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All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

A Performance Analysis on Soil Dielectric Models Over Organic Soils in Alaska for Passive Microwave Remote Sensing of Soil Moisture

Passive microwave remote sensing of soil moisture (SM) requires a physically based dielectric model that quantitatively converts the volumetric SM into the soil bulk dielectric constant. Mironov 2009 is the dielectric model used in the operational SM retrieval algorithms of the NASA Soil Moisture Active Passive (SMAP) and the ESA Soil Moisture and Ocean Salinity (SMOS) missions. However, Mironov 2009 suffers a challenge in deriving SM over organic soils, as it does not account for the impact of soil organic matter (SOM) on the soil bulk dielectric constant. To this end, we presented a comparative performance analysis of nine advanced soil dielectric models over organic soil in Alaska, four of which incorporate SOM. In the framework of the SMAP single-channel algorithm at vertical polarization (SCA-V), SM retrievals from different dielectric models were derived using an iterative optimization scheme. The skills of the different dielectric models over organic soils were reflected by the performance of their respective SM retrievals, which was measured by four conventional statistical metrics, calculated by comparing satellite-based SM time series with in-situ benchmarks. Overall, SM retrievals of organic-soil-based dielectric models tended to overestimate, while those from mineral-soil-based models displayed dry biases. All the models showed comparable values of unbiased root-mean-square error (ubRMSE) and Pearson Correlation (R), but Mironov 2019 exhibited a slight but consistent edge over the others. An integrated consideration of the model inputs, the physical basis, and the validated accuracy indicated that the separate use of Mironov 2009 and Mironov 2019 in the SMAP SCA-V for mineral soils (SOM < 15%) and organic soils (SOM ≥ 15%) would be the preferred option.

Soil Moisture↗
DOE OSTI2024

Lateral Beam Shifts and Depolarization Upon Oblique Reflection from Dielectric Mirrors

Abstract Dielectric mirrors comprising thin‐film multilayers are widely used in optical experiments because they can achieve substantially higher reflectance compared to metal mirrors. Here, potential problems are investigated that can arise when dielectric mirrors are used at oblique incidence, in particular for focused beams. It is found that light beams reflected from dielectric mirrors can experience lateral beam shifts, beam‐shape distortion, and depolarization, and these effects have a strong dependence on wavelength, incident angle, and incident polarization. Because vendors of dielectric mirrors typically do not share the particular layer structure of their products, several dielectric‐mirror stacks are designed and simulated, and then the lateral beam shift from two commercial dielectric mirrors and one coated metal mirror is also measured. This paper brings awareness of the tradeoffs between dielectric mirrors and front‐surface metal mirrors in certain optics experiments, and it is suggested that vendors of dielectric mirrors provide information about beam shifts, distortion, and depolarization when their products are used at oblique incidence.

Physics↗
DOE OSTI2023

Polarization consistent dielectric screening in polarizable continuum model calculations of solvation energies

A polarization consistent framework, where dielectric screening is affected consistently in polarizable continuum model (PCM) calculations, is employed for the study of solvation energies. The computational framework combines a screened range-separated-hybrid functional (SRSH) with PCM calculations, SRSH-PCM, where dielectric screening is imposed in both PCM self-consistent reaction field (SCRF) iterations and the electronic structure Hamiltonian. We begin by demonstrating the impact of modifying the Hamiltonian to include such dielectric screening in SCRF iterations by considering the solutions of electrostatically embedded Hartree–Fock (HF) exact exchange equations. Long-range screened HF-PCM calculations are shown to capture properly the linear dependence of gap energy of frontier orbitals on the inverse of the dielectric constant, whereas unscreened HF-PCM orbital energies are fallaciously semi-constant with respect to the dielectric constant and, therefore, inconsistent with the ionization energy gaps. Similar trends affect density functional theory (DFT) calculations that aim to achieve predictive quality. Importantly, the dielectric screened calculations are shown to significantly affect DFT- and HF PCM-based solvation energies, where screened solvation energies are smaller compared to the unscreened values. Importantly, SRSH-PCM, therefore, appears to reduce the tendency of DFT-PCM to overestimate solvation energies, where we find the effect to increase with the dielectric constant and the polarity of the molecular solute, trends that enhance the quality of DFT-PCM calculations of solvation energy. Understanding the relationship of dielectric screening in the Hamiltonian and DFT-PCM calculations can ultimately benefit on-going efforts for the design of predictive and parameter free descriptions of solvation energies.

