Fine-tuned order-order phase transitions in giant surfactants via interfacial engineering
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TiO 2 nanorod (NR) array for perovskite solar cells (PSCs) has attached great importance due to superb power conversion efficiency (PCE) compared to traditional mesoporous TiO 2 film. A TiO 2 compact layer for the growth of TiO 2 NR array via spin-coating cannot meet the requirements for efficient NR based PSCs. Herein we have developed and demonstrated inserting an bifunctional extra-thin TiO 2 interlayer (5 nm) by atomic layer deposition (ALD) at the interface of FTO/TiO 2 compact layer to achieve an alleviated electron exchange and a reduced energetic barrier. Thus, an accelerated extraction of electrons from TiO 2 NR arrays via the compact layer to FTO substrate is ready for improving the PSC efficiency. The thickness of the spin-coated TiO 2 compact layer on the ALD-deposited TiO 2 layer is spontaneously optimized. Finally, an outstanding efficiency of 20.28% has been achieved from a champion PSC with negligible hysteresis and high reliability. To the best of our knowledge, this is the first time to demonstrate the superiority of TiO 2 -NR based PSCs withstanding in dry heat and thermal cycling tests. The results are of great importance for the preparation of efficient and durable PSCs for our real-world applications.
Gallium indium phosphide (GaInP 2 ) is a semiconductor with promising optical and electronic properties to serve as the large bandgap, top junction in a dual absorber tandem solar water splitting device. Poor intrinsic catalytic ability and surface corrosion in aqueous electrolyte remain key obstacles. Significant progress has been made developing thin-film protection layers and active catalysts for photoelectrochemical devices, but combining these into a catalytic protection layer that can provide long-term stability without sacrificing performance has proven difficult due, in large part, to challenges in developing active and stable interfaces. In this work, we demonstrate that a nanoscale molybdenum disulfide (MoS 2 ) film functions both as an effective protection layer and excellent hydrogen evolution catalyst for GaInP 2 photocathodes, with only a ~10% loss in initial light-limited current density after 100 h, and a photocurrent onset potential better than that of the same state-of-the-art device with a platinum-ruthenium catalyst. Using transient photoreflectance spectroscopy, we probed the carrier dynamics of these photocathodes and show that the MoS 2 coated device exhibits improved electron transfer at the surface interface compared to the PtRu catalyzed device. These MoS 2 protected devices are among the most active and stable single-absorber photocathodes for solar water splitting to date and offer a promising pathway towards generating hydrogen with high efficiency and significant longevity.
In the past 6 years, the UW team have collaborated extensively with the Battery500 Consortium team members, including The Pacific Northwest National Lab, The Idaho National Lab, Binghamton University, and UT Austin. We have accomplished all milestones and deliverables at the end of the program.
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The overarching objective of this project was to increase significantly the mechanical adhesion toughness of the key interfaces in PSCs, thereby improving the durability and reliability of PSCs and minimodules, while simultaneously enhancing their PCE. This is achieved by incorporating rationally-chosen self-assembled monolayers (SAMs) at key PSC interfaces. Inherently scalable methods for the deposition of MHP light-absorber thin films and SAMs are employed to ensure a viable path towards manufacturability. Furthermore, detailed understanding of mechanisms of PSCs and minimodules degradation, and SAMs-induced mitigation, is provided. As part of the project accomplishments, >60% increase in the adhesion toughness of the key PSC interfaces over their SAMs-free control counterparts was achieved. Also, PCEs >20% and >19% in rigid and flexible, respectively, single-junction PSCs (~1 cm 2 area) were achieved. It was shown that <20% PCE loss in flexible PSCs with SAMs can be achieved after bend testing. It was demonstrated that T80 (80% retention of initial PCE) of >5,000 hours in rigid PSCs (~1 cm2 area) can be achieved. Comprehensive understanding of the degradation mechanisms in PSCs was obtained. These strategies were adopted towards developing minimodules. PCE of >21% was obtained in an 6-cm 2 area minimodule, with T91 of 1,000 hours.
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The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO 3 thin films. Theoretical calculations predict the key role of the BaTiO 3 /PrScO 3 (110) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.
Antiferroelectric materials have seen a resurgence of interest because of proposed applications in a number of energy-efficient technologies. Unfortunately, relatively few families of antiferroelectric materials have been identified, precluding many proposed applications. Here, we propose a design strategy for the construction of antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO 3 . By confining thin layers of BiFeO 3 in a dielectric matrix, we show that a metastable antiferroelectric structure can be induced. Application of an electric field reversibly switches between this new phase and a ferroelectric state. The use of electrostatic confinement provides an untapped pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.
