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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Magnetic materials for high temperature operation, high temperature capacitor feasibility, and bore seal development under space simulated environment
Analysis and design of three gas bearings for high temperature operation
A mid-wavelength infrared (MWIR) barrier photodetector is capable of operating at higher temperature than the prevailing MWIR detectors based on InSb. The standard high-operating-temperature barrier infrared detector (HOT-BIRD) is made with an InAsSb infrared absorber that is lattice-matched to a GaSb substrate, and has a cutoff wavelength of approximately 4 microns. To increase the versatility and utility of the HOT-BIRD, it is implemented with IR absorber materials with customizable cutoff wavelengths. The HOT-BIRD can be built with the quaternary alloy GaInAsSb as the absorber, GaAlSbAs as the barrier, on a lattice-matching GaSb substrate. The cutoff wavelength of the GaInAsSb can be tailored by adjusting the alloy composition. To build a HOT-BIRD requires a matching pair of absorber and barrier materials with the following properties: (1) their valence band edges must be approximately the same to allow unimpeded hole flow, while their conduction band edges should have a large difference to form an electron barrier; and (2) the absorber and the barrier must be respectively lattice-matched and closely lattice-matched to the substrate to ensure high material quality and low defect density. To make a HOT-BIRD with cutoff wavelength shorter than 4 microns, a GaInAsSb quaternary alloy was used as the absorber, and a matching GaAlSbAs quaternary alloy as the barrier. By changing the alloy composition, the band gap of the quaternary alloy absorber can be continuously adjusted with cutoff wavelength ranging from 4 microns down to the short wavelength infrared (SWIR). By carefully choosing the alloy composition of the barrier, a HOT-BIRD structure can be formed. With this method, a HOT-BIRD can be made with continuously tailorable cutoff wavelengths from 4 microns down to the SWIR. The HOT-BIRD detector technology is suitable for making very-large-format MWIR/SWIR focal plane arrays that can be operated by passive cooling from low Earth orbit. High-operating temperature infrared with reduced cooling requirement would benefit space missions in reduction of size, weight, and power, and an increase in mission lifetime.
The worldwide energy demand in electric vehicles and the increasing global temperature have called for development of high-energy and long-life lithium-ion batteries (LIBs) with improved high temperature operational resiliency. However, current attention has been mostly focused on cycling aging at elevated temperature, leaving considerable gaps of knowledge in the failure mechanism and practical control of abusive calendar aging and thermal runaway that are highly related to the eventual operational lifetime and safety performance of LIBs. Herein, using a combination of various in situ synchrotron X-ray and electron microscopy techniques, we report a multiscale understanding of surface structure effects involved in regulating the high temperature operational tolerance of polycrystalline Ni-rich layered cathodes. Our results collectively show that an ultraconformal poly (3,4-ethylenedioxythiophene) coating can effectively prevent LiNi 0.8 Co 0.1 Mn 0.1 O 2 cathode from undesired phase transformation and transition metal dissolution on the surface, atomic displacement and dislocations within primary particles, intergranular cracking along the grain boundaries within secondary particles, and intensive bulk oxygen release during high state-of-charge and high temperature aging. As a result, the present work highlights the essential role of surface structure controls in overcoming the multiscale degradation pathways of high-energy battery materials at extreme temperature.
In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.
Space applications that utilize solar thermal energy--such as electric power conversion systems, thermal propulsion systems, and furnaces--require highly efficient solar concentration systems. The NASA Glenn Research Center is developing the refractive secondary concentrator, which uses refraction and total internal reflection to efficiently concentrate and direct solar energy. When used in combination with advanced lightweight primary concentrators, such as inflatable thin films, the refractive secondary concentrator enables very high system concentration ratios and very high temperatures. Last year, Glenn successfully demonstrated a secondary concentrator throughput efficiency of 87 percent, with a projected efficiency of 93 percent using an antireflective coating. Building on this achievement, Glenn recently successfully demonstrated high-temperature operation of the secondary concentrator when it was used to heat a rhenium receiver to 2330 F. The high-temperature demonstration of the concentrator was conducted in Glenn's 68-ft long Tank 6 thermal vacuum facility equipped with a solar simulator. The facility has a rigid panel primary concentrator that was used to concentrate the light from the solar simulator onto the refractive secondary concentrator. NASA Marshall Space Flight Center provided a rhenium cavity, part of a solar thermal propulsion engine, to serve as the high-temperature receiver. The prototype refractive secondary concentrator, measuring 3.5 in. in diameter and 11.2 in. long, is made of single-crystal sapphire. A water-cooled splash shield absorbs spillage light outside of the 3.5-in. concentrator aperture. Multilayer foil insulation composed of tungsten, molybdenum, and niobium is used to minimize heat loss from the hightemperature receiver. A liquid-cooled canister calorimeter is used to measure the heat loss through the multilayer foil insulation.
