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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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248 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

A Predictive Bubble Point Pressure Model for Porous Liquid Acquisition Device Screens

This article presents a simplified model for porous screen channel liquid acquisition devices based on a maximum bubble point pressure method from Adamson and Gast (1997). To validate the model, three 304 stainless steel (325 × 2300, 450 × 2750, and 510 × 3600) mesh samples were tested in methanol, acetone, isopropyl alcohol, and water. Screen pores are estimated based on analysis from scanning electron microscopy, historical data, and current test data. Results show that the bubble point pressure is proportional to the surface tension of the fluid only when accounting for nonzero contact angles. The previous assumption that bubble point pressure scales inversely with effective pore diameter is shown to be invalid, as the second finest 450 × 2750 produced the highest bubble point of the three screens. The simplified bubble point model can be used to make predictions for any pure fluid when pore diameters are based on bubble point tests and not SEM analysis.

Liquid Acquisition Device↗
NASA NTRS1974

Battery testing device

A battery testing device is described for testing the cells of a multiple-cell battery, the battery having a cover plate with access holes to provide access to the connecting straps between cells. A panel of probe assembly receiving holes is located to correspond to the location of the access holes when the panel is positioned on top of the battery. A probe assembly is positioned within each probe assembly receiving hole, with a spring biased electrically conductive plunger to make electrical contact with the connecting strap through the corresponding access hole when the panel is pushed towards the top of the battery.

Boshers, W. A.↗
NASA NTRS1977

A Survey of Lunar Rock Types and Comparison of the Crusts of Earth and Moon

The principal known types of lunar rocks are briefly reviewed, and their chemical relationships discussed. In the suite of low-KREEP highland rocks, Fe/(Fe + Mg) in the normative mafic minerals increases and the albite content of normative plagioclase decreases as the total amount of normative plagioclase increases, the opposite of the trend predicted by the Bowen reaction principle. Lunar highland samples analyzed are uniformly distributed in this sequence, in which normative plagioclase contents range from ~ 40 percent to ~ 100 percent. The distribution of compositions of rocks from terrestrial layered mafic intrusives is substantially different: here the analyses fall in several discrete clusters (anorthositic rocks, norites, granophyres and ferrogabbros, ultramafics), and the chemical trends noted above are not reproduced. It is suggested that the observed trends in lunar highland rocks could be produced by crystal fractionation in a deep global surface magma system if (1) plagioclase tended to float, upon crystallization, and (2) the magma was kept agitated and well mixed (probably by thermal convection) until crystallization was far advanced and relatively little residual liquid was left. When such a system was finally immobilized, the Fe-, Na-rich residual liquid would produce Fe-rich mafic minerals in the upper levels of the system, but could not much alter the composition of abundant calcic plagioclase. Conversely, the same liquid would produce sodic plagioclase deep in the sequence, but could not much alter the composition of abundant magnesian mafic minerals. After the crustal system solidified, but before extensive cooling had developed a thick, strong lithosphere, mantle convection was able to draw portions of the lunar anorthositic crust down into the mantle in a manner analogous to the present-day behavior of the terrestrial mantle and crust. At depth, the crustal material was heated; KREEP-rich norite was extracted by partial melting and erupted at the surface as a lava, analogous to terrestrial andesite eruptions.

John A Wood↗
NASA NTRS2014

Influential Factors for Liquid Acquisition Device Screen Selection for Cryogenic Propulsion Systems

This paper presents the influential factors which govern screen selection for liquid acquisition devices (LADs) operating in microgravity conditions for future in-space cryogenic propulsion engines and cryogenic propellant depots. Space flight requirements, which include mass flow rate, acceleration level and direction, and thermal environment, dictate screen selection for a particular mission. The five influential factors include bubble point pressure, flow-through-screen pressure drop, wicking rate, screen compliance, and material compatibility. Governing equations and analytical models for these parameters are developed from first principles. A comprehensive survey of the historical data on coarser LAD meshes over four decades of work is conducted, and liquid hydrogen data for finer Dutch Twill meshes (325 x 2300, 450 x 2750, 510 x 3600) from recently concluded experiments is also presented to validate analytical models. Each of these parameters is measurable from ground based tests, making it facile to predict flight system performance. Therefore analytical models in this paper will be valuable for future LAD designs for both cryogenic and storable propulsion systems. Additionally, analysis will be given on the impact of the factors on liquid hydrogen systems.

