayed form, and the original source wafer is refurbished for reproducibly repeating the SA-REpi. Density-functional theory calculations suggest that localized surface charge density is induced on the surface of SLG by the underlying GaN across ultrathin SLG, which possibly provides a driving force for precursor adatoms and the following remote epitaxy of ZnO. In contrast, the induction of the charge density redistribution does not clearly occur through MLG; so, that keeps the surface of MLG nearly charge-neutral. The diameter and spacing of ZnO MRs are controlled in a designed way by changing the pattern geometries. High-resolution scanning transmission electron microscopy reveals the remote heteroepitaxial relationship at an atomic level. The remote epitaxy is expected to provide an ideal platform to transfer the addressable spatial arrays of nano- or micro-architecture semiconductor components to arbitrary target surfaces directly after the growth without the assembly procedures.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Effect of Scale-Up on Mass Transfer and Flow Patterns in Liquid–Liquid Flows Using Experiments and Computations

Not provided.

Engineering↗

DOE OSTI2020

High registration particles-transferring system

Disclosed herein are implementations of a particles-transferring system, particle transferring unit, and method of transferring particles in a pattern. In one implementation, a particles-transferring system includes a first substrate including a first surface to support particles in a pattern, particle transferring unit including an outer surface to be offset from the first surface by a first gap, and second substrate including a second surface to be offset from the outer surface by a second gap. The particle transferring unit removes the particles from the first surface in response to the particles being within the first gap, secures the particles in the pattern to the outer surface, and transports the particles in the pattern. The second substrate removes the particles in the pattern from the particle transferring unit in response to the particles being within the second gap. The particles are to be secured in the pattern to the second surface.

36 MATERIALS SCIENCE↗

DOE OSTI2023

High registration particles-transferring system

Wang, Yunda↗

DOE OSTI2020

Exact and fast calculation of the X-ray pair distribution function

A fast and exact algorithm to calculate the powder pair distribution function (PDF) for the case of periodic structures is presented. The new algorithm calculates the PDF by a detour via reciprocal space. The calculated normalized total powder diffraction pattern is transferred into the PDF via the sine Fourier transform. The calculation of the PDF via the powder pattern avoids the conventional simplification of X-ray and electron atomic form factors. It is thus exact for these types of radiation, as is the conventional calculation for the case of neutron diffraction. The new algorithm further improves the calculation speed. Additional advantages are the improved detection of errors in the primary data, the handling of preferred orientation, the ease of treatment of magnetic scattering and a large improvement to accommodate more complex instrumental resolution functions.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Method for lithograghic patterning of sensitive materials

Methods for patterning highly sensitive materials, such as organic materials, organic semiconductors, biomolecular materials, and the like, with photolithographic resolution are disclosed. In some embodiments, a germanium mask (304) is formed on the surface of the sensitive material (302), thereby protecting it from subsequent processes that employ harsh chemicals that would otherwise destroy the sensitive material (302). A microlithography mask (306) is patterned on the germanium mask layer (304), after which the germanium exposed by the microlithography mask (306) is removed by dissolving it in water. After transferring the pattern of the germanium mask (304) into the sensitive material (302), the germanium and microlithography masks (304, 306) are completely removed by immersing the substrate in water, which dissolves the remaining germanium and lifts off the microlithography mask material. As a result, the only chemical to which the sensitive material (302) is exposed during the patterning process is water, thereby mitigating or avoiding damage to the material (302).

36 MATERIALS SCIENCE↗

DOE OSTI2024

Fabrication of model ultrafiltration membranes with uniform, high aspect ratio pores

Here, in this manuscript, we report the facile fabrication of large-area model membranes with highly uniform and high aspect ratio pores with diameters <20 nm. These membranes are useful for fundamental investigations of separation by size exclusion in the ultrafiltration regime, where species to be separated from solution have dimensions of 1–100 nm. Such investigations require membranes with narrow pores and high aspect ratios such that the Hagen–Poiseuille equation is followed, enabling well-known models such as the hindered transport model to be evaluated and other affecting factors to be ignored. We demonstrate that the sub-20 nm pores in the membrane are of sufficiently high aspect ratio such that water flux through the membrane is consistent with the Hagen–Poiseuille equation. The fabrication relies on self-assembling block copolymers to form uniform, densely packed patterns with sub-20 nm resolution, sequential infiltration synthesis to convert the block copolymer in situ into a mask with adequate contrast to etch pores with an aspect ratio >5, and low-resolution photolithography to transfer the pattern over a large area into a silicon nitride membrane. Model membranes with narrow pore-size distribution fabricated in this way provide the means to investigate parameters that impact size-selective ultrafiltration separations such as the relationships between solute or particle size and pore size, their distributions, and rejection profiles, and, therefore, test the validity or limits of separation models.

