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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1984

Lifetimes in Si CVD-epitaxial and other layers determined by spectral LBIC

In an effort to evaluate the minority carrier lifetimes in CVD-epitaxially grown layers in their dependence on the CVD process variables, the absolute spectral LBIC method was found to be the only available method capable of yielding both lifetime and surface recombination velocity in layers, independent of the resistivity of this layer or that of the substrate, as long as they are separated by a pn-junction. With this method, it was not only possible to determine the minority carrier lifetimes in as-grown epi-layers, but to observe their changes through the device fabrication processes. In addition, it was possible for the first time to determine the lifetimes in the alloy-regrowth p(+) layers of base high/low junction structures.

Wolf, M.↗
NASA NTRS1985

The J3 SCR model applied to resonant converter simulation

The J3 SCR model is a continuous topology computer model for the SCR. Its circuit analog and parameter estimation procedure are uniformly applicable to popular computer-aided design and analysis programs such as SPICE2 and SCEPTRE. The circuit analog is based on the intrinsic three pn junction structure of the SCR. The parameter estimation procedure requires only manufacturer's specification sheet quantities as a data base.

Avant, R. L.↗
DOE OSTI2026

The superconducting diode effect in Josephson junctions fabricated from a structurally chiral superconductor

The superconducting diode effect occurs in superconducting materials in which both time-reversal and inversion symmetry are broken. The recently observed chirality-induced spin selectivity effect demonstrates that chiral materials break both symmetries. Thus, a Josephson junction interface with the left-handed structure on one side of the junction and the right-handed structure on the other should exhibit a diode effect. Here, we report the electrical transport properties of right-handed/left-handed and right-handed/right-handed devices fabricated from single crystals of the structurally chiral superconductor Mo 3 Al 2 C. Fraunhofer-like magnetic diffraction patterns confirm the presence of the Josephson effect in all but one of our devices. A magnetic-field-induced superconducting diode effect is demonstrated in the right-handed/left-handed devices by a statistically significant difference in I c + and ∣ I c −∣, with a maximum asymmetry of 5%. The intrinsic superconducting diode effect is not observed in the right-handed/right-handed devices. We provide an explanation for the presence of the superconducting diode effect in the right-handed/left-handed devices.

superconducting devices↗
DOE OSTI2020

Electroluminescence Characterization of Recombination in Back Junction Silicon Heterojunction Test Structures: Role of the Inversion Layer

Electroluminescence (EL) characterization technique is used to quantify recombination properties in back junction silicon (Si) heterojunction (HJ) solar cell test structures with interdigitated back contact (IBC) emitters and metal contacts. These test structures are three terminal devices that allow the selective biasing and injection of minority carriers into spatially isolated emitter strips having different widths. This allows the study of minority carriers' current transport, flow, and recombination in these regions, which can, then, be applied to full IBC cells. EL is used to verify that emission is proportional to the minority carriers' concentration in the corresponding regions of the device, thus providing information relevant to minority carriers' collection when compared with laser beam induced current technique in considerably less time and with a higher spatial resolution. Current transport through the inversion layer that occurs due to the band bending at the n crystalline Si and p amorphous Si interface is discussed relying on the distance that minority carriers travel in different configurations and on their diffusion length. Laser defect spots (LDS) were, then, introduced in the emitter regions to analyze the spatial profile of minority carriers as they recombine at the LDS due to their high surface recombination velocity. Ideality factors in different configurations are spatially mapped from EL before and after introducing LDS and are used to show the effect of the inversion layer on the different recombination mechanisms. Current transport through the inversion layer is studied at different biasing conditions and correlated with current transport after LDS.

42 ENGINEERING↗
NASA NTRS1979

Design considerations for the Tandem Junction Solar Cell

Structure and operation of the tandem junction cell (TJC) are described. The impact of using only back contacts is discussed. A model is presented which explains operation of the TJC in terms of transistor action. The model is applied to predict TJC performance as a function of physical parameters.

