Pd/BEA hydrocarbon traps: Effect of hydrothermal aging on trapping properties and Pd speciation
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Zelinsky, Ryan P.↗
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Results for “TRAPPING”
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Measurement of Trap Length for an Optical Trap
The trap length along the beam axis for an optical trap formed with an upright, oil-immersion microscope was measured. The goals for this effort were twofold. It was deemed useful to understand the depth to which an optical trap can reach for purposes of developing a tool to assist in the fabrication of miniature devices. Additionally, it was desired to know whether the measured trap length favored one or the other of two competing theories to model an optical trap. The approach was to trap a microsphere of known size and mass and raise it from its initial trap position. The microsphere was then dropped by blocking the laser beam for a pre-determined amount of time. Dropping the microsphere in a free-fall mode from various heights relative to the coverslip provides an estimate of how the trapping length changes with depth in water in a sample chamber on a microscope slide. While it was not possible to measure the trap length with sufficient precision to support any particular theory of optical trap formation, it was possible to find regions where the presence of physical boundaries influenced optical traps, and determine that the trap length, for the apparatus studied, is between 6 and 7 m. These results allow more precise control using optical micromanipulation to assemble miniature devices by providing information about the distance over which an optical trap is effective.
Wrbanek, Susan Y.↗
Status of CHIP-TRAP: The Central Michigan University High-Precision Penning Trap
Precise and accurate atomic mass data provide crucial information for applications in a wide range of fields in physics and beyond, including astrophysics, nuclear structure, particle and neutrino physics, fundamental symmetries, chemistry, and metrology. The most precise atomic mass measurements are performed on charged particles confined in a Penning trap. Here, we describe the development, status, and outlook of CHIP-TRAP: the Central Michigan University high-precision Penning trap. CHIP-TRAP aims to perform ultra-high precision (~1 part in 10 11 fractional precision) mass measurements on stable and long-lived isotopes produced with external ion sources and transported to the Penning traps. Along the way, ions of a particular m/q are selected with a multi-reflection time-of-flight mass separator (MR-TOF-MS), with further filtering performed in a cylindrical capture trap before the ions are transported to a pair of hyperbolic measurement traps. In this paper, we report on the design and status of CHIP-TRAP and present results from the commissioning of the ion sources, MR-TOF-MS, and capture trap. We also provide an outlook on the continued development and commissioning of CHIP-TRAP.
73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
Trapping of lithium atoms in a large hollow optical dipole trap
We describe the trapping of lithium atoms in an optical dipole trap about 1 mm in size, with a nearly rectangular potential. The trap has the shape of a cylinder with flat bases. The confinement region is bounded by thin walls produced by light with a frequency blue-detuned from an atomic transition (resonance) frequency by 19 GHz. Before trapping, the gas is collected and cooled in a magneto-optical trap whose centre nearly coincides with the centre of the dipole trap. After switching off the magneto-optical trap, we have photographed the atoms remaining in the dipole trap. (paper)
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Microfabricated Ion Traps on Sapphire for Larger Trap Areas and Higher Qubit Count
Surface ion traps are a promising platform for quantum computing due to their potential to store large numbers of ions that can be addressed by electrical and optical control signals in order to implement quantum algorithms. Increasing the power of the quantum computer requires increasing the number of ions, but this poses a significant challenge in that it leads to a non-linear increase in on-chip power dissipation. The primary contributor to this power scaling in current devices is the capacitance between the radio frequency (RF) electrode and the metal plane that shields the silicon substrate from the RF signals applied to it. Silicon has traditionally been chosen for the substrate material for compatibility with the processing required for multi-metal-level traps. In this work, we address these capacitance and fabrication challenges by replacing the commonly used silicon substrate with an insulating sapphire substrate to fabricate a multi-metal-level ion trap, while still employing common semiconductor manufacturing techniques. This change in substrate allows the design to remove the metal shielding from the device design, reducing the capacitance of the RF electrode. The electrical characteristics of these traps were measured, specifically trap impedance, capacitance, and voltage breakdown, and compared to nearly identical silicon trap devices. Finally, we used laser cutting techniques to shape a sapphire wafer into bowtie shapes matching silicon traps previously fabricated at Sandia National Labs to explore solutions for integrating sapphire substrates into non-rectangular ion trap designs.