Understanding the electrochemical deposition of metal anodes is critical for high-energy rechargeable batteries, among which solid-state lithium metal batteries have attracted extensive interest. A long-standing open question is how electrochemically deposited lithium-ions at the interfaces with the solid-electrolytes crystalize into lithium metal. Here, using large-scale molecular dynamics simulations, we study and reveal the atomistic pathways and energy barriers of lithium crystallization at the solid interfaces. In contrast to the conventional understanding, lithium crystallization takes multi-step pathways mediated by interfacial lithium atoms with disordered and random-closed-packed configurations as intermediate steps, which give rise to the energy barrier of crystallization. This understanding of multi-step crystallization pathways extends the applicability of Ostwald’s step rule to interfacial atom states, and enables a rational strategy for lower-barrier crystallization by promoting favorable interfacial atom states as intermediate steps through interfacial engineering. Our findings open rationally guided avenues of interfacial engineering for facilitating the crystallization in metal electrodes for solid-state batteries and can be generally applicable for fast crystal growth.
To explore new constituents in two-dimensional (2D) materials and to combine their best in van der Waals heterostructures is in great demand as being a unique platform to discover new physical phenomena and to design novel functionalities in interface-based devices. Here in this paper, PbI 2 crystals as thin as a few layers are synthesized, particularly through a facile low-temperature solution approach with crystals of large size, regular shape, different thicknesses, and high yields. As a prototypical demonstration of band engineering of PbI 2 -based interfacial semiconductors, PbI 2 crystals are assembled with several transition metal dichalcogenide monolayers. The photoluminescence of MoS 2 is enhanced in MoS 2 /PbI 2 stacks, while a dramatic photoluminescence quenching of WS 2 and WSe 2 is revealed in WS2/PbI 2 and WSe 2 /PbI2 stacks. This is attributed to the effective heterojunction formation between PbI 2 and these monolayers; type I band alignment in MoS 2 /PbI2 stacks, where fast-transferred charge carriers accumulate in MoS 2 with high emission efficiency, results in photoluminescence enhancement, and type II in WS 2 /PbI 2 and WSe 2 /PbI 2 stacks, with separated electrons and holes suitable for light harvesting, results in photoluminescence quenching. The results demonstrate that MoS 2 , WS 2 , and WSe 2 monolayers with similar electronic structures show completely distinct light–matter interactions when interfacing with PbI 2 , providing unprecedented capabilities to engineer the device performance of 2D heterostructures.
Abstract The superior size and power scaling potential of ferroelectric-gated Mott transistors makes them promising building blocks for developing energy-efficient memory and logic applications in the post-Moore’s Law era. The close to metallic carrier density in the Mott channel, however, imposes the bottleneck for achieving substantial field effect modulation via a solid-state gate. Previous studies have focused on optimizing the thickness, charge mobility, and carrier density of single-layer correlated channels, which have only led to moderate resistance switching at room temperature. Here, we report a record high nonvolatile resistance switching ratio of 38,440% at 300 K in a prototype Mott transistor consisting of a ferroelectric PbZr 0.2 Ti 0.8 O 3 gate and an R NiO 3 ( R : rare earth)/La 0.67 Sr 0.33 MnO 3 composite channel. The ultrathin La 0.67 Sr 0.33 MnO 3 buffer layer not only tailors the carrier density profile in R NiO 3 through interfacial charge transfer, as corroborated by first-principles calculations, but also provides an extended screening layer that reduces the depolarization effect in the ferroelectric gate. Our study points to an effective material strategy for the functional design of complex oxide heterointerfaces that harnesses the competing roles of charge in field effect screening and ferroelectric depolarization effects.
The electrochemical oxygen evolution reaction (OER) is a critical half-reaction in a variety of energy conversion and storage applications, however, OER suffers from sluggish kinetics due to the four proton-electron transfer processes. To remedy this, interfacial engineering proves an effective strategy to design high active OER catalysts. Herein, we report a facile synthesis of Co(OH)2 nanoneedle (Co-NN) arrays grown on stainless steel (SS) via a one-step hydrothermal reaction, and the resultant impressive OER performance. Particularly, the Co-NN/SS needs 267, 307, and 576 mV overpotentials to reach 10, 100, and 1000 mA cm−2 in 1 M KOH & room temperature, and the overpotentials drop to 199, 257, and 283 mV to achieve the same current densities in 30 wt% KOH & 80 °C. Additionally, an alkaline water electrolysis (AWE) cell coupled with Co-NN/SS anode and PtRu/NiMo cathode only requires 1.65 and 1.73 V iR-free cell voltage to reach 1.0 and 2.0 A cm−2, respectively. The sterling OER performance could be attributed to four possible reasons, the Fe in SS surface tailoring the electronic properties of Co(OH)2, the mixed metal oxides on SS surface accelerating surface reconstruction of Co(OH)2 nanoneedles into CoOOH active species, a Ni-rich surface layer formation cooperatively boosting the OER activity, and a local electric field effect concentrating reactants on the tip surface and accelerating the mass transfer. This work provides a facile approach for synthesizing highly efficient OER catalysts for industrial applications by interfacial engineering.
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