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All sourcesNASA NTRSDOE OSTI
NASA NTRS1992

Role of dielectric constant in electrohydrodynamics of conducting fluids

Electrohydrodynamic (EHD) flows are driven by the interaction of an electric field with variations in electric conductivity or dielectric constant. In reported EHD experiments on the deformation of drops of immiscible dielectric fluids, the role of conductivity has tended to overshadow the role of dielectric constant. Often, large conductivity contrasts were convenient because the conductivities of the dielectric fluid were relatively uncertain. As a result, the observed effects were always qualitatively the same as if there had been no contrast in dielectric constant. Our early experiments studying the EHC deformations of cylindrical streams readily showed the conductivity effect but the dielectric constant effect was not discernible. We have modified our flow chamber and improved our method of observation and can now see an unequivocal dielectric constant effect which is in agreement with the prior theory. In this paper we first give a brief description of the physics of charge buildup at the interface of an immersed spherical drop or flowing cylindrical sample stream and then show how these charge distributions lead to interface distortions and accompanying viscous flows which constitute EHD. We next review theory and experiment describing the deformation of spherical drops. We show that in the reported drop deformation experiments, the contrast in dielectric constant was never sufficient to reverse the deformation due to the conductivity contrast. We review our work describing the deformation of a cylindrical stream of one fluid flowing in a parallel flow of another, and we compare the deformation equations with those for spherical drops. Finally, we show a definite experimental dielectric constant effect for cylindrical stream of aqueous polystyrene latex suspension. The dielectric constant varies with the frequency of the imposed electric field, and the associated EHD flow change is very apparent.

Rhodes, Percy H.↗
DOE OSTI2023

Dielectrics Under Extreme Electric Fields: In Situ Studies on Nanoscale Mechanisms (Final Technical Report)

The lack of materials that can function reliably under extreme electric fields is a critical roadblock to achieving higher energy efficiency and extended service lifetime of devices in electricity generation, transmission, and consumption. Materials typically fail at two or three orders of magnitude below their theoretical dielectric breakdown strength. Identifying the origins of premature dielectric breakdown using state-of-the-art characterization tools will, therefore, enable the design and discovery of transformational materials capable of approaching their intrinsic limits. The vast improvement in the resolution power of imaging tools, combined with the recently developed in situ electric biasing technique, has made high resolution observations of dielectric breakdown as it happens possible. The overall goal of the project is to directly image the dynamic processes of defect formation, accumulation, and interaction with preexisting defects (e.g., dislocations, domain walls, and grain boundaries in crystalline dielectric films) under electric fields up to 1,000 MV/m with a temporal resolution better than 5 microseconds. Using the newly acquired, custom-made Hysitron PI95 transmission electron microscopy (TEM) specimen holder, in situ TEM observations of breakdown at the sub nanometer resolution will be made on representative dielectric compounds with progressive complexities: the linear dielectric SiO 2 , CuO, and TiO 2 , the ferroelectric BaTiO 3 nanocrystals and nanocubes. Through direct observation of the breakdown event at high spatial and temporal resolutions, the nanoscale mechanisms for the failure of dielectrics under intense electric fields will be identified. The results of the project will be applied to the design and processing of new dielectric materials with higher efficiency, improved reliability, and a prolonged lifetime. Such new dielectrics are urgently needed for modernizing energy infrastructures.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Effect of dielectric target properties on plasma surface ionization wave propagation