Increasing operating temperatures of solar receivers is paramount to the efficiency of concentrated solar thermal and solar power systems. GE Aerospace Research in collaboration with Heliogen Inc and Sandia National Laboratories (SNL) is engaged in the development of ultra-High Operating Temperature SiC-matrix Solar Thermal Air Receiver (HOTSSTAR) enabled by additive manufacturing. HOTSSTAR goal is to demonstrate SiC receiver with air exit temperatures up to 1100oC. We discuss fabrication and on-sun test results of a prototype 50kWth test module. The receiver architecture is based on a radial airflow design and consists of a series of radial SiC receiver sectors organized around central absorber. These components were fabricated using binder-jet printed SiC followed by melt-infiltration reaction bonding process. To enhance the thermo-mechanical reliability of SiC test articles in thermal gradient/ shock environment of the application, the components were laminated with GE’s MI SiC CMC. A dedicated test facility was constructed at SNL Solar Tower to evaluate the operational performance of HOTSSTAR module under solar fluxes >200 W/cm2. We report on our final 50kW test module fabrication, integration at the test facility at Sandia, and discuss on-sun test results. We compare the performance of HOTSSTAR module relative to our model predictions.
Single-crystal Ni-rich Li[Ni x Mn y Co 1-x-y ]O 2 (SC-NMC) cathodes represent a promising approach to mitigate the cracking issue of conventional polycrystalline cathodes. However, many reported SC-NMC cathodes still suffer from unsatisfactory cycling stability, particularly under high charge cutoff voltage and/or elevated temperature. Herein, we report an ultraconformal and durable poly(3,4-ethylenedioxythiophene) (PEDOT) coating for SC-NMC cathodes using an oxidative chemical vapor deposition (oCVD) technique, which significantly improves their high-voltage (4.6 V) and high-temperature operation resiliency. The PEDOT coated SC LiNi 0.83 Mn 0.1 Co 0.07 O 2 (SC-NMC83) delivers an impressive capacity retention rate of 96.7% and 89.5% after 100 and 200 cycles, respectively. Significantly, even after calendar aging at 45 degrees C and 4.6 V, the coated cathode can still retain 85.3% (in comparison with 59.6% for the bare one) of the initial capacity after 100 cycles at a 0.5 C rate. Synchrotron X-ray experiments and interface characterization collectively reveal that the conformal PEDOT coating not only effectively stabilizes the crystallographic structure and maintains the integrity of the particles but also significantly suppresses the electrolyte's corrosion, resulting in improved electrochemical/thermal stability. Our findings highlight the promise of an oCVD PEDOT coating for single-crystal Ni-rich cathodes to meet the grand challenge of high-energy batteries under extreme conditions.
Beta gallium oxide (β-Ga2O3) shows significant promise in high-temperature, high-power, and sensing electronics applications. However, long-term stable metallization layers for Ohmic contacts at high temperatures present unique thermodynamic challenges. The current most common Ohmic contact design based on 20 nm of Ti has been repeatedly demonstrated to fail at even moderately elevated temperatures (300–400 °C) due to a combination of nonstoichiometric Ti/Ga2O3 interfacial reactions and kinetically favored Ti diffusion processes. Here, we demonstrate stable Ohmic contacts for Ga2O3 devices operating up to 500–600 °C using ultrathin Ti layers with a self-limiting interfacial reaction. The ultrathin Ti layer in the 5 nm Ti/100 nm Au contact stack is designed to fully oxidize while forming an Ohmic contact, thereby limiting both thermodynamic and kinetic instability. This novel contact design strategy results in an epitaxial conductive anatase titanium oxide interface layer that enables low-resistance Ohmic contacts that are stable both under long-term continuous operation (>500 h) at 600 °C in vacuum (≤10−4 Torr), as well as after repeated thermal cycling (15 times) between room temperature and 550 °C in flowing N2. This stable Ohmic contact design will accelerate the development of high-temperature devices by enabling research focus to shift toward rectifying interfaces and other interfacial layers.
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Metal halide perovskite photovoltaic performance required for commercial technology encompasses both efficiency and stability. Advances in both these parameters have recently been reported; however, these strategies are often difficult to directly compare due to differences in perovskite composition, device architecture, fabrication methods, and accelerated stressors applied in stability tests. In particular, it is found that there is a distinct lack of elevated temperature, operational (light and bias) stability data. Furthermore, significant testing is required to understand the interactions when combinations are used (e.g., additives used with posttreatments). Herein, individual and combined additive, posttreatment, and contact layer strategies from recent literature reports under standardized operational stability tests of p-i-n CsMAFA perovskites at 70 degrees C are evaluated. Through analysis of over 1000 devices, it is concluded that the hole-transport layer (HTL) is the most significant component impacting elevated temperature operational stability. This analysis motivates future development of high-performance HTLs.
