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At least 37 records · Page 2
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Sixteen multiple-amplifier sensing charge-coupled devices and characterization techniques targeting the next generation of astronomical instruments

We present a candidate sensor for future spectroscopic applications, such as a Stage-5 Spectroscopic Survey Experiment or the Habitable Worlds Observatory. This type of charge-coupled device (CCD) sensor features multiple in-line amplifiers at its output stage allowing multiple measurements of the same charge packet, either in each amplifier or in the different amplifiers. Recently, the operation of an eight-amplifier sensor has been experimentally demonstrated, and we present the operation of a 16-amplifier sensor. This new sensor enables a noise level of ∼1 erms− with a single sample per amplifier. In addition, it is shown that sub-electron noise can be achieved using multiple samples per amplifier. In addition to demonstrating the performance of the 16-amplifier sensor, we aim to create a framework for future analysis and performance optimization of this type of detectors. New models and techniques are presented to characterize specific parameters, which are absent in conventional CCDs and Skipper CCDs: charge transfer between amplifiers and independent and common noise in the amplifiers and their processing.

16 multiple-amplifer sensing CCD (MAS-CCD)↗
DOE OSTI2021

On the merit of hot ion mode for tearing mode stabilization

The stabilization of tearing modes with rf driven current benefits from the cooperative feedback loop between rf power deposition and electron temperature within the island. This effect, termed rf current condensation, can greatly enhance and localize the current driven within magnetic islands. It has previously been shown that the condensation effect opens the possibility of passive stabilization with broad rf profiles, as would be typical of LHCD for steady state operation. Here, we show that this self-healing effect can be dramatically amplified by operation in a hot ion mode, due to the additional electron heat source provided by the hotter ions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Flux-pumped impedance-engineered broadband Josephson parametric amplifier

Broadband quantum-limited amplifiers play a critical role in the single-shot readout of superconducting qubits, but a popular implementation, the traveling wave parametric amplifier, involves a complex design and fabrication process. Here, we present a simple design for a Josephson parametric amplifier, using a lumped element resonator comprising a superconducting quantum interference device whose useful bandwidth is enhanced with an on-chip impedance-matching circuit. Additionally, we demonstrate a flux-coupling geometry that maximizes the coupling to the Josepson loop and minimizes spurious excitation of the amplifier resonant circuit. The amplifier, which operates in a flux-pumped mode, is demonstrated with a power gain of more than 20dB over a bandwidth of about 300MHz, where approximate noise measurements indicate quantum-limited pehrformance. A procedure is given for optimizing the bandwidth for this kind of amplifier, using a linearized circuit simulation while minimizing non-linearities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

A 10-Gb/s Driver/Receiver ASIC and Optical Modules for Particle Physics Experiments

We present the design and test results of a Drivers and Limiting AmplifierS ASIC operating at 10 Gbps (DLAS10) and three Miniature Optical Transmitter/Receiver/Transceiver modules (MTx+, MRx+, and MTRx+) based on DLAS10. DLAS10 can drive two Transmitter Optical Sub-Assemblies (TOSAs) of Vertical Cavity Surface Emitting Lasers (VCSELs), receive the signals from two Receiver Optical Sub-Assemblies (ROSAs) that have no embedded limiting amplifiers, or drive a VCSEL TOSA and receive the signal from a ROSA, respectively. Each channel of DLAS10 consists of an input Continuous Time Linear Equalizer (CTLE), a four-stage limiting amplifier (LA), and an output driver. The LA amplifies the signals of variable levels to a stable swing. The output driver drives VCSELs or impedance-controlled traces. DLAS10 is fabricated in a 65 nm CMOS technology. The die is 1 mm x 1 mm. DLAS10 is packaged in a 4 mm x 4 mm 24-pin quad-flat no-leads (QFN) package. DLAS10 has been tested in MTx+, MRx+, and MTRx+ modules. Both measured optical and electrical eye diagrams pass the 10 Gbps eye mask test. Furthermore, the input electrical sensitivity is 40 mVp-p, while the input optical sensitivity is -12 dBm. The total jitter of MRx+ is 29 ps (P-P) with a random jitter of 1.6 ps (RMS) and a deterministic jitter of 9.9 ps. Each MTx+/MTRx+ module consumes 82 mW/ch and 174 mW/ch, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

Noise limits for dc SQUID readout of high- Q resonators below 300 MHz

We present the limits on noise for the readout of cryogenic high-Q resonators using dc Superconducting Quantum Interference Devices (SQUIDs) below 300 MHz. This analysis uses realized first-stage SQUIDs (previously published), whose performance is well described by Tesche–Clarke (TC) theory, coupled directly to the resonators. We also present data from a prototype second-stage dc SQUID array designed to couple to this first-stage SQUID as a follow-on amplifier with high system bandwidth. This analysis is the first full consideration of dc SQUID noise performance referred to a high-Q resonator over this frequency range and is presented relative to the standard quantum limit. We include imprecision, backaction, and backaction–imprecision noise correlations from TC theory, the noise contributed by the second-stage SQUIDs, wiring, and preamplifiers, and optimizations for both on-resonance measurements and off-resonance scan sensitivity. This architecture has modern relevance due to the increased interest in axion searches and the requirements of the DMRadio-m 3 axion search, which uses dc SQUIDs in this frequency range.

