Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “device failure mechanism”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Fabrication of Lanthanum Telluride 14-1-11 Zintl High-Temperature Thermoelectric Couple

The development of more efficient thermoelectric couple technology capable of operating with high-grade heat sources up to 1,275 K is key to improving the performance of radioisotope thermoelectric generators. Lanthanum telluride La3-xTe4 and 14-1-11 Zintls (Yb14MnSb11) have been identified as very promising materials. The fabrication of advanced high-temperature thermoelectric couples requires the joining of several dissimilar materials, typically including a number of diffusion bonding and brazing steps, to achieve a device capable of operating at elevated temperatures across a large temperature differential (up to 900 K). A thermoelectric couple typically comprises a heat collector/ exchanger, metallic interconnects on both hot and cold sides, n-type and ptype conductivity thermoelectric elements, and cold-side hardware to connect to the cold-side heat rejection and provide electrical connections. Differences in the physical, mechanical, and chemical properties of the materials that make up the thermoelectric couple, especially differences in the coefficients of thermal expansion (CTE), result in undesirable interfacial stresses that can lead to mechanical failure of the device. The problem is further complicated by the fact that the thermoelectric materials under consideration have large CTE values, are brittle, and cracks can propagate through them with minimal resistance. The inherent challenge of bonding brittle, high-thermal-expansion thermoelectric materials to a hot shoe material that is thick enough to carry the requisite electrical current was overcome. A critical advantage over prior art is that this device was constructed using all diffusion bonds and a minimum number of assembly steps. The fabrication process and the materials used are described in the following steps: (1) Applying a thin refractory metal foil to both sides of lanthanum telluride. To fabricate the n-type leg of the advanced thermoelectric couple, the pre-synthesized lanthanum telluride coupon was diffusion bonded to the metal foil using a thin adhesion layer. (2) Repeating a similar process for the 14-1-11 Zintl p-type leg of the advanced thermoelectric couple. (3) Bonding thick CTE-matched metal plates on the metallized lanthanum telluride and Yb14MnSb11 to form the hot and cold sides of the thermoelectric couple. The calculated conversion efficiency of such an advanced couple would be about 10.5 percent, about 35 percent better than heritage radioisotope thermoelectric technology that relies on Si-Ge alloys. In addition, unlike Si-Ge alloys, these materials can be combined with many other thermoelectric materials optimized for operation at lower temperatures to achieve conversion efficiency in excess of 15 percent (a factor of 2 increase over heritage technology).

Ravi, Vilupanur A.↗
NASA NTRS1987

A study of charged particles/radiation damage to VLSI device materials

Future spacecraft systems such as the manned space station will be subjected to low-dose long term radiation particles. Most electronic systems are affected by such particles. There is therefore a great need to understand device physics and failure mechanisms affected by radiation and to design circuits that would be less susceptible to radiation. Using 2 MeV electron radiation and bias temperature aging, it was found that MOS capacitors that were prepositively biased have lower flatband voltage shift and lesser increase in density of surface state charge than those that were not prepositively biased. In addition, it was shown that there is continued recovery of flatband voltage and density of state charge in irradiated capacitors during both room temperature anneal and 137 degree anneal. When nMOS transistors were subjected to 1 MeV proton radiation, charge pumping and current versus voltage measurements indicated that transconductance degradation, threshold voltage shifts and changes in interface states density may be the primary cause of nMOS transistor failure after radiation. Simulation studies using SPICE were performed on CMOS SRAM cells of various transistor sizes. It is shown that transistor sizing affects the noise margins of CMOS SRAM cells, and that as the beta ratio of the transistors of the CMOS SRAM cell decreases, the effective noise margin of the SRAM cell increases. Some suggestions were made in connection with the design of CMOS SRAMS that are hardened against single event upsets.

Okyere, John G.↗
NASA NTRS2008

Microelectronics reliability : physics-of-failure based modeling and lifetime evaluation

This handbook presents a physics-of-failure approach to microelectronics reliability modeling and assessment. Knowledge of the root cause and physical behavior of key failure mechanisms in microelectronic devices has improved dramatically over recent years and has led to the development of more sophisticated reliability modeling tools and techniques...

