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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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26 records · Page 2
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

High-voltage solar-cell chip

Integrated circuit technology has been successfully applied to the design and fabrication of 0.5 x 0.5-cm planar multijunction solar-cell chips. Each of these solar cells consisted of six voltage-generating unit cells monolithically connected in series and fabricated on a 75-micron-thick, p-type, single crystal, silicon substrate. A contact photolithic process employing five photomask levels together with a standard microelectronics batch-processing technique were used to construct the solar-cell chip. The open-circuit voltage increased rapidly with increasing illumination up to 5 AM1 suns where it began to saturate at the sum of the individual unit-cell voltages at a maximum of 3.0 V. A short-circuit current density per unit cell of 240 mA/sq cm was observed at 10 AM1 suns.

Kapoor, V. J.↗
NASA NTRS1993

Low cost paths to binary optics

Application of binary optics has been limited to a few major laboratories because of the limited availability of fabrication facilities such as e-beam machines and the lack of standardized design software. Foster-Miller has attempted to identify low cost approaches to medium-resolution binary optics using readily available computer and fabrication tools, primarily for the use of students and experimenters in optical computing. An early version of our system, MacBEEP, made use of an optimized laser film recorder from the commercial typesetting industry with 10 micron resolution. This report is an update on our current efforts to design and build a second generation MacBEEP, which aims at 1 micron resolution and multiple phase levels. Trails included a low cost scanning electron microscope in microlithography mode, and alternative laser inscribers or photomask generators. Our current software approach is based on Mathematica and PostScript compatibility.

Nelson, Arthur↗
NASA NTRS2009

Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture (approximately equal to 3x3cm) without any crack propagation; implementation of IR transmission blocking techniques; and compatibility with indium bump bonding. Although designed for the microshutter arrays for the NIRSpec instrument on the James Webb Space Telescope, these substrates can be linked to microshutter applications in the photomask generation and stepper equipment used to make ICs and microelectromechanical system (MEMS) devices.

Jhabvala, Murzy↗
NASA NTRS2009

Improving the Visible and Infrared Contrast Ratio of Microshutter Arrays

Three device improvements have been developed that dramatically enhance the contrast ratio of microshutters. The goal of a microshutter is to allow as much light through as possible when the shutters are in the open configuration, and preventing any light from passing through when they are in the closed position. The ratio of the transmitted light that is blocked is defined here as the contrast ratio. Three major components contribute to the improved performance of these microshutters: 1. The precise implementation of light shields, which protect the gap around the shutters so no light can leak through. It has been ascertained that without the light shield there would be a gap on the order of 1 percent of the shutter area, limiting the contrast to a maximum of 100. 2. The precise coating of the interior wall of each microshutter was improved with an insulator and metal using an angle deposition technique. The coating prevents any infrared light that finds an entrance on the surface of the microshutter cell from being emitted from a sidewall. Since silicon is in effect transparent to any light with a wavelength longer than .1 micrometer, these coatings are essential to blocking any stray signals when the shutters are closed. 3. A thin film of molybdenum nitride (MoN) was integrated onto the surface of the microshutter blade. This film provides the majority of light blockage over the microshutter and also ensures that the shutter can be operated over a wide temperature range by maintaining its flatness. These improvements were motivated by the requirements dictated by the James Webb Space Telescope NIRSpec instrument. The science goals of the NIRSpec require observing some of the very faintest objects in a given field of view that also may contain some very bright objects. To observe the faint objects, the light from the bright objects - which could be thousands of times brighter - must be completely blocked. If a closed microshutter is even slightly transmissive, a very bright object will still transmit a small signal, which can be larger than a signal from a very faint object transmitted through an open shutter. Since this situation can completely corrupt the results, it was necessary that the closed shutters be able to attenuate light by at least a factor of 2,000. There currently exist four flight-quality microshutter arrays that have been fully or are currently undergoing testing and the results support that the three improvements described above have successfully led to contrast levels greater than 50,000 in over 99 percent of the microshutters at an operating temperature of 35 K. Applications for these high-contrast microshutters are in the photomask generation and stepper equipment used to make integrated circuits and microelectromechanical (MEMS) devices. Since microshutters are a reconfigurable optical element, their versatility in these industries provides an improvement over printed masks and fixed projection alignment systems.

