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Results for “Solid State Lighting, Efficiency, Light Emitting Diode”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records

Surface Ligand Effects on Energetics, Charge Transfer, and Stability at Interfaces Between Metal Halide Perovskites and Organic Semiconductors

Chemistry at organic-inorganic interfaces plays a major role in determining the performance of electronic and optoelectronic devices. Understanding, developing, and using surface chemistry is thus essential for creating improved and novel materials and devices. Organic metal halide perovskites (HPs) are inexpensive semiconductors that can be printed from solution to make efficient photovoltaic cells for harvesting solar energy, light emitting diodes for energy efficient solid-state lighting applications, solid-state lasers, and even spin selective devices with applications to quantum computing. To realize the potential of HPs, their surface chemistry and interfacial properties must be better understood and appropriately adjusted to meet the needs of the targeted application. For example, surface chemistry influences non-radiative recombination, which influences the efficiency of light emission and solar energy conversion, charge-carrier injection and extraction from optoelectronic devices, and material and device stability. This research project centered around determining how the surface chemistry of HP thin films and nanoparticles influences optical properties, charge transfer processes, energetics, and stability. In this project we characterized ligand binding strengths to HPs; determined how surface ligand chemistry influences photoluminescence properties, energetics, and charge transfer processes; determined that surface ligands often penetrate into HPs and uncovered methods of reducing surface ligand penetration through structural modifications; and discovered how interfacial energetics impact charge transfer processes and photovoltaic performance parameters. Overall, this research established important insights into how surface ligands interact with HPs to influence their optical properties, electronic properties, stability, and device level performance.

14 SOLAR ENERGY↗

Efficient green and yellow light-emitting diodes (LEDs) for solid-state lighting applications

In this project, Lumileds, the University of Michigan, the University of New Mexico, Sandia National Laboratories, and Ohio State University conducted a collaborative and comprehensive research effort to investigate the most promising approaches to improve green and yellow InGaN LEDs. Advanced LED characterization methods and predictive model calculations were applied to design optimization experiments more effectively and accelerate the pace of improvements.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Demonstration of p-side down green light emitting diodes with high external quantum efficiencies

GaN/(In,Ga)N heterostructure based visible Light Emitting Diodes (LED) have enabled a wide range of solid-state lighting applications through excellent efficiency and power output in the shorter wavelengths (≤ 475nm) of violet/blue emission. However, the efficiency of emitters in the longer wavelength range (≥ 500nm) drops drastically due to the need to include higher Indium-content in the InGaN quantum wells. Large average polarization fields for high Indium-content quantum wells for conventional P-up structure, opposes the depletion field leading to large electrostatic barriers for both electrons and holes injection. LEDs fabricated along the N-polar direction with a p-up orientation or Ga-polar direction with p-down orientation lower such electrostatic barriers to carrier injection due to alignment of the polarization dipole field and depletion region field. This can therefore theoretically improve the electrical injection efficiency and reduce the forward voltage of operation. Such a Ga-polar p-down LED requires a bottom buried tunnel junction to avoid current spreading issues for a buried p-GaN layer. In this report, we demonstrate for the first time Ga-polar p-down green emitting LEDs using bottom tunnel junctions and having external quantum efficiencies comparable to those of equivalent p-up LEDs grown by Metal Organic Chemical Vapor Deposition (MOCVD).

36 MATERIALS SCIENCE↗

Highly Efficient Pure‐Blue Light‐Emitting Diodes Based on Rubidium and Chlorine Alloyed Metal Halide Perovskite

Abstract Perovskite light‐emitting diodes (PeLEDs) are promising candidates for display and solid‐state lighting, due to their tunable colors, high conversion efficiencies, and low cost. However, the performance of blue PeLEDs is far inferior to that of the near‐infrared, red, and green counterparts. Here, the fabrication of pure‐blue PeLEDs with an emission peak at 475 nm, a peak external quantum efficiency of 10.1%, and a maximum luminance of 14 000 cd m −2 is demonstrated by tailoring the compositions of perovskites. The pure‐blue electroluminescence is achieved by simultaneous addition of rubidium and chlorine ions into CsPbBr 3 and incorporation of phenylethylammonium chloride forms quasi‐2D hybrid perovskites. The combination of these composition engineering results in blueshifted emissions without reducing the quantum yield. The judicious alloying is shown to be critical to result in the better morphology with suppressed current leakage and enhanced light outcoupling.