Bosons↗
DOE OSTI2022

High resolution atomic force microscopy with an active piezoelectric microcantilever

Active microcantilevers with on-chip sensing and actuation provide significant advantages in tapping mode Atomic Force Microscopy (AFM). Collocated transduction allows for effective manipulation of cantilever dynamics through feedback control, enabling higher scan rates. However, the adjacency of the sensing and actuation electrodes is known to result in a high level of feedthrough, leading to a low imaging resolution. Readout circuit noise further deteriorates the imaging precision. Here, we investigate the noise sources that affect AFM microcantilevers with collocated aluminum nitride (AlN) actuator–sensor pairs. We reported these cantilevers in earlier work and demonstrated that they display a very low level of feedthrough between the actuation and sensing electrodes. We present a high signal-to-noise ratio (SNR) sensing method that enables us to demonstrate high-resolution AFM on a calibration grating with nm-step silicon carbide (SiC) terraces. In conclusion, measuring the Lorentzian response of the cantilever’s Brownian motion with the on-chip active sensor at resonance enables us to calibrate the dynamic stiffness at the first fundamental resonance mode, without utilizing an optical sensor.

47 OTHER INSTRUMENTATION↗
DOE OSTI2020

Coherent Transfer of Spin Angular Momentum by Evanescent Spin Waves within Antiferromagnetic NiO

Insulating antiferromagnets are efficient and robust conductors of spin current. To realise the full potential of these materials within spintronics, the outstanding challenges are to demonstrate scalability down to nanometric lengthscales and the transmission of coherent spin currents. Here, we report the coherent transfer of spin angular momentum by excitation of evanescent spin waves of GHz frequency within antiferromagnetic NiO at room temperature. Using element-specific and phase-resolved x-ray ferromagnetic resonance, we probe the injection and transmission of ac spin current, and demonstrate that insertion of a few nanometre thick epitaxial NiO(001) layer between a ferromagnet and non-magnet can even enhance the flow of spin current. Our results pave the way towards coherent control of the phase and amplitude of spin currents at the nanoscale, and enable the realization of spin-logic devices and spin current amplifiers that operate at GHz and THz frequencies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Etching sharp tips from thin metallic wires for tuning-fork-based scanning probe microscopy

Sharp tips are critical for obtaining high resolution images in scanning probe microscopy (SPM), particularly in samples with large variations in topography. For tuning-fork-based SPM, such tips are commonly obtained by electrochemical etching of metallic wires (e.g., tungsten). Electrochemical etching of metallic wires is the preferred means of preparing tips for scanning tunneling microscopy (STM), and techniques for obtaining sharp tips have been investigated extensively. However, the requirements for STM and tuning-fork-based SPM are different. In particular, the wires used in STM are typically 250-500 μ m in diameter, while the wires used for tuning-fork-based SPM are usually an order of magnitude narrower in order to minimize loading of the tuning fork: 25-50 μ m and sometimes down to a few micrometers in diameter. Consequently, many of the recipes developed for etching thicker metallic wires for STM tips do not give optimal results for smaller diameter wires. The authors describe here a modification of the etching circuit of Ibe et al . that significantly improves the reproducibility and reliability of the etching process for thin wires, and discuss the parameters that affect the aspect ratio of produced tips.

42 ENGINEERING↗
DOE OSTI2021

Analysis of pump-to-signal noise transfer in two-stage ultra-broadband optical parametric chirped-pulse amplification

In optical parametric chirped-pulse amplification (OPCPA), pump temporal intensity modulation is transferred to the chirped-signal spectrum via instantaneous parametric gain and results in contrast degradation of the recompressed signal. We investigate, for the first time to our knowledge, the pump-to-signal noise transfer in a two-stage ultra-broadband OPCPA pumped by a single laser and show the dependence of pump-induced signal noise, characterized both before and after pulse compression, on the difference in pump-seed delay in the two stages. We demonstrate an up-to-15-dB reduction of the pump-induced contrast degradation via pump-seed delay optimization. Experiments and simulations show that, even when parametric amplifiers are operated in saturation, the pump-seed delay can be used to minimize the pump-induced contrast degradation that is attributed largely to the noises from the unsaturated edges of the pulse and that of the beam.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Operating Klystrons at the Spallation Neutron Source – Two Decades of Perspective

Klystron amplifiers have been operated at the Spallation Neutron Source (SNS) in support of the user program since 2006. SNS tubes have amassed over 100,000 hours of high-voltage and filament-on time providing a significant source of operational statistics for high power, high-duty klystrons. Additionally, the SNS Radiofrequency (RF) Systems Group has developed operational methods to mitigate specific reliability challenges, such as cathode arcing and output power instability. Despite much progress, many of these challenges persist, prompting the SNS to update the procedures used for klystron processing as well as develop a higher throughput test stand.

