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All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Pressure-Induced Metal-like Transport and Magnetoresistance in a Au 2+ –Au 3+ Halide Perovskite

The Cs 4 Au II Au III 2 Cl 12 perovskite (1), featuring AuCl 4 trimers separated by vacancies, enables the first high-pressure study of Au 2+/3+ mixed-valence. Our computational analysis of the gold frontier orbitals suggests that the Au 2+ →Au 3+ intervalence charge transfer (IVCT) occurs across the vacancies. Computational structures indicate that these vacancies rapidly shrink with pressure and the Au 2+ and Au 3+ coordination spheres become very similar at the phase transition to nearly cubic symmetry at ca. 15 GPa─enabling facile IVCT. Although the activation energy of conductivity of 0.73(4) meV and far-infrared absorption indicate a small but nonzero bandgap, ambient thermal energy drives the IVCT, affording metallic properties: prominent infrared reflectivity and transport values of 10 2 S·cm –1 . This prompted us to perform the first high-pressure studies of magnetoresistance (MR) and Hall effect in halide perovskites. At 16 GPa, the MR increases by 9.3% at 2 K and 9 T; this value is maintained up to 27 GPa, when a local distortion drives electronic localization. By globally fitting the MR and Hall resistance to a two-carrier model we quantify how the carrier densities and mobilities evolve with pressure. Thus, metal-like transport and MR in 1 is driven by a pressure-induced transition from localized to partially delocalized mixed-valence.

Deschene, Christina R. [Stanford University, CA (U↗
DOE OSTI2025

MnSi 2 Te 4 : A van der Waals Antiferromagnetic Semiconductor with Large Negative Magnetoresistance

Magnetism in van der Waals semiconductors offers significant potential for fundamental research on low-dimensional magnetism and the development of high-performance two-dimensional spintronic devices. Here, we report the growth, physical properties, and first-principles calculations of a new dual-octahedral transition metal chalcogenide (DTMC) MnSi 2 Te 4 . MnSi 2 Te 4 features a layered structure with an intralayer heterostructure, where the metal octahedra and nonmetal dimeric octahedra form zigzag chains alternately. Property characterization reveals that MnSi 2 Te 4 is a collinear G-type antiferromagnetic semiconductor, with a Néel temperature T N of 18.6 K and a significant unsaturated negative magnetoresistance (NMR) reaching −42.5% at 9 T and 100 K. First-principles calculations on the electronic band structure demonstrate that the large NMR primarily originates from the spin splitting due to parity-time symmetry breaking. This study not only discovers a new member of DTMCs with a unique crystal structure and large NMR, but also establishes a promising platform for investigating next-generation spintronic devices.

Liao, Ke [Chinese Academy of Sciences (CAS), Beiji↗
DOE OSTI2025

Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here, in this study, we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe 2 ) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr 2 Ge 2 Te 6 ), which allows to electrically read the up and down magnetic states of the Cr 2 Ge 2 Te 6 layer through longitudinal resistance measurements.

Kao, I-Hsuan [Carnegie Mellon Univ., Pittsburgh, P↗
DOE OSTI2025

Off-state magnetoresistance in long-channel germanium Schottky-barrier MOSFETs

An increasing magnetic field perpendicular to an undoped semiconductor surface at low temperature is known to strengthen the binding of localized electrons to stationary ions, as the wavefunction's tails evolve from exponential to Gaussian. It is also known that application of a high bias voltage to a depleted semiconductor can liberate bound charge and induce a large drop in electrical resistance. We connect these established results to experimental electrical transport measurements on off-state germanium Schottky-barrier metal–oxide–semiconductor field-effect transistor (MOSFETs) with an aluminum oxide insulating dielectric and platinum germanide contacts. We make measurements at the three distinct orientations of the magnetic field with respect to the substrate and the current. At 6 K, we observe sharp attenuation of current by more than 2 orders of magnitude, within 60 mT, at a crossover magnetic field perpendicular to the substrate. A 1 T magnetic field attenuates the current by more than 4 orders of magnitude. The strength of the attenuation and the value of the crossover field are controlled by both the gate–source and drain–source voltages. The attenuation is much weaker when the magnetic field is parallel to the current. Finally, we orient the magnetic field parallel to the substrate, but perpendicular to the current, allowing us to distinguish charge hopping at the oxide interface from charge hopping in the bulk. In conclusion, this large off-state magnetoresistance can be exploited for cryogenic magnetic- and photo-detection, and for high-bias, low-leakage MOSFETs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Emergent ferromagnetism and unusual irreversible magnetoresistance in an intercalated van der Waals antiferromagnet

