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At least 37 records · Page 2

Response of the Verwey transition in magnetite to controlled point-like disorder induced by 2.5 MeV electron irradiation

Controlled point-like disorder induced by low temperature 2.5 MeV electron irradiation was used to probe the nature of the Verwey transition in magnetite, Fe 3 O 4 . Two large single crystals, one with optimal transition temperature, T V ≈ 121 K, and another with T V ≈ 109 K, as well as magnetite magnetosome nanocrystals harvested from the lysed cells of the marine magnetotactic vibrio Magnetovibrio blakemorei strain MV-1, T V ≈ 110 K, were examined. Temperature-dependent resistivity is consistent with the semiconductor-to-semiconductor (insulator) sharp, step-like Verwey transition from a state with a small bandgap of around 60 meV to a state with a large bandgap of about 300 meV. The irradiation causes an up-shift of the resistivity curves above the transition without transition smearing or broadening. It also causes an apparent down-shift of the resistivity maximum at high temperatures. In the lower crystal, the electron irradiation drives the transition temperature into a “forbidden” interval of T V , believed to separate the first order from the second order phase transition. Contrary to this belief, the transition itself remains sharp and hysteretic without a significant change in the hysteresis width indicating the strong 1st order character of the Verwey transition for all TV values. The separate 2nd order - looking transition is likely due to sample inhomogeneities. Here we conclude that the sudden change of the bandgap accompanied (or driven) by the monoclinic distortion and the change of magnetic anisotropy is the reason for the Verwey transition in magnetite and the effect of additional disorder is mostly in the smearing of the sharp gap edges near the Fermi level.

36 MATERIALS SCIENCE↗

Performance of GaAs concentrator cells under electron irradiations from 0.4 to 2.3 MeV

Gallium arsenide concentrator cells were irradiated with electrons with energies varying from 0.4 to 2.3 MeV, and their electrical performance was measured. The cells are 5 x 5 mm square with a 4-mm diameter illuminated area. At each of four different electron energy levels (0.4, 0.7, 1.0, and 2.3 MeV), three n/p and two p/n cells were irradiated. I-V performance measurements were made prior to irradiation and at several intermediate fluence levels. The final fluence level was 3 X 10 to the 15th e/sq cm. It is concluded that the power degradation is independent of the temperature at which it is measured.

Curtis, Henry B.↗

EPR and transient capacitance studies on electron-irradiated silicon solar cells

One and two ohm-cm solar cells irradiated with 1 MeV electrons at 30 C were studied using both EPR and transient capacitance techniques. In 2 ohm-cm cells, Si-G6 and Si-G15 EPR spectra and majority carrier trapping levels at (E sub V + 0.23) eV and (E sub V + 0.38) eV were observed, each of which corresponded to the divacancy and the carbon-oxygen-vacancy complex, respectively. In addition, a boron-associated defect with a minority carrier trapping level at (E sub C -0.27) eV was observed. In 1 ohm-cm cells, the G15 spectrum and majority carrier trap at (E sub V + 0.38) eV were absent and an isotropic EPR line appeared at g = 1.9988 (+ or - 0.0003); additionally, a majority carrier trapping center at (E sub V + 0.32) eV, was found which could be associated with impurity lithium. The formation mechanisms of these defects are discussed according to isochronal annealing data in electron-irradiated p-type silicon.

Lee, Y. H.↗

Electron irradiation tests on European meteorological satellite

The observation of in orbit anomalies on Meteosat resulted in a test being performed to establish the charging and discharging characteristics of a flight configured engineering model when irradiated with electrons. Surface potentials were measured together with discharge rates and amplitudes. Results indicate that a large number of discharges are possible on the satellite whether or not the external surfaces are grounded. Initial measurements show that there are very high potential gradients around the satellite which obviously contribute largely to the discharging behavior. The time constant for charging is very small, indicating also that equilibrium conditions are achieved very quickly as the local ambient changes in orbit. A.R.H.

Reddy, J.↗

Influence of oxygen on defect production in electron-irradiated, boron-doped silicon

Deep level transient spectroscopy (DLTS) measurements were made on float-zone and crucible-grown, boron-doped silicon irradiated with 1-MeV electrons. The minority carrier trap attributed to a boron-related state, was not seen in low-resistivity, float-zone silicon. However, a new majority carrier trap was observed in these samples. In the case of more lightly doped material the minority carrier trap was present, and its introduction rate was lower in float-zone than in crucible-grown silicon. For 1- and 10-ohm-cm float-zone material that was oxidized during processing, the introduction rates for this trap were comparable to those for crucible-grown silicon. This behavior indicates that the minority carrier trap involves oxygen and that it may be due to a boron-oxygen complex. The majority carrier trap seen in heavily doped, float-zone silicon may also involve boron but not oxygen. Observed trap concentrations suggest that oxygen content in the regions examined by DLTS is affected by processing techniques. Other differences were observed in defect production and annealing behavior of electron-irradiated, float-zone and crucible-grown silicon.

