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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

The three-way junction structure of the HIV-1 PBS-segment binds host enzyme important for viral infectivity

HIV-1 reverse transcription initiates at the primer binding site (PBS) in the viral genomic RNA (gRNA). Although the structure of the PBS-segment undergoes substantial rearrangement upon tRNALys3 annealing, the proper folding of the PBS-segment during gRNA packaging is important as it ensures loading of beneficial host factors. DHX9/RNA helicase A (RHA) is recruited to gRNA to enhance the processivity of reverse transcriptase. Because the molecular details of the interactions have yet to be defined, we solved the solution structure of the PBS-segment preferentially bound by RHA. Evidence is provided that PBS-segment adopts a previously undefined adenosine-rich three-way junction structure encompassing the primer activation stem (PAS), tRNA-like element (TLE) and tRNA annealing arm. Disruption of the PBS-segment three-way junction structure diminished reverse transcription products and led to reduced viral infectivity. Because of the existence of the tRNA annealing arm, the TLE and PAS form a bent helical structure that undergoes shape-dependent recognition by RHA double-stranded RNA binding domain 1 (dsRBD1). Mutagenesis and phylogenetic analyses provide evidence for conservation of the PBS-segment three-way junction structure that is preferentially bound by RHA in support of efficient reverse transcription, the hallmark step of HIV-1 replication.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Nanometer Scale Imaging to Develop Quantitative Descriptors of Bipolar Membrane Junction Structure

Swings in pH can be achieved by electrically polarizing a bipolar membrane (BPM) to drive water dissociation at the BPM junction for electrochemical conversion and separation processes. BPM junction design is critical to tailor performance for specific applications; however, characterization techniques capable of resolving the nanometer scale physical structure of the junction are limited. We present sample preparation, imaging, and analysis workflows that are adaptable to a variety of BPM junction architectures. Atomic force microscopy produces BPM junction images with nanometer scale lateral resolution for samples with and without a graphene oxide water dissociation catalyst in the junction. Subsequent image segmentation and analysis quantify line edge roughness and catalyst layer thickness as descriptors of junction structure. Comparison of pre- and post-electrodialysis junctions suggests electric field-induced alignment of catalyst particles during electrodialysis. This characterization workflow can inform manufacturing protocols, computational modeling, and failure mode analysis for next-generation BPMs.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2026

Data supporting the manuscript "Nanometer Scale Imaging to Develop Quantitative Descriptors of Bipolar Membrane Junction Structure"

This dataset contains atomic force microscopy images associated with the manuscript "Nanometer Scale Imaging to Develop Quantitative Descriptors of Bipolar Membrane Junction Structure" by Maria Kelly, Emily R. Dunn, Ellis A. Spickermann, Josephine N. Gruber, César A. Lasalde-Ramírez, P. N. Romero Zavala, Éowyn Lucas, Ankur Gupta, Harry A. Atwater, and Wilson A. Smith. The dataset contains both raw images as well as segmented images produced by the image processing workflow described in the manuscript. A readme file and meta data file are included to provide additional details regarding the sample identity, image acquisition parameters, and file naming scheme.

36 MATERIALS SCIENCE↗
NASA NTRS1980

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Chi, J. Y.↗
DOE OSTI2024

Structural and biophysical insights into targeting of claudin-4 by a synthetic antibody fragment

Claudins are a 27-member family of ~25 kDa membrane proteins that integrate into tight junctions to form molecular barriers at the paracellular spaces between endothelial and epithelial cells. As the backbone of tight junction structure and function, claudins are attractive targets for modulating tissue permeability to deliver drugs or treat disease. However, structures of claudins are limited due to their small sizes and physicochemical properties—these traits also make therapy development a challenge. Here we report the development of a synthetic antibody fragment (sFab) that binds human claudin-4 and the determination of a high-resolution structure of it bound to claudin-4/enterotoxin complexes using cryogenic electron microscopy. Structural and biophysical results reveal this sFabs mechanism of select binding to human claudin-4 over other homologous claudins and establish the ability of sFabs to bind hard-to-target claudins to probe tight junction structure and function. The findings provide a framework for tight junction modulation by sFabs for tissue-selective therapies.

60 APPLIED LIFE SCIENCES↗
NASA NTRS1978

Voltage tunable differential heterodyne spectroscopy in the far-infrared with Josephson junctions

The basic methods of differential heterodyne spectroscopy with Josephson junctions are described. A technique is outlined for bridging the gap between a local oscillator frequency and a signal frequency through the use of a voltage-tunable internal oscillation frequency in a Josephson junction structure. It is shown that an intermediate frequency can be converted to a conveniently low frequency by double frequency conversion carried out directly in a Josephson junction. The expected conversion efficiency is estimated qualitatively. Experiments are discussed in which the differential heterodyne frequency-conversion technique was demonstrated at a wavelength of 0.4 mm and a voltage-tunable oscillation in a double Josephson junction structure was observed, with oscillation line widths as narrow as 0.5 Hz, for a resistance of 3.3 nanohms and an estimated inductance of the order of 1 nH.

