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Results for “device failure mechanism”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Detection of bearing failure in mechanical devices using neural networks

We present a novel time-domain method for the detection of faulty bearings that has direct applicability to monitoring the health of the turbo pumps on the Space Shuttle Main Engine. A feed-forward neural network was trained to detect modelled roller bearing faults on the basis of the periodicity of impact pulse trains. The network's performance was dependent upon the number of pulses in the network's input window and the signal-to-noise ratio of the input signal. To test the model's validity, we fit the model's parameters to an actual vibration signal generated by a faulty roller element bearing and applied the network trained on this model to detect faults in actual vibration data. When this network was tested on the actual vibration data, it correctly identified the vibration signal as a fault condition 76 percent of the time.

Burne, Richard A.↗
DOE OSTI2021

Mitigating ion migration in perovskite solar cells

The intrinsic ion migration in the metal halide perovskite absorber layer and its interfaces seriously limits the device stability of perovskite solar cells (PSCs). Despite considerable efforts to mitigate the ion migration issue, it remains a formidable challenge in the commercialization of PSCs. In this paper, we provide a short review of the device failure mechanisms induced by intrinsic ion migration and discuss the detrimental effects of ion migration on different component layers of PSCs. We outline the corresponding strategies to mitigate ion migration in PSCs and provide an insight on materials engineering to attain long-term stabilized perovskite photovoltaics.

14 SOLAR ENERGY↗
NASA NTRS2010

Towards Prognostics of Power MOSFETs: Accelerated Aging and Precursors of Failure

This paper presents research results dealing with power MOSFETs (metal oxide semiconductor field effect transistor) within the prognostics and health management of electronics. Experimental results are presented for the identification of the on-resistance as a precursor to failure of devices with die-attach degradation as a failure mechanism. Devices are aged under power cycling in order to trigger die-attach damage. In situ measurements of key electrical and thermal parameters are collected throughout the aging process and further used for analysis and computation of the on-resistance parameter. Experimental results show that the devices experience die-attach damage and that the on-resistance captures the degradation process in such a way that it could be used for the development of prognostics algorithms (data-driven or physics-based).

Celaya, Jose R.↗
NASA NTRS2002

Radiation Hardness Assurance for Space Systems

The space radiation environment can lead to extremely harsh operating conditions for on-board electronic box and systems. The characteristics of the radiation environment are highly dependent on the type of mission (date, duration and orbit). Radiation accelerates the aging of the electronic parts and material and can lead to a degradation of electrical performance; it can also create transient phenomena on parts. Such damage at the part level can induce damage or functional failure at electronic box, subsystem, and system levels. A rigorous methodology is needed to ensure that the radiation environment does not compromise the functionality and performance of the electronics during the system life. This methodology is called hardness assurance. It consists of those activities undertaken to ensure that the electronic piece parts placed in the space system perform to their design specifications after exposure to the space environment. It deals with system requirements, environmental definitions, part selection, part testing, shielding and radiation tolerant design. All these elements should play together in order to produce a system tolerant to.the radiation environment. An overview of the different steps of a space system hardness assurance program is given in section 2. In order to define the mission radiation specifications and compare these requirements to radiation test data, a detailed knowledge of the space environment and the corresponding electronic device failure mechanisms is required. The presentation by J. Mazur deals with the Earth space radiation environment as well as the internal environment of a spacecraft. The presentation by J. Schwank deals with ionization effects, and the presentation by T. Weatherford deals with Single particle Event Phenomena (SEP) in semiconductor devices and microcircuits. These three presentations provide more detailed background to complement the sections 3 and 4. Part selection and categorization are discussed in section 5. Section 6 presents the organization of the hardness assurance within a project. Section 7 discusses emerging radiation hardness assurance issues.

