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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS2022

An Assessment of SNPP and NOAA20 VIIRS RSB Calibration Performance in NASA SIPS Reprocessed Collection-2 L1B Data Products

Two VIIRS sensors onboard the SNPP and NOAA20 satellites have been successfully operating for over 10 and 4 years, respectively, providing the worldwide user community with high-quality imagery and radiometric measurements of the land, atmosphere, cryosphere, and oceans. This study provides a temporal radiometric stability and calibration consistency assessment of the SNPP and NOAA20 VIIRS reflective solar bands using the latest NASA SIPS C2 L1B products. Several independent vicarious approaches are used to examine the stability of SNPP VIIRS and consistency of the at-sensor reflectance between the two VIIRS instruments. These approaches include observations from simultaneous nadir overpasses, the Libya-4 desert and Dome C snow/ice sites, and deep convective clouds. The impact of existing band spectral differences on the reflectance measurements is accounted for utilizing scene-specific hyperspectral observations provided by the SCIAMACHY sensor onboard the ENVISAT platform. Results indicate that both SNPP and NOAA20 VIIRS reflectances are stable within 1% over their mission periods for all bands, except for a few bands in the visible range from SNPP VIIRS that show more upward drifts at high radiances. NOAA20 VIIRS reflectances are systematically lower than SNPP by 2 to 4% for most bands, with the exception of few short wavelength bands where it is seen to be up to 7%.

VIIRS↗
DOE OSTI2020

Materials Data on SiP by Materials Project

PSi crystallizes in the orthorhombic Cmc2_1 space group. The structure is two-dimensional and consists of two PSi sheets oriented in the (0, 0, 1) direction. there are six inequivalent Si4- sites. In the first Si4- site, Si4- is bonded to one Si4- and three P4+ atoms to form corner-sharing SiSiP3 tetrahedra. The Si–Si bond length is 2.36 Å. There are two shorter (2.29 Å) and one longer (2.31 Å) Si–P bond lengths. In the second Si4- site, Si4- is bonded to one Si4- and three P4+ atoms to form corner-sharing SiSiP3 tetrahedra. There are two shorter (2.29 Å) and one longer (2.31 Å) Si–P bond lengths. In the third Si4- site, Si4- is bonded to one Si4- and three P4+ atoms to form distorted corner-sharing SiSiP3 tetrahedra. The Si–Si bond length is 2.35 Å. There are one shorter (2.27 Å) and two longer (2.28 Å) Si–P bond lengths. In the fourth Si4- site, Si4- is bonded to one Si4- and three P4+ atoms to form distorted corner-sharing SiSiP3 tetrahedra. There are one shorter (2.27 Å) and two longer (2.28 Å) Si–P bond lengths. In the fifth Si4- site, Si4- is bonded to one Si4- and three P4+ atoms to form distorted corner-sharing SiSiP3 tetrahedra. The Si–Si bond length is 2.35 Å. There are one shorter (2.27 Å) and two longer (2.28 Å) Si–P bond lengths. In the sixth Si4- site, Si4- is bonded to one Si4- and three P4+ atoms to form distorted corner-sharing SiSiP3 tetrahedra. There are one shorter (2.27 Å) and two longer (2.28 Å) Si–P bond lengths. There are six inequivalent P4+ sites. In the first P4+ site, P4+ is bonded in a distorted T-shaped geometry to three Si4- atoms. In the second P4+ site, P4+ is bonded in a distorted T-shaped geometry to three Si4- atoms. In the third P4+ site, P4+ is bonded in a distorted T-shaped geometry to three Si4- atoms. In the fourth P4+ site, P4+ is bonded in a distorted T-shaped geometry to three Si4- atoms. In the fifth P4+ site, P4+ is bonded in a distorted T-shaped geometry to three Si4- atoms. In the sixth P4+ site, P4+ is bonded in a distorted T-shaped geometry to three Si4- atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Co(SiP)3 by Materials Project

CoSi3P3 crystallizes in the monoclinic P2_1 space group. The structure is three-dimensional. there are two inequivalent Co3+ sites. In the first Co3+ site, Co3+ is bonded in a 3-coordinate geometry to three Si4- atoms. There are a spread of Co–Si bond distances ranging from 2.21–2.36 Å. In the second Co3+ site, Co3+ is bonded in a 3-coordinate geometry to three Si4- atoms. All Co–Si bond lengths are 2.25 Å. There are six inequivalent Si4- sites. In the first Si4- site, Si4- is bonded to one Co3+ and three P3+ atoms to form distorted corner-sharing SiCoP3 tetrahedra. There are a spread of Si–P bond distances ranging from 2.31–2.36 Å. In the second Si4- site, Si4- is bonded to one Co3+ and three P3+ atoms to form distorted corner-sharing SiCoP3 tetrahedra. There are one shorter (2.28 Å) and two longer (2.33 Å) Si–P bond lengths. In the third Si4- site, Si4- is bonded in a 4-coordinate geometry to two equivalent Co3+ and two P3+ atoms. There are one shorter (2.29 Å) and one longer (2.40 Å) Si–P bond lengths. In the fourth Si4- site, Si4- is bonded to one Co3+ and three P3+ atoms to form distorted corner-sharing SiCoP3 tetrahedra. There are a spread of Si–P bond distances ranging from 2.27–2.34 Å. In the fifth Si4- site, Si4- is bonded to four P3+ atoms to form corner-sharing SiP4 tetrahedra. There are a spread of Si–P bond distances ranging from 2.25–2.29 Å. In the sixth Si4- site, Si4- is bonded in a distorted rectangular see-saw-like geometry to one Co3+ and three P3+ atoms. There are one shorter (2.28 Å) and two longer (2.33 Å) Si–P bond lengths. There are six inequivalent P3+ sites. In the first P3+ site, P3+ is bonded in a trigonal non-coplanar geometry to three Si4- atoms. In the second P3+ site, P3+ is bonded to four Si4- atoms to form corner-sharing PSi4 tetrahedra. In the third P3+ site, P3+ is bonded in a distorted trigonal non-coplanar geometry to three Si4- atoms. In the fourth P3+ site, P3+ is bonded in a distorted trigonal non-coplanar geometry to three Si4- atoms. In the fifth P3+ site, P3+ is bonded in a distorted trigonal non-coplanar geometry to three Si4- atoms. In the sixth P3+ site, P3+ is bonded in an L-shaped geometry to two Si4- atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on SiP by Materials Project