97 MATHEMATICS AND COMPUTING↗
Damping Trapped Modes in an in-Vacuum Undulator at a Synchrotron Radiation Light Source
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Tian, K.↗
Characterizing Density and Spatial Distribution of Trap States in Ta 3 N 5 Thin Films for Rational Defect Passivation
Tantalum nitride (Ta 3 N 5 ) has gained significant attention as a potential photoanode material, yet it has been challenged by material quality issues. Defect-induced trap states are detrimental to the performance of any semiconductor material. Beyond influencing the performance of Ta 3 N 5 films, defects can also accelerate the degradation in water during desired electrochemical applications. Defect passivation has provided an enormous boost to the development of many semiconductor materials but is currently in its infancy for Ta 3 N 5 . This is in part due to a lack of experimental understanding regarding the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. Here, we employ drive-level capacitance profiling (DLCP) to experimentally resolve the spatial and energetic distribution of trap states throughout Ta 3 N 5 thin films. The density of deeper energetic traps is found to reach ∼2.5 to 6 × 10 22 cm –3 at the interfaces of neat Ta 3 N 5 thin films, over an order of magnitude greater than the bulk. In addition to the spatial profile of deep trap states, we report neat Ta 3 N 5 thin films to be highly n-type in nature, owning a free carrier density of ∼9.74 × 10 17 cm –3 . This information, coupled with the present understanding of native oxide layers on Ta 3 N 5 , has facilitated the rational design of a targeted passivation strategy that simultaneously provides a means for catalyst immobilization. Loading catalyst via silatrane moieties suppresses the density of defects at the surface of Ta 3 N 5 thin films by two orders of magnitude, while also reducing the free carrier density of films by over one order of magnitude, effectively dedoping the films to ∼2.40 × 10 16 cm –3 . The surface passivation of Ta 3 N 5 films translates to suppressed defect-induced trapping and recombination of photoexcited carriers, as determined through absorption, photoluminescence, and transient photovoltage. Here, this illustrates how developing a deeper understanding of the distribution and influence of defects in Ta 3 N 5 thin films has the potential to guide future works and ultimately accelerate the integration and development of high-performance Ta 3 N 5 thin film devices.
defect passivation↗
Investigation of hot-spots due to trapped flux in niobium superconducting radiofrequency cavities
One of the significant sources of residual losses in superconducting radio-frequency cavities is magnetic flux trapped during the cool-down due to the incomplete Messier effect. If the trapped vortices are non-uniformly distributed on the cavity surface, the temperature mapping revealed the “hotspots” at the location of high density of pinned vortices. Here, we performed a rf test on 1.3 GHz single cell cavity with the combination of the temperature mapping system. The temperature mapping reveled the development of the hot spots with the increase in rf field inside the cavity. When magnetic field is trapped locally on the surface of cavity, the hot-spots strength increase rapidly, showing the direct correlation of vortex induced hot spot and corresponding rf loss.
Accelerator Physics↗
Three-dimensional optical trapping and orientation of microparticles for coherent X-ray diffraction imaging
Optical trapping has been implemented in many areas of physics and biology as a noncontact sample manipulation technique to study the structure and dynamics of nano-andmesoscale objects. It provides a unique approach for manipulating microscopic objects without inducing undesired changes in structure. Combining optical trapping with hard X-ray microscopy techniques, such as coherent diffraction imaging and crystallography, provides a nonperturbing environment where electronic and structural dynamics of an individual particle in solution can be followed in situ. It was previously shown that optical trapping allows the manipulation of micrometer-sized objects for Xray fluorescence imaging. However, questions remain over the ability of optical trapping to position objects for X-ray diffraction measurements, which have stringent requirements for angular stability. Our work demonstrates that dynamic holographic optical tweezers are capable of manipulating single micrometer-scale anisotropic particles in a microfluidic environment with the precision and stability required for X-ray Bragg diffraction experiments-thus functioning as an "optical goniometer." The methodology can be extended to a variety of X-ray experiments and the Bragg coherent diffractive imaging of individual particles in solution, as demonstrated here, will be markedly enhanced with the advent of brighter, coherent X-ray sources.