Matzen, W. T.↗
NASA NTRS1989

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1992

Edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

An edge defined geometry is used to produce very small area tunnel junctions in a structure with niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier. The incorporation of an MgO tunnel barrier with two NbN electrodes results in improved current-voltage characteristics, and may lead to better junction noise characteristics. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
DOE OSTI2020

Modular repeat protein sculpting using rigid helical junctions

The ability to precisely design large proteins with diverse shapes would enable applications ranging from the design of protein binders that wrap around their target to the positioning of multiple functional sites in specified orientations. We describe a protein backbone design method for generating a wide range of rigid fusions between helix-containing proteins and use it to design 75,000 structurally unique junctions between monomeric and homo-oligomeric de novo designed and ankyrin repeat proteins (RPs). Of the junction designs that were experimentally characterized, 82% have circular dichroism and solution small-angle X-ray scattering profiles consistent with the design models and are stable at 95 °C. Crystal structures of four designed junctions were in close agreement with the design models with rmsds ranging from 0.9 to 1.6 Å. Electron microscopic images of extended tetrameric structures and ~10-nm-diameter “L” and “V” shapes generated using the junctions are close to the design models, demonstrating the control the rigid junctions provide for protein shape sculpting over multiple nanometer length scales.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1992

Method for producing edge geometry superconducting tunnel junctions utilizing an NbN/MgO/NbN thin film structure

A method for fabricating an edge geometry superconducting tunnel junction device is discussed. The device is comprised of two niobium nitride superconducting electrodes and a magnesium oxide tunnel barrier sandwiched between the two electrodes. The NbN electrodes are preferably sputter-deposited, with the first NbN electrode deposited on an insulating substrate maintained at about 250 C to 500 C for improved quality of the electrode.

Hunt, Brian D.↗
NASA NTRS1996

A Comprehensive Analysis of the Physical Properties of Advanced GaAs/AlGaAs Junctions

Extensive studies have been performed on MQW junctions and structures because of their potential applications as avalanche photodetectors in optical communications and imaging systems. The role of the avalanche photodiode is to provide for the conversion of an optical signal into charge. Knowledge of junction physics, and the various carrier generation/recombination mechanisms, is crucial for effectively optimizing the conversion process and increasing the structure's quantum efficiency. In addition, the recent interest in the use of APDs in imaging systems has necessitated the development of semiconductor junctions with low dark currents and high gains for low light applications. Because of the high frame rate and high pixel density requirements in new imaging applications, it is necessary to provide some front-end gain in the imager to allow operation under reasonable light conditions. Understanding the electron/hole impact ionization process, as well as diffusion and surface leakage effects, is needed to help maintain low dark currents and high gains for such applications. In addition, the APD must be capable of operating with low power, and low noise. Knowledge of the effects of various doping configurations and electric field profiles, as well as the excess noise resulting from the avalanche process, are needed to help maintain low operating bias and minimize the noise output.

Menkara, Hicham M.↗
DOE OSTI2020

Interfacial Spin-Orbit Coupling: A Platform for Superconducting Spintronics

Spin-orbit coupling (SOC) is a key interaction in spintronics, allowing electrical control of spin or magnetization and, vice versa, magnetic control of electrical current. However, recent advances have revealed much broader implications of SOC that is also central to the design of topological states with potential applications from low-energy dissipation and faster magnetization switching to high tolerance of disorder. SOC and the resulting emergent interfacial spin-orbit fields are simply realized in junctions through structural inversion asymmetry, while the anisotropy in magnetoresistance (MR) allows their experimental detection. Surprisingly, we demonstrate that an all-epitaxial ferromagnet/MgO/metal junction with a single ferromagnetic region and only negligible MR anisotropy undergoes a remarkable transformation below the superconducting transition temperature of the metal. The superconducting junction has a MR anisotropy 3 orders of magnitude higher and could enable novel applications in superconducting spintronics. In contrast to common realizations of MR effects that require a finite applied magnetic field, our system is designed to have two stable zero-field states with mutually orthogonal magnetizations: in plane and out of plane. This bistable magnetic anisotropy allows us to rule out orbital and vortex effects due to an applied magnetic field and identify the SOC origin of the observed MR. Such MR reaches approximately 20% without an applied magnetic field and could be further increased for large magnetic fields that support vortices. Our findings call for a revisit of the role of SOC, even when it seems negligible in the normal state, and suggest an alternative platform for superconducting spintronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Angstrom-Resolved Interfacial Structure in Buried Organic-Inorganic Junctions