Orthorhombic air-stable two-dimensional (2D) antiferromagnet (AFM) CrSBr has attracted much research interest lately thanks to its rich magnetic behaviors together with its remarkable electronic, excitonic, and polaritonic properties. Here, we report a reliable electrochemical intercalation method by inserting large tetrabutylammonium (TBA + ) ions into CrSBr layers. Magnetically, such intercalation efficiently suppresses the interlayer AFM and induces a ferromagnetic (FM) order with a much-enhanced transition temperature up to 200 K, nearly 70 K higher than the AFM onset of 132 K in pristine CrSBr. Electronically, the TBA + intercalation not only increases the electric conductivity of CrSBr, which is further enhanced by magnetic fields, but also introduces a giant negative irreversible magnetoresistance. This work demonstrates the tunable magnetic and electronic properties of CrSBr as well as their interplay, paving the way for advanced spintronic and magnetic memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Incommensurate Magnetism Drives Singular Angular Magnetoresistance in the Magnetic Weyl Semimetal CeAlGe

Here, we demonstrate that a multi-𝐤 incommensurate magnetic state in the Weyl semimetal CeAlGe gives rise to a singular angular magnetoresistance (SAMR), which is an electrical transport signature capable of detecting magnetic field direction with exceptional precision. In contrast, its sister compound CeAlSi is devoid of both multi-𝐤 order and SAMR. We reveal that both phenomena appear upon 57% Ge substitution in CeAlSi 1−𝑥⁢ Ge 𝑥 and coincide with electronic structure changes that soften the single-ion in-plane anisotropy and enhance Weyl-mediated magnetic interactions. These results unveil a remarkable connection between band topology, electronic transport, and collective magnetism in Weyl semimetals.

Yao, Xiaohan [Boston College, Chestnut Hill, MA (U↗
DOE OSTI2025

Electronic structure complexity and extremely large magnetoresistance in antiferromagnetic semimetal SmAgSb 2

SmAgSb 2 , a layered magnetic semimetal in the tetragonal 𝑅⁢𝑇⁢ Sb 2 family (𝑅 = Y, Sc, rare earth; 𝑇 = transition metal), is known to exhibit extremely large magnetoresistance (XMR) below its antiferromagnetic (AFM) transition temperature. Here, in this work, we present a comprehensive investigation combining magnetotransport measurements, density functional theory calculations accounting for electron correlation, and angle-resolved photoemission spectroscopy. Our results reveal a complex electronic structure characterized by a multiband Fermi surface and intricate magnetic ground states. We demonstrate that simple two-band models, previously employed in the literature, fail to consistently describe the observed transport phenomena. Notably, we report an XMR of approximately 25200% at 2 K under a 14 T magnetic field, significantly exceeding earlier reports for this material family and rivaling the performance of prominent nonmagnetic XMR systems. This pronounced enhancement below 𝑇 𝑁 suggests that the XMR originates from a combination of multiband electron-hole compensation and enhanced magnetic scattering in this correlated AFM semimetal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Large negative magnetoresistance in the off-stoichiometric topological semimetal PrSb x Te 2- x