Ulrich, B. T.↗
DOE OSTI2020

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗
NASA NTRS1989

NbN/MgO/NbN SIS tunnel junctions for submm wave mixers

The authors report on the fabrication and testing of all-refractory NbN/MgO/NbN SIS (superconductor-insulator-superconductor) tunnel junctions for use as high-frequency mixers. Progress in the development of techniques for the fabrication of submicron-area tunnel junctions is described. Junction structures which have been investigated include mesa, crossline, and edge geometries. Using reactive sputtering techniques, NbN tunnel junctions with critical currents in excess of 104 A/sq cm have been fabricated with Vm values as high as 65 mV and areas down to 0.1 sq micron. Specific capacitance measurements on NbN/MgO/NbN mesa-type tunnel junctions give values in the range 60-90 fF/sq micron. These SIS tunnel junctions have been integrated with antennas and coupling structures for mixer tests in a waveguide receiver at 207 GHz. Preliminary mixer results are reported.

Stern, J. A.↗
DOE OSTI2021

Simulating the Effect of p-n Junction Fields on TRPL Transients of Thin-Film CdTe Solar Cells

Bias-dependent time-resolved photoluminescence (TRPL) transients of thin CdTe solar cells were simulated with the goal of characterizing the effect of p-n junction fields on photoluminescence decays. It was found that, although bulk lifetime could be accurately determined in field-free samples, electric field effects in solar cells lead to systematic underestimation of bulk lifetime. Modulating field strength with the application of external bias was found to have a major impact, a result corroborated by experimental data. In particular, p-n junction fields effects were found to be effectively suppressed when a cell is put far into forward bias, enabling accurate measurement of bulk lifetime in p-n junction structures.

CdTe↗
NASA NTRS2003

Toward the Development of Group III-V Photodetectors and Imaging Arrays

A collaboration between researchers at NASA Goddard Space Flight Center (GSFC) (Code 718.1) and the Johns Hopkins University Applied Physics Laboratory (APL) on the development of gallium nitride (GaN) based photodetectors has been in existence since July 1994. This collaboration, based on APL undertaking the material growth and GSFC undertaking the device processing, has led to discrete GaN photoconductive detectors with superior characteristics to those of similar devices reported in the literature and, more recently, to the development of state-of-the art 256x256 imaging arrays with the pixels indium bump-bonded to a silicon readout circuit (RIOC). The object of this proposal is to continue the collaboration for the period 1998-2002 by outlining a program of work at the APL on the metalorganic chemical vapor deposition (MOCVD) growth of GaN and related materials for UV detector applications. In particular, emphasis will be placed on the optimization of growth on 2 in diameter substrates, on the growth of In(sub x)Ga(1-x)N and Al(sub x)Ga(1-x)N alloy structures to produce devices with a wider range of tailored cut-off wavelengths, and on the growth of pn-junction structures for photovoltaic devices.

Wickenden, Dennis K.↗
DOE OSTI2022

Microscopic Visualization of Cell-Cell Adhesion Complexes at Micro and Nanoscale

Considerable progress has been made in our knowledge of the morphological and functional varieties of anchoring junctions. Cell-cell adhesion contacts consist of discrete junctional structures responsible for the mechanical coupling of cytoskeletons and allow the transmission of mechanical signals across the cell collective. The three main adhesion complexes are adherens junctions, tight junctions, and desmosomes. Microscopy has played a fundamental role in understanding these adhesion complexes on different levels in both physiological and pathological conditions. In this review, we discuss the main light and electron microscopy techniques used to unravel the structure and composition of the three cell-cell contacts in epithelial and endothelial cells. It functions as a guide to pick the appropriate imaging technique(s) for the adhesion complexes of interest. We also point out the latest techniques that have emerged. At the end, we discuss the problems investigators encounter during their cell-cell adhesion research using microscopic techniques.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗
DOE OSTI2020

Disordered quantum transport in quantum anomalous Hall insulator-superconductor junctions

In this work we numerically studied disordered quantum transport in a quantum anomalous Hall insulator-superconductor junction based on the effective edge model approach. In particular, we focus on the parameter regime with the mean-free path due to elastic scattering much smaller than the sample size and superconductor coherence length, and discuss disordered transport behavior in the presence of different numbers of chiral edge modes, as well as nonchiral metallic modes. Our numerical results demonstrate that the presence of multiple chiral edge modes or nonchiral metallic modes will lead to a strong Andreev conversion, giving rise to half-electron half-hole transmission through the junction structure, in sharp contrast to the suppression of Andreev conversion in the single chiral edge mode case. Finally, our results suggest the importance of additional transport modes in the quantum anomalous Hall insulator-superconductor junction and will guide future transport measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1997