Surface ionization waves (SIWs) propagating along dielectric covered, grounded surfaces have been studied for various dielectric bulk and surface conditions; a dependence on the propagation velocity with respect to dielectric electrical thickness and near surface permittivity profiles are observed. SIWs generated by an atmospheric pressure plasma source are imaged interacting with planar dielectric surface. Surface wave velocity is obtained by tracking emission intensity as a function of time. Target dielectric thickness is varied from $d = 0.15-10$ mm and dielectric constant is varied from $\epsilon_r = 6.21 - 9.4$. The propagation of SIWs can be generally predicted by relating their velocity to the RC time constant of the circuit generated between the plasma and the dielectric surface, but it is found that this approximation breaks down for dielectric substrates of sufficient thickness and wave velocity becomes constant. The results show that wave velocity is stable and predictable for target thicknesses beyond a certain point determined by the permittivity of the target material. It is also shown that SIW propagation is strongly driven by the dielectric material near to the surface of the target in addition to the bulk material. The possible mechanisms driving these thickness dependent behaviors is discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Enhancing the dielectric constant of zwitterionic liquids via dipole moment and anion chemistry

The dielectric constant is a critical parameter in many energy-related applications. Typically, increasing the dielectric constant of soft materials involves adding high dielectric constant polar liquids or inorganic fillers, but there are limitations to this approach due to safety concerns with volatile and flammable solvents and the agglomeration of inorganic fillers. An alternative approach is to add zwitterionic liquids that exhibit exceptionally high dielectric constants with negligible volatility. Here, we report the synthesis of a series of zwitterionic liquids containing an imidazolium cation, exhibiting the highest dielectric constant among all organic molecules (∼350 at 293 K). The cation–anion linkage was tailored in a wide range between three and nine carbons, rendering the zwitterion dipole from 25 to 52 D. Comparing the dielectric constant for zwitterions with different anions (i.e., sulfonylimide, sulfonate, and carboxylate) reveals the beneficial impacts of the delocalized sulfonylimide anion vs the carboxylate anion due to the enlarged molecular dipole and more homogenous liquid morphology. Molecular dipole and liquid morphology are identified as the keys to developing high dielectric constant zwitterionic liquids. The extremely high dielectric constant accessible with the proposed molecular design paves new avenues for developing high dielectric constant zwitterions that act as dielectricizers.

Chemistry↗
NASA NTRS2005

Nanoactuators Based on Electrostatic Forces on Dielectrics

Nanoactuators of a proposed type would exploit the forces exerted by electric fields on dielectric materials. As used here, "nanoactuators" includes motors, manipulators, and other active mechanisms that have dimensions of the order of nanometers and/or are designed to manipulate objects that have dimensions of the order of nanometers. The underlying physical principle can be described most simply in terms of the example of a square parallel-plate capacitor in which a square dielectric plate is inserted part way into the gap between the electrode plates (see Figure Typically, the force is small from our macroscopic human perspective. The above equation shows that the force depends on the ratio between the capacitor dimensions but does not depend on the size. In other words, the force remains the same if the capacitor and the dielectric slab are shrunk to nanometer dimensions. At the same time, the masses of all components are proportional to third power of their linear dimensions. Therefore the force-to-mass ratio (and, consequently, the acceleration that can be imparted to the dielectric slab) is much larger at the nanoscale than at the macroscopic scale. The proposed actuators would exploit this effect. The upper part of Figure 2 depicts a simple linear actuator based on a parallel- plate capacitor similar to Figure 1. In this case, the upper electrode plate would be split into two parts (A and B) and the dielectric slab would be slightly longer than plate A or B. The actuator would be operated in a cycle. During the first half cycle, plate B would be grounded to the lower plate and plate A would be charged to a potential, V, with respect to the lower plate, causing the dielectric slab to be pulled under plate A. During the second half cycle, plate A would be grounded and plate B would be charged to potential V, causing the dielectric slab to be pulled under plate B. The back-and-forth motion caused by alternation of the voltages on plates A and B could be used to drive a nanopump, for example. A rotary motor, shown in the middle part of Figure 2, could include a dielectric rotor sandwiched between a top and a bottom plate containing multiple electrodes arranged symmetrically in a circle. Voltages would be applied sequentially to electrode pairs 1 and 1a, then 2 and 2a, then 3 and 3a in order to attract the dielectric rotor to sequential positions between the electrode pairs.