Fuel Depot↗
NASA NTRS2014

Screen Channel Liquid Acquisition Device Outflow Tests in Liquid Hydrogen

This paper presents experimental design and test results of the recently concluded 1-g inverted vertical outflow testing of two 325x2300 full scale liquid acquisition device (LAD) channels in liquid hydrogen (LH 2 ). One of the channels had a perforated plate and internal cooling from a thermodynamic vent system (TVS) to enhance performance. The LADs were mounted in a tank to simulate 1-g outflow over a wide range of LH 2 temperatures (20.3 – 24.2 K), pressures (100 – 350 kPa), and flow rates (0.010 – 0.055 kg/s). Results indicate that the breakdown point is dominated by liquid temperature, with a second order dependence on mass flow rate through the LAD. The best performance is always achieved in the coldest liquid states for both channels, consistent with bubble point theory. Higher flow rates cause the standard channel to break down relatively earlier than the TVS cooled channel. Both the internal TVS heat exchanger and subcooling the liquid in the propellant tank are shown to significantly improve LAD performance.

Fuel Depot↗
NASA NTRS2022

A Transient Hydrodynamic Model of Screen Channel Liquid Acquisition Devices for In-Space Cryogenic Propellant Management

Screen channel liquid acquisition devices (LADs) will play a crucial role in future deep space travel. It is essential that vapor-free delivery of propellants during tank-to-tank transfer is ensured to maximize yield from storage tanks and prevent potential combustion instabilities. The screen channel LAD utilizes a fine screen wire mesh that can separate phases in a low Bond number (i.e. microgravity) environment using surface tension forces. This study presents the development and verification of a new model for transient screen compliance, one of the influential factors for screen channel LAD design. Screen compliance is crucial during LAD channel outflow transients because the slight deflection of the screen can provide needed mass to satisfy rapid outflow demands and reduce the pressure difference across the screen. The model is successfully verified against CFD simulations. In addition, the characteristic speed for the governing screen compliance equations is derived which allows for numerical stability criteria to be established. As shown in this study, the transient maximum pressure difference across the screen can greatly exceed the steady state maximum pressure difference across the screen in many cases.

Hydrodynamics Simulations↗
DOE OSTI2024

From wide to ultrawide-bandgap semiconductors for high power and high frequency electronic devices

Abstract Wide and ultrawide-bandgap (U/WBG) materials have garnered significant attention within the semiconductor device community due to their potential to enhance device performance through their substantial bandgap properties. These exceptional material characteristics can enable more robust and efficient devices, particularly in scenarios involving high power, high frequency, and extreme environmental conditions. Despite the promising outlook, the physics of UWBG materials remains inadequately understood, leading to a notable gap between theoretical predictions and experimental device behavior. To address this knowledge gap and pinpoint areas where further research can have the most significant impact, this review provides an overview of the progress and limitations in U/WBG materials. The review commences by discussing Gallium Nitride, a more mature WBG material that serves as a foundation for establishing fundamental concepts and addressing associated challenges. Subsequently, the focus shifts to the examination of various UWBG materials, including AlGaN/AlN, Diamond, and Ga 2 O 3 . For each of these materials, the review delves into their unique properties, growth methods, and current state-of-the-art devices, with a primary emphasis on their applications in power and radio-frequency electronics.

Materials Science↗
DOE OSTI2026

Direct comparison of gamma, electron beam and X-ray radiation effects on the polymers of a pulsed lavage device

Gamma radiation used for sterilization of medical devices is challenged by cobalt-60 supply and commercial capacity. To maintain a robust radiation sterilization marketplace for the rapidly growing single-use medical device industry, investigation of potential alternatives to gamma technology, such as electron beam (e-beam) and X-ray technology, is critical. In this work, we directly compare the effects of radiation source and absorbed dose level on the polymeric materials and function of a commercial pulsed lavage device used for wound care. Product functionality, polymer mechanical, and polymer optical properties were evaluated using standard methods and input from the device manufacturer. Test results show that functionality of the product was not inhibited by radiation although the battery in the device exposed to X-ray exhibited greater voltage loss compared to batteries in products exposed to gamma or e-beam. Statistically significant differences between gamma and e-beam exposure and between gamma and X-ray exposure were also observed for product appearance in terms of yellowness index of several of the polymers considered. Overall, the results of this study support the viability of e-beam and X-ray radiation technologies as alternatives to cobalt-60 gamma technology for sterilization of the single-use pulsed lavage medical device investigated.

Electron beam↗
NASA NTRS2012

Analysis of Screen Channel LAD Bubble Point Tests in Liquid Methane at Elevated Temperature

This paper examines the effect of varying the liquid temperature and pressure on the bubble point pressure for screen channel Liquid Acquisition Devices in cryogenic liquid methane using gaseous helium across a wide range of elevated pressures and temperatures. Testing of a 325 x 2300 Dutch Twill screen sample was conducted in the Cryogenic Components Lab 7 facility at the NASA Glenn Research Center in Cleveland, Ohio. Test conditions ranged from 105 to 160K and 0.0965 – 1.78 MPa. Bubble point is shown to be a strong function of the liquid temperature and a weak function of the amount of subcooling at the LAD screen. The model predicts well for saturated liquid but under predicts the subcooled data.