Chen, Wen↗

DOE OSTI2021

Super-Resolution Photothermal Patterning in Conductive Polymers Enabled by Thermally Activated Solubility

Doping induced solubility control (DISC) patterning is a recently developed technique which uses the change in polymer solubility upon doping, along with an optical dedoping process, to achieve high resolution optical patterning. DISC patterning is remarkable because the process resolution exceeds the linear Abbe’s diffraction limit, however, no mechanism has been proposed to explain such high resolution. Here, we use diffraction to spatially modulate the light intensity and determine the dissolution rate, revealing a superlinear dependence on light intensity, which yields features that are sharper than the profile of the writing photomask. This rate law is independent of wavelength, indicating that patterning resolution is not dominated by an optical dedoping reaction, as was previously proposed. Instead we show here that the optical patterning mechanism is primarily controlled by the thermal profile generated by the laser. To quantify this effect, the thermal profile and dissolution rate are modeled using a finite-element model and compared against patterned line cross sections as a function of wavelength, laser intensity, and dwell time. Our model reveals that although the laser-generated thermal profile is broadened considerably beyond the lasers resolution, the highly temperature dependent dissolution rate results in selective dissolution near the peak of the thermal profile. Therefore, the key factor in achieving super-resolution patterning is a strongly temperature dependent dissolution rate|a common feature of many polymers. In addition to suggesting several routes to improved resolution, our model also demonstrates that doping is not required for optical patterning of conjugated polymers, as was previously believed. Instead, we demonstrate that superlinear resolution optical patterning is attainable in any conjugated polymer simply by tuning the solvent quality during patterning, thus extending the applicability of our method to a wide class of materials. Here, we demonstrate the generality of photothermal patterning by writing sub-400 nm features into undoped Pff-BT4T-2OD.

36 MATERIALS SCIENCE↗

DOE OSTI2024

High-resolution chemical patterns from negative tone resists for the integration of extreme ultraviolet patterns of metal-oxide resists with directed self-assembly of block copolymers

Extreme ultraviolet (EUV) lithography faces significant challenges in designing suitable resist materials that can provide adequate precision, while maintaining economically viable throughput. These challenges in resist materials have led to printing failures and high roughness in EUV patterns, compromising the performance of semiconductor devices. Integrating directed self-assembly (DSA) of block copolymers (BCPs) with EUV lithography offers a promising solution because, while the BCPs register to the EUV-defined chemical guiding pattern, the thermodynamically determined structures of the BCPs automatically rectify defects and roughness in the EUV pattern. Despite the superior resolution of metal-oxide EUV resists (MORs), their application to DSA is limited by the difficulty in converting them into chemical patterns that allow effective transfer of the rectified patterns of DSA films into inorganic materials. To address this challenge, this study introduces a novel strategy for fabricating chemical patterns using hydrogen silsesquioxane (HSQ), a high-resolution negative tone inorganic resist, as a model system for MORs. Initially, a sacrificial Cr pattern is generated from HSQ patterns via reactive ion etching. The sacrificial Cr pattern is converted into a chemical pattern by first grafting a water-soluble polyethylene oxide brush onto the substrate, then wet etching the Cr, and finally grafting nonpolar polystyrene brushes. Assembling polystyrene-block-poly(methyl methacrylate) on these patterns results in structures oriented and registered with the underlying pattern, achieving 24 nm full-pitch resolutions. In conclusion, this approach has the potential to integrate MOR patterns into the DSA process, thereby enabling the generation of high-quality sub-10 nm patterns with high-χ BCPs.