Yang, Yang↗

Solid-State Lighting Using Side-by-Side White Phosphorescent Organic Light-Emitting Diodes

White organic light-emitting diodes (WOLEDs) have become increasingly popular for use in solid-state illumination, where diffuse, large area light sources that achieve a high color rendering index and luminous power efficiency are desirable. Color-tunable emission, where the light source combines emission from multiple, separately addressed color elements, is conveniently provided by WOLEDs for the purpose of adapting the lighting source to a particular illumination requirement. In this work, we demonstrate a method for side-by-side positioning of monochromatic blue and yellow phosphorescent OLED stripes that are combined to create tunable white light, using a high resolution mechanical peel-off patterning method. We achieve a peak luminous power efficiency of 17.1 ± 0.3 lm W –1 and an external quantum efficiency of 11.8 ± 0.2% and demonstrate color tunability of the 1960 Commission Internationale d’Eclairage chromaticity coordinates from (u,v) = (0.33,0.36) to (0.12,0.32). This corresponds to a tuning rnge of the color rendering index from 74 ± 1 to 86 ± 1 and the correlated color temperature from 2000 to 8000 ± 500 K. Here, due to the nondestructive nature of the peel-off technique, patterned devices exhibit a lifetime comparable to conventional, shadow mask-patterned devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Improved Light Extraction in Organic Light‐Emitting Diodes via Semiconductor Dilution

Increasing the internal light extraction efficiency of organic light‐emitting diodes (OLEDs) is key to improving their performance for solid‐state lighting applications; however, it is challenging to do this in a way that is compatible with high volume manufacturing. Here, it is shown that the outcoupling efficiency of OLEDs can be improved by diluting their hole transport layer (HTL) with the low refractive index material trifluoropropyl oligomeric silsesquioxane (F‐POSS). Specifically, co‐evaporating 40 vol.% F‐POSS in the HTL of single and multi‐stack phosphorescent OLEDs decreases its refractive index by Δ n ≈ 0.2, which in turn yields a ≈12% increase in their outcoupling efficiency with no impact on electrical performance or operational lifetime. This result is significant because F‐POSS is a small molecule that sublimes cleanly, does not aggregate, and is compatible with state‐of‐the‐art HTL materials, making it a realistic path to increase light extraction in commercial OLEDs manufactured on existing production lines.

36 MATERIALS SCIENCE↗

Roadmap on perovskite light-emitting diodes

Abstract In recent years, the field of metal-halide perovskite emitters has rapidly emerged as a new community in solid-state lighting. Their exceptional optoelectronic properties have contributed to the rapid rise in external quantum efficiencies (EQEs) in perovskite light-emitting diodes (PeLEDs) from <1% (in 2014) to over 30% (in 2023) across a wide range of wavelengths. However, several challenges still hinder their commercialization, including the relatively low EQEs of blue/white devices, limited EQEs in large-area devices, poor device stability, as well as the toxicity of the easily accessible lead components and the solvents used in the synthesis and processing of PeLEDs. This roadmap addresses the current and future challenges in PeLEDs across fundamental and applied research areas, by sharing the community’s perspectives. This work will provide the field with practical guidelines to advance PeLED development and facilitate more rapid commercialization.