Charge transport processes at interfaces which are governed by complex interfacial electronic structure play a crucial role in catalytic reactions, energy storage, photovoltaics, and many biological processes. Here, the first soft X-ray second harmonic generation (SXR-SHG) interfacial spectrum of a buried interface (boron/Parylene-N) is reported. SXR-SHG shows distinct spectral features that are not observed in X-ray absorption spectra, demonstrating its extraordinary interfacial sensitivity. Comparison to electronic structure calculations indicates a boron-organic separation distance of 1.9 {\AA}, wherein changes as small as 0.1 {\AA} result in easily detectable SXR-SHG spectral shifts (ca. 100s of meV). As SXR-SHG is inherently ultrafast and sensitive to individual atomic layers, it creates the possibility to study a variety of interfacial processes, e.g. catalysis, with ultrafast time resolution and bond specificity.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS2000

InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

The passivating front and back window layer of the top cell has been chosen. We have chosen to use InGaAs as the tunnel junction interconnect compound since it is easily degenerately doped. All of the dual junction cell structures were grown on GaAs substrates. Time constraints prevented us from completing the development of the GaAs-on-Ge growth process. Analysis of the I-V and EQE data, and comparison with computer-modeled data, shows that the performance of the dual-junction cell is still being controlled by the bottom cell, in spite of top cell thinning. Further improvement in the dual-junction cell efficiency is possible by thinning the front window.

Sinharoy, Samar↗
NASA NTRS1988

The mean flow structure around and within a turbulent junction or horseshoe vortex. I - The upstream and surrounding three-dimensional boundary layer

An experimental study of the mean flow structure upstream, around, and in a turbulent junction or horseshoe vortex is presented for the case of an incompressible subsonic flow. Mean velocity field and turbulent kinetic energy field measurements (obtained with hot film anemometry) and local wall shear stress measurements are used to monitor the upstream and surrounding three-dimensional turbulent boundary layer-like flow away from separation. Freestream or edge velocity and floor static pressure results are reported.

Menna, J. D.↗
DOE OSTI2020

STRUCTURAL STABILITY OF MAGNETIC TUNNEL JUNCTION BASED MOLECULAR SPINTRONICS DEVICES (MTJMSD)

Harnessing the exotic properties of molecular level nanostructures to produce novel sensors, metamaterials, and futuristic computer devices can be technologically transformative. In addition, connecting the molecular nanostructures to ferromagnetic electrodes bring the unprecedented opportunity of making spin property based molecular devices. We have demonstrated that magnetic tunnel junction based molecular spintronics device (MTJMSD) approach to address numerous technological hurdles that have been inhibiting this field for decades. MTJMSD approach is based on producing a capacitor like a testbed where two metal electrodes are separated by an ultrathin insulator and subsequently bridging the molecule nanostructure across the insulator to transform a capacitor into a molecular device. Our prior work showed that MTJMSDs produced extremely intriguing phenomenon such as room temperature current suppression by six orders, spin photovoltaic effect, and evolution of new forms of magnetic metamaterials arising due to the interaction of the magnetic a molecule with two ferromagnetic thin films. However, making robust and reproducible electrical connections with exotic molecules with ferromagnetic electrodes is full of challenges and requires attention to MTJMSD structural stability. This paper focuses on MTJMSD stability by describing the overall fabrication protocol and the associated potential threat to reliability. MTJMSD is based on microfabrication methods such as (a) photolithography for patterning the ferromagnetic electrodes, (b) sputtering of metallic thin films and insulator, and (c) at the end electrochemical process for bridging the molecules between two ferromagnetic films separated by ~ 2nm insulating gap.

36 MATERIALS SCIENCE↗