Chemistry↗
NASA NTRS1980

An empirical model for the complex dielectric permittivity of soils as a function of water content

Recent measurements on the dielectric properties of soils have shown that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value at transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas reported in the literature were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of the soil-water mixtures. This model employs the mixing of either the dielectric constants or the refraction indices of ice, water, rock, and air, and treats the transition moisture value as an adjustable parameter. The calculated mixture dielectric constants from the model were found to be in reasonable agreement with the measured results over the entire moisture range of 0-0.5 cu cm/cu cm. The transition moistures derived from the model range from 0.16 to 0.33 and are strongly correlated with the wilting points of the soils estimated from their textures. This relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Wang, J. R.↗
NASA NTRS1991

Diurnal changes in the dielectric properties and water status of eastern hemlock and red spruce from Howland, ME

The diurnal characteristics of microwave dielectric properties and water potential of two conifer species were investigated in July and September, 1990. P-band and C-band radial dielectric profiles of hemlock and red spruce, as well as hemlock diurnal water potential and dielectric profiles, are presented. The resulting radial dielectric profiles matched the regions of the functional sapwood (water transport component of the active xylem) in both species such that the sapwood was characterized by a higher dielectric than the bark and heartwood tissues. This is probably due to characteristic differences in the water content of each tissue. As the hemlocks progressed through their diurnal water potential pattern, the dielectric profile remained static until mid-afternoon. As the tension in the water column relaxed (2 to 3 bars) the dielectric constant decreased by 30 to 40 percent. There are several possible explanations for this phenomenon, and these may relate to the dependency of the dielectric measurements on temperature, salinity, and volumetric water content.

Salas, W. A.↗
NASA NTRS2014

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Electronic packaging↗
NASA NTRS2012

Dielectric Performance of High Purity HTCC Alumina at High Temperatures - A Comparison Study with Other Polycrystalline Alumina

A very high purity (99.99+) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this co-fired material. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96 polycrystalline alumina (96 Al2O3), where 96 alumina was used as the benchmark. A prototype packaging system based on regular 96 alumina with Au thick-film metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500C. In order to evaluate this new HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96 alumina and a LTCC alumina from room temperature to 550C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96 alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

High temperature↗
DOE OSTI2022

Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices

The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article: PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer; methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask; methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

Dielectric Energy Storage Materials for Space Sensors: Effect of Processing on the Performance

This paper explores the development of innovative materials for the dielectric energy storage for space components. The CaCuN 3 Ti 4 O 12 or CCTO belonging to perovskite family is of interest due to its colossal dielectric constant. It was demonstrated that materials synthesized at low temperature show nonequilibrium state and exhibit differences in the dielectric and resistivity values. The goal is to obtain high dielectric constant along with high resistivity values for achieving enhanced breakdown voltage. By using other members of the perovskite structures, it was demonstrated that similar colossal dielectric constant is observed and is dependent on processing methods. We have used heterovalent and dissimilar sized atom to replace Ca +2 ion. Accordingly, we replaced Ca +2 ion with heavy Ga +3 ion and developed gallium-based material system, Ga 2/3 Cu 3 Ti 4 O 12 . Following successful synthesis, we measured its dielectric constant and resistivity and compared with CCTO material system. Results of five sets of samples showed that lower temperature processing demonstrated mechanism of grain growth, but due to copper flow in high temperature processed samples dielectric constant and resistivity values were different.

Dielectric Energy↗
NASA NTRS2026

High Temperature Dielectric Properties and Differential Scanning Calorimetry of Lunar Simulants

To guide development of microwave process technology that could be used during in situ construction on the Moon, we measured the high-temperature basic dielectric properties (εʹ and εʺ) of 17 lunar simulants and related materials. In order to confidently use these data one needs to understand the data’s strengths and weaknesses. Therefore, a goal of this publication is to provide insights into the comparative effects of sample composition, pre-treatments, experimental variables, high temperatures, and other factors on the measured response. The dielectric measurements were performed using the cavity perturbation method over a temperature range between room temperature to 1000 °C, or higher, and provided the real and imaginary components of permittivity at six frequencies. The utility of the original values was limited by the varying density of the pellets used in the measurement. Therefore, all of the εʹ and εʺ measurements at the frequency of 2466 MHz have been scaled to a constant density, 1.75 g/cm 3 . Here the data are presented as graphs chosen to aid analysis within and across simulant groups. To gain additional insight into the processes happening at the elevated temperatures in the dielectric measurements, heat capacity data was obtained using differential scanning calorimetry (DSC) on several of the simulant materials. Our data show that over the frequency range 397 MHz – 2985 MHz a material’s behavior does not greatly change, as compared to the scale of differences observed between lunar mare and highland simulants at high temperatures. For example at 1000 °C, the mare simulant JSC-1A absorbs 10 times more power than the highland simulant NUW-LHT-5M. We observe that as melting temperatures are reached both permittivity and dielectric loss rise non-linearly, helping to explain thermal runaway during microware heating. Our data show that even less than a few weight % of many non-lunar minerals, and the use of mixtures in simulants can affect the dielectric behavior at higher temperatures. A comparison of our results with published dielectric data for Apollo samples and with remote sensing of the Moon supports the conclusion the simulants and lunar material at room temperature have very similar dielectric values.

