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At least 37 records · Page 2

Methods and apparatus of spatially resolved electroluminescence of operating organic light-emitting diodes using conductive atomic force microscopy

A conductive atomic force microscopy (cAFM) technique which can concurrently monitor topography, charge transport, and electroluminescence with nanometer spatial resolution. This cAFM approach is particularly well suited for probing the electroluminescent response characteristics of operating organic light-emitting diodes (OLEDs) over short length scales.

Hersam, Mark C.↗

Narrowing the Phase Distribution of Quasi-2D Perovskites for Stable Deep-Blue Electroluminescence

Solution-processed quasi-2D perovskites contain multiple quantum wells with a broad width distribution. Inhomogeneity results in the charge funneling into the smallest bandgap components, which hinders deep-blue emission and accelerates Auger recombination. Here, a synthetic strategy applied to a range of quasi-2D perovskite systems is reported, that significantly narrows the quantum well dispersity. It is shown that the phase distribution in the perovskite film is significantly narrowed with controlled, simultaneous evaporation of solvent and antisolvent. Modulation of film formation kinetics of quasi-2D perovskite enables stable deep-blue electroluminescence with a peak emission wavelength of 466 nm and a narrow linewidth of 14 nm. Light emitting diodes using the perovskite film show a maximum luminance of 280 cd m –2 at an external quantum efficiency of 0.1%. This synthetic approach will serve in producing new materials widening the color gamut of next-generation displays.

36 MATERIALS SCIENCE↗

Accelerated Stress Testing of Perovskite Photovoltaic Modules: Differentiating Degradation Modes with Electroluminescence Imaging

Herein, electroluminescence (EL) and thermal imaging are used to examine p–i–n metal halide perovskite (MHP) photovoltaic (PV) mini-modules (MA0.6FA0.4PbI3, 20 cells, 78 cm2) before and after indoor-accelerated stress testing or outdoor deployment. Distinct spatial patterns in the EL images emerge, which depend on the external stress conditions experienced by the mini-module. Imaging results highlight a distribution of dark speckle features that dominate after UV stress, attributed to widespread interfacial contact degradation. Lateral intensity gradients across cells dominate after thermal cycling (TC) stress, attributed to current crowding near scribe defects. While current–voltage analysis alone does not give full insight on the degradation process, this study shows that distinct degradation modes can be further defined by multimodal electro-optical imaging (i.e., EL combined with photoluminescence and dark lock-in thermography). Neither UV exposure nor TC-accelerated stress testing alone replicates the same degradation signatures observed after outdoor deployment, suggesting that multiple degradation modes occur under concurrent stressors outdoors. Finally, spatial characterization of degradation modes in MHP PV mini-modules before and after accelerated stress testing lays the groundwork for developing targeted accelerated stress testing procedures through comparison with outdoor aging.

14 SOLAR ENERGY↗

Automated defect identification in electroluminescence images of solar modules

Solar photovoltaic (PV) modules are susceptible to manufacturing defects, mishandling problems or extreme weather events that can limit energy production or cause early device failure. Trained professionals use electroluminescence (EL) images to identify defects in modules, however, field surveys or inline image acquisition can generate millions of EL images, which are infeasible to analyze by rote inspection. Here, we develop a rapid automatic computer vision pipeline (~0.5 seconds/module) to analyze EL images and identify defects including cracks, intra-cell defects, oxygen-induced defects, and solder disconnections. Defect identification is achieved with a machine learning model (Random Forest, ResNet models and YOLO) trained on 762 manually-labeled EL images of PV modules. We compare model performance on an imbalanced real-world validation set containing 134 EL images and determine that ResNet18 and YOLO are the optimal models; we next evaluated these models on a dedicated testing set (129 module images) with resulting macro F1 scores of 0.83 (ResNet18) and 0.78 (YOLO). Using a field EL survey of a PV power plant damaged in a vegetation fire, we analyze 18,954 EL images (2.4 million cells) and inspect the spatial distribution of defects on the solar modules. The results find increased frequency of ‘crack’, ‘solder’ and ‘intra-cell’ defects on the edges of the solar module closest to the ground after fire. We also find an abnormal increase of striation rings on cells which were assumed to be caused mainly in fabrication process. Our methods are published as open-source software. It can also be used to identify other kinds of defects or process different types of solar cells with minor modification on models by transfer learning.

14 SOLAR ENERGY↗

Cell dark current–voltage from non-calibrated module electroluminescence image analysis

Here, we present a fast, accurate, and reliable method of obtaining cell dark current–voltage (I–V) curves from module electroluminescence (EL) images without requiring calibration or correction. For a pristine module, EL-derived dark I–V are compared to directly probed data for a variety of changing imaging parameters: camera sensor, lens, filter, aperture width, exposure time (level of sensor saturation), number of images used, and various combinations of these. Pristine modules and those experiencing different modes and degrees of degradation are examined. A recent study of modules using five different cell technologies demonstrates the practicality of our “EL sweep” technique for performance and degradation studies.