Atomic force microscopy↗

DOE OSTI2024

Dry etching of epitaxial InGaAs/InAlAs/InAlGaAs structures for fabrication of photonic integrated circuits

A dry etching process to transfer the pattern of a photonic integrated circuit design for high-speed laser communications is described. The laser stack under consideration is a 3.2-µm-thick InGaAs/InAlAs/InAlGaAs epitaxial structure grown by molecular beam epitaxy. The etching was performed using Cl2-based inductively-coupled-plasma and reactive-ion-etching (ICP-RIE) reactors. Four different recipes are presented in two similar ICP-RIE reactors, with special attention paid to the etched features formed with various hard mask compositions, in-situ passivations, and process temperatures. The results indicate that it is possible to produce high-aspect-ratio features with sub-micron separation on this multilayer structure. Additionally, the results of the etching highlight the tradeoffs involved with the corresponding recipes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2024

A new synthetic correlation electron cyclotron emission diagnostic for validating nonlinear gyrokinetic simulations of electron temperature turbulence

To validate nonlinear gyrokinetic simulations of electron temperature turbulence, the experimental correlation electron cyclotron emission (CECE) measurements are to be compared using a synthetic CECE diagnostic, which generates modeled CECE measurement quantities by implementing realistic measurement parameters (e.g., spatial and wavenumber resolutions, radial location, etc.) to nonlinear gyrokinetic simulations. In this work, we calculate the radial and vertical spatial and wavenumber transfer functions, which are defined by the electron cyclotron emission emissivity radial profile and vertical probing antenna pattern, respectively. These transfer functions are applied to nonlinear gyrokinetic simulations of electron temperature turbulence using the continuum gyrokinetic code. A simultaneous comparison of the experimental electron temperature turbulence power spectrum and root-mean-square (RMS) level, as well as the radial correlation length with the new synthetic CECE diagnostic at a core location ρ ∼ 0.75 in an L-mode DIII-D tokamak plasma, is presented. Here, the preliminary result shows that the synthetic CECE output underestimates the RMS level by ∼42% and overestimates the radial correlation length by ∼40%.

Cyclotron radiation↗

DOE OSTI2021

Liquid–Liquid Microfluidic Flows for Ultrafast 5-Hydroxymethyl Furfural Extraction

We study the effects of liquid–liquid flow patterns on the extraction of 5-hydroxymethyl furfural from the aqueous phase into an organic phase (methyl isobutyl ketone, ethyl acetate, and 2-pentanol) at ultrashort residence times of 0.2–20 s in a coiled capillary microchannel. Slug, droplet, slug-droplet, dispersed, parallel, annular, and irregular two-phase flow patterns are generated. We evaluate the extraction efficiency and the volumetric mass transfer coefficient via experiments and computational fluid dynamics (CFD). The CFD predictions are in quantitative agreement with the experimental data. The convective and diffusive contributions to the mass transfer of different flow patterns are analyzed. For all solvent pairs, the extraction efficiency varies irregularly with increasing flow rate due to changes in the mass transfer mechanism caused by a transition between flow regimes. Overall, we demonstrate >90% extraction efficiencies with high volumetric mass transfer coefficients ranging from 0.006 to 2.17 s–1. Furthermore, a merit index is defined to assess the trade-off between the fast mass transfer and the pressure drop in biphasic microchannels. In general, the mass transfer rate increases significantly at high flow rates at the expense of a high-pressure drop. Furthermore, the ethyl acetate/water irregular flow pattern is optimal due to a large throughput, extraction efficiency, and mass transfer coefficient, with a minimal pressure drop.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Segmented Microfluidic Flow Reactors for Nanomaterial Synthesis

Microfluidic reactors have remarkably promoted the synthesis and investigation of advanced nanomaterials due to their continuous mode and accelerated heat/mass transfer. Notably, segmented microfluidic flow reactors (SMFRs) are an important class of microfluidic reactors that have been developed to accurately manipulate nanomaterial synthesis by further improvement of the residence time distributions and unique flow behaviors. This review provided a survey of the nanomaterial synthesis in SMFRs for the aspects of fluid dynamics, flow patterns, and mass transfer among and within distinct phases and provided examples of the synthesis of versatile nanomaterials via the use of different flow patterns.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Measurement of Convective Heat Transfer Coefficients with Supercritical CO2 in Novel Additively Manufactured Helically Patterned Pin Fin Tubes Using the Wilson Plot Technique