PSi is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Si4- is bonded to four equivalent P4+ atoms to form corner-sharing SiP4 tetrahedra. All Si–P bond lengths are 2.31 Å. P4+ is bonded to four equivalent Si4- atoms to form corner-sharing PSi4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Fe(SiP)4 by Materials Project

FeSi4P4 crystallizes in the triclinic P1 space group. The structure is three-dimensional. Fe3+ is bonded in a 3-coordinate geometry to three Si4- atoms. There are a spread of Fe–Si bond distances ranging from 2.26–2.28 Å. There are four inequivalent Si4- sites. In the first Si4- site, Si4- is bonded to one Fe3+ and three P+3.25+ atoms to form distorted SiFeP3 tetrahedra that share corners with three equivalent SiP4 tetrahedra and corners with three equivalent SiFeP3 trigonal pyramids. There are two shorter (2.32 Å) and one longer (2.33 Å) Si–P bond lengths. In the second Si4- site, Si4- is bonded to four P+3.25+ atoms to form corner-sharing SiP4 tetrahedra. There are one shorter (2.23 Å) and three longer (2.26 Å) Si–P bond lengths. In the third Si4- site, Si4- is bonded in a distorted rectangular see-saw-like geometry to one Fe3+ and three P+3.25+ atoms. There are one shorter (2.31 Å) and two longer (2.32 Å) Si–P bond lengths. In the fourth Si4- site, Si4- is bonded to one Fe3+ and three P+3.25+ atoms to form distorted corner-sharing SiFeP3 trigonal pyramids. There are one shorter (2.28 Å) and two longer (2.33 Å) Si–P bond lengths. There are four inequivalent P+3.25+ sites. In the first P+3.25+ site, P+3.25+ is bonded in a distorted T-shaped geometry to three Si4- atoms. In the second P+3.25+ site, P+3.25+ is bonded in a distorted trigonal non-coplanar geometry to three Si4- atoms. In the third P+3.25+ site, P+3.25+ is bonded in a tetrahedral geometry to four Si4- atoms. In the fourth P+3.25+ site, P+3.25+ is bonded in a trigonal non-coplanar geometry to three Si4- atoms.

36 MATERIALS SCIENCE↗
NASA NTRS2002

An interfaces approach to TES ground data system processing design with the Science Investigator-led Processing System (SIPS)

Developing production-quality software to process the large volumes of scientific data is the responsibility of the TES Ground Data System, which is being developed at the Jet Propulsion Laboratory together with support contractor Raytheon/ITSS. The large data volume and processing requirements of the TES pose significant challenges to the design.

TES TES SIPS↗
DOE OSTI2026

Development and Validation of Low-Cost, High-Reflectance Composite CSP Facets: SIPS Final Report

This work investigates the various challenges associated with developing heliostat structural composite facets using 1 mm glass mirrors. Such facets are desirable for Concentrating Solar Power because 1 mm glass mirrors provide an absolute increase in reflectivity of 2-3 % over the industry standard of 4 mm glass mirrors. Prototypes of paraboloid composite facets with 1 mm glass mirrors were constructed that have a root mean square slope error on the order of 2 mrad while achieving greater than 96% reflectivity. These facets were constructed using a low-quality aluminum mold and a bill of materials that show potential to achieve cost parity with existing 4 mm glass mirrors supported by structural steel. The facets produced were able to survive up to 50 mm hail ball impacts and were robust against accelerated environmental cycling designed to expose durability concerns. Further work is needed to develop a scalable and cost-effective manufacturing process with a similar bill of materials.

14 SOLAR ENERGY↗
DOE OSTI2026

Testing and Validation of Wireless Communication Architecture for Heliostat Fields: SIPS Final Report

This work focuses on the development and testing of a low-cost wireless communication system for heliostat fields, enabling significant capital costs reductions for concentrating solar thermal systems. Outputs of this work include a working demonstration of a multi-node communication system, clear reporting of system performance, and technical documentation of system development and architecture for reproducibility. Through this process, an open-source repository was created for manufacturing hardware at ~$30/heliostat. The system includes software for cybersecurity, achieving sub-second communication latencies and derisking of hardware for eventual scale-up to tens of thousands of heliostats. While the system is not currently off-the-shelf ready, there is now a clearly defined pathway for scaling up and completing the commercial development process.

14 SOLAR ENERGY↗