Magnetic topological materials LnSbTe (Ln = lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Varying Sb and Te composition is an efficient approach to control structural, magnetic, and electronic properties. Here we report the composition-dependent properties in PrSb x Te 2-x . We identified the tetragonal-to-orthorhombic structure transitions in this material system, and very large negative magnetoresistance in the x = 0.3 composition, which might be ascribed to the coupling between magnetism and transport. Such unusual magnetotransport enables PrSb x Te 2-x topological materials as a promising platform for device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Excitations across the Equilibrium and Photoinduced “Hidden” States of Magnetoresistive Manganites

“Hidden” phases, generated using ultrafast laser pulses (few hundred femtoseconds), with distinct properties than at the thermodynamic equilibrium, are appealing for technologies, as they can be long-lived, with a lifetime of hours or weeks, and reversible with temperature sweeping or extra pulses. In this regard, La 2/3 ⁢Ca 1/3⁢ MnO 3 (LCMO) stands out due to its tunability through epitaxial strain, which can drive the bulk ferromagnetic metal into an antiferromagnetic insulator (AFI), and its susceptibility to photoinduced transitions. Indeed, AFI LCMO displays a long-lived photoinduced transition into a putative hidden phase whose exact nature and excitations are still largely unknown. Here, we combine ultrafast photoexcitation in the near infrared with in situ transport, x-ray absorption, and resonant inelastic x-ray scattering (RIXS) to investigate the excitations (polarons, phonons, and orbital) of the photoexcited phase of LCMO and contrast them with the thermodynamic phases achieved through strain and temperature. In the thermodynamic regime, we establish the correlation between polarons and transport placing them in the “strong coupling” regime of the Holstein model. Upon photoexcitation of LCMO-AFI, we uncover a long-lived phase characterized by the softening of the polaron excitations, the partial suppression of the Jahn-Teller distortion, and nearly unchanged phonons, showing the emergence of a photoexcited state absent in the equilibrium phase diagram. Finally, by varying temperature, epitaxial strain, and photoexcitation fluence, we construct a polaron phase diagram and identify the key spectroscopic signatures of each phase. Our laser-RIXS approach establishes a versatile platform for exploring photoinduced hidden phases in quantum materials in nonstroboscopic conditions.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices

The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.

MXenes↗
DOE OSTI2025

Unconventional Spintronics from Chiral Perovskites

Spintronic devices typically employ heterostructures with ferromagnets which break time-reversal symmetry and have non-vanishing magnetization. With the growing class of materials that support spin-polarized carriers, current, and excitations, it is possible to envision emerging spintronic applications that are not limited to magnetoresistance. Here, chiral perovskites with no net magnetization are considered, where the space-inversion and mirror symmetries are broken to induce chiral structure. The known importance of these perovskites is further expanded by the demonstration of the chiral-induced spin selectivity (CISS). However, the generation of the spin-polarized carriers across the interface with these chiral perovskites remains to be fully understood. These first-principles studies for 2D PbBr4-based chiral perovskites provide their electronic structure and an orbital-based symmetry analysis, which allows to establish an effective Hamiltonian to elucidate the underlying origin of their chirality. The same analysis is used for the Edelstein effect, responsible for electrical generation of the nonequilibrium spin polarization in many materials, which in chiral perovskites can be a mechanism contributing to CISS. Furthermore, by examining optical properties of chiral perovskites and the opportunity to use them to realize tunable altermagnets, another class of zero-magnetization spintronic materials, a versatile materials platform is put forth for unconventional spintronics.