14 SOLAR ENERGY↗

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN light-emitting diodes (LEDs) are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. In this work, we measure the carrier dynamics of a variety of InGaN/GaN LEDs using small-signal electroluminescence methods [1]. A rate equation approach and associated small-signal circuit are used to model carrier injection, recombination in the active region, recombination in the cladding regions, and carrier escape. The model is fit to the measured optical frequency response (S21) and input impedance (S11) of the LEDs to extract the various carrier lifetimes, the carrier density, and the radiative and non-radiative recombination rates. We specifically study planar nonpolar and semipolar LEDs, which show record-high modulation speeds for III-nitride LEDs and present the modulation characteristics of core-shell nanowire-based LEDs. The planar nonpolar m-plane ($101\bar{0}$) micro-LEDs achieve a record-high -3dB modulation bandwidth for a III-nitride LED of 1.5 GHz [2]. The -3dB response of an electrically injected nanowire-based micro-LED with nonpolar facets is also reported, showing a -3dB bandwidth of 1.2 GHz [3]. The high speed is attributed to the shorter carrier lifetime associated with the nonpolar orientation. We also study the carrier dynamics in semipolar ($20\bar{2}\bar{1}$) LEDs for various temperatures [4]. Finally, we present carrier dynamics measurements on commercial-grade c-plane epitaxy for various active region designs, including a wavelength series and a growth quality series. The wavelength series offers insight into the contributions of the quantum confined Stark effect (QCSE) and InGaN material quality on the green gap [5]. The growth quality series investigates the role of non-radiative centers on the LED performance. Extraction of the carrier dynamics using small-signal electroluminescence offers insight into the factors limiting the efficiency and high-speed performance of III-nitride emitters and can be leveraged to ultimately improve the devices.

LEDs, InGaN, electroluminescence, bandwidth, modul↗

Volumetric carrier injection in InGaN quantum well light emitting diodes

InGaN/GaN quantum well (QW) light emitting diodes (LEDs) are essential components of solid-state lighting and displays. However, the efficiency of long wavelength (green to red) devices is inferior to that of blue LEDs. To a large degree, this occurs because the equilibration of injected holes between multiple QWs of the active region is hindered by GaN quantum confinement and polarization barriers. This drawback could be overcome by volumetric hole injection into all QWs through semipolar QWs present on the facets of V-defects that form at threading dislocations in polar GaN-based structures. In this work, we have tested the viability of this injection mechanism and studied its properties by time-resolved and near-field spectroscopy techniques. Here, we have found that indeed the hole injection via the V-defects does take place, the mechanism is fast, and the hole spread from the V-defect is substantial, making this type of injection feasible for efficient long wavelength GaN LEDs.

InGaN/GaN quantum wells↗

Reduction of efficiency droop in c -plane InGaN/GaN light-emitting diodes using a thick single quantum well with doped barriers

We report on c-plane InGaN/GaN single quantum well (QW) light-emitting diodes (LEDs) of different well widths (3 or 9 nm) with and without doped barriers. QW barriers were doped with the aim of reducing the internal electric field (F QW ) in the QW to increase the electron-hole overlap, therefore increasing the recombination rates and resulting in the reduction of the efficiency droop. We, indeed, observed, through biased photocurrent spectroscopy, a reduction in F QW with doped barriers, with F QW being in the same direction of the p-n junction field at zero bias as opposed to the junction field for LEDs without doped barriers. Even with the improvement in the ground state wavefunction overlap, the ground state transition rate remains low for thick QWs. Transitions through excited states were observed for both thick QW LEDs with and without doped barriers. Here, the thick QW LED without doped barriers displayed low external quantum efficiency (EQE), likely as a result of the carrier overflow due to the poor confinement of carriers in the excited states. On the other hand, for LEDs with doped barriers, the flatter band in the QW resulting from the lower F QW reduces the energy separation between the eigenstates, leading to better confinement of carriers in the excited states. With doped barriers, we demonstrated a low efficiency droop 9-nm-thick single QW LED with a peak EQE of 42% at 40 A/cm 2 and an EQE of 36% at 400 A/cm 2 .

