A design procedure for radiation hardening certain NOR gate logic circuits.
Design procedure for production of radiation resistant NOR gate logic circuit
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Design procedure for production of radiation resistant NOR gate logic circuit
A proof-of-concept computer program called IGGLOSS (Interim Generalized Gate Logic Software Simulator) was developed and is discussed. The simulator engine was designed to perform stochastic estimation of self test coverage (fault-detection latency times) of digital computers or systems. A major attribute of the IGGLOSS is its high-speed simulation: 9.5 x 1,000,000 gates/cpu sec for nonfaulted circuits and 4.4 x 1,000,000 gates/cpu sec for faulted circuits on a VAX 11/780 host computer.
Unit-delay simulation, event driven simulation, zero-delay simulation, simulation techniques, 2-valued versus multivalued logic, network initialization, gate operations and alternate network representations, parallel versus serial mode simulation fault modelling, extension of multiprocessor systems, and simulation timing are discussed. Functional level networks, gate equivalent circuits, the prototype BDX-930 network model, fault models, identifying detected faults for BGLOSS are discussed. Preprocessor tasks, postprocessor tasks, executive tasks, and a library of bliss coded macros for GGLOSS are also discussed.
The main promise of Quantum Dot Cellular Automata (QCA) as a new computing paradigm is the possbility of implementing a set of universal logic gates and thus feasibility of general-purpose computing.
The High Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center is currently developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. The HTIES team recently fabricated and demonstrated the first semiconductor digital logic gates ever to function at 600 C.
Recently, we developed two ultra-fast all-optical switches in the nanosecond and picosecond regimes. The picosecond switch is made of a polydiacetylene thin film coated on the interior wall of a hollow capillary of approximately 50 micron diameter by a photo-polymerization process. In the setup a picosecond Nd:YAG laser at 10 Hz and at 532 nm with a pulse duration of approximately 40 ps was sent collinearly along a cw He-Ne laser beam and both were waveguided through the hollow capillary. The setup functioned as an Exclusive OR gate. On the other hand, the material used in the nanosecond switch is a phthalocyanine thin film, deposited on a glass substrate by a vapor deposition technique. In the setup a nanosecond, 10 Hz, Nd:YAG laser of 8 ns pulse duration was sent collinearly along a cw He-Ne laser beam and both were wave-guided through the phthalocyanine thin film. The setup in this case functioned as an all-optical AND logic gate. The characteristic table of the ExOR gate in polydiacetylene film was attributed to an excited state absorption process, while that of the AND gate was attributed to a saturation process of the first excited state. Both mechanisms were thoroughly investigated theoretically and found to agree remarkably well with the experimental results. An all-optical inverter gate has been designed but has not yet been demonstrated. The combination of all these three gates form the foundation for building all the necessary gates needed to build a prototype of an all-optical system.
Complex electronics and sensors are increasingly being relied on to enhance the capabilities and efficiency of modernjet aircraft. Some of these electronics and sensors monitor and control vital engine components and aerosurfaces that operate at high temperatures above 300 C. However, since today's silicon-based electronics technology cannot function at such high temperatures, these electronics must reside in environmentally controlled areas. This necessitates either the use of long wire runs between sheltered electronics and hot-area sensors and controls, or the fuel cooling of electronics and sensors located in high-temperature areas. Both of these low-temperature-electronics approaches suffer from serious drawbacks in terms of increased weight, decreased fuel efficiency, and reduction of aircraft reliability. A family of high-temperature electronics and sensors that could function in hot areas would enable substantial aircraft performance gains. Especially since, in the future, some turbine-engine electronics may need to function at temperatures as high as 600 C. This paper reports the fabrication and demonstration of the first semiconductor digital logic gates ever to function at 600 C. Key obstacles blocking the realization of useful 600 C turbine engine integrated sensor and control electronics are outlined.
The results of the initial testing of the Generalized Gate Level Logic Simulator (GGLOSS) are discussed. The simulator is a special purpose fault simulator designed to assist in the analysis of the effects of random hardware failures on fault tolerant digital computer systems. The testing of the simulator covers two main areas. First, the simulation results are compared with data obtained by monitoring the behavior of hardware. The circuit used for these comparisons is an incomplete microprocessor design based upon the MIL-STD-1750A Instruction Set Architecture. In the second area of testing, current simulation results are compared with experimental data obtained using precursors of the current tool. In each case, a portion of the earlier experiment is confirmed. The new results are then viewed from a different perspective in order to evaluate the usefulness of this simulation strategy.