White, Mark↗
NASA NTRS2000

Compound Semiconductor Devices for Space Applications

Application of semiconductor devices in high reliability space systems requires a thorough understanding of the reliability and failure mechanisms associated with the selected devices. This paper provides a description of the reliability and qualification issues related to the application of compound semiconductor devices in critical space systems. A discussion of common failure mechanisms, radiation effects and other reliability concerns is provided along with a discussion of methods for technology qualification for high reliability space applications.

Kayali, Sammy↗
NASA NTRS2017

Applications of Fracture Mechanics to Quantitative Accelerated Life Testing of Plastic Encapsulated Microelectronics

Accelerated testing must address the failure mechanisms active within the devices undergoing tests in order to assess lifetimes in a meaningful way. The assumption of constant temperature, thermally activated lifetime, based upon the Arrhenius assumptions, does not always provide the necessary understanding to interpret accelerated tests in microelectronics. Plastic encapsulants, dielectric polymers, and underfill materials are subject to delamination and cracking with thermal cycling. Crack propagation during use environment exposure, drives the potential for failure of microelectronic devices and is therefore a necessary focal point in qualification and life testing. This paper reviews the available research in the application of fracture mechanics to this class of problems in microelectronics including relevant test data. In addition, useful acceleration factor models are derived for polymer crack propagation based on principles of linear elastic fracture mechanics. Further, a simple approach to estimating the minimum temperature cycling ranges, necessary to propagate a crack, is also presented. Finally, a methodology of applying acceleration factors to develop testing plans is shown, with an example in spaceflight for a cubesat in low Earth orbit. Overall, this is a paper that shows a useful and appropriate process for creating physics of failure based life testing for delamination and cracking failures in microelectronic polymers in a temperature cycling environment.

Accelerated testing↗
DOE OSTI2022

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗
NASA NTRS2010

Accelerated Aging System for Prognostics of Power Semiconductor Devices

Prognostics is an engineering discipline that focuses on estimation of the health state of a component and the prediction of its remaining useful life (RUL) before failure. Health state estimation is based on actual conditions and it is fundamental for the prediction of RUL under anticipated future usage. Failure of electronic devices is of great concern as future aircraft will see an increase of electronics to drive and control safety-critical equipment throughout the aircraft. Therefore, development of prognostics solutions for electronics is of key importance. This paper presents an accelerated aging system for gate-controlled power transistors. This system allows for the understanding of the effects of failure mechanisms, and the identification of leading indicators of failure which are essential in the development of physics-based degradation models and RUL prediction. In particular, this system isolates electrical overstress from thermal overstress. Also, this system allows for a precise control of internal temperatures, enabling the exploration of intrinsic failure mechanisms not related to the device packaging. By controlling the temperature within safe operation levels of the device, accelerated aging is induced by electrical overstress only, avoiding the generation of thermal cycles. The temperature is controlled by active thermal-electric units. Several electrical and thermal signals are measured in-situ and recorded for further analysis in the identification of leading indicators of failures. This system, therefore, provides a unique capability in the exploration of different failure mechanisms and the identification of precursors of failure that can be used to provide a health management solution for electronic devices.

Celaya, Jose R.↗
NASA NTRS2018

Update - Body of Knowledge (BOK) for Copper Wire Bonds

Copper wire bond technology developments continue to be a subject of technical interest to the NASA (National Aeronautics and Space Administration) NEPP (NASA Electronic Parts and Packaging Program) which funded this update. Based on this new research, additional copper bond wire vulnerabilities were found in the literature - Crevice corrosion, intrinsic degradation of palladium coated copper wire, congregation of palladium near ball bond interface leading to failure, residual aluminum pad metallization impact on device lifetimes, stitch cracking phenomena, package delamination's that have resulted in wire bond failures and device failure due to elemental sulfur. A search of the U.S.A. patent web site found 3 noteworthy patents on the following developments: claim of a certain IMC (Intermetallic Compound) thickness as a mitigation solution to chlorine corrosion; claim of using materials with different pHs to neutralize contaminants in a package containing copper wire bonds; and a discussion on ball shear test threshold values for different applications. In addition, an aerospace contractor of military hardware had a presentation on copper bond wires where it was reported that there was a parametric shift and noise susceptibility of devices with copper bond wires which affected legacy design performance. A review of silver bond wire (another emerging technology) technical papers found that an electromigration failure mechanism was evident in device applications that operate under high current conditions. More studies may need to be performed on a comprehensive basis. Research areas for consideration are suggested, however, these research and or qualification/standard test areas are not all inclusive and should not be construed as the element (s) that delivers any potential copper wire bond solution. A false sense of security may occur, whenever there is a reliance on passing any particular qualification, standard, or test protocol.

