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35 records · Page 2

Dual interfacial H-bonding-enhanced deep-blue hybrid copper–iodide LEDs

Solution-processed light-emitting diodes based on non-toxic copper–iodide hybrids are a compelling solution for efficient and stable deep-blue lighting, owing to their tunability, high photoluminescence efficiency and environmental sustainability. Here we present a hybrid copper–iodide that shows near-unity photoluminescence quantum yield (99.6%) with an emission wavelength of 449 nm and colour coordinates (0.147, 0.087), alongside its emission mechanism and charge transport characteristics. Here, we use the thin film of this hybrid as the sole active emissive layer to fabricate deep-blue light-emitting diodes and subsequently enhance the device performance through a dual interfacial hydrogen-bond passivation strategy. This synergetic surface modification approach, integrating a hydrogen-bond-acceptor self-assembled monolayer with an ultrathin polymethyl methacrylate capping layer, effectively passivates both heterojunctions of the copper–iodide hybrid emissive layer and optimizes charge injections. We achieve a maximum external quantum efficiency of 12.57%, a maximum luminance of 3,970.30 cd m −2 with colour coordinates (0.147, 0.091) and an excellent operational stability (half-lifetime) of 204 hours under ambient conditions. We further showcase a large-area device of 4 cm 2 that maintains high efficiency. Our findings reveal the potential of copper–iodide-based hybrid materials for applications in solid-state lighting and display technologies, offering a versatile strategy for enhancing device performances.

14 SOLAR ENERGY↗

Light extraction in tandem organic light emitting diodes

Since the invention of organic light emitting diodes (OLEDs), great research efforts have been dedicated to improving their efficiency and lifetime. For high-brightness applications, tandem OLED structures have advantages because of the lower current densities required to achieve high brightness. With the successful development of highly efficient charge generation layers, high brightness tandem OLEDs are used in displays and lighting. However, the major challenge for tandem OLEDs is the low light extraction efficiency, because about 50% of the light is trapped inside the device as waveguide modes. In this Perspective, we first review the recent works done on light extraction, analyze different waveguide mode extraction structures, and then identify the key factors determining the extraction efficiencies in tandem OLEDs.

42 ENGINEERING↗

Ce:YAG/A12O3 composites for laser-excited solid-state white lighting

A method for fabricating a composite useful in a white light emitting device, includes mixing a phosphor and a filler to form a mixture; sintering the mixture (e.g., using spark plasma sintering) to form a composite; and annealing the composite to reduce oxygen vacancies and improve optical properties of the composite. Also disclosed is a white light emitting device including a laser diode or light emitting diode optically pumping the phosphor in the composite to produce white light. The composite fabricated using the method (and having. e.g., at most 50% phosphor by weight) can (1) reduce an operating temperature of the phosphor by 55 degrees, (2) increase an external quantum efficiency (e.g., by at least 15%) of the white light emitting device, and (3) result in color points and quality of the white light that is equal to or improved, as compared to without the filler.

Cozzan, Clayton J.↗

High Temperature Optocoupler for 3D High Density Power Modules

The goal of this proposed research is to develop a reliable high-temperature optocouplers, which can operate at 250°C with at least ten-year lifetime, and replace isolation transforms as the galvanic isolation solution for the 3D integration of high density power modules. The electrification of future transportations (i.e., electric vehicles) will continuously drive the demand for high density power modules. Optocouplers (i.e., packaged light emitter and detector) as a promising candidate to replace bulky isolation transformers are highly desirable to facilitate the continuous scale-down of gate driver circuitry that will lead to 3D high density power modules and achieve disruptive performance in terms of thermal management, power density, power efficiency, reliability and operating environments. However, regular semiconductor optoelectronic materials and devices have significant difficulty functioning in the harsh environments designated for high density power module usage (such as operation at high temperatures). Ultimately, it is not the intrinsic properties of power devices that prevent their use at higher temperatures, but rather the low voltage electronics needed to drive them and the packaging that surrounds them. The typical operating temperature for optocouplers is only up to 100°C, due to the limitations of light emitting diode (LED) devices inside and packaging materials. A systematic characterization methodology will be developed to analyze the performance, lifetime and reliability of LED devices and distinguish multiple failure mechanisms at high temperatures. An original methodology of “design for reliability” will be developed to design the optoelectronic devices with high reliability and long lifetime at high temperatures. A new architecture of high temperature high reliable optocouplers will be developed, fabricated and demonstrated with continuous operating at 250°C. The development of efficient, reliable high density 3D power modules is the foundation for energy efficiency and energy reliability. Enabled with advanced 3D integration and packaging technologies, high density power module solutions can achieve much more superior performance over the conventional discrete solutions in terms of efficiency, thermal management and power density. The proposed concept of high temperature optocouplers as the galvanic isolation solution for high density power modules will bring together interdisciplinary research involving the wide bandgap materials, optoelectronics, high reliable device design, electronics packaging and power modules. A streamline of skilled personnel would be trained including graduate and undergraduate students, local engineers and scientists which are in great demand to both academia and optoelectronics industry. The proposed research topics, such as, solid state lighting and high temperature device reliability, are currently of major interest at the Department of Energy, in particular, Sandia National Laboratories. This project can enhance collaborations between the University of Arkansas (UA) and Sandia National Laboratories. The findings of the proposed research are expected to be integrated into high density 3-D power modules at the Engineering Research Center for Power Optimization for Electro-Thermal Systems (POETS).