Poivey, Christian↗
DOE OSTI2022

Overcoming Degradation Pathways to Achieve Stable Blue Perovskite Light-Emitting Diodes

Mixed halide (Br/Cl) perovskite nanocrystals (NCs) that represent an advanced blue emitter commonly suffer from spectral instability and poor lifespan; notably, the lack of understanding of the failure mechanisms of these devices has restricted the future progress. Here, we determine that the degradation of CsPbBr x Cl 3– x NCs containing blue light-emitting diodes (LEDs) is due to the combination of two effects. Cl – drift among adjoining NCs under an electric field is found to induce a Cl-deficient material region in multiple NC layers, which dominates the unstable electroluminescence and causes fast degradation in the corresponding devices. In comparison, the monolayer NC devices that feature restricted anion drift pathways exhibit better operational stability; however, excess hole injection is demonstrated to induce irreversible chlorine loss in NCs. Such a process that largely arises from electrochemical oxidation of Cl – initiates a mild device failure in operation of tens of minutes. Through revealing these mechanisms, we modulate the devices’ construction and operational conditions to achieve a longer lifespan.

14 SOLAR ENERGY↗
NASA NTRS1975

Migratory gold resistive shorts - Chemical aspects of a failure mechanism

Integrated-circuit devices using the Ti/W/Au metal system are subject to failure mechanisms based on electrolytic corrosion. The migratory gold resistive short (MGRS) failure mode is one example of this mechanism and results in the formation of filamentary or dendritic deposits of gold between adjacent stripes on the IC chip. This reaction requires the presence of a sufficient amount of water, a bias voltage between adjacent stripes, and the activation of the cathodic (-) stripe. Gold ions are transported from anode to cathode through a film of moisture adsorbed on the surface of the chip; halide ions are probably involved in the transfer. Their presence is verified experimentally by X-ray photoelectron spectroscopy. Some of the chemical and electrostatic factors involved in the MGRS mechanism are discussed in this paper, including the questions of a threshold level of moisture and contamination.

Grunthaner, F. J.↗
NASA NTRS1999

MEMS Reliability Assurance Guidelines for Space Applications

This guide is a reference for understanding the various aspects of microelectromechanical systems, or MEMS, with an emphasis on device reliability. Material properties, failure mechanisms, processing techniques, device structures, and packaging techniques common to MEMS are addressed in detail. Design and qualification methodologies provide the reader with the means to develop suitable qualification plans for the insertion of MEMS into the space environment.

Stark, Brian↗
DOE OSTI2020

14 MeV DT Neutron Test Facility at the Sandia Ion Beam Laboratory

A recently completed LDRD project has provided a new facility at Sandia for testing effects of energetic neutrons on electronic components. 14 MeV neutrons are produced with a deuterium ion beam onto a thin-film tritide target. The goal of the project was to increase the neutron fluence to levels needed for radiation effects testing and qualification. This goal was achieved through two technical advances. First, a new multi-layer target concept was developed to reduce the rate of tritium loss from the target by isotope exchange, thereby reducing tritium usage and increasing target lifetime. The second advance was the construction of a new test chamber designed to maximize neutron flux at test locations. Together, these increased the available neutron fluence by several orders of magnitude. This new capability is being used in tests for Sandia nuclear weapon programs, evaluation of commercial parts such as highly-scaled CMOS SRAM lCs, and tests of new devices under development at Sandia such as lll-V HBTs, gallium nitride high-voltage diodes, and for fundamental studies of physical mechanisms of device failure.