Deangelis, H. M.↗

London penetration depth of electron-irradiated Ba 0 . 47 K 0 . 53 Fe 2 As 2

We have characterized an electron-irradiated Ba 1-x K x Fe 2 As 2 (x = 0.53) single-crystal using two different experimental techniques: magneto-optic measurements and microwave measurements. The crystal has been measured before as well as after the 2.5 MeV electron irradiation process. After irradiation it was annealed in a number of steps, between 90 °C and 180 °C, and measured after each annealing step. Most microwave measurements were performed by means of a copper cavity, taking advantage of the TE 011 and TM 110 modes, allowing for the determination of the London penetration depths changes δλ ab (T) and δλ c (T), ie perpendicular and parallel to the sample c-axis. Appropriate equations, based on perturbation theory, were derived to calculate the penetration depths changes δλ ab and δλ c for a rectangular prism geometry. The sample showed a full recovery of its T c , however the observed behavior of δλ c and δλ ab was not monotonic vs annealing temperature, displaying a minimum of δλ c and δλ ab at 120 °C. In conclusion, this finding was confirmed by magneto-optic measurements, where besides verifying the sample uniformity and the absence of visible defects, the lower critical field H c1 of the Ba 1-x K x Fe 2 As 2 single-crystal was obtained and the London penetration depth λab(0) was calculated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Growth of the 889 per cm infrared band in annealed electron-irradiated silicon

Isothermal annealing of electron-irradiated Czochralski silicon has been studied at four different temperatures ranging from 304 to 350 C using infrared spectroscopy. At annealing temperatures above 300 C the irradiation-induced band at 830 per cm, usually attributed to a vacancy-oxygen complex (the A center), disappears and a new band at 889 per cm grows up. Within the experimental accuracy, the activation energy for the growth of this band is found to be identical with the value given by Stavola et al. for 'anomalous' oxygen diffusion in silicon. Also the frequency factors for the two processes are in reasonable agreement. The results show that a vacancy-assisted process may provide an explanation for enhanced motion of oxygen in silicon.

Svensson, B. G.↗

Structural Tolerance of Zirconium Diboride under Electron Irradiation through in-situ Convergent Beam Electron Diffraction and Energy-dispersive X-ray Spectroscopy

Zirconium diboride (ZrB 2 ) is a ultra-high temperature ceramic with high melting temperature (>3000 K), super strength and hardness, good thermal conductivity, and excellent resistance to plasma erosion and chemical erosion, being widely applied in hypersonic flight, arc-electrodes, refractory materials, and plasma-facing materials in fusion reactors. Therefore, the structural stability of the material is essential for the applications. Up to now, the material was investigated under neutron irradiation and high-energy ion irradiations. It was reported that the neutron irradiation caused swelling and catastrophic cracking. High-energy ions (30 keV He + ) changed the surface morphology and caused the bright blue and brown colors on ZrB 2 surfaces between 920 K and 1120 K. The electron irradiation tolerance of the material has not been reported yet. Here we used convergent beam electron diffraction (CBED) and energy-dispersive X-ray spectroscopy (EDS) to investigate structural tolerances of ZrB 2 crystals under high-energy electrons at room temperature under vacuum. Finally, the investigation would benefit the understanding of its structural tolerance at microscales.

42 ENGINEERING↗

DLTS analysis of radiation-induced defects in one-MeV electron irradiated germanium and Alsub0.17Gasub0.83As solar cells

The radiation-induced deep-level defects in one-MeV electron-irradiated germanium and AlxGal-xAs solar cell materials using the deep-level transient spectroscopy (DLTS) and C-V techniques were investigated. Defect and recombination parameters such as defect density and energy levels, capture cross sections and lifetimes for both electron and hole traps were determined. The germanium and AlGaAs p/n junction cells were irradiated by one-MeV electrons. The DLTS, I-V, and C-V measurements were performed on these cells. The results are summarized as follows: (1) for the irradiated germanium samples, the dominant electron trap was due to the E sub - 0.24 eV level with density around 4x10 to the 14th power 1/cu cm, independent of electron fluence, its origin is attributed to the vacancy-donor complex defect formed during the electron irradiation; (2) in the one-MeV electron irradiated Al0.17Ga0.83 as sample, two dominant electron traps with energies of Ec-0.19 and -0.29 eV were observed, the density for both electron traps remained nearly constant, independent of electron fluence. It is shown that one-MeV electron irradiation creates very few or no new deep-level traps in both the germanium and AlxGa1-xAs cells, and are suitable for fabricating the radiation-hard high efficiency multijunction solar cells for space applications.