42 ENGINEERING↗

Luminescent MOFs (LMOFs): recent advancement towards a greener WLED technology

The replacement of traditional incandescent, halogen and fluorescent lamps by white light emitting diodes (WLEDs) is expected to reduce the global electricity consumption by one-third by 2030, according to the US Department of Energy. The current WLED technology uses rare-earth element (REE) based phosphor materials, which, not only is cost-intensive but also constitutes an environmental concern. Hence, researchers are in a quest for a new-generation of opto-electronic materials that can replace the conventional phosphors in WLEDs and thus aim towards a cleaner and more energy efficient lighting technology for the future. Luminescent metal–organic frameworks (LMOFs) have recently emerged as a new sub-class of MOFs which have demonstrated enormous potential for applications in sensing, imaging, optoelectronics and in solid-state lighting (SSL) technology. LMOFs could be game changers as lighting phosphors due to advantages such as high luminescence quantum yield, tunable excitation and emission which can be achieved by rational design and optimization of metal centers, linkers, and the guest molecules, facile fabrication into devices, and structural robustness. These clear advantageous features of LMOFs make them score over other contemporary materials, and enable them to be futuristic phosphor materials for WLED technology. Here, in this feature article, we will provide an overview of the most recent developments of LMOF-based phosphor materials for SSL with a special focus on WLED technology. The emphasis will be centered around REE-free LMOFs, as the aim is to direct the attention of the readers towards a more viable and greener lighting technology.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Plasmon-enhanced ultralow-threshold solid-state triplet fusion upconversion

Triplet fusion upconversion has potential applications in solar cells, photoredox catalysis, additive manufacturing and bioimaging. However, solid-state upconversion systems have struggled to measure up to their solution-phase counterparts, often requiring enormous optical power densities to operate at the maximum efficiency. Here we substantially improve the performance of upconversion films through excitation with surface plasmons that propagate along a planar silver-film interface, leading to an absorption enhancement that reduces the intensity threshold I th by a factor of 19 and enhances the external quantum efficiency by a factor of 17. From this, we achieve I th values as low as 3.4 mW cm −2 and an external quantum efficiency up to 0.094%. To demonstrate real-world viability, we couple the upconversion film to plasmons generated by the near-field of excitons in an organic light-emitting diode. As a result, this scheme is then used to fabricate a white-emitting organic light-emitting diode where blue emission sources from plasmon-excited upconversion, achieving a high colour rendering index of 86.2 and setting precedent for blue emission in the absence of high-energy polarons or triplets.

36 MATERIALS SCIENCE↗

High aspect ratio organic light-emitting diodes

Reliability is particularly challenging for organic light-emitting diodes (OLEDs) used in solid-state lighting applications, because OLED lifetime is inversely proportional to luminance, and most lighting applications demand high luminance. Here we introduce a strategy to overcome this tradeoff by constructing OLEDs on a substrate with sub-mm, high aspect ratio surface texture. By creating more active OLED area per unit lighting panel area, the device current density required to generate a given panel luminance decreases. We validate this approach for fluorescent and phosphorescent OLEDs, demonstrating good thickness uniformity on corrugated substrates with area enhancement factors up to 1.4x using a standard thermal evaporator. Relative to planar controls at the same panel current density, the high aspect ratio devices achieve a 2.7-fold increase in operating lifetime and up to a 40% increase in external light extraction efficiency, indicating that this approach offers a powerful pathway to improve the efficiency and lifetime of OLED lighting.