This paper describes the measurement of convective heat transfer coefficients and friction factors for sCO2 flowing in pin-fin patterned pipes in the Heat Exchange and Experimental Testing (HEET) facility at the US DoE’s National Energy Technology Laboratory (NETL) in Morgantown, WV. The measurement procedures in the HEET rig were validated by conducting benchmark tests with smooth stainless-steel tube and comparing the results with published correlations for Nusselt number (Nu) and friction factor. Over typical Reynolds number range in sCO2, the measured Nu and friction factors were within 7% of classical correlations for smooth tube flow.The candidate pin fin patterned pipes were additively manufactured (AM) at the Oak Ridge National Laboratory. The pins were circular or elliptical in cross-section. Pin length to diameter aspect ratios were 1.33 and 2, while the pin diameter to tube diameter ratio was 0.188 and 0.125. Tests were performed for ReD varying from 6.9×104 to 2.2×105 and at conditions equivalent to the low pressure outlet (8.69 MPa, 361 K) of the low temperature recuperator (LTR) in an indirect sCO2 power cycle. The Wilson plot technique was utilized to measure the bulk heat transfer coefficients.For the better performing design (tube A, pin length to tube diameter ratio: 1.33, pin diameter to tube diameter ratio: 0.188), the local heat transfer coefficient increased by 112% relative to the Dittus-Boelter correlation at the LTR low pressure outlet. This corresponded to a 282% increase in the product of the heat transfer coefficient and the surface area. Large pressure drops across the test articles were observed.

Searle, Matthew↗

DOE OSTI2021

Polarization-based coding/encryption using organic charge-transfer materials

A charge-transfer material enables patterning approach where the polarization angle in stand-alone films can be precisely defined at the single pixel level and reconfigured following initial alignment. This capability enables new routes for non-binary information storage, retrieval, and intrinsic encryption, and it suggests future technologies such as photonic chips that can be reconfigured using non-contact patterning.

Kaehr, Bryan James↗

DOE OSTI2021

System and method for large-scale PCB production including continuous selective adhesion

A method for the large-scale production of PCBs including a continuous selective adhesion process for creating printed circuit traces providing input to a production line. A roll of printed circuit traces is produced using rolls of flexible substrate, conductive layer, and conductive layer support by applying adhesive between the rolls of flexible substrate and conductive layer, bringing the rolls together, transferring a circuit pattern onto the flexible substrate, curing the adhesive through non-opaque areas of the circuit pattern, and separating the non-bonded areas. The resulting printed circuit traces are applied from the roll to mounts, and circuit components are applied from a roll to the traces as the mounts move along the line. Additional rolls of printed circuit traces and circuit components may be incorporated, and multi-layer PCBs may be produced. As part of the production line, the finished PCBs may be applied to flat or contoured products.

Hatch, Jonathan Douglas↗

DOE OSTI2024

Photolithography system including selective light array

A system, device, and method for imparting or transferring a geometric pattern on the surface of a substrate. The device comprises, a housing forming at least a partially enclosed space, a light source body comprising an array of light emitters, a base disposed below the light source body and configured for supporting the substrate having a photoresist layer thereon, and a controller for activating a predetermined number of individual light emitters corresponding to the predetermined geometric pattern. Each individual light emitter within the array of light emitters is selectively activatable to emit a light. The array of light emitters comprises a plurality of light-emitting diodes, a plurality of quantum dots, or both.

Young, Barbara Diane↗

DOE OSTI2022

Fabrication of low blaze angle gratings by replication and plasma etch

We suggest a new method of making ultra-low blaze angle gratings for synchrotron application. The method is based on reduction of the blaze angle of a master grating by replication followed by a plasma etch. A master blazed grating with a relatively large blaze angle is fabricated by anisotropic wet etching of a Si single crystal substrate. The surface of the master grating is replicated by a polymer material on top of a quartz substrate by nanoimprinting and then transferred into quartz by a plasma etch. Then a 2nd nanoimprint step is applied to transfer the saw-tooth surface into a resist layer on top of a Si grating substrate. The plasma etch through the patterned resist layer provides transfer of the grooves into the Si substrate and results in reduction of the blaze angle due to the difference in etch rates of the resist and Si. We investigated the impact of the replication process on the groove shape, facet surface roughness, and diffraction efficiency of the fabricated 200 lines/mm low blaze angle grating.

Park, Sooyeon↗