Moss, John [ORNL] (ORCID:0009000085988916)↗
DOE OSTI2022

Development and Operation of PIP-II Injector Test, SSR1 Cryomodule, 325 MHz Amplifiers

The PIP-II Injector Test (PIP2IT) has successfully accelerated ionized hydrogen up to 17MeV through a superconducting, single spoke resonator (SSR1) cryomodule at Fermi National Accelerator Laboratory (FNAL). Each of the SSR1 cavities is tuned to 325MHz and requires up to 6 kW of RF power to accelerate 2mA of ionized hydrogen at the design gradients. RF power amplifiers, specialized for SRF cavity beam operations, were designed by Bhabha Atomic Research Center (BARC) and constructed in a collaboration between the BARC in Mumbai, India and the Electronics Corporation of India Limited (ECIL) in Hyderabad, India. The RF amplifiers meet the specifications and requirements mutually approved between BARC and FNAL. They operate at 325 MHz with a linear power output of 7 kW in both CW and pulse mode. The amplifiers are compatible with the FNAL accelerator personnel safety system and the cavity protection interlocks. Access to controls and internal diagnostic instrumentation are compatible with EPICS control standards. This paper gives details about RF power amplifier development within the Department of Atomic Energy (DAE), India and the operational details with PIP2IT at FNAL.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Power-Hardware-in-the-Loop Interfaces for Inverter-Based Microgrid Experiments Including Transitions

Microgrids continue to proliferate, particularly those that rely on inverter-based resources as the microgrid's voltage and frequency leader. Hardware-in-the-loop simulations can de-risk microgrid deployments, and therefore we need power-hardware-in-the-loop (PHIL) interfaces for grid-forming (GFM) inverters to enable simulations of seamless transitions between islanded and grid-connected operation. Such interfaces are particularly challenging when the inverters need to switch modes, i.e., between grid-following (GFL) and GFM as the microgrid transitions between grid-connected and islanded operation. This paper presents two PHIL interfaces for such microgrids and the preliminary experimental results.

experiments↗
DOE OSTI2023

Power Hardware-in-the-Loop Interfaces for Inverter-Based Microgrid Experiments Including Transitions: Preprint

Microgrids continue to proliferate, particularly those that rely on inverter-based resources as the microgrid's voltage and frequency leader. Hardware-in-the-loop (HIL) simulations can de-risk microgrid deployments, and therefore we need power-hardware-in-the-loop (PHIL) interfaces for grid-forming (GFM) inverters to enable simulations of seamless transitions between islanded and grid-connected operation. Such microgrid interfaces are particularly challenging to model when the inverters need to switch modes, i.e., between grid-following (GFL) and GFM as the microgrid transitions between grid-connected and islanded operation. This paper presents two PHIL interfaces for such microgrids and the preliminary experimental results: One interface is suitable for those who have access to a power amplifier that can operate as a controllable current source, and the other is for those who need a solution that uses a voltage-mode power amplifier.

battery energy storage system↗
DOE OSTI2020

Integrated Circuit Design for Radiation-Hardened Charge-Sensitive Amplifier Survived up to 2 Mrad

According to the continuous development of metal-oxide semiconductor (MOS) fabrication technology, transistors have naturally become more radiation-tolerant through steadily decreasing gate-oxide thickness, increasing the tunneling probability between gate-oxide and channel. Unfortunately, despite this radiation-hardened property of developed transistors, the field of nuclear power plants (NPPs) requires even higher radiation hardness levels. Particularly, total ionizing dose (TID) of approximately 1 Mrad could be required for readout circuitry under severe accident conditions with 100 Mrad around a reactor in-core required. In harsh radiating environments such as NPPs, sensors such as micro-pocket-fission detectors (MPFD) would be a promising technology to be operated for detecting neutrons in reactor cores. For those sensors, readout circuits should be fundamentally placed close to sensing devices for minimizing signal interferences and white noise. Therefore, radiation hardening ability is necessary for the circuits under high radiation environments. This paper presents various integrated circuit designs for a radiation hardened charge-sensitive amplifier (CSA) by using SiGe 130 nm and Si 180 nm fabrication processes with different channel widths and transistor types of complementary metal-oxide-semiconductor (CMOS) and bipolar CMOS (BiCMOS). These circuits were tested under γ–ray environment with Cobalt-60 of high level activity: 490 kCi. The experiment results indicate amplitude degradation of 2.85%–34.3%, fall time increase of 201–1730 ns, as well as a signal-to-noise ratio (SNR) of 0.07–11.6 dB decrease with irradiation dose increase. These results can provide design guidelines for radiation hardening operational amplifiers in terms of transistor sizes and structures.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Non-reciprocal acoustoelectric microwave amplifiers with net gain and low noise in continuous operation