42 ENGINEERING↗

Solid State Light Evaluation in the U.S. Lab Mockup

This document constitutes the publication of work performed by the Space Human Factors Laboratory (mail code SF5 at the time) at the Johnson Space Center (JSC) in the months of June and July of 2000. At that time, the Space Human Factors Laboratory was part of the Space Human Factors Branch in the Flight Projects Division of the Space and Life Directorate. This report was originally to be a document for internal consumption only at JSC as it was seen to be only preliminary work for the further development of solid state illumination for general lighting on future space vehicles and the International Space Station (ISS). Due to funding constraints, immediate follow-on efforts were delayed and the need for publication of this document was overcome by other events. However, in recent years and with the development and deployment of a solid state light luminaire prototype on ISS, the time was overdue for publishing this information for general distribution and reference. Solid state lights (SSLs) are being developed to potentially replace the general luminaire assemblies (GLAs) currently in service in the International Space Station (ISS) and included in designs of modules for the ISS. The SSLs consist of arrays of light emitting diodes (LEDs), small solid state electronic devices that produce visible light in proportion to the electrical current flowing through them. Recent progressive advances in electrical power-to-light conversion efficiency in LED technology have allowed the consideration of LEDs as replacements for incandescent and fluorescent light sources in many circumstances, and their inherent advantages in ruggedness, reliability, and life expectancy make them attractive for applications in spacecraft. One potential area of application for the SSLs in the U.S. Laboratory Module of the ISS. This study addresses the suitability of the SSLs as replacements for the GLAs in this application.

Maida, James c.↗

Solid-State Spectral Light Source System

A solid-state light source combines an array of light-emitting diodes (LEDs) with advanced electronic control and stabilization over both the spectrum and overall level of the light output. The use of LEDs provides efficient operation over a wide range of wavelengths and power levels, while electronic control permits extremely stable output and dynamic control over the output. In this innovation, LEDs are used instead of incandescent bulbs. Optical feedback and digital control are used to monitor and regulate the output of each LED. Because individual LEDs generate light within narrower ranges of wavelengths than incandescent bulbs, multiple LEDs are combined to provide a broad, continuous spectrum, or to produce light within discrete wavebands that are suitable for specific radiometric sensors.

Maffione, Robert↗

Environmentally Robust Quantum Dot Down Converters for Highly Efficient Solid State Lighting

This project contributes fundamental understanding of the chemical synthesis of cadmium free quantum dots (QDs) designed for solid state lighting (SSL). Methods to incorporate gallium into quantum dot architectures were explored, which led to more stable and brighter solid state lighting devices. These findings will help advance the incorporation of quantum dots in highly energy efficient lighting devices with a warm color spectrum. Such Cd-free lighting devices can greatly accelerate the adoption of high efficiency, warm spectrum lighting in buildings. The project targeted InP/GaP/ZnS colloidal quantum dots that more effectively absorb the blue light produced by light emitting diode packages and emit monochromatic red light with near perfect efficiency. While significant improvements in the QD absorptivity were demonstrated, the absorbance increase achieved was 3x rather than the targeted 10x increase. Similarly, the luminescence from these QDs achieved about half of the target photoluminescence quantum yield (PLQY) and twice the desired spectral width, a measure of the color purity of their luminescence. While the target characteristics and some of the year 2/2 milestones were not met, the new QD architectures did lead to greater stability on SSL packages, a sign of the long term promise of the technology.