Jhabvala, Murzy↗
NASA NTRS2006

Catalytic-Metal/PdO(sub x)/SiC Schottky-Diode Gas Sensors

Miniaturized hydrogen- and hydrocarbon-gas sensors, heretofore often consisting of Schottky diodes based on catalytic metal in contact with SiC, can be improved by incorporating palladium oxide (PdOx, where 0 less than or equal to x less than or equal to 1) between the catalytic metal and the SiC. In prior such sensors in which the catalytic metal was the alloy PdCr, diffusion and the consequent formation of oxides and silicides of Pd and Cr during operation at high temperature were observed to cause loss of sensitivity. However, it was also observed that any PdOx layers that formed and remained at PdCr/SiC interfaces acted as barriers to diffusion, preventing further deterioration by preventing the subsequent formation of metal silicides. In the present improvement, the lesson learned from these observations is applied by placing PdOx at the catalytic metal/SiC interfaces in a controlled and uniform manner to form stable diffusion barriers that prevent formation of metal silicides. A major advantage of PdOx over other candidate diffusion-barrier materials is that PdOx is a highly stable oxide that can be incorporated into gas sensor structures by use of deposition techniques that are standard in the semiconductor industry. The PdOx layer can be used in a gas sensor structure for improved sensor stability, while maintaining sensitivity. For example, in proof-of-concept experiments, Pt/PdOx/SiC Schottky-diode gas sensors were fabricated and tested. The fabrication process included controlled sputter deposition of PdOx to a thickness of 50 Angstroms on a 400-m-thick SiC substrate, followed by deposition of Pt to a thickness of 450 Angstroms on the PdOx. The SiC substrate (400 microns in thickness) was patterned with photoresist and a Schottky-diode photomask. A lift-off process completed the definition of the Schottky-diode pattern. The sensors were tested by measuring changes in forward currents at a bias potential of 1 V during exposure to H2 in N2 at temperatures ranging from 450 to 600 C for more than 750 hours. The sensors were found to be stable after a break-in time of nearly 200 hours. The sensors exhibited high sensitivity: sensor currents changed by factors ranging from 300 to 800 when the gas was changed from pure N2 to 0.5 percent H2 in N2.

Hunter, Gary W.↗
NASA NTRS2011

Programmable Aperture with MEMS Microshutter Arrays

A microshutter array (MSA) has been developed for use as an aperture array for multi-object selections in James Webb Space Telescope (JWST) technology. Light shields, molybdenum nitride (MoN) coating on shutters, and aluminum/aluminum oxide coatings on interior walls are put on each shutter for light leak prevention, and to enhance optical contrast. Individual shutters are patterned with a torsion flexure that permits shutters to open 90 deg. with a minimized mechanical stress concentration. The shutters are actuated magnetically, latched, and addressed electrostatically. Also, micromechanical features are tailored onto individual shutters to prevent stiction. An individual shutter consists of a torsion hinge, a shutter blade, a front electrode that is coated on the shutter blade, a backside electrode that is coated on the interior walls, and a magnetic cobalt-iron coating. The magnetic coating is patterned into stripes on microshutters so that shutters can respond to an external magnetic field for the magnetic actuation. A set of column electrodes is placed on top of shutters, and a set of row electrodes on sidewalls is underneath the shutters so that they can be electrostatically latched open. A linear permanent magnet is aligned with the shutter rows and is positioned above a flipped upside-down array, and sweeps across the array in a direction parallel to shutter columns. As the magnet sweeps across the array, sequential rows of shutters are rotated from their natural horizontal orientation to a vertical open position, where they approach vertical electrodes on the sidewalls. When the electrodes are biased with a sufficient electrostatic force to overcome the mechanical restoring force of torsion bars, shutters remain latched to vertical electrodes in their open state. When the bias is removed, or is insufficient, the shutters return to their horizontal, closed positions. To release a shutter, both the electrode on the shutter and the one on the back wall where the shutter sits are grounded. The shutters with one or both ungrounded electrodes are held open. Sub-micron bumps underneath light shields and silicon ribs on back walls are the two features to prevent stiction. These features ensure that the microshutter array functions properly in mechanical motions. The MSA technology can be used primarily in multi-object imaging and spectroscopy, photomask generation, light switches, and in the stepper equipment used to make integrated circuits and MEMS (microelectromechanical systems) devices.

Moseley, Samuel↗
NASA NTRS2014

Methods and Devices for Micro-Isolation, Extraction, and/or Analysis of Microscale Components

Provided herein are devices and methods for the micro-isolation of biological cellular material. A micro-isolation apparatus described can comprise a photomask that protects regions of interest against DNA-destroying illumination. The micro-isolation apparatus can further comprise photosensitive material defining access wells following illumination and subsequent developing of the photosensitive material. The micro-isolation apparatus can further comprise a chambered microfluidic device comprising channels providing access to wells defined in photosensitive material. The micro-isolation apparatus can comprise a chambered microfluidic device without access wells defined in photosensitive material where valves control the flow of gases or liquids through the channels of the microfluidic device. Also included are methods for selectively isolating cellular material using the apparatuses described herein, as are methods for biochemical analysis of individual regions of interest of cellular material using the devices described herein. Further included are methods of making masking arrays useful for the methods described herein.

Kartalov, Emil P.↗
DOE OSTI2026

Binary pseudo-random array standard for extreme ultraviolet lithography tool characterization

Extreme ultraviolet (EUV) imaging tools play a crucial role in EUV lithography. Achieving high accuracy in EUV metrology is essential for advanced semiconductor manufacturing. A thorough characterization of the instrumentation in use is required. Binary pseudo-random arrays (BPRAs) are an established standard for calibrating and characterizing optical instruments in the frequency domain. Here, we expand the BPRA standard to applications in EUV imaging. To extend the technology to the EUV spectral range, a high-resolution BPRA target with the smallest feature size of 40 nm is developed. The EUV BPRA target establishes an in situ and portable calibration and alignment standard for EUV imaging. The target is patterned by means of electron-beam lithography, using a nickel absorber with a thickness of 39 nm. The substrate is a 4″ silicon wafer with a molybdenum/silicon multilayer coating. To demonstrate the efficacy of the target and develop the instrument calibration protocol, the target is imaged on the Sharp Hyper-NA Actinic Reticle Review Project EUV mask microscope. Power spectral density (PSD) data are presented. The characteristics of the imaging system are imprinted on the PSD. The modulation transfer function is extracted from the PSD data. A partially coherent imaging model is used as a reference to the experimental results.

BPRA↗