The nBn or XBn barrier infrared detector has the advantage of reduced dark current resulting from suppressed Shockley-Read-Hall (SRH) recombination and surface leakage. High performance detectors and focal plane arrays (FPAs) based on InAsSb absorber lattice matched to GaSb substrate, with a matching AlAsSb unipolar electron barrier, have been demonstrated. The band gap of lattice-matched InAsSb yields a detector cutoff wavelength of approximately 4.2 ??m when operating at ~150K. We report results on extending the cutoff wavelength of midwave barrier infrared detectors by incorporating self-assembled InSb quantum dots into the active area of the detector. Using this approach, we were able to extend the detector cutoff wavelength to ~6 ?m, allowing the coverage of the full midwave infrared (MWIR) transmission window. The quantum dot barrier infrared detector (QD-BIRD) shows infrared response at temperatures up to 225 K.
Solar Heat for Industrial Processes (SHIP) cavity receivers are capable of generating electricity or industrial process heat by absorbing thermal energy from solar radiation, focused on a small area. The concentration of solar radiation on the small area of the receiver enables the achievement of high temperatures (ranging from 400°C to 1,100°C) of a working fluid, thus making the SHIP technology thermodynamically comparable with conventional power plants. A volumetric receiver consists of a porous structure-generally made of silicon carbide or metal, which absorbs solar radiation and converts it into heat energy. Heat energy from the porous materials is then transferred to the fluid following through them. A volumetric receiver acts as a convective heat exchanger, transferring heat to the fluid through convection. Open-loop volumetric receivers work with air at atmospheric pressure and are suitable for single-cycle or multi-cycle energy plants. A Model Based Systems Engineering (MBSE) approach was used to develop a test bed at Sandia national Laboratories (SNL) capable of demonstrating an open-loop volumetric air receiver developed by General Electric Aerospace (GE Aerospace). This paper presents the development of the various MBSE methods, test bed, and testing operations for the GE air receiver, which was experimentally demonstrated to achieve 1,350°C for over 3 hours of operation and an approximate 70% receiver efficiency. By being able to achieve such high temperatures >1,000°C, this work provides the potential to support many SHIP industrial use cases.
Perovskite solar cells (PSCs) consisting of interfacial two- and three-dimensional heterostructures that incorporate ammonium ligand intercalation have enabled rapid progress toward the goal of uniting performance with stability. However, as the field continues to seek ever-higher durability, additional tools that avoid progressive ligand intercalation are needed to minimize degradation at high temperatures. We used ammonium ligands that are nonreactive with the bulk of perovskites and investigated a library that varies ligand molecular structure systematically. Here, we found that fluorinated aniliniums offer interfacial passivation and simultaneously minimize reactivity with perovskites. Using this approach, we report a certified quasi–steady-state power-conversion efficiency of 24.09% for inverted-structure PSCs. In an encapsulated device operating at 85°C and 50% relative humidity, we document a 1560-hour T85 at maximum power point under 1-sun illumination.
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Poster presentation on HOTSSTAR concept, design and initial on-sun test and evaluation of SiC air receiver design.
Operation of electronic parts and circuits under extreme temperatures is anticipated in NASA space exploration missions as well as terrestrial applications. Exposure of electronics to extreme temperatures and wide-range thermal swings greatly affects their performance via induced changes in the semiconductor material properties, packaging and interconnects, or due to incompatibility issues between interfaces that result from thermal expansion/contraction mismatch. Electronics that are designed to withstand operation and perform efficiently in extreme temperatures would mitigate risks for failure due to thermal stresses and, therefore, improve system reliability. In addition, they contribute to reducing system size and weight, simplifying its design, and reducing development cost through the elimination of otherwise required thermal control elements for proper ambient operation. A large DC voltage gain (100 dB) operational amplifier with a maximum junction temperature of 150 C was recently introduced by STMicroelectronics [1]. This LM2904WH chip comes in a plastic package and is designed specifically for automotive and industrial control systems. It operates from a single power supply over a wide range of voltages, and it consists of two independent, high gain, internally frequency compensated operational amplifiers. Table I shows some of the device manufacturer s specifications.
In this work, ultrawide bandgap Al 0.7 Ga 0.3 N MESFETs with refractory Tungsten Schottky and Ohmic contacts are studied in 300–675 K environments. Variable-temperature dc electrical transport reveals large ON-state drain current densities for an AlGaN device: 209 mA/mm at 300 K and 156 mA/mm at 675 K in the ON-state (25% reduction). Drain and gate currents are only weakly temperature-dependent, suggesting potential for engineering temperature invariant operation. The ON-/ OFF-ratio is limited by OFF-state leakage through the gate, which is attributed to damage from sputter deposition. Future work using refractory metals with larger work functions that are deposited by electron beam deposition is proposed.