Differential Scanning Calorimetry↗
DOE OSTI2025

Breakdown of the Static Dielectric Screening Approximation of Coulomb Interactions in Atomically Thin Semiconductors

Coulomb interactions in atomically thin materials are remarkably sensitive to variations in the dielectric screening of the environment, which can be used to control exotic quantum many-body phases and engineer exciton potential landscapes. For decades, static or frequency-independent approximations of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, have been sufficient. These approximations were first applied to quantum wells and were more recently extended with initial success to layered transition metal dichalcogenides (TMDs). Here, we use charge-tunable exciton resonances to investigate screening effects in TMD monolayers embedded in materials with low-frequency dielectric constants ranging from 4 to more than 1000, a range of 2 orders of magnitude larger than in previous studies. In contrast to the redshift predicted by static models, we observe a blueshift of the exciton resonance exceeding 30 meV in higher dielectric constant environments. We explain our observations by introducing a dynamical screening model based on a solution to the Bethe-Salpeter equation (BSE). When dynamical effects are strong, we find that the exciton binding energy remains mostly controlled by the low-frequency dielectric response, while the exciton self-energy is dominated by the high-frequency one. Our results supplant the understanding of screening in layered materials and their heterostructures, introduce a knob to tune selected many-body effects, and reshape the framework for detecting and controlling correlated quantum many-body states and designing optoelectronic and quantum devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Investigation into the crystal structure–dielectric property correlation in barium titanate nanocrystals of different sizes

For high capacitance multilayer ceramic capacitors, high dielectric constant and lead-free ceramic nanoparticles are highly desired. However, as the particle size decreases to a few tens of nanometers, their dielectric constant significantly decreases, and the underlying mechanism has yet to be fully elucidated. Herein, we report a systematic investigation into the crystal structure–dielectric property relationship of combustion-made BaTiO 3 (BTO) nanocrystals. When the nanocrystal size was 100 nm and below, a metastable paraelectric cubic phase was found in the as-received BTO (denoted as arBTO) nanocrystals based on an X-ray diffraction (XRD) study. A stable ferroelectric tetragonal phase was present when the nanocrystal size was above 200 nm. Notably, the cubic arBTO (particle size ≤100 nm) exhibited tetragonal fluctuations as revealed by Raman spectroscopy, whereas the tetragonal arBTO (particle size ≥200 nm) contained ~10% cubic fraction according to the Rietveld fitting of the XRD profiles. Thermal annealing of the multi-grain tetragonal arBTO at 950 °C yielded single crystals of annealed BTO (denoted as anBTO), whose dielectric constants were higher than those of arBTO. However, the single crystalline anBTO prevented the formation of 90° domains; therefore, they exhibited a low dielectric constant of ~300. Although X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy could not identify the exact structural defects, our study revealed that surface and bulk defects formed during synthesis affect the final crystal structures and thus the dielectric properties of BTO nanocrystals with different sizes. Finally, the understanding obtained from this study will help us design high dielectric constant perovskite nanocrystals for next-generation multilayer ceramic capacitor applications.

36 MATERIALS SCIENCE↗
NASA NTRS1973

The electromagnetic radiation from simple sources in the presence of a homogeneous dielectric sphere

In this research, the effect of a homogeneous dielectric sphere on the electromagnetic radiation from simple sources is treated as a boundary value problem, and the solution is obtained by the technique of dyadic Green's functions. Exact representations of the electric fields in the various regions due to a source located inside, outside, or on the surface of a dielectric sphere are formulated. Particular attention is given to the effect of sphere size, source location, dielectric constant, and dielectric loss on the radiation patterns and directivity of small spheres (less than 5 wavelengths in diameter) using the Huygens' source excitation. The computed results are found to closely agree with those measured for waveguide-excited plexiglas spheres. Radiation patterns for an extended Huygens' source and for curved electric dipoles located on the sphere's surface are also presented. The resonance phenomenon associated with the dielectric sphere is studied in terms of the modal representation of the radiated fields. It is found that when the sphere is excited at certain frequencies, much of the energy is radiated into the sidelobes. The addition of a moderate amount of dielectric loss, however, quickly attenuates this resonance effect. A computer program which may be used to calculate the directivity and radiation pattern of a Huygens' source located inside or on the surface of a lossy dielectric sphere is listed.