OLED↗

High Aspect Ratio OLEDs

Long-term reliability is especially challenging for organic light emitting diodes (OLEDs) used in solid-state lighting applications because OLED lifetime is inversely proportional to luminance, and most lighting applications demand high luminance. This project explored a new strategy to overcome this tradeoff by constructing OLEDs on a substrate with sub-mm, high aspect ratio surface texture. By creating more active OLED area per unit lighting panel area, the device current density required to generate a given panel luminance decreases. We validated this approach for both fluorescent and phosphorescent OLEDs, demonstrating good thickness uniformity on corrugated substrates with area enhancement factors up to 1.4x using a standard thermal evaporator. Relative to planar controls at the same panel current density, the high aspect ratio devices achieve a 2.7-fold increase in operating lifetime and up to a 40% increase in external light extraction efficiency. Experiments carried out on a pilot-line OLED manufacturing system demonstrated good coating uniformity, indicating that this approach has the potential to be implemented at scale and therefore offers a powerful pathway to improve the efficiency and lifetime of OLED lighting.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Lighting the Way for Quicker, Safer Healing

Who's to say that a little light can t go a long way? Tiny light-emitting diode (LED) chips used to grow plants in space are lighting the way for cancer treatment, wound healing, and chronic pain alleviation on Earth. In 1993, Quantum Devices, Inc. (QDI), of Barneveld, Wisconsin, began developing the HEALS (High Emissivity Aluminiferous Light-emitting Substrate) technology to provide high-intensity, solid-state LED lighting systems for NASA Space Shuttle plant growth experiments. The company evolved out of cooperative efforts with the Wisconsin Center for Space Automation and Robotics (WCSAR) at the University of Wisconsin-Madison a NASA center for the Commercial Development of Space. Ronald W. Ignatius, QDI s president and chairman, represented one of WCSAR s industrial partners at the time. WCSAR was conducting research on light sources for promoting food growth within closed environments where humans would be present for a long duration, such as the Space Shuttle and the International Space Station. With the support of WCSAR, Ignatius experimented with LEDs, which provide high-energy efficiency and virtually no heat, despite releasing waves of light 10 times brighter than the Sun. Ignatius admits that some scientists involved in the project were skeptical at first, thinking that the idea of using LEDs to promote plant growth was far-fetched. The experiments, however, demonstrated that red LED wavelengths could boost the energy metabolism of cells to advance plant growth and photosynthesis. This finding prompted Ignatius to develop a line of LED products that emit the exact wavelength of light that plants use in photosynthesis. Our company gives credit to Dr. Ray Bula, the director of WCSAR, for having the foresight to go against the prevailing dogma of the time and design the first plant experiment using monochromatic light to grow lettuce plants, Ignatius proclaims. In 1989, Ignatius formed QDI to bring the salt grain-sized LEDs to market, and in October 1995, the light sources made their Space Shuttle flight debut on the second U.S. Microgravity Laboratory Spacelab mission (STS-73, Columbia)

Source record↗

Plasmon Mediated Near–Field Energy Transfer From Solid–State, Electrically Injected Excitons to Solution Phase Chromophores

An organic diode is demonstrated that near-field energy transfers to molecules in solution via surface plasmon polaritons, in contrast to typical far-field excitation via absorption of traveling photons. Electrically generated excitons couple to surface plasmon modes in the cathode; the plasmons subsequently excite chromophore molecules on top of the cathode. External quantum efficiency and time resolved photoluminescence measurements are used to characterize the diode and the near-field energy transfer process. In addition, it is shown that excited chromophores can charge-transfer to quencher molecules, illustrating the potential of this device to be used for photochemical applications.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Cost Estimates of Roll-to-Roll Production of Organic Light Emitting Devices for Lighting

