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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Performance of AlGaAs, GaAs and InGaAs cells after 1 MeV electron irradiation

Electron irradiations were made on three different types of III-V cells. AlGaAs, GaAs, and InGaAs cells with bandgaps of approximately 1.72, 1.43, and 1.1 eV, respectively, were tested. All of the cells were concentrator cells and performance data from one sun to beyond 100x AMO were taken. The total 1 MeV electron fluence was 3 times 10 to the 15th power e/square cm with data taken at several intermediate fluences. Cell performance is presented as a function of electron fluence for various concentration ratios and two different temperatures (25 and 80 C). Since these three cell types are potential candidates for the individual cells in a cascade structure, it is possible to calculate the loss in performance of cascade cells under 1 MeV irradiation. Data are presented which show the calculated performance of both series-connected and separately connected cascade cells.

Curtis, Henry B.↗
NASA NTRS1981

Investigation of solar cells fabricated on low-cost silicon sheet materials using 1 MeV electron irradiation

The use of high energy electron irradiation is investigated as a controlled means to study in more detail the junction depletion layer processes of solar cells made on various low-cost silicon sheet materials. Results show that solar cells made on Czochralski grown silicon exhibit enhancement of spectral response in the shorter wavelength region when irradiated with high energy electrons. The base region damage can be reduced by subsequent annealing at 450 C which restores the degraded longer wavelength response, although the shorter wavelength enhancement persists. The second diode component of the cell dark forward bias current is also reduced by electron irradiation, while thermal annealing at 450 C without electron irradiation can also produce these same effects. Electron irradiation produces small changes in the shorter wavelength spectral responses and junction improvements in solar cells made on WEB, EFG, and HEM silicon. It is concluded that these beneficial effects on cell characteristics are due to the reduction of oxygen associated deep level recombination centers in the N(+) diffused layer and in the junction.

Kachare, A. H.↗
NASA NTRS1981

Annealing and anomalous high-energy electron irradiation effects in low-cost silicon N+P solar cells

Silicon solar cells of N(+)P type were subjected to 1 MeV electron irradiation (up to 10 to the 16th electrons/sq cm) and then annealed at 450 C for 20 min or annealed with no electron irradiation. Electron irradiation resulted in a degradation of longer wavelength cell response, but produced a marked enhancement of response at shorter wavelengths with a peak change of 40% at 0.44 microns. Subsequent thermal anneal at 450 C reduced the long-wavelength degradation, but enhancement at shorter wavelengths persisted. Excitation at the shorter wavelengths was in the N(+)-diffused layer and in the junction region of the cell. Anneal of unirradiated cells produced shorter-wavelength enhancement with a similar peaking at 0.44 microns, but with a relative change of only 20%. More enhancement was produced in the longer wavelength region (up to 0.8 microns). These effects in the different cell regions are explained by a decrease in the interstitial oxygen-impurity complexes (deep recombination levels) and the formation of substantial oxygen-silicon vacancy centers (donors).

Garlick, G. F. J.↗
DOE OSTI2026

Electron-irradiation induced creep in amorphous alloys

Electron-irradiation induced creep rates in amorphous alloys, a-SiO2, Fe79B16Si5, Cu60Ta40, and Cu50Ti50, were measured at room temperature using a miniaturized beam-bending apparatus within a transmission electron microscope operated at 200 keV. The creep rates of these amorphous samples increased nearly linearly with both e-beam current density and applied stress, while a reference crystalline (c-)SiO2 sample failed to creep under the same conditions. The irradiation induced creep compliance of a-SiO2 was ~ 15 times larger than that of Fe79B16Si5 and over 1,000 times larger than that of the two Cu alloys. Molecular dynamics computer simulations were employed to simulate electron irradiation induced creep using interatomic potentials representing amorphous Cu75Zr25, Ni80P20, and SiO2 as model systems. The irradiation induced creep compliances calculated for Cu75Zr25 during 200 keV electron irradiation provided good quantitative agreement with the two Cu-based alloys, but that for a-SiO2 was ~ 180 times too small. These results indicate that unlike neutron or ion-beam induced creep in a-SiO2, creep under electron irradiation is dominated by the effects of ionization owing largely to the far higher ratio of electronic stopping to nuclear stopping for electrons than for ions.