Mason, V. B.↗
NASA NTRS1983

Plasma polymerized high energy density dielectric films for capacitors

High energy density polymeric dielectric films were prepared by plasma polymerization of a variety of gaseous monomers. This technique gives thin, reproducible, pinhole free, conformable, adherent, and insoluble coatings and overcomes the processing problems found in the preparation of thin films with bulk polymers. Thus, devices are prepared completely in a vacuum environment. The plasma polymerized films prepared all showed dielectric strengths of greater than 1000 kV/cm and in some cases values of greater than 4000 kV/cm were observed. The dielectric loss of all films was generally less than 1% at frequencies below 10 kHz, but this value increased at higher frequencies. All films were self healing. The dielectric strength was a function of the polymerization technique, whereas the dielectric constant varied with the structure of the starting material. Because of the thin films used (thickness in the submicron range) surface smoothness of the metal electrodes was found to be critical in obtaining high dielectric strengths. High dielectric strength graft copolymers were also prepared. Plasma polymerized ethane was found to be thermally stable up to 150 C in the presence of air and 250 C in the absence of air. No glass transitions were observed for this material.

Yamagishi, F. G.↗
NASA NTRS1987

Microwave dielectric behavior of vegetation material

The microwave dielectric behavior of vegetation was examined through the development of theoretical models involving dielectric dispersion by both bound and free water and supported by extensive dielectric measurements conducted over a wide range of conditions. The experimental data were acquired using an open-ended coaxial probe that was developed for sensing the dielectric constant of thin layers of materials, such as leaves, from measurements of the complex reflection coefficient using a network analyzer. The probe system was successfully used to record the spectral variation of the dielectric constant over a wide frequency range extending from 0.5 to 20.4 GHz at numerous temperatures between -40 to +40 C. The vegetation samples were measured over a wide range of moisture conditions. To model the dielectric spectrum of the bound water component of the water included in vegetation, dielectric measurements were made for several sucrose-water solutions as analogs for the situation in vegetation. The results were used in conjunction with the experimental data for leaves to determine some of the constant coefficients in the theoretical models. Two models, both of which provide good fit to the data, are proposed.

Elrayes, Mohamed A.↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X(0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1990

Dielectric function of InGaAs in the visible

Measurements are reported of the dielectric function of thermodynamically stable In(x)Ga(1-x)As in the composition range 0.3 equal to or less than X = to or less than 0.7. The optically thick samples of InGaAs were made by molecular beam epitaxy (MBE) in the range 0.4 = to or less than X = to or less than 0.7 and by metal-organic chemical vapor deposition (MOCVD) for X = 0.3. The MBE made samples, usually 1 micron thick, were grown on semi-insulating InP and included a strain release structure. The MOCVD sample was grown on GaAs and was 2 microns thick. The dielectric functions were measured by variable angle spectroscopic ellipsometry in the range 1.55 to 4.4 eV. The data was analyzed assuming an optically thick InGaAs material with an oxide layer on top. The thickness of this layer was estimated by comparing the results for the InP lattice matched material, i.e., X = 0.53, with results published in the literature. The top oxide layer mathematically for X = 0.3 and X = 0.53 was removed to get the dielectric function of the bare InGaAs. In addition, the dielectric function of GaAs in vacuum, after a protective arsenic layer was removed. The dielectric functions for X = 0, 0.3, and 0.53 together with the X = 1 result from the literature to evaluate an algorithm for calculating the dielectric function of InGaAs for an arbitrary value of X (0 = to or less than X = to or less than 1) were used. Results of the dielectric function calculated using the algorithm were compared with experimental data.

Alterovitz, S. A.↗
NASA NTRS1992

Analysis of the dielectric properties of trunk wood in dominant conifer species from New England and Siberia

Data were collected for dominant conifer species. Dielectric properties of trunk wood were measured using a C-band dielectric probe. For certain specimens, electrical resistance was also measured using a shigometer. The water status of the trees studies was determined either by use of a Scholander pressure chamber on branch samples collected simultaneously with dielectric measurements or by fresh-weight/dry-weight assessment of wood core samples extracted and analyzed with the dielectric probe and shigometer. Diurnal delectric properties and xylem water column tension are inversely correlated such that real and imaginary dielectric values drop as tension increases. The dielectric properties were positively correlated with wood core moisture content while electrical resistance was poorly correlated with wood core moisture content in one species studied. Results support the view that dielectric properties are strongly correlated with moisture status in trunk wood, and possibly ion concentrations associated with decay processes in damaged specimens.

Ranson, K. J.↗