14 SOLAR ENERGY↗

Relationship between charge transfer state electroluminescence and the degradation of organic photovoltaics

The degradation of archetype organic photovoltaics comprising both vacuum and solution-deposited bulk heterojunction active regions is investigated and quantified using a theory based on detailed balance, which relates the open-circuit voltage to the efficiency of charge transfer state emission. To describe this relationship, we account for the difference between electroluminescent external quantum efficiency and the charge transfer emission efficiency. Here, an empirical factor, m, is introduced to distinguish between nonradiative defect sites both within, m = 1, and outside, m >1, of the photoactive heterojunction. The m-factor is used to determine the primary sources of degradation for archetype solution- and vacuum-processed material systems. We conclude that degradation occurs primarily within the donor–acceptor heterojunction for the vacuum-processed devices (where m = 1.020 ± 0.002) and outside of the photoactive heterojunction for the solution-processed devices studied, both with and without an anode buffer layer (where m = 2.93 ± 0.09 and m = 1.90 ± 0.01, respectively).

14 SOLAR ENERGY↗

Carrier dynamics in blue, cyan, and green InGaN/GaN LEDs measured by small-signal electroluminescence

We study the carrier dynamics for c-plane InGaN/GaN light-emitting diodes (LEDs) with various emission wavelengths near the green gap using a small-signal electroluminescence method. The LEDs were grown by Lumileds using state-of-the-art growth conditions. Radiative and non-radiative recombination rates are numerically separated, and the carrier recombination lifetime and carrier density are obtained. Experiment shows that the causes of efficiency reduction at longer wavelength in the present structures are injection efficiency decrease, radiative recombination rate decrease, and imbalance of the increase in Auger–Meitner and radiative terms due to the interplay between the carrier–current density relationship and the quantum-confined Stark effect (QCSE). Here, the effects of QCSE, phase-space filling, and the carrier–current density relationship on efficiency reduction at longer wavelengths are examined separately with experimental data and Schrödinger–Poisson calculations. In addition, we confirm the scaling law between C(n) and B(n) under electrical injection and find that the increase in carrier density at a given current density is the primary cause for lower radiative efficiency at high current density in longer wavelength LEDs. Conversely, we do not observe a significant efficiency reduction at longer wavelengths from extrinsic material degradation.

42 ENGINEERING↗

Origins of the high-energy electroluminescence peaks in long-wavelength (~495–685 nm) InGaN light-emitting diodes

We investigate the unexpected high-energy electroluminescence (EL) peaks observed in long-wavelength InGaN light-emitting diodes (LEDs) with ground state emission peaks between ~495 and 685 nm by studying the EL spectra of LEDs with varying quantum well (QW) thicknesses and indium compositions. In addition to the ground state emission, two high-energy emission peaks were observed in the LEDs with thick QWs and high indium compositions. The less energetic high-energy emission peak (2.4–2.6 eV) is attributed to the optical transitions involving excited states. Factors influencing the excited state transitions, such as the QW thickness and indium compositions, were also examined by simulations to better understand the occurrence of these transitions. The more energetic high-energy emission peak (2.8–3.1 eV) originates from V-defect sidewalls and was verified through micro-photoluminescence measurements. Identification of the high-energy emission peaks is essential as it enables targeted epitaxial or growth optimizations to minimize or eliminate these undesirable emission peaks. In conclusion, this work demonstrates the importance of using thin QWs to suppress the unwanted high-energy emissions due to excited state transitions and V-defect sidewalls for long-wavelength InGaN LEDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Spectral and small-signal electroluminescence analysis of carrier dynamics in dual-color InGaN/GaN light-emitting diodes

Here, we study carrier transport, distribution, and recombination in dual-color c-plane InGaN/GaN LEDs using spectral analysis and small-signal electroluminescence (SSEL). The emissions from green and blue quantum wells (QWs) were experimentally separated and analyzed. Spectral analysis and SSEL independently demonstrate that emission from the green QW is dominant at low current densities, consistent with its narrower bandgap, while emission from the blue QW is more significant at higher current densities, consistent with its reduced quantum confined Stark effect and larger wavefunction overlap. In addition, we demonstrate that the carrier recombination in the QWs is non-uniform, with carrier transport dramatically affecting the carrier distribution between QWs and the recombination in a specific QW. Finally, our measurements suggest that the effective active region contributing most strongly to radiative recombination corresponds to approximately two to three QWs on the p-GaN side, indicating limited carrier transport to more distant QWs in the structures studied.