36 MATERIALS SCIENCE↗
NASA NTRS1981

Bulk charging and breakdown in electron-irradiated polymers

High energy electron irradiations were performed in an experimental and theoretical study of ten common polymers. Breakdowns were monitored by measuring currents between the electrodes on each side of the planar samples. Sample currents as a function of time during irradiation are compared with theory. Breakdowns are correlated with space charge electric field strength and polarity. Major findings include evidence that all polymers tested broke down, breakdowns remove negligible bulk charge and no breakdowns are seen below 20 million V/m.

Frederickson, A. R.↗
NASA NTRS1987

Effect of 1.0 MeV electron irradiation on shunt resistance in Si-MINP solar cells

Shunt resistance from 100 K to 400 K is compared for diffused and ion implanted cells before and after irradiation. R sub sh decreases from greater than 10 to the 7th power omega-square cm for T less than 250 K to 10 to the 4th power omega-square cm at 400 K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R sub sh for T greater than 250 K. Ion implanted cells exhibit a similar trend except that R sub sh is significantly less for T less than 250 K and is more sensitive to irradiation at these low temperatures. The mechanism of R sub sh appears to be a combination of multistep tunneling and trapping - detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R sub sh.

Anderson, Wayne A.↗
NASA NTRS1972

Measurements of the UV and VUV transmission of optical materials during high energy electron irradiation

An experimental program was conducted in which the optical transmission of several transparent materials was measured during high energy electron irradiation. These experiments were conducted using the Dynamitron electron accelerator as a continuous source of 1.5 MeV electrons and the LINAC electron accelerator as a pulsed source of 5-7 MeV electrons. The experimental program consisted of three major portions. The first portion, the optical transmission of fused silica, BeO, MgF2, and LiF was measured at vacuum ultraviolet wavelengths in the range 1550-2000 A during ambient temperature, 1.5 MeV electron irradiation at ionizing dose rates to 0.5 Mrad/sec. In the second portion of the program, the optical transmission of fused silica and BeO was measured in the range 2000-3000 A during high dose rate, elevated temperature 1.5 MeV electron irradiation. In particular, accurate measurements of the optical transmission were made at ionizing dose rates as high as 10 Mrad/sec. In the final portion of the program, the optical transmission of fused silica and BeO was measured in the wavelength range 2000-3000 A during pulsed 5 and 7 MeV electron irradiation from the LINAC accelerator. The maximum time averaged ionizing dose rate was limited to 0.75 Mrad/sec due to accelerator limitations.

Palma, G. E.↗
NASA NTRS1975

Photomultiplier window materials under electron irradiation - Fluorescence and phosphorescence

The fluorescence and phosphorescence of photomultiplier window materials under electron irradiation have been investigated using a Sr-90/Y-90 beta emitter as the electron source. Spectral emission curves of UV-grade, optical-grade, and electron-irradiated samples of MgF2 and LiF, and of CaF2, BaF2, sapphire, fused silica, and UV-transmitting glasses were obtained over the 200-650-nm spectral range. Fluorescence yields were determined on these materials utilizing photomultiplier tubes with cesium telluride, bialkali, and trialkali (S-20) photocathodes, respectively. Optical-grade MgF2 and LiF, as well as electron-irradiated UV-grade samples of these two materials, show enhanced fluorescence due to color-center formation and associated emission bands in the blue and red wavelength regions. Large variations in fluorescence intensities were found in UV-grade sapphire samples of different origins, particularly in the red end of the spectrum, presumably due to various amounts of chromium-ion content. Phosphorescence decay with time is best described by a sum of exponential terms, with time constants ranging from a few minutes to several days.

Viehmann, W.↗
NASA NTRS1974

Fluorescence and phosphorescence of photomultiplier window materials under electron irradiation

The fluorescence and phosphorescence of photomultiplier window materials under electron irradiation were investigated using a Sr-90/Y-90 beta emitter as the electron source. Spectral emission curves of UV grade, optical grade, and electron-irradiated samples of MGF2 and LiF, CaF2, BaF2, sapphire, fused silica, and UV transmitting glasses were obtained over the spectral range of 200 nm to 650 nm. Fluorescence yields, expressed as the number of counts in a solid angle of 2 pi steradian per 1MeV of incident electron energy deposited, were determined on these materials utilizing photomultiplier tubes with cesium telluride, bialkali, and trialkali (S-20) photocathodes, respectively.

Viehmann, W.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