36 MATERIALS SCIENCE↗

Evaluation of the Reliability of Passive Infrared (PIR) Occupancy Sensors for Residential Indoor Lighting

Solid-state lighting (SSL) technologies have penetrated the general illumination market in recent years, largely replacing conventional technologies such as incandescent and fluorescent lighting. Most of the initial excitement about light-emitting diode (LED) sources for SSL devices focused on their energy savings potential resulting from vast improvements in source efficiency and luminous efficacy compared with conventional illumination products. More recently, the focus has shifted toward other aspects of lighting application efficiency, namely intensity effectiveness and spectral efficiency, because of the ease of controlling both the light intensity of LEDs with drive voltage and the color properties of the LED-based illuminators. To capitalize on the energy savings of increased intensity effectiveness and spectral efficiency, a lighting control system (LCS) is often used. While the current penetration of LCSs is relatively modest, it is anticipated that lighting controls (i.e., connected lighting, controls and LED and conventional lighting) could have an installed penetration as higher as 46% by the year 2035, saving an additional 1.3 quads of energy. Despite the large energy savings that can be gained from using LCSs, standard test methods for evaluating sensors employed in LCSs and reliability data of the LCSs and their components are generally lacking. The National Electrical Manufacturers Association (NEMA) developed the only standard, NEMA WD 7-2011 (R2016), to test occupancy and motion sensor performance (herein referred to as “the NEMA protocol”). In a previous U.S. Department of Energy (DOE) effort, some concerns of the NEMA protocol were identified (e.g., strict height and weight limits on test subjects, large amounts of manual effort, sometimes inconsistent repeatability). During the current work, a consistent detection length test (DLT) and a Robotic Sensor Evaluation System (RoboSES) were developed to alleviate some of these concerns. RoboSES acts as a human surrogate by using thermal pads on a mannequin and a remote-controlled mobile base to test a sensor’s field of view (FOV). This report builds on the earlier DOE efforts to understand sensor technologies used in LCSs for general illumination. Specifically, this report describes the optimization of RoboSES, characterizes and establishes test methods to assess the reliability of multiple passive infrared (PIR) sensors, and reports the findings of robustness and reliability testing on two commercial PIR sensors intended for residential applications. The information presented in this report is gained from up to 4,000 hours (hrs) of accelerated stress tests (ASTs).

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Green Light Emitting Diodes for the Ultimate Solid-state Lighting

Light-emitting diodes (LEDs), in particular InGaN-based LED devices, have achieved remarkable success in solid-state lighting, contributing to 25% of energy savings already. However, more than two thirds of the electricity is still lost as heat in current white LEDs today. Furthermore, expected population growth and increasing demand for lighting necessitate a more efficient approach, which can only be realized by solving the issue of the green gap (i.e., the inefficiency of the state-of-the-art green LEDs). This green gap is a fundamentally limiting issue in conventional hexagonal nitride LEDs, leading to 19% wall-plug efficiency (WPE) at 100 A/cm 2 , while the department of energy goal is 30% (in 2025) and 55% (in 2035).

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Light Source

Research on food growth for long duration spacecraft has resulted in a light source for growing plants indoors known as Qbeam, a solid state light source consisting of a control unit and lamp. The light source, manufactured by Quantum Devices, Inc., is not very hot, although it generates high intensity radiation. When Ron Ignatius, an industrial partner of WCSAR, realized that terrestrial plant research lighting was not energy efficient enough for space use, he and WCSAR began to experiment with light emitting diodes. A line of LED products was developed, and QDI was formed to market the technology. An LED-based cancer treatment device is currently under development.

Source record↗

Thermodynamic Limit for Excitonic Light-Emitting Diodes

Here, we derive the thermodynamic limit for organic light-emitting diodes (OLEDs), and show that strong exciton binding in these devices requires a higher voltage to achieve the same luminance as a comparable inorganic LED. The OLED overpotential, which does not reduce the power conversion efficiency, is minimized by having a small exciton binding energy, a long exciton lifetime, and a large Langevin coefficient for electron-hole recombination. Based on these results, it seems likely that the best phosphorescent and thermally activated delayed fluorescence OLEDs reported to date approach their thermodynamic limit. The framework developed here is broadly applicable to other excitonic materials, and should therefore help guide the development of low voltage LEDs for display and solid-state lighting applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