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At least 37 records · Page 2

All sources NASA NTRS DOE OSTI

NASA NTRS2002

Modelling the effect of diffuse light on canopy photosynthesis in controlled environments

A layered canopy model was used to analyze the effects of diffuse light on canopy gross photosynthesis in controlled environment plant growth chambers, where, in contrast to the field, highly diffuse light can occur at high irradiance. The model suggests that high diffuse light fractions (approximately 0.7) and irradiance (1400 micromoles m-2 s-1) may enhance crop life-cycle canopy gross photosynthesis for hydroponic wheat by about 20% compared to direct light at the same irradiance. Our simulations suggest that high accuracy is not needed in specifying diffuse light fractions in chambers between approximately 0.7 and 1, because simulated photosynthesis for closed canopies plateau in this range. We also examined the effect of leaf angle distribution on canopy photosynthesis under growth chamber conditions, as these distributions determine canopy extinction coefficients for direct and diffuse light. We show that the spherical leaf angle distribution is not suitable for modeling photosynthesis of planophile canopies (e.g., soybean and peanut) in growth chambers. Also, the absorption of the light reflected from the surface below the canopy should generally be included in model simulations, as the corresponding albedo values in the photosynthetically active range may be quite high in growth chambers (e.g., approximately 0.5). In addition to the modeling implications, our results suggest that diffuse light conditions should be considered when drawing conclusions from experiments in controlled environments.

Non-NASA Center↗

NASA NTRS1982

Radar scattering from a diffuse vegetation layer over a smooth surface

A simple model is presented for the oblique backscatter and bistatic scatter from a smooth surface overlain by a diffuse layer. Only single scattering in the diffuse layer is taken into account. The model analysis shows that the combination of volume scattering and oblique reflection at the surface may increase appreciably the waves scattering. The scattering strongly depends on the properties of the smooth surface. These results support some of the observations made with the Seasat spaceborne imaging radar over flooded regions with heavy vegetation cover.

Engheta, N.↗

NASA NTRS1994

On the Influence of a Fuel Side Heat-Loss (Soot) Layer on a Planar Diffusion Flame

A model of the response of a diffusion flame (DF) to an adjacent heat loss or 'soot' layer on the fuel side is investigated. The thermal influence of the 'soot' or heat-loss layer on the DF occurs through the enthalpy sink it creates. A sink distribution in mixture-fraction space is employed to examine possible DF extinction. It is found that (1) the enthalpy sink (or soot layer) must touch the DF for radiation-induced quenching to occur; and (2) for fuel-rich conditions extinction is possible only for a progressively narrower range of values ot the characteristic heat-loss parameter, N(sub R)(Delta Z(sub R)) Various interpretations ot the model are discussed. An attempt is made to place this work into the context created by previous experimental and computational studies.

Wichman, Indrek S.↗

DOE OSTI2020

Observed volatilization behavior of silicon carbide in flowing hydrogen above 2000 K

In this work, the intrinsic compatibility of silicon carbide (SiC) and hydrogen (H 2 ) at high temperatures (2000-2473 K) and pressure near one atmosphere was evaluated through a combination of thermodynamic calculations and hot hydrogen exposure testing. Thermodynamic calculations predict the decomposition of SiC in a hydrogen environment to form free silicon (Si) and free carbon (C). Free Si is predicted to vaporize from the surface as a volatile species, while free C may interact with H 2 to form the hydrocarbons CH 4 (T < 2100 K) or C 2 H 2 (T > 2100 K). Coupons of high purity chemical vapor deposition (CVD) β-SiC were exposed to slowly flowing hydrogen at temperatures ranging between 2000 and 2473 K. SiC experienced active attack as the result of H 2 exposure, exhibiting linear weight loss kinetics and an Arrhenius dependence of weight loss on exposure temperature. The linear volatilization constant was experimentally evaluated to correspond with an activation energy of 370 ± 18 kJ/mol. Due to the dependence of observed corrosion rates on gas velocity, corrosion of SiC in flowing H 2 was determined to be governed by external mass transfer of volatile Si species through the boundary layer. Experimentally derived mass losses were in good agreement with mass losses predicted by a boundary layer limited gas diffusion model.