Abstract Piezoelectric acoustic devices that are integrated with semiconductors can leverage the acoustoelectric effect, allowing functionalities such as gain and isolation to be achieved in the acoustic domain. This could lead to performance improvements and miniaturization of radio-frequency electronic systems. However, acoustoelectric amplifiers that offer a large acoustic gain with low power consumption and noise figure at microwave frequencies in continuous operation have not yet been developed. Here we report non-reciprocal acoustoelectric amplifiers that are based on a three-layer heterostructure consisting of an indium gallium arsenide (In 0.53 Ga 0.47 As) semiconducting film, a lithium niobate (LiNbO 3 ) piezoelectric film, and a silicon substrate. The heterostructure can continuously generate 28.0 dB of acoustic gain (4.0 dB net radio-frequency gain) for 1 GHz phonons with an acoustic noise figure of 2.8 dB, while dissipating 40.5 mW of d.c. power. We also create a device with an acoustic gain of 37.0 dB (11.3 dB net gain) at 1 GHz with 19.6 mW of d.c. power dissipation and a non-reciprocal transmission of over 55 dB.

42 ENGINEERING↗
DOE OSTI2022

Performance of Hamamatsu VUV4 SiPMs for detecting liquid argon scintillation

Detection of light signals is crucial to a wide range of particle detectors. In particular, efficient detection of vacuum ultraviolet (VUV) light will provide new opportunities for some novel detectors currently being developed, but is technically challenging. In this paper, we characterized the performance of Hamamatsu VUV4 silicon photomultipliers (SiPMs) for detecting VUV argon scintillation light without wavelength shifting. Using a customized cryogenic amplifier design, we operated two models of VUV4 SiPMs inside liquid argon and thoroughly examined their direct sensitivities to liquid argon scintillation. In addition to describing their cryogenic performance, we measured a photon detection efficiency of 14.7 +1.1 -2.4 % and 17.2 +1.6 -3.0 % at 128 nm for these two VUV4 models for operation at 4 V of overvoltage, with the main uncertainty arising from the SiPM reflectivity for VUV light.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

A new active base of photomultiplier R4125 designed for the PbWO4 calorimeter

This paper presents the design, performance, and results of the radiation tests of an active base for Hamamatsu R4125 photomultiplier tube. The active base was designed at Jefferson Lab and comprises of a high voltage divider and an on-board amplifier. The photomultiplier with the active base is used to detect light from lead tungstate scintillating crystals of the forward electromagnetic calorimeter of the GlueX detector. The active base amplifier allows to operate the tube at lower high voltage and thus to limit the photomultiplier anode current to a few micro ampereres at the maximum counter rate of 1 MHz counter, while retaining the dynamic range of output signals. The performance of calorimeter modules instrumented with the active base was studied using detector prototypes positioned into the beam of photons. The key performance parameters such as the linearity, high-rate capability, and the energy resolution verified that the active base design meets the detector specifications

Somov, Alexander [Thomas Jefferson National Accele↗
DOE OSTI2024

Analysis of the Aeroelastic Dynamics of Lightweight Flexible Variations of the SNL-NRT Turbine

Current trends show that wind turbines are growing in size to meet a rising demand for renewable energy generation, and their upscaled rotors have inherently become more flexible to maintain a proportionally lighter design. This is because larger rotors must be less massive relative to their diameter to minimize the levelized cost of energy (LCOE), which means that blades that are notably less stiff are produced as a result. These structural changes to blades are often reflected in their compromised aeroelastic stability and amplified deformation during operation, which has the potential to decrease the blade’s expected lifetime and the performance of the machine overall. Variations in blade flexibility are also known to influence vortex-wake structures downstream of the turbine, causing patterns of velocity deficit to evolve in ways that affect the performance of other turbines in the farm. This research explores how the increased flexibility of modern utility-scale wind turbine blades influences rotor aeroelastic behavior and interactions with farm flow. High-fidelity simulations of Sandia National Laboratories’ (SNL) National Rotor Testbed (NRT) wind turbine are presented. Flexible variations of the NRT baseline blade are simulated in a variety of realistic operational conditions typically expected at the SNL’s SWiFT facility in Lubbock, Texas. Solutions are then compared to investigate how specific changes to the structural properties of the NRT baseline blade’s design and construction can influence its aeroelastic response at the rotor and the evolution of the turbine’s wake.

Farrell, Alayna (ORCID:000000023555720X)↗