Gao, Yuan↗
Defect-Mediated Charge-Carrier Trapping and Nonradiative Recombination in WSe 2 Monolayers
Nonradiative charge-carrier recombination in transition-metal dichalcogenide (TMD) monolayers severely limits their use in solar energy conversion technologies. Because defects serve as recombination sites, developing a quantitative description of charge-carrier dynamics in defective TMD monolayers can shed light on recombination mechanisms. Herein we report a first-principles investigation of charge-carrier dynamics in pristine and defective WSe 2 monolayers with three of the most probable defects, namely, Se vacancies, W vacancies, and SeW antisites. We predict that Se vacancies slow down recombination by nearly an order of magnitude relative to defect-free samples by breaking the monolayer’s symmetry and thereby reducing the spectral intensity of the A 1g phonon mode that promotes recombination in the pristine monolayer. By contrast, we find W vacancies accelerate recombination by more than an order of magnitude, with half of the recombination events bypassing charge traps. The subsequent dynamics feature both charge trapping and charge-trap-assisted recombination. Although SeW antisites also slightly accelerate recombination, the predicted mechanism is different from the W vacancy case. First, a shallow energy level traps a photoexcited electron. Then, both shallow- and deep-trap-assisted recombination can occur simultaneously. Accelerated recombination arises for W vacancies and SeW antisites because they introduce new phonon modes that strongly couple to electron and hole dynamics. This work thus provides a detailed understanding of the mechanisms behind charge-carrier recombination in WSe 2 monolayers with distinct defects. Furthermore, materials engineering, particularly to avoid W vacancies, could advance this technology. The insights derived are important for future design of high-performance photoactive devices based on WSe 2 monolayers.
14 SOLAR ENERGY↗
Modeling of Impact Ionization and Charge Trapping in SuperCDMS HVeV Detectors
A model for charge trapping and impact ionization, and an experiment to measure these parameters is presented for the SuperCDMS HVeV detector. A procedure to isolate and quantify the main sources of noise (bulk and surface charge leakage) in the measurements is also describe. This sets the stage to precisely measure the charge trapping and impact ionization probabilities in order to incorporate this model into future dark matter searches.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Strong Electron–Phonon Coupling and Self-Trapped Excitons in the Defect Halide Perovskites A 3 M 2 I 9 (A = Cs, Rb; M = Bi, Sb)
The optical and electronic properties of Bridgman grown single crystals of the wide-bandgap semiconducting defect halide perovskites A3M2I9 (A = Cs, Rb; M = Bi, Sb) have been investigated. Intense Raman scattering was observed at room temperature for each compound, indicating high polarizability and strong electron–phonon coupling. Both low-temperature and room-temperature photoluminescence (PL) were measured for each compound. Cs3Sb2I9 and Rb3Sb2I9 have broad PL emission bands between 1.75 and 2.05 eV with peaks at 1.96 and 1.92 eV, respectively. The Cs3Bi2I9 PL spectra showed broad emission consisting of several overlapping bands in the 1.65–2.2 eV range. Evidence of strong electron–phonon coupling comparable to that of the alkali halides was observed in phonon broadening of the PL emission. Effective phonon energies obtained from temperature-dependent PL measurements were in agreement with the Raman peak energies. A model is proposed whereby electron–phonon interactions in Cs3Sb2I9, Rb3Sb2I9, and Cs3Bi2I9 induce small polarons, resulting in trapping of excitons by the lattice. The recombination of these self-trapped excitons is responsible for the broad PL emission. Rb3Bi2I9, Rb3Sb2I9, and Cs3Bi2I9 exhibit high resistivity and photoconductivity response under laser photoexcitation, indicating that these compounds possess potential as semiconductor hard radiation detector materials.