White organic light emitting devices (WOLEDs) offerdistinct advantages as solid state lighting sources, including high energy efficiency, superior color quality,and a flexible, thin profile that can accommodate a vast array of possible fixture designs. Recent advances in device lifetime and high speed deposition suggest that mass production of WOLED panels is approaching an inflection point. To understand the tradeoffs in the volume manufacturing of WOLED lighting panels, in this work, we estimate the cost of white WOLED panel production based on vacuum and vapor phase deposition in a roll-to-roll production line envisioned to yield an annual capacity of at least 6 × 10 6 m 2 . Assuming a WOLED operating luminance at 10 klm/m 2 , we anticipate a $\$12.5$ /klm cost of a WOLED light engine that includes the cost of the current driverand packaging. With incremental reduction in material and driver costs and improved luminance, the costof WOLED lighting can be reduced to $\$6.3$ /klm in thenear term, potentially positioning WOLEDs for use innumerous premium lighting applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to ~50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at ~50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths ~10-200 (mu)s and with repetition rates of ~10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Eegholm, Niels↗

Evaluation of light emitting diode characteristics for a space-based plant irradiation source

Light emitting diodes (LEDs) are a promising irradiation source for plant growth in space. Improved semiconductor technology has yielded LED devices fabricated with gallium aluminum arsenide (GaAlAs) chips which have a high efficiency for converting electrical energy to photosynthetically active radiation. Specific GaAlAs LEDs are available that emit radiation with a peak wavelength near the spectral peak of maximum quantum action for photosynthesis. The electrical conversion efficiency of installed systems (μmol s -1 of photosynthetic photons per watt) of high output LEDs can be within 10% of that for high pressure sodium lamps. Output of individual LEDs were found to vary by as much as 55 % from the average of the lot. LED ratings, in mcd (luminous intensity per solid angle), were found to be proportional to total photon output only for devices with the same dispersion angle and spectral peak. Increasing current through the LED increased output but also increased temperature with a consequent decrease in electrical conversion efficiency. A photosynthetic photon flux as high as 900 μmol m -2 s -1 has been produced on surfaces using arrays with LEDs mounted 7.6 mm apart, operating at a current of 50 mA device -1 and at an installed density of approximately 17,200 lamps m -2 of irradiated area. Advantages of LEDs over other electric light sources for use in space systems include long life, minimal mass and volume and being a solid state device.

D J Barta↗

A New Type of Hybrid Copper Iodide as Nontoxic and Ultrastable LED Emissive Layer Material

Perovskite-based light-emitting diodes (PeLEDs) are promising candidates for next-generation solid-state lighting and display technologies. However, all current high-performance PeLEDs contain a toxic element (lead) and suffer from relatively low stability. Herein, we report a new type of lead-free LED using low-cost, eco-friendly, and robust copper(I) iodide hybrid material as the emissive layer (EML). Specifically, they are composed of copper iodide chains and organic ligands through ionic and coordinate bonds. Their remarkable stability and solution processability stem from this unique multifold bonding feature. High-quality thin films of 1D-Cu 4 I 6 (bttmp) 2 were fabricated by a simple, one-step spin-coating process. They exhibit high photoluminescence quantum yield (91%) and long-term air stability (>2000 h). An EQE of 5.02% was achieved for a prototype yellow LED using 1D-Cu 4 I 6 (bttmp) 2 EML. Its half-lifetime of 35.5 h obtained in open air outperforms that of most PeLEDs reported to date. Finally, this work opens a new direction for making LEDs based on ecofriendly and robust hybrid materials.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

From lab to lamp: Understanding downconverter degradation in LED packages

Downconverters, primarily inorganic phosphors, are critical components in white solid-state LED-based lighting and liquid crystal display backlights. Research efforts have led to a fundamental understanding of a downconverter's absorption, photoluminescence, and efficiency as a function of composition, structure, and processing conditions. However, considerably less work has focused on the reliability of phosphors once they are incorporated into LED packages. Solving these issues is often the final step before the commercialization of new materials, but the significant resources and time required to evaluate and mitigate materials failure are rarely discussed in the literature. In this Perspective, we discuss the need for conducting downconverter reliability testing and the potential of accelerating, screening, and understanding downconverter failure modes. Our focus highlights the mechanisms of failure and discusses how this influences materials selection and the design of different LED packages. We also stress the potential for accelerated reliability testing protocols and note the potential role first-principles calculations and data-driven models could play in establishing the compositional-processing trends for different aspects of downconverter reliability. In conclusion, we close with possible research directions that could improve downconverter reliability and emphasize the importance of assessing a material's (chemical) stability where multiple manufacturing and processing steps can dictate system performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Quantitative analysis of leakage current in III-nitride micro-light-emitting diodes