14 SOLAR ENERGY↗
DOE OSTI2025

Zr 3 Mn 3 Sn 4 Ga: A new hetero-kagome bilayer antiferromagnet

Here, we report the magnetic and electrical transport properties of single-crystalline Zr 3 Mn 3 Sn 4 Ga, featuring two distinct kagome lattices: a non-magnetic breathing Zr 3 Sn 4 lattice and a magnetic intact Mn 3 Ga lattice. The material undergoes an antiferromagnetic phase transition at T N = 87 K, with neutron diffraction confirming commensurate ordering characterized by k = (1/3,1/3,0). Transport measurements show metallic behavior, a resistivity anomaly near T N , and 12% magnetoresistance at 2 K under 9 T. Deviations from the conventional second-order power law, along with negative magnetoresistance and nonlinear Hall slope variations near T N , suggest strong magneto-electronic coupling. Resonant photoemission spectroscopy identifies Zr 4d and Mn 3d orbitals as dominant contributors to the valence band, linking the material’s unique electronic properties to its kagome layers. Zr 3 Mn 3 Sn 4 Ga offers a valuable platform to study interactions between magnetism and topological electronic bands in hetero-kagome systems using the co- existence of magnetic and non-magnetic kagome layers and its tunable electronic structure.

Crystal structure↗
DOE OSTI2026

Symmetry-engineered chiral magnetotransport in the correlated oxide SrNbO 3

Chiral transport in topological materials, arising from the interplay between topology and chirality, holds significant potential for energy-efficient spintronics and quantum information technologies through dissipationless, coherent charge flow. However, the emergence of chiral transport by tuning the electronic states of novel chiral materials is largely unexplored. Here, we report chiral transport driven by correlated Dirac fermions in SrNbO 3 epitaxial thin films, where strain-induced nonsymmorphic symmetry of oxygen octahedra tunes the material from metallic to Dirac states. Such symmetry-driven Dirac fermions feature a remarkable enhancement of electron mobility and magnetoresistance. Signatures of chiral transport induced by the chiral anomaly, including negative longitudinal magnetoresistance and twofold planar Hall oscillation, are observed in the Dirac semimetallic state, whereas they are absent in the metallic state of SrNbO 3 thin films. This work highlights a crucial role of symmetry engineering in generating chiral charge transport in oxide Dirac semimetals, opening an avenue to novel oxide-based topological and quantum devices.

Materials science↗
DOE OSTI2025

Magnetic polaron formation in EuZn2P2

Colossal magnetoresistance (CMR) has been observed across many Eu2+-based materials; however, its origin is not completely understood. Here we investigate the antiferromagnetic insulator EuZn2⁢P2 through single crystal x-ray diffraction, transmission electron microscopy, electrical transport, magnetization, dilatometry, and electron spin resonance measurements complemented by density functional theory calculations. Our electrical resistivity data reveal a large negative magnetoresistance, MR=[𝑅⁡(𝐻)−𝑅⁡(0)]/𝑅⁡(0), that reaches MR=−99.7% at 9 T near the antiferromagnetic ordering temperature 𝑇𝑁=23K. Dilatometry measurements show an accompanying field-induced lattice strain. Additionally, Eu2+ electron spin resonance reveals a strong ferromagnetic exchange interaction between Eu2+ and conduction electrons. Our experimental results in EuZn2⁢P2 are consistent with a magnetic polaron scenario and suggest magnetic polaron formation as a prevailing explanation of CMR in Eu2+-based compounds.

Cook, Matt [ORNL] (ORCID:0000000288777505)↗
DOE OSTI2024

Thickness-dependent transport in epitaxial CaIrO 3 perovskite thin films

The coexistence of strong electron–electron correlation and strong spin–orbit coupling makes CaIrO 3 a promising candidate for the exploration of emergent phenomena in thin film form. Here, we have realized epitaxial CaIrO 3 films on (La 0.18 Sr 0.82 )(Al 0.59 Ta 0.41 )O 3 single crystal substrates with excellent crystallinity and thicknesses ranging from 3 to 32 nm. Electronic properties range from semiconducting to insulating behavior as a function of decreasing thickness and correlate with increased tetragonal distortion due to substrate-imposed strain. Hall effect measurements indicate that conduction is dominated by electron-type carriers at room temperature but crosses over to transport dominated by hole-like carriers at lower temperatures. Longitudinal magnetoresistance measurements reveal both a quadratic Lorentz dependence and an additional positive component in the field dependence that cannot be explained purely by semi-classical orbital magnetoresistance effects.

36 MATERIALS SCIENCE↗