DOE OSTI · 3012510
MnSi 2 Te 4 : A van der Waals Antiferromagnetic Semiconductor with Large Negative Magnetoresistance
Abstract
Magnetism in van der Waals semiconductors offers significant potential for fundamental research on low-dimensional magnetism and the development of high-performance two-dimensional spintronic devices. Here, we report the growth, physical properties, and first-principles calculations of a new dual-octahedral transition metal chalcogenide (DTMC) MnSi 2 Te 4 . MnSi 2 Te 4 features a layered structure with an intralayer heterostructure, where the metal octahedra and nonmetal dimeric octahedra form zigzag chains alternately. Property characterization reveals that MnSi 2 Te 4 is a collinear G-type antiferromagnetic semiconductor, with a Néel temperature T N of 18.6 K and a significant unsaturated negative magnetoresistance (NMR) reaching −42.5% at 9 T and 100 K. First-principles calculations on the electronic band structure demonstrate that the large NMR primarily originates from the spin splitting due to parity-time symmetry breaking. This study not only discovers a new member of DTMCs with a unique crystal structure and large NMR, but also establishes a promising platform for investigating next-generation spintronic devices.
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Liao, Ke [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)], Yin, Bo [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)], Pan, Yue [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)], Chen, Long [University of Tennessee, Knoxville, TN (United States)] (ORCID:0000000319928434), Liu, Chen [Chinese Academy of Sciences (CAS), Beijing (China)], Wu, Yan [Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)] (ORCID:000000031566614X), Do, Seung-Hwan [University of Tennessee, Knoxville, TN (United States)] (ORCID:0000000182127803), Gao, Yifan [Hong Kong University of Science and Technology (HKUST) (Hong Kong)], Yang, Yaling [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)], Wang, Yulong [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)], Wang, Xuhui [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)], Li, Ying [Chinese Academy of Sciences (CAS), Beijing (China)], Guo, Zhongnan [University of Science and Technology Beijing (China)] (ORCID:0000000349074679), Liu, Junwei [Hong Kong University of Science and Technology (HKUST) (Hong Kong)] (ORCID:0000000180517349), Wang, Jiaou [Chinese Academy of Sciences (CAS), Beijing (China)], Su, Dong [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)] (ORCID:0000000219216683), Ma, Jie [Shanghai Jiao Tong University (China)] (ORCID:0000000270601325), Wu, Quansheng [Chinese Academy of Sciences (CAS), Beijing (China); University of Chinese Academy of Sciences, Beijing (China)] (ORCID:0000000291544489), Wang, Gang [Chinese Academy of Sciences (CAS), Beijing (China)] (ORCID:0000000191103942). 2025-12-22. MnSi 2 Te 4 : A van der Waals Antiferromagnetic Semiconductor with Large Negative Magnetoresistance. https://doi.org/10.1021/jacs.5c13595
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