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At least 37 records · Page 2

Characterizing hole trap production due to proton irradiation in germanium cross-strip detectors

We present an investigation into the effects of high-energy proton damage on charge trapping in germanium cross-strip detectors with the goal of accomplishing three important measurements. First, we calibrated and characterized the spectral resolution of a spare COSI-balloon detector in order to determine the effects of intrinsic trapping, finding that electron trapping due to impurities dominates over hole trapping in the undamaged detector. Second, we performed two rounds of proton irradiation of the detector in order to quantify, for the first time, the rate at which charge traps are produced by proton irradiation. We find that the product of the hole trap density and cross-sectional area, [nσ] h , follows a linear relationship with the proton fluence, F p , with a slope of (5.4 ± 0.4) x 10 -11 cm/p + . Third, by utilizing our measurements of physical trapping parameters, we performed calibrations which corrected for the effects of trapping and mitigated degradation to the spectral resolution of the detector.

79 ASTRONOMY AND ASTROPHYSICS

Impact of trapping on tritium self-sufficiency and tritium inventories in fusion power plant fuel cycles

The dynamic analysis of fusion power plant (FPP) fuel cycles highlights the challenge of achieving tritium self-sufficiency in future FPPs. While state-of-the-art fuel cycle models offer valuable insights into the necessary design parameters for attaining tritium self-sufficiency, none of these models currently consider the impact of tritium trapping within fuel cycle components. However, detailed analysis of individual components reveals that substantial amounts of tritium can be trapped within the first wall, divertors, and breeding blanket systems, suggesting that tritium trapping may significantly influence the FPP ability to achieve self-sufficiency. The compounded effects of additional tritium traps generated by irradiation effects and component replacements further exacerbate this challenge. The novelty of this work is the integration of an explicit, physics-based model for tritium trapping, evolution of damage-induced traps, and component replacements into a dynamic, system-level model of a fuel cycle. The results show an increase of a factor 10 3 – 10 4 of tritium inventory in the first wall and vacuum vessel of an ARC-class FPP when accounting for the aforementioned phenomena. This, coupled with the replacement of components subject to significant tritium trapping, slows down fuel cycle dynamics, resulting in an extended tritium doubling time (50% increase), higher start-up inventory (30% increase), and higher required tritium breeding ratio (2%–5%) compared to a scenario without tritium trapping.

fuel cycle

Self‐Trapped Hole Migration and Defect‐Mediated Thermal Quenching of Luminescence in α‐ and β‐Ga 2 O 3

Gallium oxide (Ga 2 O 3 ) is a promising ultrawide bandgap semiconductor for next-generation power electronics and optoelectronic devices. Here, temperature-dependent and polarization-resolved photoluminescence excitation spectroscopy data, complemented by hybrid-functional first-principles calculations, are presented, and a microscopic model is derived that explains the interplay of hole migration, defect trapping, and carrier recombination at defects underlying thermal quenching phenomena in α- and β-Ga 2 O 3 . In α-Ga 2 O 3 , the UV emission is attributed to self-trapped holes, while the blue luminescence arises from defect-related processes, including gallium split vacancies and their defect complexes. Calculations reveal an energy barrier of 88 meV for self-trapped hole migration in α-Ga 2 O 3 , consistent with activation energies from temperature-dependent photoluminescence. This enables efficient trapping by defects, enhancing blue luminescence and quenching UV emission. In β-Ga 2 O 3 , a higher migration barrier of 0.36 eV reduces the defect trapping, allowing the UV self-trapped hole emission to remain intense, with blue luminescence emerging only at elevated temperatures. These results establish a direct link between self-trapped hole migration, defect trapping, and thermal quenching of emission in both phases. The insights advance the understanding of carrier dynamics in ultrawide bandgap oxides and may guide defect engineering for high-performance functional devices.