The figure is a schematic diagram of a complementary metal oxide/semiconductor (CMOS) electronic circuit that performs one of three different logic functions, depending on the level of an externally applied control voltage, V(sub sel). Specifically, the circuit acts as A NAND gate at V(sub sel) = 0.0 V, A wire (the output equals one of the inputs) at V(sub sel) = 1.0 V, or An AND gate at V(sub sel) = -1.8 V. [The nominal power-supply potential (VDD) and logic "1" potential of this circuit is 1.8 V.] Like other multifunctional circuits described in several prior NASA Tech Briefs articles, this circuit was synthesized following an automated evolutionary approach that is so named because it is modeled partly after the repetitive trial-and-error process of biological evolution. An evolved circuit can be tested by computational simulation and/or tested in real hardware, and the results of the test can provide guidance for refining the design through further iteration. The evolutionary synthesis of electronic circuits can now be implemented by means of a software package Genetic Algorithms for Circuit Synthesis (GACS) that was developed specifically for this purpose. GACS was used to synthesize the present trifunctional circuit. As in the cases of other multifunctional circuits described in several prior NASA Tech Briefs articles, the multiple functionality of this circuit, the use of a single control voltage to select the function, and the automated evolutionary approach to synthesis all contribute synergistically to a combination of features that are potentially advantageous for the further development of robust, multiple-function logic circuits, including, especially, field-programmable gate arrays (FPGAs). These advantages include the following: This circuit contains only 9 transistors about half the number of transistors that would be needed to obtain equivalent NAND/wire/AND functionality by use of components from a standard digital design library. If multifunctional gates like this circuit were used in the place of the configurable logic blocks of present commercial FPGAs, it would be possible to change the functions of the resulting digital systems within shorter times. For example, by changing a single control voltage, one could change the function of thousands of FPGA cells within nanoseconds. In contrast, typically, the reconfiguration in a conventional FPGA by use of bits downloaded from look-up tables via a digital bus takes microseconds.
Advanced simulations and calculations on quantum computers require high-fidelity implementations of quantum operations. The universal gateset approach builds complex unitaries from a small set of primitive gates, often resulting in a long gate sequence, which is typically a leading factor in the total accumulated error. Compiling a complex unitary for processors with higher-dimensional logical elements, such as qutrits, exacerbates the accumulated error per unitary, since an even longer gate sequence is required. Optimal control methods promise time- and resource-efficient compact gate sequences and, therefore, higher fidelity. These methods generate pulses that can directly implement any complex unitary on a quantum device. In this work, we demonstrate that any arbitrary qubit and qutrit gate can be realized with high fidelity, which can significantly reduce the length of a gate sequence. We generate and test pulses for a large set of randomly selected arbitrary unitaries on several quantum processing units (QPUs): the Lawrence Livermore National Laboratory Quantum Device and Integration Testbed’s (QuDIT’s) standard QPU and three of Rigetti’s QPUs: Ankaa-2, Ankaa-9Q-1, and Aspen-M-3. On the QuDIT platform’s standard QPU, the average fidelity of random qutrit gates is 97.9 ± 0.5% measured with conventional QPT and 98.8 ± 0.6% from QPT with gate folding. Rigetti’s Ankaa-2 achieves random qubit gates with an average fidelity of 98.4 ± 0.5% (conventional QPT) and 99.7 ± 0.1% (QPT with gate folding). On Ankaa-9Q-1 and Aspen-M-3, the average fidelities with conventional qubit QPT measurements were higher than 99% (see Appendix). Here we show that optimal control gates are robust to drift for at least 3 h and that the same calibration parameters can be used for all implemented gates. Our work promises that the calibration overheads for optimal control gates can be made small enough to enable efficient quantum circuits based on this technique.
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Register requiring two integrated circuits per stage has nominal power dissipation of 3.5 mW per stage, its use eliminates reset pulse, allowing data transfer to occur in less than 1 microsecond, and eliminates power application to both right and left portions of the register simultaneously.
An optical associative memory system suitable for both auto- and hetero-associative recall is demonstrated. This system utilizes Hamming distance as the similarity measure between a binary input and a memory image with the aid of a two-dimensional optical EXCLUSIVE OR (XOR) gate and a parallel electronics comparator module. Based on the Hamming distance measurement, this optical associative memory performs a nearest neighbor search and the result is displayed in the output plane in real-time. This optical associative memory is fast and noniterative and produces no output spurious states as compared with that of the Hopfield neural network model.
Experimental optical associative-memory apparatus measures similarity or dissimilarity between input binary image and each of M binary images in memory. Uses Hamming distance as measure of dissimilarity, determines which (if any) of memory images closely or most closely resembles input image. Indicates this match by displaying image (e.g., recognized image or symbol, word, number, or other substitute image) in real time on output plane.
An optical system for auto-associative and hetero-associative recall utilizing Hamming distance as the similarity measure between a binary input image vector V(sup k) and a binary image vector V(sup m) in a first memory array using an optical Exclusive-OR gate for multiplication of each of a plurality of different binary image vectors in memory by the input image vector. After integrating the light of each product V(sup k) x V(sup m), a shortest Hamming distance detection electronics module determines which product has the lowest light intensity and emits a signal that activates a light emitting diode to illuminate a corresponding image vector in a second memory array for display. That corresponding image vector is identical to the memory image vector V(sup m) in the first memory array for auto-associative recall or related to it, such as by name, for hetero-associative recall.
This paper reports a design technique to make Complex CMOS Gates fail-safe for a class of faults. Two classes of faults are defined. The fail-safe design presented has limited fault-tolerance capability. Multiple faults are also covered.