36 MATERIALS SCIENCE↗

NASA NTRS1987

Effect of double layers on magnetosphere-ionosphere coupling

The Earth's auroral zone contains dynamic processes occurring on scales from the length of an auroral zone field line which characterizes Alfven wave propagation to the scale of microscopic processes which occur over a few Debye lengths. These processes interact in a time-dependent fashion since the current carried by the Alfven waves can excite microscopic turbulence which can in turn provide dissipation of the Alfven wave energy. This review will first describe the dynamic aspects of auroral current structures with emphasis on consequences for models of microscopic turbulence. A number of models of microscopic turbulence will be introduced into a large-scale model of Alfven wave propagation to determine the effect of various models on the overall structure of auroral currents. In particular, the effects of a double layer electric field which scales with the plasma temperature and Debye length is compared with the effect of anomalous resistivity due to electrostatic ion cyclotron turbulence in which the electric field scales with the magnetic field strength. It is found that the double layer model is less diffusive than in the resistive model leading to the possibility of narrow, intense current structures.

Lysak, Robert L.↗

NASA NTRS1990

Thermal diffusivity of diamond films

A laser pulse technique to measure the thermal diffusivity of diamond films deposited on a silicon substrate is developed. The effective thermal diffusivity of diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by the laser pulses. An analytical model is developed to calculate the effective in-plane (face-parallel) diffusivity of a two layer system. The model is used to reduce the effective thermal diffusivity of the diamond/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film. Phase and amplitude measurements give similar results. The thermal conductivity of the films is found to be better than that of type 1a natural diamond.

Albin, Sacharia↗

NASA NTRS1980

Mercury in a thin layer in HgMn stars - A test of a diffusion model

Lines of the first three states of ionization of mercury have been observed in Mu Leporis and Chi Lupi using the Copernicus satellite. Lines of Hg II and Hg III have been observed in Alpha Andromedae. There appears to be an absorption feature at every wavelength where there is expected to be a mercury line. The presence of all three states of ionization is likely in Mu Lep and Chi Lup. The relative equivalent widths of the lines of the various states of ionization do not depend on the effective temperature of the stars, in contradiction to what is expected if mercury were uniformly distributed in the atmosphere. It is, however, expected if mercury has been concentrated, by diffusion, in a thin layer, where the radiative forces just equal the gravitational forces on mercury. That mercury should be so concentrated is also required by the explanation of the mercury isotope anomaly proposed by Michaud, Reeves, and Charland.

Megessier, C.↗

NASA NTRS1990

Thermal diffusivity of diamond films using a laser pulse technique

Polycrystalline diamond films were deposited using a microwave plasma-enhanced chemical vapor deposition process. A laser pulse technique was developed to measure the thermal diffusivity of diamond films deposited on a silicon substrate. The effective thermal diffusivity of a diamond film on silicon was measured by observing the phase and amplitude of the cyclic thermal waves generated by laser pulses. An analytical model is presented to calculate the effective in-plane (face-parallel) diffusivity of a two-layer system. The model is used to reduce the effective thermal diffusivity of the diamonds/silicon sample to a value for the thermal diffusivity and conductivity of the diamond film. The average effective diffusivity values are 1.47 + or - 0.03 and 1.83 + or - 0.10 yielding thermal diffusivity values of 7.46 + or - 0.90 and 7.33 + or - 0.70 sq cm/s respectively, for the two samples; the calculated thermal con ductivity values are 13.50 and 13.28 W/cmK, which are better than that of type 1a natural diamond. The phase and amplitude measurements give similar results.

Albin, Sacharia↗

DOE OSTI2025

Modeling diffusion and depletion in high-aspect-ratio atomic layer deposition processes: Process parameters and manufacturing impacts

Atomic layer deposition (ALD) is a powerful technique for modifying the surface chemistry and properties of substrates with complex and nonplanar topologies. However, achieving uniform and conformal deposition on ultrahigh-aspect-ratio substrates remains challenging, typically requiring large quantities of precursors and long exposure times. Furthermore, process optimization is often performed empirically and involves substantial trial and error. In this work, we perform a combined experimental and computational study of ALD Al 2 O 3 infiltration into silica aerogel monoliths (aspect ratio >10 5 ). A reaction-diffusion model is used to explore the effects of key processing parameters, namely, exposure time per dose, precursor source temperature, number of aerogels in the reactor, and reactor volume. The model is based on quasi-static mode ALD, where the dosed precursor is held in the chamber for a fixed period of time before purging. We analyze the trade-offs between process throughput and precursor utilization for each of these parameters. Furthermore, we investigate the co-optimization and interactions between multiple process parameters, demonstrating the potential for further improvements. Furthermore, this physics-based model can be used to identify a set of process parameters for high-aspect-ratio ALD that meet specific manufacturing objective functions, including throughput, cost, and sustainability.

Aerogel↗

NASA NTRS1992

Reaction layer formation at the graphite/copper-chromium alloy interface

Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, auger electron spectroscopy, and x ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.