Hajizadeh, Nima [Leibniz-Institut im Forschungsver

Trap‐Engineering the Persistent Luminescence of Ca 3 Ga 4 O 9 :Tb 3+ via Al 3+ Substitution for Optical Data Storage

Abstract Optically stimulated luminescence (OSL) materials hold great potential for optical data storage (ODS) and anticounterfeiting applications. Nevertheless, the scarcity of suitable luminescent materials with deep‐level traps remains a significant obstacle. Herein, a host substation strategy have been employed to tune the persistent luminescence (PersL) and OSL properties of Ca 3 Ga 4 O 9 :Tb 3+ by Al 3+ substitution through trap engineering and demonstrated their potential. Specifically, the photoluminescence of the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ of Tb 3+ is first investigated due to its different occupancies of Ca 2+ . The influence of host substitution on the crystal structure, trap depth, trap density, PersL, and OSL properties have further investigated. A series of strong PersL and OSL peaks from the Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ with bluish‐green emissions have been observed. The Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ have shown controllable photon release upon thermal and optical stimuli, enhancing their performance for ODS. Thermally stimulated luminescence suggests that vacancy and defect concentrations inside the Ca 3‐x% (Ga 1‐y% Al y% ) 4 O 9 :x%Tb 3+ can be manipulated by Tb 3+ doping and Al 3+ substitution, which ultimately leads to the formation of deep traps and a broad distribution of traps with increased deep trap concentration. The work demonstrates that trap engineering through Al 3 ⁺ substitution is an effective method for tuning PersL and OSL properties of Ca 2.985 (Ga 1‐y% Al y% ) 4 O 9 :0.5%Tb 3+ for ODS.

Abeywickrama, Thulitha M. [Department of Chemistry

Integrated-photonics-based systems for polarization-gradient cooling of trapped ions

Trapped ions are a promising modality for quantum systems, with demonstrated utility as the basis for quantum processors and optical clocks. However, traditional trapped-ion systems are implemented using complex free-space optical configurations, whose large size and susceptibility to vibrations and drift inhibit scaling to large numbers of qubits. In recent years, integrated-photonics-based systems have been demonstrated as an avenue to address the challenge of scaling trapped-ion systems while maintaining high fidelities. While these previous demonstrations have implemented both Doppler and resolved-sideband cooling of trapped ions, these cooling techniques are fundamentally limited in efficiency. In contrast, polarization-gradient cooling can enable faster and more power-efficient cooling and, therefore, improved computational efficiencies in trapped-ion systems. While free-space implementations of polarization-gradient cooling have demonstrated advantages over other cooling mechanisms, polarization-gradient cooling has never previously been implemented using integrated photonics. In this paper, we design and experimentally demonstrate key polarization-diverse integrated-photonics devices and utilize them to implement a variety of integrated-photonics-based polarization-gradient-cooling systems, culminating in the first experimental demonstration of polarization-gradient cooling of a trapped ion by an integrated-photonics-based system. By demonstrating polarization-gradient cooling using an integrated-photonics-based system and, in general, opening up the field of polarization-diverse integrated-photonics-based devices and systems for trapped ions, this work facilitates new capabilities for integrated-photonics-based trapped-ion platforms.

atom optics

Design and fabrication of ion traps for low RF power dissipation

Large surface-electrode ion traps with multiple trapping regions and junctions are a natural approach to scaling trapped ion quantum computers, supporting the connectivity and ion counts necessary for complex quantum algorithms. However, a major hurdle in this scaling is on-chip power dissipation from the applied RF voltage, which increases at a rate between linear and cubic relative to trap size, depending on whether the losses are dielectric or Ohmic. Here, we present two versions of a trap with features designed to reduce both types of RF power dissipation. The first variant contains a raised RF electrode that increases the electrode–ground distance to reduce capacitance. Different DC voltage sources are demonstrated on this trap to show that technical noise before the filter remains the dominant source of voltage noise and therefore motional heating. The second variant additionally includes a method for removing dielectric from beneath the RF electrode to further reduce dielectric losses. These traps were demonstrated at room temperature with 40 Ca + ions. In conclusion, the similar heating rates and heating rate axial frequency dependencies between 2.4 and 3.0 MHz illustrate that this dielectric modification is not detrimental to trap performance.

Sterk, J. D. [Sandia National Laboratories (SNL-NM

SIREN: Scaling Ion-Traps by REquiring iNnovative Heterogenous Integration

The SIREN (Scaling Ion Traps by Requiring iNnovative heterogenous integration) project explores the feasibility of heterogeneous integration (HI) as a transformative approach to scaling ion traps, a critical technology for advancing quantum computers and atomic clocks. Traditional ion trap architectures face significant challenges in scalability due to limitations in optical access, fabrication techniques, and material constraints. SIREN addresses these challenges by leveraging HI, which combines different materials and fabrication processes to create more complex and efficient ion trap structures. HI integrated structures can be manufactured without compromising the process to maintain compatibility to ion traps. This project focuses on integrating a separately fabricated waveguide with a fully functional ion trap. The respective alignment between the pieces needs to be accurate to less than 2 µm to ensure that the light from the waveguide can overlap with the trapping region. The fine alignment must also be maintained through an ultra-high vacuum bake, a critical step in preparing an ion trap experiment. The project's outcomes suggest that heterogeneous integration is a promising pathway for overcoming current scalability barriers, paving the way for the next generation of quantum technologies. SIREN's findings contribute significantly to the field, offering a scalable solution that could accelerate the development of practical quantum computers and highly accurate atomic clocks.