Wang, Yu↗
DOE OSTI2021

Mechanical and Dielectric Properties of Aligned Electrospun Fibers

This review paper examines the current state-of-the-art in fabrication of aligned fibers via electrospinning techniques and the effects of these techniques on the mechanical and dielectric properties of electrospun fibers. Molecular orientation, system configuration to align fibers, and post-drawing treatment, like hot/cold drawing process, contribute to better specific strength and specific stiffness properties of nanofibers. The authors suggest that these improved, aligned nanofibers, when applied in composites, have better mechanical and dielectric properties for many structural and multifunctional applications, including advanced aerospace applications and energy storage devices. For these applications, most fiber alignment electrospinning research has focused on either mechanical property improvement or dielectric property improvement alone, but not both simultaneously. Relative to many other nanofiber formation techniques, the electrospinning technique exhibits superior nanofiber formation when considering cost and manufacturing complexity for many situations. Even though the dielectric property of pure nanofiber mat may not be of general interest, the analysis of the combined effect of mechanical and dielectric properties is relevant to the present analysis of improved and aligned nanofibers. A plethora of nanofibers, in particular, polyacrylonitrile (PAN) electrospun nanofibers, are discussed for their mechanical and dielectric properties. In addition, other types of electrospun nanofibers are explored for their mechanical and dielectric properties. An exploratory study by the author demonstrates the relationship between mechanical and dielectric properties for specimens obtained from a rotating mandrel horizontal setup.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS2023

A Performance Analysis on Soil Dielectric Models Over Organic Soils in Alaska for Passive Microwave Remote Sensing of Soil Moisture

Passive microwave remote sensing of soil moisture (SM) requires a physically based dielectric model that quantitatively converts the volumetric SM into the soil bulk dielectric constant. Mironov 2009 is the dielectric model used in the operational SM retrieval algorithms of the NASA Soil Moisture Active Passive (SMAP) and the ESA Soil Moisture and Ocean Salinity (SMOS) missions. However, Mironov 2009 suffers a challenge in deriving SM over organic soils, as it does not account for the impact of soil organic matter (SOM) on the soil bulk dielectric constant. To this end, we presented a comparative performance analysis of nine advanced soil dielectric models over organic soil in Alaska, four of which incorporate SOM. In the framework of the SMAP single-channel algorithm at vertical polarization (SCA-V), SM retrievals from different dielectric models were derived using an iterative optimization scheme. The skills of the different dielectric models over organic soils were reflected by the performance of their respective SM retrievals, which was measured by four conventional statistical metrics, calculated by comparing satellite-based SM time series with in-situ benchmarks. Overall, SM retrievals of organic-soil-based dielectric models tended to overestimate, while those from mineral-soil-based models displayed dry biases. All the models showed comparable values of unbiased root-mean-square error (ubRMSE) and Pearson Correlation (R), but Mironov 2019 exhibited a slight but consistent edge over the others. An integrated consideration of the model inputs, the physical basis, and the validated accuracy indicated that the separate use of Mironov 2009 and Mironov 2019 in the SMAP SCA-V for mineral soils (SOM < 15%) and organic soils (SOM ≥ 15%) would be the preferred option.

Soil Moisture↗
DOE OSTI2024

Lateral Beam Shifts and Depolarization Upon Oblique Reflection from Dielectric Mirrors

Abstract Dielectric mirrors comprising thin‐film multilayers are widely used in optical experiments because they can achieve substantially higher reflectance compared to metal mirrors. Here, potential problems are investigated that can arise when dielectric mirrors are used at oblique incidence, in particular for focused beams. It is found that light beams reflected from dielectric mirrors can experience lateral beam shifts, beam‐shape distortion, and depolarization, and these effects have a strong dependence on wavelength, incident angle, and incident polarization. Because vendors of dielectric mirrors typically do not share the particular layer structure of their products, several dielectric‐mirror stacks are designed and simulated, and then the lateral beam shift from two commercial dielectric mirrors and one coated metal mirror is also measured. This paper brings awareness of the tradeoffs between dielectric mirrors and front‐surface metal mirrors in certain optics experiments, and it is suggested that vendors of dielectric mirrors provide information about beam shifts, distortion, and depolarization when their products are used at oblique incidence.