Reaction Control System↗
DOE OSTI2026

How efficiently can AI recognize Wireless Devices?

This poster presents a hardware benchmarking methodology for a 3-layer CNN waveform classifier deployed using ONNX Runtime on an NVIDIA Jetson AGX Orin. The dataset consist of 9 signal types, -30 to +30 dB SNR with 5dB increments. Benchmarking on the Jetson AGX Orin gave an accuracy of 91.9% and GPU throughput of 107,120 predictions/sec (23× faster than CPU). The Jetson GPU reached approximately 27M samples/sec with stable performance but fell below the 40 MHz rate needed for real-time radio feeds. Sustained testing of 5 minutes confirmed stable performance with no memory leaks, establishing a reproducible benchmarking baseline for future edge-deployment optimization.

99 - GENERAL AND MISCELLANEOUS↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
DOE OSTI2026

Simple device modification simultaneously enhances indoor passive evaporative cooling power and duration

Passive evaporative cooling from a damp cloth or vessel can be used for localized cooling of perishables such as food and medicine, drinking water, and even people. Such applications have two key objectives, which are normally in tension with each other: minimizing the water consumption rate and maximizing the cooling (steady-state temperature swing between the cool cloth and the warm surroundings). Here, we present a simple device that delivers higher performance in both metrics simultaneously by adding a perforated aluminum foil sheet suspended over a stagnant air layer to thermally shield the evaporating surface while also facilitating mass transfer. Experimental results demonstrate a simultaneous 10%–25% increase in temperature swing and 2–3× reduction in water consumption rate as compared to conventional evaporative cooling. This improvement is achieved through careful modeling to optimize the coupled heat and mass transfer through the airgap (thermally insulating and vapor permeable) and perforated foil (infrared reflective and vapor permeable).

Chen, Sarah Mizuno↗
DOE OSTI2026

Understanding Photovoltage Deficits in Electrochemically Grown Tin Sulfide (SnS) Thin-Film Photovoltaic Devices

Tin­(II) sulfide (SnS) is an earth-abundant semiconductor with a direct optical bandgap of ca. 1.1 eV, which makes it a promising absorber material for thin-film photovoltaic (PV) devices. However, existing devices have significant photovoltage deficits, which may be related to the anisotropic structure of the layered Herzenbergite SnS crystal structure. Here, we explore electrochemical deposition as a near room temperature path to oriented SnS crystal films on Mo and FTO substrates and employ vibrating Kelvin probe surface photovoltage (SPV) spectroscopy and J–V measurements to identify conversion losses in them. According to grazing-incidence X-ray diffraction and SEM, the SnS films consist of crystalline microplates with preferred orientation in the [111] and [001] directions. The bare SnS films produce only small and irreversible surface photovoltage signals, due charge trapping and recombination at the SnS surfaces, but addition of a CdS buffer layer lowers the charge recombination rate by 2 orders of magnitude and increases both the photovoltage and its reversibility due to the formation of a p-SnS/n-CdS junction. According to SPV, the FTO/SnS back interface (but not the Mo/SnS interface) forms a detrimental p–n junction that hinders hole transfer. Additional shunting through the relatively open microcrystal SnS layers and a lower conductivity of the FTO substrate explain the low power conversion efficiencies of the final devices (0.18 and 0.10% for the Mo and FTO substrates). Altogether, this work establishes a low-temperature path for the fabrication of crystalline SnS film-based solar cells and identifies the bottlenecks that limit high photoconversion efficiency.

deposition↗
DOE OSTI2025

Carbon in GaN as a nonradiative recombination center

Trap-assisted nonradiative recombination has been shown to limit the efficiency of optoelectronic devices. While substitutional carbon (⁠C N ) has been suggested to be a nonradiative recombination center in GaN devices, a complete recombination cycle including the two charge-state transition levels has not been previously described. In this work, we investigate the trap-assisted recombination process due to C N in GaN, including multiphonon emission, radiative recombination, trap-assisted Auger–Meitner (TAAM) recombination as well as thermal emission of holes. Our study shows the key role of TAAM processes at the high carrier densities relevant for devices. We also reveal the carrier-density regimes where thermal emission and radiative recombination are expected to play an observable role. Our results highlight that carbon concentrations exceeding ~10 17 cm −3 can have a noticeable impact on device efficiency, not just in GaN active layers but also in InGaN and AlGaN. Furthermore, our comprehensive formalism not only offers detailed results for carbon but also provides a general framework for assessing the multiple processes that participate in trap-assisted recombination in semiconductors.

36 MATERIALS SCIENCE↗