Devincent, Sandra M.↗

NASA NTRS1993

Reaction layer formation at the graphite/copper-chromium alloy interface

Sessile drop tests were used to obtain information about copper chromium alloys that suitably wet graphite. Characterization of graphite/copper-chromium alloy interfaces subjected to elevated temperatures were conducted using scanning electron micrography, energy dispersive spectroscopy, Auger electron spectroscopy, and X-ray diffraction analyses. These analyses indicate that during sessile drop tests conducted at 1130 C for one hour, copper alloys containing greater than 0.98 percent chromium form continuous reaction layers of approximately 10 micron thickness. The reaction layers adhere to the graphite surface. The copper wets the reaction layer to form a contact angle of 60 degrees or less. X-ray diffraction results indicate that the reaction layer is chromium carbide. The kinetics of reaction layer formation were modelled in terms of bulk diffusion mechanisms. Reaction layer thickness is controlled initially by the diffusion of Cr out of Cu alloy and later by the diffusion of C through chromium carbide.

Devincent, Sandra M.↗

NASA NTRSDate not supplied

Improving Ocean Reanalyses and ENSO Forecasts By Assimilation of Rain-Corrected Satellite Sea Surface Salinity Using the GMOA S2s Forecast System

The ENSO phenomenon has a significant global socio-economic impact and has been the key focus for improving coupled ocean-atmosphere forecasts. Assimilation of satellite altimetry and subsurface temperature and salinity from (mostly) Argo help improve the initialization of the thermocline, while satellite SST aids in constraining surface heat-fluxes, leading to improved coupled system sub-seasonal to seasonal forecasts. However, few studies have focused on improving the near-surface density and mixing through satellite sea surface salinity (SSS) assimilation. The few ocean models that assimilate satellite SSS, bias correct to normalize towards the near-surface Argo data for expediency. This assumption is likely inadequate in rainy regions, where buoyant water forms a fresh surface lens. In previous work, we showed that adjusting SSS to bulk salinity (Sb) using the Rain Impact Model (RIM) of Santos-Garcia et al., 2014 improves the near-surface density and mixed layer depth, leading to deeper thermocline and improved NINO3.4 SST forecasts. We now utilize the Soil Moisture and Ocean Salinity rain-corrected (SMOS_RC) SSS, available in SMOS-CATDS products, to represent Sb more accurately at the first model layer (e.g., 5 m). Rather than a diffusivity model as RIM, SMOS_RC uses a statistical correction dependent on Integrated Multi-satellitE Retrievals for GPM (IMERG) rain rates, established on observed SMOS SSS decreases related to Sb in the presence of rain (Supply et al., 2020). For all experiments, all available along-track absolute dynamic topography and in situ observations are assimilated using the LETKF scheme (Penny et al., 2013). One reanalysis additionally assimilates SMOS SSS data as is, and a separate reanalysis assimilates SMOS_RC. We assess the impact on near-surface and subsurface dynamics by validating against observations and explore how SSS assimilation (SMOS vs SMOS_RC) impacts ENSO forecasts using the NASA GMAO Sub-seasonal to Seasonal coupled forecast system (S2S-v3, Molod et al. 2020). We show that improved estimates of density and near-surface mixing led to more accurate coupled air/sea interaction and better ENSO forecasts. The increased SSS, resulting from the removal of the instantaneous rain effect, modifies the ocean state by enhancing mixing and deepening the thermocline.

Veronica Ruiz Xomchuk↗

DOE OSTI2024

Synthesis, Processing, and Use of Isotopically Enriched Epitaxial Oxide Thin Films