42 ENGINEERING

High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

Messenger, S. R.

Operational Experience with the Internal Thermal Control System Dual-Membrane Gas Trap

A dual-membrane gas trap is currently used to remove non-condensed gases (NCG) from the Internal Thermal Control System (ITCS) coolant on board the International Space Station. The gas trap consists of concentric tube membrane pairs, comprised of outer hydrophilic tubes and inner hydrophobic fibers. Liquid coolant passes through the outer hydrophilic membrane, which traps the NCG. The inner hydrophobic fiber allows the trapped NCG to pass through and vent to the ambient atmosphere in the cabin. The purpose of the gas trap is to prevent gas bubbles from causing depriming, overspeed, and shutdown of the ITCS pump, and the current gas trap has performed flawlessly in this regard. However, because of actual operational conditions on-orbit, its gas removal performance and operational lifetime have been affected. This paper discusses experiences with several of these dual- membrane gas traps, including on-orbit gas venting rate, effects due to the presence of nickel in the ITCS coolant, and subsequent refurbishing to remove the nickel from the gas trap.

Leimkuehler, Thomas O.

Membrane-Based Gas Traps for Ammonia, Freon-21, and Water Systems to Simplify Ground Processing

Gas traps are critical for the smooth operation of coolant loops because gas bubbles can cause loss of centrifugal pump prime, interference with sensor readings, inhibition of heat transfer, and blockage of passages to remote systems. Coolant loops are ubiquitous in space flight hardware, and thus there is a great need for this technology. Conventional gas traps will not function in micro-gravity due to the absence of buoyancy forces. Therefore, clever designs that make use of adhesion and momentum are required for adequate separation, preferable in a single pass. The gas traps currently used in water coolant loops on the International Space Station are composed of membrane tube sets in a shell. Each tube set is composed of a hydrophilic membrane (used for water transport and capture of bubbles) and a hydrophobic membrane (used for venting of air bubbles). For the hydrophilic membrane, there are two critical pressures, the pressure drop and the bubble pressure. The pressure drop is the decrease in system pressure across the gas trap. The bubble pressure is the pressure required for air bubbles to pass across the water filled membrane. A significant difference between these pressures is needed to ensure complete capture of air bubbles in a single pass. Bubbles trapped by the device adsorb on the hydrophobic membrane in the interior of the hydrophilic membrane tube. After adsorption, the air is vented due to a pressure drop of approximately 1 atmosphere across the membrane. For water systems, the air is vented to the ambient (cabin). Because water vapor can also transport across the hydrophobic membrane, it is critical that a minimum surface area is used to avoid excessive water loss (would like to have a closed loop for the coolant). The currently used gas traps only provide a difference in pressure drop and bubble pressure of 3-4 psid. This makes the gas traps susceptible to failure at high bubble loading and if gas venting is impaired. One mechanism for the latter is when particles adhere to the hydrophobic membrane, promoting formation of a water layer about it that can blind the membrane for gas transport (Figure 1). This mechanism is the most probable cause for observed failures with the existing design. The objective of this project was to devise a strategy for choosing new membrane materials (database development and procedure), redesign of the gas trap to mitigate blinding effects, and to develop a design that can be used in ammonia and Freon-21 coolant loops.

Ritchie, Stephen M. C.

A Novel Repair Technique for the Internal Thermal Control System Dual-Membrane Gas Trap

A dual-membrane gas trap is currently used to remove gas bubbles from the Internal Thermal Control System (ITCS) coolant on board the International Space Station (ISS). The gas trap consists of concentric tube membrane pairs, comprised of outer hydrophilic tubes and inner hydrophobic fibers. Liquid coolant passes through the outer hydrophilic membrane, which traps the gas bubbles. The inner hydrophobic fiber allows the trapped gas bubbles to pass through and vent to the ambient atmosphere in the cabin. The gas trap was designed to last for the entire lifetime of the ISS, and therefore was not designed to be repaired. However, repair of these gas traps is now a necessity due to contamination from the on-orbit ITCS fluid and other sources on the ground as well as a limited supply of flight gas traps. This paper describes a novel repair technique that has been developed that will allow the refurbishment of contaminated gas traps and their return to flight use.