Physics↗
DOE OSTI2023

Polarization consistent dielectric screening in polarizable continuum model calculations of solvation energies

A polarization consistent framework, where dielectric screening is affected consistently in polarizable continuum model (PCM) calculations, is employed for the study of solvation energies. The computational framework combines a screened range-separated-hybrid functional (SRSH) with PCM calculations, SRSH-PCM, where dielectric screening is imposed in both PCM self-consistent reaction field (SCRF) iterations and the electronic structure Hamiltonian. We begin by demonstrating the impact of modifying the Hamiltonian to include such dielectric screening in SCRF iterations by considering the solutions of electrostatically embedded Hartree–Fock (HF) exact exchange equations. Long-range screened HF-PCM calculations are shown to capture properly the linear dependence of gap energy of frontier orbitals on the inverse of the dielectric constant, whereas unscreened HF-PCM orbital energies are fallaciously semi-constant with respect to the dielectric constant and, therefore, inconsistent with the ionization energy gaps. Similar trends affect density functional theory (DFT) calculations that aim to achieve predictive quality. Importantly, the dielectric screened calculations are shown to significantly affect DFT- and HF PCM-based solvation energies, where screened solvation energies are smaller compared to the unscreened values. Importantly, SRSH-PCM, therefore, appears to reduce the tendency of DFT-PCM to overestimate solvation energies, where we find the effect to increase with the dielectric constant and the polarity of the molecular solute, trends that enhance the quality of DFT-PCM calculations of solvation energy. Understanding the relationship of dielectric screening in the Hamiltonian and DFT-PCM calculations can ultimately benefit on-going efforts for the design of predictive and parameter free descriptions of solvation energies.

Chemistry↗
NASA NTRS1980

An empirical model for the complex dielectric permittivity of soils as a function of water content

Recent measurements on the dielectric properties of soils have shown that the variation of dielectric constant with moisture content depends on soil types. The observed dielectric constant increases only slowly with moisture content up to a transition point. Beyond the transition it increases rapidly with moisture content. The moisture value at transition region was found to be higher for high clay content soils than for sandy soils. Many mixing formulas reported in the literature were compared with, and were found incompatible with, the measured dielectric variations of soil-water mixtures. A simple empirical model was proposed to describe the dielectric behavior of the soil-water mixtures. This model employs the mixing of either the dielectric constants or the refraction indices of ice, water, rock, and air, and treats the transition moisture value as an adjustable parameter. The calculated mixture dielectric constants from the model were found to be in reasonable agreement with the measured results over the entire moisture range of 0-0.5 cu cm/cu cm. The transition moistures derived from the model range from 0.16 to 0.33 and are strongly correlated with the wilting points of the soils estimated from their textures. This relationship between transition moisture and wilting point provides a means of estimating soil dielectric properties on the basis of texture information.

Wang, J. R.↗
NASA NTRS1991

Diurnal changes in the dielectric properties and water status of eastern hemlock and red spruce from Howland, ME

The diurnal characteristics of microwave dielectric properties and water potential of two conifer species were investigated in July and September, 1990. P-band and C-band radial dielectric profiles of hemlock and red spruce, as well as hemlock diurnal water potential and dielectric profiles, are presented. The resulting radial dielectric profiles matched the regions of the functional sapwood (water transport component of the active xylem) in both species such that the sapwood was characterized by a higher dielectric than the bark and heartwood tissues. This is probably due to characteristic differences in the water content of each tissue. As the hemlocks progressed through their diurnal water potential pattern, the dielectric profile remained static until mid-afternoon. As the tension in the water column relaxed (2 to 3 bars) the dielectric constant decreased by 30 to 40 percent. There are several possible explanations for this phenomenon, and these may relate to the dependency of the dielectric measurements on temperature, salinity, and volumetric water content.