36 MATERIALS SCIENCE↗
Implementation of Precursor and Neutral Loss Scans on a Miniature Ion Trap Mass Spectrometer and Performance Comparison to a Benchtop Linear Ion Trap
Implementation of orthogonal double resonance precursor and neutral loss scans on the Mini 12 miniature rectilinear ion trap mass spectrometer is described, and performance is compared to that of a commercial Thermo linear trap quadropole (LTQ) linear ion trap. The ac frequency scan version of the technique at constant rf voltage is used here because it is operationally much simpler to implement. Remarkably, the Mini 12 shows up to two orders of magnitude higher sensitivity compared to that of the LTQ. Resolution on the LTQ is better than unit at scan speeds of ~ 400 Th/s, whereas peak widths on the Mini 12, on average, range from 0.5 to 2.0 Th full width at half maximum and depend heavily on the precursor ion Mathieu q parameter as well as the pump down time that precedes the mass scan. Both sensitivity and resolution are maximized under higher pressure conditions (short pump down time) on the Mini 12. The effective mass range of the product ion ejection waveform was found to be 5.8 Th on the Mini 12 in the precursor ion scan mode vs. that of 3.9 Th on the LTQ. In the neutral loss scan mode, the product ion selectivity was between 8 and 11 Th on the Mini 12 and between 7 and 8 Th on the LTQ. The effects of nonlinear resonance lines on the Mini 12 were also explored. .
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Trapping and detection of single rubidium atoms in an optical dipole trap using a long-focus objective lens
The trapping of single atoms in optical dipole traps is widely used in experiments on the implementation of quantum processors based on neutral atoms, and studying interatomic interactions. Typically, such experiments employ lenses with a large numerical aperture (NA > 0.5), highly sensitive EMCCD cameras, or photon counters. In this work, we demonstrate trapping and detection of single rubidium atoms using a long-focus objective lens with a numerical aperture NA = 0.172 and a FLir Tau CNV sCMOS camera. (paper)
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Broadening of the drumhead-mode spectrum due to in-plane thermal fluctuations of two-dimensional trapped ion crystals in a Penning trap
Two-dimensional crystals of ions stored in Penning traps are a leading platform for quantum simulation and sensing experiments. For small amplitudes, the out-of-plane motion of such crystals can be described by a discrete set of normal modes called the drumhead modes, which can be used to implement a range of quantum information protocols. However, experimental observations of crystals with Doppler-cooled and even nearground- state-cooled drumhead modes reveal an unresolved drumhead-mode spectrum. In this work, we establish in-plane thermal fluctuations in ion positions as a major contributor to the broadening of the drumhead-mode spectrum. In the process, we demonstrate how the confining magnetic field leads to unconventional in-plane normal modes, whose average potential and kinetic energies are not equal. This property, in turn, has implications for the sampling procedure required to choose the in-plane initial conditions for molecular-dynamics simulations. Further, for current operating conditions of the NIST Penning trap, our study suggests that the two-dimensional crystals produced in this trap undergo in-plane potential-energy fluctuations of the order of 10mK. Our study therefore motivates the need for designing improved techniques to cool the in-plane degrees of freedom.
70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
Efficient Band-to-Trap Tunneling Model Including Heterojunction Band Offset
In this paper, we present an efficient band-to-trap tunneling model based on the Schenk approach, in which an analytic density-of-states (DOS) model is developed based on the open boundary scattering method. The new model explicitly includes the effect of heterojunction band offset, in addition to the well-known field effect. Its analytic form enables straightforward implementation into TCAD device simulators. It is applicable to all one-dimensional potentials, which can be approximated to a good degree such that the approximated potentials lead to piecewise analytic wave functions with open boundary conditions. The model allows for simulating both the electric-field-enhanced and band-offset-enhanced carrier recombination due to the band-to-trap tunneling near the heterojunction in a heterojunction bipolar transistor (HBT). Simulation results of an InGaP/GaAs/GaAs NPN HBT show that the proposed model predicts significantly increased base currents, due to the hole-to-trap tunneling enhanced by the emitter-base junction band offset. Finally, the results compare favorably with experimental observation.
42 ENGINEERING↗
A new quasi-thermal trap model for solar flare hard X-ray bursts - An electrostatic trap model
A new quasi-thermal trap model of solar flare hard X-ray bursts is presented. The new model utilizes the trapping ability of a magnetic mirror and a magnetic field-aligned electrostatic potential produced by differences in anisotropies of the electron and ion distribution function. It is demonstrated that this potential can, together with the magnetic mirror itself, effectively confine electrons in a trap, thereby enhancing their bremsstrahlung yield per electron. This analysis makes even more untenable models involving precipitation of the bremsstrahlung-producing electrons onto a cold target.
Spicer, D. S.↗