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All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Wall contraction in Bloch wall films

The phenomenon of wall contraction characterized by a peak in the velocity field relationship and a region of negative differential mobility is observed. Uniaxial magnetic thin films of various compositions and magnetic properties are studied in careful interrupted pulse experiments. The observed results agree quite well with the theory for bulk samples.

Bartran, D. S.↗
NASA NTRS1972

Wall contraction in Bloch wall films.

The phenomenon of wall contraction characterized by a peak in the velocity-field relationship and a region of negative differential mobility is observed in uniaxial magnetic thin films of various magnetic properties by careful interrupted-pulse experiments. The observed results agree quite well with the theory for bulk samples when the extensive flux closure of thin film walls is accounted for by a suitable empirical scaling factor.

Bartran, D. S.↗
NASA NTRS1993

Partially Grooved Domain Stabilization Structures for Vertical Bloch Line Memory

Bias field stability ranges were measured and numerically simulated for magnetic domains ingarnets stabilized by partially grooved rectangular and ring grooves. Simulation results agreefavorably with experimental results when finite slope effects of the groove walls are included. Asbias fields increase, rectangular and ring domains both destabilize through stripe head recession. Asbias fields decrease, destabilization in rectangular domains occurs by runout, while destabilization inring domains occurs by midstripe domain buckling. While ring domains are stable at lower biasfields than rectangular domains, bias field stability ranges are approximately equal. Hence, for thesame partial grooving depth, rectangular domains are preferred because they offer higher storagedensity potential in Vertical Block Line (VBL) storage arrays as long as bit propagation margins atstripe ends are sufficient.

Katti, R. R.↗
NASA NTRS1993

A Magnetic Solid-State Storage Technology: Vertical Bloch Line Storage

No storage technology is known to exist today which simultaneously offers high-storage density, nonvolatility, and a solid-state form factor. For example, common random access memories are solid-state, but are volatile and typically offer modest density. Alternatively, mainstream magnetic disk and magnetic tape systems offer high storage density and nonvolatility, but are fundamentally not solid-state. A number of applications exist which would be suited well with high performance solid- state technology. NASA, for example, is beginning baseline solid-state recorders for upcoming space missions, such as the Cassini mission to Saturn.

Katti, R. R.↗
NASA NTRS1984

Effect of the Mott cross section on charge identification in the HEAO-3 Heavy Cosmic Ray Experiment

Corrections to the Z-squared dependence of ion chamber and Cherenkov response due to the Mott cross section are calculated for the HEAO-3 Heavy Cosmic Ray Experiment. The effect of the production and escape of high energy secondary electrons on detector response is accounted for by numerical calculations. These secondary electron effects are shown to influence the size of the non Z-squared effects and thus affect the charge assignments and detector resolution. The Bloch and relativistic Bloch corrections are not included in the results presented here but may be combined with the Mott corrections when the Bloch corrections are properly evaluated.

Derrickson, J. H.↗
NASA NTRS1985

Ariel 6 measurements of ultra-heavy cosmic ray fluxes in the region Z or = 48

For this re-analysis of the Ariel VI data, the contribution of non Z square effects to the restricted energy loss and to Cerenkov radiation in the Bristol sphere has been evaluated using the Mott cross section ratios and the non-relativistic Bloch correction. Results obtained were similar in form to those derived for HEAO3 but with maximum deviations approximately 10% rather than 15% for the Mott term, corresponding to a thinner detector. Because of the large uncertainties in the parameters involved, no relativistic Bloch term was included. In addition the experiments on the HEAO detector make the application of a correction to the Cerenkov response of doubtful justification and none was applied in this analysis. An energy dependent correction was made using an effective energy calculated from the vertical cut-off for a given event. The maximum value of this correction was about 0.6% in Z for low cut-offs, declining to approximately zero by 10 GV.

Fowler, P. H.↗
NASA NTRS1994

Partial-Thickness Grooves In A VBL Memory Device

Bias magnetic fields tailored to match those needed elsewhere in device. Grooves through part of thickness of magnetic garnet storage layer of vertical-Bloch-line (VBL) memory device used to confine magnetic bubble and stripe domains in desired storage areas. VBL-memory concept described in "Vertical-Bloch-Line Memory" (NPO-18467).

Katti, Romney R.↗
NASA NTRS1994

Imaging Domains In Magnetic Garnets By Use Of TSMFM

Tunneling-stabilized magnetic-force microscopy (TSMFM) demonstrated to yield images of magnetic domains in low-coercivity magnetic garnets with perpendicular anisotropy. Ability to generate images of domain walls and minute vertical Bloch lines aids study of vertical-Bloch-line magnetic memory devices that contain garnets. TSMFM provides desired resolution because its resolution not limited by diffraction.

Katti, Romney R.↗
NASA NTRS1998

Computational Modeling of Semiconductor Dynamics at Femtosecond Time Scales

The Interchange No. NCC2-5149 deals with the emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. To build such devices and subsystems, one needs to model the entire chip. PICs are useful for building components for integrated optical transmitters, integrated optical receivers, optical data storage systems, optical interconnects, and optical computers. For example, the current commercial rate for optical data transmission is 2.5 gigabits per second, whereas the use of shorter pulses to improve optical transmission rates would yield an increase of 400 to 1000 times. The improved optical data transmitters would be used in telecommunications networks and computer local-area networks. Also, these components can be applied to activities in space, such as satellite to satellite communications, when the data transmissions are made at optical frequencies. The research project consisted of developing accurate computer modeling of electromagnetic wave propagation in semiconductors. Such modeling is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Presently, there are no computer codes that could provide this modeling. Current codes do not solve the full vector, nonlinear, Maxwell's equations, which are required for these short pulses and also current codes do not solve the semiconductor Bloch equations, which are required to accurately describe the material's interaction with femtosecond pulses. The research performed under NCC2-5149 solves the combined Maxwell's and Bloch's equations.

Agrawal, Govind P.↗
NASA NTRS1996

Computational Modeling of Ultrafast Pulse Propagation in Nonlinear Optical Materials

There is an emerging technology of photonic (or optoelectronic) integrated circuits (PICs or OEICs). In PICs, optical and electronic components are grown together on the same chip. rib build such devices and subsystems, one needs to model the entire chip. Accurate computer modeling of electromagnetic wave propagation in semiconductors is necessary for the successful development of PICs. More specifically, these computer codes would enable the modeling of such devices, including their subsystems, such as semiconductor lasers and semiconductor amplifiers in which there is femtosecond pulse propagation. Here, the computer simulations are made by solving the full vector, nonlinear, Maxwell's equations, coupled with the semiconductor Bloch equations, without any approximations. The carrier is retained in the description of the optical pulse, (i.e. the envelope approximation is not made in the Maxwell's equations), and the rotating wave approximation is not made in the Bloch equations. These coupled equations are solved to simulate the propagation of femtosecond optical pulses in semiconductor materials. The simulations describe the dynamics of the optical pulses, as well as the interband and intraband.

Goorjian, Peter M.↗
NASA NTRS1973

Photoemission from CsI - Calculation.

Calculations of optical and photoemission spectra for CsI based on first-order allowed transitions between Bloch-wave states are discussed. The calculations, utilizing energy-band data for CsI published by Onodera (1968), were performed by computer sampling of regions in the Brillouin zone. The photoelectric spectra of CsI, calculated on the basis of an interpolated band scheme, display features which are in general agreement with the experimentally determined photoelectric energy distribution curves.

Distefano, T. H.↗