Salas, W. A.↗
NASA NTRS2014

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Electronic packaging↗
NASA NTRS2012

Dielectric Performance of High Purity HTCC Alumina at High Temperatures - A Comparison Study with Other Polycrystalline Alumina

A very high purity (99.99+) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this co-fired material. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96 polycrystalline alumina (96 Al2O3), where 96 alumina was used as the benchmark. A prototype packaging system based on regular 96 alumina with Au thick-film metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500C. In order to evaluate this new HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96 alumina and a LTCC alumina from room temperature to 550C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96 alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

High temperature↗
DOE OSTI2021

Ag-doped As–S–Se chalcogenide glasses: a correlative study of structural and dielectrical properties

This work is focused on investigating the effect of Ag doping on the dielectric and structural properties of the As–S–Se glass system and their suitability for potential applications in optoelectronics, such as electronic and switching components. A series of glasses from the system Agx(As40S30Se30)100-x (x = 5 at.% Ag) were prepared with melt-quenching technique. Morphological and compositional analysis was performed by scanning electron microscopy and energy-dispersive X-ray spectroscopy. Raman spectroscopy measurements have shown structural modifications of the glass network upon Ag doping, with creation of new Ag–(S,Se)–As structures, resulting in increased number of defect states. Variations in dielectric permittivity (e') and dielectric loss (e") were investigated in a wide frequency and temperature range, and explained by dominant dipolar and electronic polarization, as well as correlated with the observed structural changes. Improvement in dielectric properties is observed upon doping with Ag. Furthermore, the low dielectric tangent loss at high frequencies for all glassy samples points to a beneficial ability of the material to absorb energy of the external electric field. Good thermal stability of these glasses is confirmed by the calculated temperature coefficient of the dielectric permittivity. Density of localized states in all glasses was determined from AC conductivity and the dielectric tangent loss using a correlated barrier hopping model, and found to increase with Ag concentration. The overall results suggest that Ag doping enhances the electrical and optical quality of this type of glasses, making them suitable as nonlinear optical materials and their applications in devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Fabrication methods for high reflectance dielectric-metal point contact rear mirror for optoelectronic devices

The patterned dielectric back contact (PDBC) structure can be used to form a point-contact architecture that features a dielectric spacer with spatially distributed, reduced-area metal point contacts between the semiconductor back not recognized contact layer and the metal back contact. In this structure, the dielectric-metal region provides higher reflectance and is electrically insulating. Reduced-area metal point contacts provide electrical conduction for the back contact but typically have lower reflectance. The fabrication methods discussed in this article were developed for thermophotovoltaic cells, but they apply to any III-V optoelectronic device requiring the use of a conductive and highly reflective back contact. Patterned dielectric back contacts may be used for enhanced sub-bandgap reflectance, for enhanced photon recycling near the bandgap energy, or both depending on the optoelectronic application. The following fabrication methods are discussed in the article: PDBC fabrication procedures for spin-on dielectrics and commonly evaporated dielectrics to form the spacer layer; methods to selectively etch a parasitically absorbing back contact layer using metal point contacts as an etch mask; methods incorporating a dielectric etch through different process techniques such as reactive ion and wet etching.

14 SOLAR ENERGY↗
NASA NTRSDate not supplied

Dielectric Energy Storage Materials for Space Sensors: Effect of Processing on the Performance

This paper explores the development of innovative materials for the dielectric energy storage for space components. The CaCuN 3 Ti 4 O 12 or CCTO belonging to perovskite family is of interest due to its colossal dielectric constant. It was demonstrated that materials synthesized at low temperature show nonequilibrium state and exhibit differences in the dielectric and resistivity values. The goal is to obtain high dielectric constant along with high resistivity values for achieving enhanced breakdown voltage. By using other members of the perovskite structures, it was demonstrated that similar colossal dielectric constant is observed and is dependent on processing methods. We have used heterovalent and dissimilar sized atom to replace Ca +2 ion. Accordingly, we replaced Ca +2 ion with heavy Ga +3 ion and developed gallium-based material system, Ga 2/3 Cu 3 Ti 4 O 12 . Following successful synthesis, we measured its dielectric constant and resistivity and compared with CCTO material system. Results of five sets of samples showed that lower temperature processing demonstrated mechanism of grain growth, but due to copper flow in high temperature processed samples dielectric constant and resistivity values were different.