A Thermal and Electrical Analysis of Power Semiconductor Devices

The state-of-art power semiconductor devices require a thorough understanding of the thermal behavior for these devices. Traditional thermal analysis have (1) failed to account for the thermo-electrical interaction which is significant for power semiconductor devices operating at high temperature, and (2) failed to account for the thermal interactions among all the levels involved in, from the entire device to the gate micro-structure. Furthermore there is a lack of quantitative studies of the thermal breakdown phenomenon which is one of the major failure mechanisms for power electronics. This research work is directed towards addressing. Using a coupled thermal and electrical simulation, in which the drift-diffusion equations for the semiconductor and the energy equation for temperature are solved simultaneously, the thermo-electrical interactions at the micron scale of various junction structures are thoroughly investigated. The optimization of gate structure designs and doping designs is then addressed. An iterative numerical procedure which incorporates the thermal analysis at the device, chip and junction levels of the power device is proposed for the first time and utilized in a BJT power semiconductor device. In this procedure, interactions of different levels are fully considered. The thermal stability issue is studied both analytically and numerically in this research work in order to understand the mechanism for thermal breakdown.

Vafai, Kambiz↗
NASA NTRS1987

Constraint-based stereo matching

The major difficulty in stereo vision is the correspondence problem that requires matching features in two stereo images. Researchers describe a constraint-based stereo matching technique using local geometric constraints among edge segments to limit the search space and to resolve matching ambiguity. Edge segments are used as image features for stereo matching. Epipolar constraint and individual edge properties are used to determine possible initial matches between edge segments in a stereo image pair. Local edge geometric attributes such as continuity, junction structure, and edge neighborhood relations are used as constraints to guide the stereo matching process. The result is a locally consistent set of edge segment correspondences between stereo images. These locally consistent matches are used to generate higher-level hypotheses on extended edge segments and junctions to form more global contexts to achieve global consistency.

Kuan, D. T.↗
DOE OSTI2022

High power density soft x-ray GaAs photodiodes with tailored spectral response

GaAs photodiode arrays have been designed for non-destructive monitoring of x-ray beam position in soft coherent beamline front ends in synchrotron light sources. A shallow p-on-n junction was employed to reduce the device photocurrent density to optimize the operation with beam power densities up to 20 W mm -2 , mainly coming from hard x-rays. With this approach, the photocurrent is primarily defined by the excess carriers generated by low-energy x-ray photons absorbed near the detector surface. The p–n junction structures were grown by molecular beam epitaxy and processed into 64-element linear photodiode arrays. The devices were characterized first in the visible range with a high-power Ar-ion laser and then tested in the soft and hard x-ray regions up to 10 keV at two beamlines of the National Synchrotron Light Source II. The responsivity was measured to be 0.16 A W -1 at 0.7 keV and 0.05 A W -1 at 6 keV in agreement with modeling. At higher x-ray energies the measured responsivity was lower than predicted in the framework of the carrier diffusion model; a possible explanation is discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs 0.75 P 0.25 /Si Tandem Solar Cells

A high-performance metamorphic Al 0.2 Ga 0.8 As 0.75 P 0.25 /GaAs 0.75 P 0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs 0.75 P 0.25 /Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes non-abrupt doping profiles in the Te doped layer. Furthermore, these efforts resulted in a fully-relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density (JP) of 279.1 A·cm –2 and a zero-bias resistance area product (RA) of 3.0×10 –4 Ω·cm 2 . After post-growth annealing to emulate the thermal load of the GaAs 0.75 P 0.25 top cell growth and elimination of the performance enhancing carbon activation anneal, the device achieved JP = 13.1 A·cm –2 and RA = 1.5×10 –3 Ω·cm 2 . These worst-case values are very promising as they enable the operation of GaAs 0.75 P 0.25 /Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss.

14 SOLAR ENERGY↗
DOE OSTI2022

Single Photon Detection with On-Chip Number Resolving Capability

Single photon detection (SPD) plays an important role in many forefront areas of fundamental science and advanced engineering applications. In recent years, rapid developments in superconducting quantum computation, quantum key distribution, and quantum sensing call for SPD in the microwave frequency range. We have explored in this LDRD project a new approach to SPD in an effort to provide deterministic photon-number-resolving capability by using topological Josephson junction structures. In this SAND report, we will present results from our experimental studies of microwave response and theoretical simulations of microwave photon number resolving detector in topological Dirac semimetal Cd 3 As 2 . These results are promising for SPD at the microwave frequencies using topological quantum materials.

47 OTHER INSTRUMENTATION↗