Leimkuehler, Thomas O.

Raccoon density estimation from camera traps for raccoon rabies management

Abstract Density estimation for unmarked animals is particularly challenging, yet density estimates are often necessary for effective wildlife management. Raccoons ( Procyon lotor ) are the primary terrestrial wildlife reservoir for Lyssavirus rabies within the United States. The raccoon rabies variant (RRVV) is actively managed at landscape scales using oral rabies vaccination (ORV) within the eastern United States. To effectively manage RRVV, it is important to know the density of raccoons to appropriately scale the density of ORV baits distributed on the landscape. We compared methods to estimate raccoon densities from camera‐trap data versus more intensive capture‐mark‐recapture (CMR) estimates across 2 land cover types (upland pine and bottomland hardwood) in the southeastern United States during 2019 and 2020. We evaluated the effect of alternative camera configurations and durations of camera trapping on density estimates and used an N‐mixture model to estimate raccoon densities, including covariates on abundance and detection. We further compared different methods of scaling camera‐based counts, with the maximum number of raccoons seen on any given image within a day best explaining density. Camera‐trap density estimates were moderately correlated with CMR estimates ( r = 0.56). However, densities from camera‐trap data were more reliable when classifying category of density as an index used to inform management (83% correct when compared to CMR estimates), although the densities in our study fell into the 2 lowest density classes only. Using more cameras reduced bias and uncertainty around density estimates; however, if ≤6 camera traps were used at a site, a line transect approach proved less biased than a grid design. Camera trapping should be conducted for at least 3 weeks for more accurate estimates of raccoon population density in our study area (<5% bias). We show that camera‐trap data can be used to assign raccoon densities to management‐relevant density index bins, but more studies are needed to ensure reliability across a greater range of environmental conditions and raccoon densities.

Davis, Amy J.

Deuterium trapping mechanisms in reduced activation ferritic martensitic steels and their correlation with mechanical strengthening

Development of high-strength materials often involves introduction of additional strengthening microstructures that also serve as tritium trapping sites. Such additions in fusion material development could degrade the fuel efficiency in fusion reactors and raise radiological concerns. The contribution of individual microstructure features in hydrogen trapping must be evaluated to ensure fuel efficiency and radiological safety. This study explores the mechanistic origins of deuterium trapping in reduced-activation ferritic–martensitic steels and its correlation to mechanical strengthening. A series of model alloys and engineering steels were fabricated and subjected to different heat treatments to control deuterium trapping site density. Deuterium retention was evaluated using D 2 gas charging and thermal desorption spectroscopy, focusing on the role of grain boundary, dislocation, M 23 C 6 precipitates, and TiC precipitates. Multiscale microstructure characterization and synchrotron X-ray diffraction were performed to characterize microstructure, which was correlated to the deuterium retention property. Results show that TiC precipitates exhibit the highest deuterium trapping capacity, followed by M 23 C 6 precipitates. Dislocation and grain boundary demonstrate the lowest and similar efficiencies. Furthermore, the relationship of trapping quantity and mechanical strengthening of these microstructure features was quantified, demonstrating that TiC precipitates offer highest deuterium trapping per unit of mechanical strengthening.

Retention

On the trapped magnetic moment in type-II superconductors

In this article, measurements of the trapped (remanent) magnetic moment, M trap (H) , when a small magnetic field H is turned off after cooling below the superconducting transition temperature, T c , or ramping a magnetic field up and down after cooling in a zero magnetic field, offer substantial advantages in difficult cases of small samples and large field-dependent backgrounds, which is relevant for hydrogen-based ultra-high-T c superconductors (UHTS). Until recently, there was no need for a separate paper on the trapped magnetic flux for well-known critical-state models due to the simplicity of the physics involved. However, recent publications showed the need for such an analysis. This note summarizes the expectations for the Bean model with constant critical current density and the Kim model with field-dependent critical currents. It is shown that if the trapped moment is fitted to the power law, M trap $\propto$ H a , the fixed exponent α = 2 is exact for the Bean model, while Kim models show a wide interval of possible values, 2$\leqslant$a$\leqslant$4. Furthermore, accounting for reversible magnetization expands the range of possible exponents to 1$\leqslant$a$\leqslant$4. In addition, demagnetizing factors are essential and make the trapped moment orientation dependent even in isotropic materials. As a concrete application, it is shown that flux trapping experiments performed on H 3 S UHTS compounds can be well described using this generalized approach, lending further support to the type-II superconducting nature of H 3 S under ultra-high pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND

All-optical control of charge-trapping defects in rare-earth doped oxides

Abstract Charge-trapping defects in crystalline solids play important roles in applications ranging from microelectronics, optical storage, sensing and quantum technologies. On one hand, depleting trapped charges in the host matrix reduces charge noise and enhances coherence of solid-state quantum emitters. On the other hand, stable charge traps can enable high-density optical storage systems. Here we report all-optical control of charge-trapping defects via optical charge trapping (OCT) spectroscopy of a rare-earth ion doped oxide (Y 2 O 3 ). Charge trapping is realized by low intensity optical excitation in the 200–375 nm range. Charge detrapping or depletion is carried out by optically stimulated luminescence (OSL) under 532 nm stimulation. Using a Pr-doped Y 2 O 3 polycrystalline ceramic host matrix, we observe charging pathways via the inter-band optical absorption of Y 2 O 3 and via the 4f-5d transitions of Pr 3+ . We demonstrate effective control of the density of trapped charges within the Y 2 O 3 matrix at ambient environment. These results point to a viable method for controlling the local charge environment in rare-earth doped crystals via all-optical means, and pave the way for further development of efficient optical storage technologies with ultrahigh storage capacity, as well as for the localized control of quantum coherence in rare-earth doped solids.

França, Leonardo V. S. [Pritzker School of Molecul

Cold Trap Replacement Project Report

This report documents the replacement of the Mechanisms Engineering Test Loop (METL) cold trap. The work involved preparation of the facility to replace the cold trap, removal of the existing welded cold trap from the sodium purification circuit, installation of a new replacement cold trap, completion of associated welds and examinations, restoration of instrumentation and heaters, and controlled return of the cold trap circuit to service. The replacement represented a significant maintenance evolution because the cold trap is an integral welded component of the sodium system. As a result, the work required coordinated control of sodium chemistry, deliberate formation of freeze plugs, inert gas management, precision cutting and welding, and a staged reheating and refill sequence. The activity was executed using procedural controls intended to protect personnel, preserve system cleanliness, and maintain the integrity of the sodium boundary throughout the work. This report provides a narrative summary of the milestone, including the purpose of the work, the pre-job system condition, the major field activities performed, observations made during execution, and the resulting post-work condition of the METL cold trap circuit.

42 ENGINEERING

Sources, losses, and transport of magnetospherically trapped particles.

Trapping, pseudo-trapping, and non-trapping regions within an observed magnetospheric configuration are described. Time averaged proton and electron distributions and available data concerning the alpha particle distribution within the trapping and pseudo-trapping regions are presented. A review of the observational evidence leading to the identification of major sources, losses, and transport of magnetospherically trapped particles is given. Conclusions are summarized and additional suggestions offered on these factors for inner and outer zone protons and electrons. One general result of this review is that much is now known of source, loss, and transport processes, although specific experiments and calculations must still be done. It is shown that the inclusion of pitch angle diffusion processes within the magnetosphere significantly alters the concept of stable trapping and allows a consistent quiescent description of outer zone electrons to be formulated from energies of a few tens of kilovolts to several MeV.

Williams, D. J.

Electron trapping in neutron-irradiated silicon studied by space-charge-limited current.

The trapping and detrapping of electrons is studied through measurements of space-charge-limited current in the temperature range of 77 to 293 K in high-purity silicon after irradiation with 14-MeV neutrons. A model is developed which describes most of the results quantitatively and self-consistently, including dc characteristics. Two distinct trap levels exist: the fast levels lie at 0.14 (plus or minus 0.005) eV below the conduction band, and the slow levels lie at 0.47 (plus or minus 0.01) eV below the conduction band. At 77 K, injected free electrons are initially captured by the fast 0.14-eV traps and then sink into the deep 0.47-eV traps, predominantly without being reemitted into the band. Above approximately 110 K, the detrapping rate from the shallow traps becomes so fast that the deep traps dominate. The results also offer a direct verification of the simple model of space-charge-limited current dominated by shallow and deep traps.

Quat, V. T.