Dielectric Energy↗
NASA NTRS2026

High Temperature Dielectric Properties and Differential Scanning Calorimetry of Lunar Simulants

To guide development of microwave process technology that could be used during in situ construction on the Moon, we measured the high-temperature basic dielectric properties (εʹ and εʺ) of 17 lunar simulants and related materials. In order to confidently use these data one needs to understand the data’s strengths and weaknesses. Therefore, a goal of this publication is to provide insights into the comparative effects of sample composition, pre-treatments, experimental variables, high temperatures, and other factors on the measured response. The dielectric measurements were performed using the cavity perturbation method over a temperature range between room temperature to 1000 °C, or higher, and provided the real and imaginary components of permittivity at six frequencies. The utility of the original values was limited by the varying density of the pellets used in the measurement. Therefore, all of the εʹ and εʺ measurements at the frequency of 2466 MHz have been scaled to a constant density, 1.75 g/cm 3 . Here the data are presented as graphs chosen to aid analysis within and across simulant groups. To gain additional insight into the processes happening at the elevated temperatures in the dielectric measurements, heat capacity data was obtained using differential scanning calorimetry (DSC) on several of the simulant materials. Our data show that over the frequency range 397 MHz – 2985 MHz a material’s behavior does not greatly change, as compared to the scale of differences observed between lunar mare and highland simulants at high temperatures. For example at 1000 °C, the mare simulant JSC-1A absorbs 10 times more power than the highland simulant NUW-LHT-5M. We observe that as melting temperatures are reached both permittivity and dielectric loss rise non-linearly, helping to explain thermal runaway during microware heating. Our data show that even less than a few weight % of many non-lunar minerals, and the use of mixtures in simulants can affect the dielectric behavior at higher temperatures. A comparison of our results with published dielectric data for Apollo samples and with remote sensing of the Moon supports the conclusion the simulants and lunar material at room temperature have very similar dielectric values.

Differential Scanning Calorimetry↗
DOE OSTI2025

Breakdown of the Static Dielectric Screening Approximation of Coulomb Interactions in Atomically Thin Semiconductors

Coulomb interactions in atomically thin materials are remarkably sensitive to variations in the dielectric screening of the environment, which can be used to control exotic quantum many-body phases and engineer exciton potential landscapes. For decades, static or frequency-independent approximations of the dielectric response, where increased dielectric screening is predicted to cause an energy redshift of the exciton resonance, have been sufficient. These approximations were first applied to quantum wells and were more recently extended with initial success to layered transition metal dichalcogenides (TMDs). Here, we use charge-tunable exciton resonances to investigate screening effects in TMD monolayers embedded in materials with low-frequency dielectric constants ranging from 4 to more than 1000, a range of 2 orders of magnitude larger than in previous studies. In contrast to the redshift predicted by static models, we observe a blueshift of the exciton resonance exceeding 30 meV in higher dielectric constant environments. We explain our observations by introducing a dynamical screening model based on a solution to the Bethe-Salpeter equation (BSE). When dynamical effects are strong, we find that the exciton binding energy remains mostly controlled by the low-frequency dielectric response, while the exciton self-energy is dominated by the high-frequency one. Our results supplant the understanding of screening in layered materials and their heterostructures, introduce a knob to tune selected many-body effects, and reshape the framework for detecting and controlling correlated quantum many-body states and designing optoelectronic and quantum devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