Rutkowski, E.↗
NASA NTRS2003

Effects Of Environmental And Operational Stresses On RF MEMS Switch Technologies For Space Applications

Micro Electro Mechanical Systems (MEMS) have been heralded for their ability to provide tremendous advantages in electronic systems through increased electrical performance, reduced power consumption, and higher levels of device integration with a reduction of board real estate. RF MEMS switch technology offers advantages such as low insertion loss (0.1- 0.5 dB), wide bandwidth (1 GHz-100 GHz), and compatibility with many different process technologies (quartz, high resistivity Si, GaAs) which can replace the use of traditional electronic switches, such as GaAs FETS and PIN Diodes, in microwave systems for low signal power (x < 500 mW) applications. Although the electrical characteristics of RF MEMS switches far surpass any existing technologies, the unknown reliability, due to the lack of information concerning failure modes and mechanisms inherent to MEMS devices, create an obstacle to insertion of MEMS technology into high reliability applications. All MEMS devices are sensitive to moisture and contaminants, issues easily resolved by hermetic or near-hermetic packaging. Two well-known failure modes of RF MEMS switches are charging in the dielectric layer of capacitive membrane switches and contact interface stiction of metal-metal switches. Determining the integrity of MEMS devices when subjected to the shock, vibration, temperature extremes, and radiation of the space environment is necessary to facilitate integration into space systems. This paper will explore the effects of different environmental stresses, operational life cycling, temperature, mechanical shock, and vibration on the first commercially available RF MEMS switches to identify relevant failure modes and mechanisms inherent to these device and packaging schemes for space applications. This paper will also describe RF MEMS Switch technology under development at NASA GSFC.

Jah, Muzar↗
DOE OSTI2022

Automating Component-Level Stress Measurements for Inverter Reliability Estimation

In the near future, grid operators are expected to regularly use advanced distributed energy resource (DER) functions, defined in IEEE 1547-2018, to perform a range of grid-support operations. Many of these functions adjust the active and reactive power of the device through commanded or autonomous operating modes which induce new stresses on the power electronics components. In this work, an experimental and theoretical framework is introduced which couples laboratory-measured component stress with advanced inverter functionality and derives a reduction in useful lifetime based on an applicable reliability model. Multiple DER devices were instrumented to calculate the additional component stress under multiple reactive power setpoints to estimate associated DER lifetime reductions. A clear increase in switch loss was demonstrated as a function of irradiance level and power factor. This is replicated in the system-level efficiency measurements, although magnitudes were different—suggesting other loss mechanisms exist. Using an approximate Arrhenius thermal model for the switches, the experimental data indicate a lifetime reduction of 1.5% when operating the inverter at 0.85 PF—compared to unity PF—assuming the DER failure mechanism thermally driven within the H-bridge. If other failure mechanisms are discovered for a set of power electronics devices, this testing and calculation framework can easily be tailored to those failure mechanisms.

Flicker, Jack (ORCID:0000000212232154)↗
NASA NTRS1980

JANTX1N2989B zener diode

Report evaluates effects of power and temperature overstress on General Semiconductor and Siemens devices. Mechanical disruption is prominent failure mode. Other failures are described.

Source record↗
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗
NASA NTRSDate not supplied

Learning From Failure: Boosting Cycling Endurance of Optical Phase Change Materials

Chalcogenide phase change materials (PCMs) are a unique class of compounds whose switchable optical and electronic properties have fueled an explosion of emerging applications in microelectronics and microphotonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of microelectronic memories, current PCM-based optical devices suffer from much inferior endurance. To understand the failure mechanisms limiting endurance of PCMs specifically in microphotonic devices, we have developed an on-chip resistive micro-heater platform and an automatic multi-modal characterization system to analyze cycling performance of optical PCMs. Reversible switching of large-area PCM devices over 50,000 cycles was demonstrated.