Isotopic engineering has emerged as a key approach to study the nucleation, diffusion, phase transitions, and reactions of materials at an atomic level. It aims to uncover mass transport pathways, kinetics, and operational and failure mechanisms of functional materials and devices. Understanding these phenomena leads to deeper insights into important physical processes, such as the transport of ions in energy conversion and storage devices and the role of active sites and supports during heterogeneous catalytic reactions. Likewise, isotopic engineering is being pursued as a means of modifying functionality to enable future technological applications. In this Account, we summarize our recent work employing isotope labeling (e.g., 18 O 2 and 57 Fe) during thin film synthesis and postgrowth processing to reveal growth mechanisms, defect chemistry, and elemental diffusion under working and extreme conditions. Isotope-resolved analysis techniques with nanometer-scale spatial resolution, such as time-of-flight secondary ion mass spectrometry and atom probe tomography, facilitate the accurate quantification of isotopic placement and concentration in our well-defined heterostructures with precisely positioned, isotope-enriched layers. By measuring the nanometer-scale redistribution between natural abundance and isotopically enriched oxygen layers during the deposition of Fe 2 O 3 and Cr 2 O 3 by molecular beam epitaxy, we identified intermixing processes driven by surface adatoms occurring both at the film growth surface and within the first few layers below the surface. Further insights into synthesis mechanisms were gained by studying the tungsten oxide thin films grown by evaporating WO 3 powder in the presence of background 18 O 2 , revealing minimal incorporation of background oxygen during the film formation process. Thermal and radiation-enhanced diffusion in epitaxial Fe and Cr oxides were precisely tracked using 18 O and 57 Fe tracer layers incorporated into model epitaxial oxide thin films. This approach has allowed us to access thermal diffusion behavior at lower temperatures than previously measured, revealing a potential changeover in diffusion mechanism. Understanding radiation-enhanced diffusion in model oxides that represent the surface layers on the structural components of nuclear reactors informs our understanding of their corrosion behavior under irradiation. Isotopic labeling can also provide unique insights into the surface exchange reactions and defect chemistry of electrocatalysts. For instance, tracking the change in 18 O concentration at the surface of an epitaxial LaNiO 3 thin film after the electrocatalytic oxygen evolution reaction revealed the participation of lattice oxygen, confirming a hypothesis that had been proposed previously. Lastly, we highlight a new direction wherein we perform in situ processing studies utilizing isotopic tracers in conjunction with model epitaxial thin films within the atom probe tomography instrument. Additionally, this Account illustrates the great potential of isotopic engineering to enable fundamental mechanistic insights into physical processes and engineer functional properties in epitaxial films, heterostructures, and superlattices.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Two-fluid and kinetic transport physics of Kelvin–Helmholtz instabilities in nonuniform low-beta plasmas

Hall-magnetohydrodynamic (Hall-MHD) theory, two-fluid simulations, and kinetic simulations are used in this work to investigate the cross-field transport properties of Kelvin–Helmholtz instabilities in nonuniform low-beta collisionless plasmas. Hall-MHD analysis shows how the linear properties of the instability are modified by density gradients and magnetization. High-order accurate two-fluid and kinetic simulations, with complete dynamics of finite-mass electrons and ions, are applied to a suite of parameter cases to systematically assess the effects of diamagnetic drift, magnetization, charge separation, and finite Larmor motion. Initialization of exact two-species kinetic equilibria facilitates the study of isolated physical effects and enables detailed cross-comparisons between two-fluid and kinetic simulations, including for cases where ion gyroradii are comparable to gradient scale lengths. For nonuniform plasmas with significant space charge, the results of two-fluid and kinetic simulations are found to disagree with Hall-MHD predictions. Kelvin–Helmholtz instability growth rates, per unit shear, are shown to be smaller when ion diamagnetic drift and $E \times B$ drift are parallel and larger when the two drifts are antiparallel. The effect is attributed to polarization drift in the shear layer, which leads to redistribution of charge, alters the electric field that drives plasma advection, and consequently modifies growth rates. Instability-induced mass transport for different parameters is characterized in terms of the flux across the shear layer and a simplified diffusion model. Distribution functions from kinetic simulations are shown to deviate substantially from Maxwellian reconstructions, indicating the importance of kinetic physics during the nonlinear phase of the instability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

SIMS Investigation of Furnace-Baked Nb

Results recently published by Ito et al. showed that "furnace baking" Nb SRF cavities after electropolishing yields high quality factors and anti-Q-slopes resembling that of N doped cavities. Small Nb samples were prepared following the recipe outlined by Ito. These samples were measured by SIMS to examine impurity contributions to the RF penetration layer. These diffusion profiles are modeled, and their consequences on RF properties discussed.

Lechner, E. M.↗

DOE OSTI2021

SIMS Investigation of Furnace-Baked Nb

Lechner, E. M.↗

NASA NTRS1977

Experimental measurements of the ground cloud effluents and cloud growth for the May 20, 1975, Titan 3C launch at Air Force Eastern Test Range, Florida

The experiment included surface level and airborne in situ cloud measurements of the exhaust effluents from the Titan IIIC solid rocket boosters. Simultaneous visible spectrum photographic pictures of the ground cloud as well as infrared imaging of the cloud were obtained to study the cloud rise, growth, and direction of travel within the earth's surface mixing layer. The NASA multilayer diffusion model predictions of cloud growth, direction of travel, and expected surface level effluent concentrations were made prior to launch and after launch using measured meteorological conditions. Prelaunch predictions were used to position the effluent monitoring instruments, and the postlaunch predictions were compared with the measured data. Measurement results showed that surface level effluent values were low, often below the detection limits of the instrumentation. The maximum surface level hydrogen chloride concentration measured 50 parts per billion at about 8 km from the launch pad. The maximum observed in-cloud (airborne measurement) hydrogen chloride concentration was 7 per million.

Gregory, G. L.↗