36 MATERIALS SCIENCE↗
NASA NTRS2012

Prognostics Approach for Power MOSFET Under Thermal-Stress

The prognostic technique for a power MOSFET presented in this paper is based on accelerated aging of MOSFET IRF520Npbf in a TO-220 package. The methodology utilizes thermal and power cycling to accelerate the life of the devices. The major failure mechanism for the stress conditions is dieattachment degradation, typical for discrete devices with leadfree solder die attachment. It has been determined that dieattach degradation results in an increase in ON-state resistance due to its dependence on junction temperature. Increasing resistance, thus, can be used as a precursor of failure for the die-attach failure mechanism under thermal stress. A feature based on normalized ON-resistance is computed from in-situ measurements of the electro-thermal response. An Extended Kalman filter is used as a model-based prognostics techniques based on the Bayesian tracking framework. The proposed prognostics technique reports on preliminary work that serves as a case study on the prediction of remaining life of power MOSFETs and builds upon the work presented in [1]. The algorithm considered in this study had been used as prognostics algorithm in different applications and is regarded as suitable candidate for component level prognostics. This work attempts to further the validation of such algorithm by presenting it with real degradation data including measurements from real sensors, which include all the complications (noise, bias, etc.) that are regularly not captured on simulated degradation data. The algorithm is developed and tested on the accelerated aging test timescale. In real world operation, the timescale of the degradation process and therefore the RUL predictions will be considerable larger. It is hypothesized that even though the timescale will be larger, it remains constant through the degradation process and the algorithm and model would still apply under the slower degradation process. By using accelerated aging data with actual device measurements and real sensors (no simulated behavior), we are attempting to assess how such algorithm behaves under realistic conditions.

Power MOSFET PHM↗
NASA NTRS1993

Role of failure-mechanism identification in accelerated testing

Accelerated life testing techniques provide a short-cut method to investigate the reliability of electronic devices with respect to certain dominant failure mechanisms that occur under normal operating conditions. However, accelerated tests have often been conducted without knowledge of the failure mechanisms and without ensuring that the test accelerated the same mechanism as that observed under normal operating conditions. This paper summarizes common failure mechanisms in electronic devices and packages and investigates possible failure mechanism shifting during accelerated testing.

Hu, J. M.↗
NASA NTRS1986

Investigation of advanced fault insertion and simulator methods

The cooperative agreement partly supported research leading to the open-literature publication cited. Additional efforts under the agreement included research into fault modeling of semiconductor devices. Results of this research are presented in this report which is summarized in the following paragraphs. As a result of the cited research, it appears that semiconductor failure mechanism data is abundant but of little use in developing pin-level device models. Failure mode data on the other hand does exist but is too sparse to be of any statistical use in developing fault models. What is significant in the failure mode data is that, unlike classical logic, MSI and LSI devices do exhibit more than 'stuck-at' and open/short failure modes. Specifically they are dominated by parametric failures and functional anomalies that can include intermittent faults and multiple-pin failures. The report discusses methods of developing composite pin-level models based on extrapolation of semiconductor device failure mechanisms, failure modes, results of temperature stress testing and functional modeling. Limitations of this model particularly with regard to determination of fault detection coverage and latency time measurement are discussed. Indicated research directions are presented.

Dunn, W. R.↗
NASA NTRS2000

Development of NASA-DeBakey Ventricular Assist Device Using Numerical Aerospace Simulation Technology

Over three million Americans and 20 million people worldwide suffer from some form of heart failure. Mechanical heart assist devices are being used as a temporary support to sick ventricle and valves as a bridge-to-transplant or bridge-to-recovery. This viewgraph presentation gives an overview of the development of NASA-DeBakey Ventricular Assist Device (VAD) using numerical aerospace simulation technology.

Kwak, Dochan↗
DOE OSTI2020

ENG 572 Final Report

Thermo-electric coolers (TECs) provide an essential function in many high-powered applications by diverting heat away from a temperature-sensitive load. This summer I have worked with Sandia National Laboratories in exploring the failure mechanisms behind said devices. I have been tasked with determining a plan of action for two TECs manufactured by two different companies labeled A and B respectively. Prior to my involvement in the project, the former has displayed failures during normal operation within its packaging. The latter was subsequently chosen to resolve these issues. Thermal cycling between the extreme expected operating temperatures (-40°C to 80°C) was applied to 5 unmounted TECAs over a period of 5 hours with 1-hour soaks at each extreme. The unmounted TECBs are currently undergoing the same process, and the task is expected to be completed over the next few weeks. The results of the TECA characterization have indicated no failure has occurred, which indicates that failure will need to be induced through either higher temperature extremes or additional mechanical stress.

47 OTHER INSTRUMENTATION↗