Optical phase change material↗
NASA NTRSDate not supplied

The PCM is Dead! Long Live O-PCM!

The ability to reconfigure the optical behavior of a device enables free-space applications ranging from imaging to sensing and signal control. Such optical devices can be compacted via meta-surfaces, patterned structures with feature sizes below the incident wavelength. Leveraging geometry in addition to material properties and CMOS fabrication techniques has allowed meta-surfaces for lenses, holograms, beam steerers and more. To incorporate multiple optical functions into one device, various methods of device control have been implemented, such as stretching of flexible substrates, tuning the refractive index of the comprising meta-atoms via the electro-optic or the thermo-optic effects, phase transition materials such as VO2 and more. Chalcogenide glasses used as optical phase change materials, such as Ge¬2Sb2Te5 (GST), have gained increased traction in the optics community for potential use in the near infrared (NIR) and mid infrared (MIR) bands, including the telecom bands. Various chalcogenides such as Sb2Se3, Sb2S3, Ge2Sb¬2Se5 and Ge2Sb2Se4Te (GSST) have been investigated due to their broad NIR or MIR transparency window and large changes in refractive index. In their amorphous phase, these materials usually display a lower refractive index and low absorption when compared to their crystalline state which display a higher refractive index and typically larger extinction coefficients. The amorphous-crystalline reversible switching can be done via fast melt-quenching thermal processes triggered by laser or electrical impulses, relying on a substrate as a heat sink. The potential of PCMs in photonic devices can be limited by intrinsic material limitations as well as by device fabrication issues. To explore the cyclability of GSST, a PCM with large refractive index contrast and on-chip electrothermal switching on a silicon-on-insulator platform has been done to analyze potential failure mechanisms from both a material and device perspective. A brief outline of the instrumentation and phase change contrast analysis is provided. Dewetting of the PCM, delamination of and damage in the PECVD SiNx protective layer, elemental migration in the PCM and optical contrast decay have been observed in cycled GSST devices. Guidelines for device performance improvement are proposed, and an improved design with larger endurance is shown in progress.

reconfigurable photonics↗
NASA NTRS2002

Designing Crane Controls with Applied Mechanical and Electrical Safety Features

The use of overhead traveling bridge cranes in many varied applications is common practice. In particular, the use of cranes in the nuclear, military, commercial, aerospace, and other industries can involve safety critical situations. Considerations for Human Injury or Casualty, Loss of Assets, Endangering the Environment, or Economic Reduction must be addressed. Traditionally, in order to achieve additional safety in these applications, mechanical systems have been augmented with a variety of devices. These devices assure that a mechanical component failure shall reduce the risk of a catastrophic loss of the correct and/or safe load carrying capability. ASME NOG-1-1998, (Rules for Construction of Overhead and Gantry Cranes, Top Running Bridge, and Multiple Girder), provides design standards for cranes in safety critical areas. Over and above the minimum safety requirements of todays design standards, users struggle with obtaining a higher degree of reliability through more precise functional specifications while attempting to provide "smart" safety systems. Electrical control systems also may be equipped with protective devices similar to the mechanical design features. Demands for improvement of the cranes "control system" is often recognized, but difficult to quantify for this traditionally "mechanically" oriented market. Finite details for each operation must be examined and understood. As an example, load drift (or small motions) at close tolerances can be unacceptable (and considered critical). To meet these high functional demands encoders and other devices are independently added to control systems to provide motion and velocity feedback to the control drive. This paper will examine the implementation of Programmable Electronic Systems (PES). PES is a term this paper will use to describe any control system utilizing any programmable electronic device such as Programmable Logic Controllers (PLC), or an Adjustable Frequency Drive (AID) 'smart' programmable motion controller. Therefore the use of the term Programmable Electronic Systems (PES) is an encompassing description for a large spectrum of programmable electronic control devices.

Lytle, Bradford P.↗
NASA NTRS1972

Energy absorber uses expanded coiled tube

Mechanical shock mitigating device, based on working material to its failure point, absorbs mechanical energy by bending or twisting tubing. It functions under axial or tangential loading, has no rebound, is area independent, and is easy and inexpensive to build.

Johnson, E. F.↗