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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Ferroelectric epitaxial Al(Sc/B)N/Mo/SiC heterostructures for high operating temperature devices

Advances in wurtzite nitride ferroelectrics of Al 1-x M x N (⁠ M = Sc or B) have led to novel capabilities, which must be integrated into existing fabrication processes. In the case of electronics operating > 200°C, a movement toward SiC-based platforms enables better performance over conventional Si, primarily due to the higher bandgap and lower intrinsic carrier concentration of SiC. Hence, the challenge is to develop a deposition process to integrate Al 1-x M x M x N ferroelectrics with elevated temperature-compatible materials for high temperature electronics such as the non-volatile memory component. We demonstrate epitaxial Al M N/Mo/SiC heterostructures, which provides both the crystalline and surface features that promote high-quality ferroelectric nitride film growth. Omega scans of the Mo (110) reflection exhibit a full width at half max of < 0.02° (40 arc sec) and the (0002) peak of the subsequently grown nitride film had a value of 1.1° for 160 nm thick Al 0.7 Sc 0.3 N and 1.3° for 400 nm thick Al 0.94 B 0.06 N. The crystallographic relationships found between the Al M N, Mo, and SiC layers indicate an advancement in sputter deposition of epitaxial films. Ferroelectric switching is also shown at 400 °C in both samples via polarization-electric field hysteresis and pulsed measurements, which exhibited P r values >100 μC cm -2 and E c between 3 and 4 M V cm -1 ⁠, despite a large presence of oxygen in both Al M N films ranging between 4 and 5 at.%, revealed by compositional analysis. This study demonstrates the process for synthesizing high-crystal quality ferroelectric nitride films, which can be used in extremely high temperature applications.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

High current, high-temperature operation test of the superconducting magnets in the RHIC yellow ring

We report on the tests conducted at the end of RHIC Run 21 to evaluate the operation of superconducting magnets in the RHIC yellow ring at higher currents – up to 5500 A for the arc dipoles and all other magnets on the dipole bus and the focusing arc quadrupoles, up to 5750 A for defocusing arc quadrupoles and up to 6000 A for the insertion quadrupoles Q1 through Q9 – and higher temperatures – up to 5.1 K – than routine. None of the magnets quenched. This is an encouraging finding as the superconducting magnet coils could reach up to 4.9 K during operation with the 275 GeV EIC hadron beams.

43 PARTICLE ACCELERATORS↗
NASA NTRS1974

Evaluation of cermet materials suitable for lithium lubricated thrust bearings for high temperature operation

Cerment materials (HfC - 10 wt% W; HfC - 10 wt% TaC - 10 wt%W; HfC - 2 wt% CbC - 8 wt% Mo;Hfn - 10 wt% W; Hfn - 10 wt% TaN - 10 wt% W; and ZrC - 17 wt% W) were evaluated for possible use as lithium-lubricated bearings in the control system of a nuclear reactor. Tests of compatibility with lithium were made in T-111 (Ta-8W-2Hf) capsules at temperatures up to 1090 C. The tendencies of HfC-TaC-W, HfC-CbC-Mo, and HfN-W to bond to themselves and to the refractory alloys T-111 and TZM when enclosed in lithium-filled capsules under a pressure of 2000 psi at 980 and 1200 C for 1933 hours were evaluated. Thermal expansion characteristics were determined for the same three materials from room temperature to 1200 C. On the basis of these tests, HfC-10 TaC-10W and HfN-10W were selected as the best and second best candidates, respectively, of the materials tested for the bearing application.

Sinclair, J. H.↗
NASA NTRS1981

Passive components for high temperature operation

The development of resistors, capacitors, and interconnect metalizations utilizing a low pressure chemical vapor deposition (LPCVD) process is described. The LPCVD process allows the passive components to be fabricated at temperatures higher than their highest operating temperatures. The deposition of thin films by LPCVD is accomplished by reacting one or more gases on the surface of a heated substrate. The substrates to be coated are placed on a graphite susceptor and then loaded into the center of a quartz reaction tube. The RF power is applied to the coil on the outside of the reaction tube which in turn is coupled into the graphite susceptor causing it to heat. Pressures of several torr or less are typical, with carrier flow rates of 0.1 to 2.0 liters/min. Nitrogen, hydrogen, and helium are typical carrier gases. These are controlled with mass flow controllers and the pressure is continuously monitored with a capacitive manometer. Materials selection and device testing are also discussed.