In this study, the electrical characteristics under forward- and reverse-bias conditions of III-nitride blue and green micro-light-emitting diodes (μLEDs) are analyzed. A fitting model is proposed to determine the contributions of reverse leakage current and the effectiveness of sidewall treatments. Moreover, the forward-bias currents of the μLEDs are examined using the extracted ideality factor to examine the impacts of sidewall defects. The results show that sidewall treatments are highly effective for suppression of leakage currents. From the efficiency perspective, higher wall-plug efficiency (WPE) than external quantum efficiency (EQE) is observed when the operating voltage is lower than the photon voltage in both blue and green 20 × 20 μm 2 devices. This enhancement of the WPE over the EQE is due to the suppression of Shockley–Read–Hall (SRH) nonradiative recombination. These observations indicate that μLEDs with sidewall treatments not only improve optical performance but also further enhance the electrical performance of devices by suppressing the leakage current paths due to SRH nonradiative recombination processes.

42 ENGINEERING↗

High Efficiency InGaN LEDs Emitting in Green, Amber and Beyond (Final Report)

This project focuses on developing high efficiency light emitting diodes (LEDs) with green, amber, and longer wavelengths using two compatible material systems based on III-nitride and II-IV-nitride semiconductor heterostructures. The proposed approach uses low-indium-content InGaN and ZnGeN 2 or ZnSnN 2 heterostructure quantum wells (QWs) as the active regions for high efficiency green and amber LEDs, and therefore to advance high efficiency color-mixed white LED technology. This approach takes advantage of the increased flexibility, afforded by the incorporation of the II-IV-nitrides into the III-nitride layers, to tune the QW active region to lower the emission wavelengths and to increase the electron-hole wave function overlap. This strategy paves a new way to extend the InGaN QW LED emission wavelength without using high-indium-content InGaN. An industrially preferable metalorganic chemical vapor deposition (MOCVD) method was used to develop the growth of ZnGeN 2 and ZnSnN 2 that are compatible with the InGaN growth. The unique dual chamber MOCVD instrument at OSU was used in this project. This program created an opportunity for the two institutions (The Ohio State University and Case Western Reserve University) with complementary expertise to perform this work. Two graduate students (Md Rezaul Karim (OSU) and Benthara Hewage Dinushi Jayatunga (CWRU)) gained experience in MOCVD growth and various characterization methods including scanning electron microscopy, x-ray diffraction spectroscopy, x-ray photoemission spectroscopy, Hall measurements, cathodoluminescence and photoluminescence. Both students successfully defended their PhD dissertations in April/May 2021. Both Karim and Jayatunga have joined Intel as engineers in June/July 2021. Another two graduate students Kaitian Zhang (OSU) and Chenxi Hu (CWRU) joined the project team since spring 2021 to continue on this project. They were trained on MOCVD epitaxy of InGaN QWs and materials characterization including SEM, AFM, PL, CL, XRD, Hall measurements and electroluminescence. A third student, Vijay Gopal Thirupakuzi Vangipuram (OSU), who joined the group in fall 2021 to perform LED fabrication and characterization. The key research accomplishments of the project include: (1) Successful development of MOCVD epitaxy of single crystalline ZnGeN 2 and ZnSnN 2 . MOCVD growth parameters that determine the stoichiometry of ZnGeN 2 and ZnSnN 2 films were identified. (2) Experimentally determined the band offsets between GaN/ZnGeN 2 and GaN/ZnGaSnN 2 hetero-interfaces, which agree very well with the theoretical predictions. (3) Demonstrated the incorporation of thin ZnGeN 2 layer in InGaN QWs. Proof-of-concept of the InGaN-ZnGeN 2 QW design demonstrated as much as 80 nm of red shift without increasing In composition or QW thickness. (4) InGaN/ZnGeN 2 QWs emitting at 480 nm achieved IQE of 47%. Resulted from this project, 7 journal articles were published, and 9 conference papers were presented.

36 MATERIALS SCIENCE↗