Li, S. B.↗

The effect of electron irradiation on YBa2Cu3O(x) with gold bead contacts

The effect of 1-MeV electron irradiation, up to a total dose of 5.7 x 10 to the 17th electrons/sq cm at room temperature on YBa2Cu3O(x) was investigated using gold bead contacts made by the melting technique. The superconducting transition temperature Tc, the critical current density Jc at 77 K, the normal-state resistivity, and the contact resistance for gold bead contacts were measured as a function of fluence on the same samples without disturbing the contacts. Tc remained constant at 91 K, and Jc at 77 K remained constant around 90 A/sq cm. The normal-state resistivity increased systematically by about 15 percent for the total dose. Finally, the surface contact resistance at 77 K remained less than 4.2 microohm sq cm throughout the radiations. These studies took place over an 8-month period, and subsequent measurements indicate that the results are definitely due to radiation effects and not aging effects. It is concluded that the superconductor YBa2Cu3O(x) with gold bead contacts would perform well in a space environment of electron irradiation.

Caton, R.↗

Effects of Electron Irradiation on Candidate Materials for Target Window in Accelerator-Driven Mo-99 Production

Room-temperature (RT) axial tensile tests were conducted in 2018 and 2021 with flat, sub-sized, dog-boned samples of non-irradiated and irradiated Inconel 718 and irradiated beryllium (Be). The sample gauge length was 7.62 mm. Tensile properties of interest are the engineering yield stress (YS), ultimate tensile stress (UTS), uniform elongation (UE) and total elongation (TE). The electron dose of the 2021 samples was ≈2 times the dose of samples tested in 2018. Relative dose rates of 0, 1 (2018), and 2 (2021) are assigned to these samples. The 2021 electron-irradiated Be samples were brittle with a low failure stress of 338±64 MPa based on two samples. The failures occurred in the gauge section. The 2018 results for electron-irradiated Be indicated a slight decrease in ductility and strength for the one electron-irradiated sample that failed in the gauge section.

38 RADIATION CHEMISTRY, RADIOCHEMISTRY, AND NUCLEA↗

Electron irradiation reveals robust fully gapped superconductivity in LaNiGa 2

The effects of 2.5-MeV electron irradiation were studied in the superconducting phase of single crystals of LaNiGa 2 , using measurements of electrical transport and radio-frequency magnetic susceptibility. The London penetration depth is found to vary exponentially with temperature, suggesting a fully gapped Fermi surface. The inferred superfluid density is close to that of a single-gap weak-coupling isotropic s – wave superconductor. Superconductivity is extremely robust against nonmagnetic point-like disorder induced by electron irradiation. Our results place strong constraints on the previously proposed triplet pairing state by requiring fine-tuned impurity scattering amplitudes and are most naturally explained by a sign-preserving, weak-coupling, and approximately momentum-independent singlet superconducting state in LaNiGa 2 , which does not break time-reversal symmetry. Finally, we discuss how our findings could be reconciled with previous measurements that indicated magnetic signatures in the superconducting phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Radiolytic Impacts of Energetic Electron Irradiation on Enceladus and Mimas

Episodic overturn of the south polar terrain on Enceladus would convey radio lytic oxidants from surface irradiation by Saturn's inner magnetospheric electrons to the putative underlying polar sea and contribute to CO2 and other gas production driving the visibly active cryovolcanism. Low duty cycle of active episodes below 1 - 10 percent would raise the relative importance of the continuous radiolytic chemical energy input for mass and heat outflow, e.g. as compared to heating by gravitational tides. The "Pac-Man" thermal anomaly on Mimas most likely arises from leading-trailing asymmetry of electron irradiation and resultant radio lytic processing of the moon ice to a few centimeters of depth. The Mimas thermal anomaly distribution suggests a relatively stable surface unmodified by Enceladus-like geologic overturn or cryovolcanic activity. In both cases, the heavily irradiated skin depth corresponds to the sensible thermal layer probed by Cassini infrared measurements. Neutral gas and dust emissions from Enceladus limit energetic ion and plasma electron fluxes in the inner magnetosphere, thereby governing the irradiation of Mimas and other Saturn moons.

Cooper, J. F.↗

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗

Grown-in defects and defects produced by 1-Me electron irradiated in Al0.3Ga0.7As P-N junction solar cells

Studies of grown-in defects and defects produced by the one-MeV electron irradiation in Al sub 0.3 Ga sub 0.7As p-n junction solar cells fabricated by liquid phase epitaxial (LPE) technique were made for the unirradiated and one-MeV electron irradiated samples, using DLTS and C-V methods. Defect and recombination parameters such as energy level, defect density, carrier capture cross sections and lifetimes were determined for various growth, annealing, and irradiation conditions.

Li, S. S.↗