Raymond, L. S.↗
NASA NTRS1981

Evaluation of crystal oscillators and frequency dividers for high temperature operation

Active and passive components of crystal oscillators and frequency dividers were tested to determine their performance at temperatures from 300 C to 350 C. The properties of GaAs JFETs were determined and their performance compared with that of silicon devices. Techniques for constructing breadboard circuits were assessed for operation in this temperature range. A Pierce oscillator and a multivibrator (Colorado crystal) oscillator were constructed and tested. Device failures are discussed.

Source record↗
NASA NTRS2015

High Operating Temperature Barrier Infrared Detector with Tailorable Cutoff Wavelength

A barrier infrared detector with absorber materials having selectable cutoff wavelengths and its method of manufacture is described. A GaInAsSb absorber layer may be grown on a GaSb substrate layer formed by mixing GaSb and InAsSb by an absorber mixing ratio. A GaAlAsSb barrier layer may then be grown on the barrier layer formed by mixing GaSb and AlSbAs by a barrier mixing ratio. The absorber mixing ratio may be selected to adjust a band gap of the absorber layer and thereby determine a cutoff wavelength for the barrier infrared detector. The absorber mixing ratio may vary along an absorber layer growth direction. Various contact layer architectures may be used. In addition, a top contact layer may be isolated into an array of elements electrically isolated as individual functional detectors that may be used in a detector array, imaging array, or focal plane array.

Ting, David Z.↗
DOE OSTI2022

Depth-Dependent Understanding of Cathode Electrolyte Interphase (CEI) on the Layered Li-Ion Cathodes Operated at Extreme High Temperature

The high-temperature operation of Li-ion batteries is highly dependent on the stability of the cathode electrolyte interphase (CEI) formed during lithiation-delithiation reactions. However, knowledge on the nature of the CEI is limited and its stability under extreme temperatures is not well understood. Therefore, herein, we investigate a proof-of-concept study on stabilizing CEI on model LiNi 0.33 Mn 0.33 Co 0.33 O 2 (NMC333) at extreme operation condition of 100 oC using thermally stable pyrrolidinium based ionic liquid electrolyte. The electrochemical lithiation-delithiation reactions at 100 oC and the CEI evolution upon different cycling conditions are investigated. Further, the depth-dependent CEI chemistry was investigated using energy tunable synchrotron-based hard X-ray photoelectron spectroscopy (HAXPES). Overall, the results reveal that the high temperature operation accelerated the CEI formation compared to room temperature, and the surface of the interphase layer is rich in boron-based inorganic moieties than the deeper surface. Further, bulk sensitive X-ray absorption spectroscopy (XAS) was used to investigate the transition metal redox contributors during high temperature electrochemical reactions, similar to room temperature, the Ni2+/4+redox couple is the only charge compensating redox couple during high temperature operation. Finally, the physical nature of the conformal CEI on the cathode particles was visualized with high-resolution transmission electron microscopy, which confirms that the significant degradation of cathode particles without conformal CEI is due to the transformation of layer to spinel formation at extreme temperature. In this study, understanding this high temperature interfacial chemistry of NMC cathodes through advanced spectroscopy and microscopy will shed light on transforming ambient temperature Li-ion chemistry to high temperature applications.

25 ENERGY STORAGE↗
DOE OSTI2025

Electron-Phonon Renormalization in the Proton-Conducting Electrolyte Ba Zr O 3 and Its Implications for High-Temperature Electrolysis

Electrical leakage is an inherent problem in solid-oxide fuel and electrolyzer cells, limiting their energy-conversion efficiency. High concentrations of electrons or holes can exacerbate this issue. However, it is largely unclear how the typical high operating temperatures of the systems influence their charge-carrier concentrations. In this work, we use first-principles calculations to examine how lattice vibrations impact electrical conductivity in conventional electrolytes, using Ba Zr O 3 as a representative material. Our analysis shows that phonon-induced shifts in the band gap and band edges lead to a dramatic increase in p -type carrier concentrations at temperatures above 600 K, compared to models that neglect temperature effects. Additionally, we reveal the importance of oxygen-ion motion on band-edge positions, which makes valence-band-edge shift dominate the band-gap change. Our study provides a protocol for calculating phonon-induced changes in similar oxides, paving the way for interrogating electrical leakage in electrolytes for high-temperature operation. Published by the American Physical Society 2025

25 ENERGY STORAGE↗