36 MATERIALS SCIENCE↗

Design, characterization and installation of the NEXT-100 cathode and electroluminescence regions

NEXT-100 is currently being constructed at the Laboratorio Subterráneo de Canfranc in the Spanish Pyrenees and will search for neutrinoless double beta decay using a high-pressure gaseous time projection chamber (TPC) with 100 kg of xenon. Charge amplification is carried out via electroluminescence (EL) which is the process of accelerating electrons in a high electric field region causing secondary scintillation of the medium proportional to the initial charge. The NEXT-100 EL and cathode regions are made from tensioned hexagonal meshes of 1 m diameter. This paper describes the design, characterization, and installation of these parts for NEXT-100. Simulations of the electric field are performed to model the drift and amplification of ionization electrons produced in the detector under various EL region alignments and rotations. Measurements of the electrostatic breakdown voltage in air characterize performance under high voltage conditions and identify breakdown points. Furthermore, the electrostatic deflection of the mesh is quantified and fit to a first-principles mechanical model. Measurements were performed with both a standalone test EL region and with the NEXT-100 EL region before its installation in the detector. Finally, we describe the parts as installed in NEXT-100, following their deployment in Summer 2023.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Methods for In Situ Electroluminescence Imaging of Photovoltaic Modules Under Varying Environmental Conditions

Electroluminescence (EL) imaging is a powerful tool used to identify defects in photovoltaic solar cells. Typically, this type of characterization is performed in the dark using a current injection that equals short-circuit current measured at standard test conditions (STC). Restricting imaging to such a temperature range limits the information obtained about the module and cells. However, it is not trivial to develop a tool that would allow for EL imaging to be performed under a wider range of temperatures. Here we demonstrate an in situ EL imaging capability developed within an environmental chamber that allows for control of sample temperatures between –40 and 90 °C. Additionally, we demonstrate EL imaging of 4-cell mini-modules (MiMo) under front-side mechanical loading. A Raspberry Pi-connected camera with short-pass filter removed is used for EL imaging. The camera is low-cost with a small form-factor, appropriate for use in a harsh, enclosed environment. The camera is installed within a thermally isolating housing mounted within the environmental chamber. Three example cases are given for MiMos that exhibit various forms of degradation including solder fatigue and cell cracking. It is shown that by measuring at conditions above and below STC, different behaviors may be identified. In some cases, restricting characterization to STC may lead to a failure to detect damage existing in the sample.

14 SOLAR ENERGY↗

Electroluminescence Analysis and Grading of Hail Damaged Solar Panels

We analyzed more than 4000 electroluminescence images of hail damaged solar panels from a cluster of houses in Texas. We enhanced the images for ease of analysis and classified the defects within each solar cell into categories of glass breakage, installer damage, inactive substrings, crack severity, interconnect wire problems, and whether the damage was likely caused by hail. From these statistics, we quantified each panel into five levels of hail damage for insurance claims, and four levels of overall quality for potential resale pricing. Here, we share here some statistics regarding the defects with the hope that the data is useful to others attempting to predict the invisible damage to systems based just on the easily observable glass breakage statistics.

14 SOLAR ENERGY↗

Evaluating Electroluminescence Imaging and Image Processing as a Quantitative Solar Cell Characterization Method

Mitigating dust accumulation on the surface of solar arrays is crucial for maintaining maximum power output. We propose investigating electroluminescence imaging paired with image processing as a means of evaluating various dust mitigation techniques. Image processing was able to clearly differentiate between pristine and dusted solar cells. Paired with traditional analysis techniques, this method proves to be a quick and powerful characterization tool.

Photovoltaic↗

Optically Excited Lasing in a Cavity‐Based, High‐Current‐Density Quantum Dot Electroluminescent Device

Abstract Laser diodes based on solution‐processable materials can benefit numerous technologies including integrated electronics and photonics, telecommunications, and medical diagnostics. An attractive system for implementing these devices is colloidal semiconductor quantum dots (QDs). The progress towards a QD laser diode has been hampered by rapid nonradiative Auger decay of optical‐gain‐active multicarrier states, fast device degradation at high current densities required for laser action, and unfavorable competition between optical gain and optical losses in a multicomponent device stack. Here we resolve some of these challenges and demonstrate optically excited lasing from fully functional high‐current density electroluminescent (EL) devices with an integrated optical resonator. This advance has become possible due to excellent optical gain properties of continuously graded QDs and a refined device architecture, which allows for highly efficient light amplification in a thin, EL‐active QD layer.

36 MATERIALS SCIENCE↗

Dispersive Charge Transfer State Electroluminescence in Organic Solar Cells

Abstract The notion of quasi‐equilibrium is central to most solar cells; however, it has been questioned in organic photovoltaics (OPVs) owing to strong energetic disorder that frustrates efficient relaxation of electrons and holes within their respective density of states (DOS). Here, modulation electroluminescence (EL) spectroscopy is applied to OPVs and it is found that the frequency response of charge transfer (CT) state EL on the high energy side of the spectrum differs from that of the low energy side. This observation confirms that static disorder contributes substantially to the linewidth of the steady‐state EL spectrum and is unambiguous proof that the distribution of CT states formed by electrical injection in the dark is not in quasi‐equilibrium. These results emphasize the need for caution when analyzing OPV cells on the basis of reciprocity models that assume quasi‐equilibrium holds, and highlight a new method to study this unusual aspect of OPV operation.

14 SOLAR ENERGY↗

Electroluminescence and Plasmon-Assisted Directional Photoluminescence from 2D HgTe Nanoplatelets

In the visible range, 2D nanoplatelets (NPLs) have brought significant benefits compared to their 0D counterpart with an inherently anisotropic emission, a narrower photoluminescence (PL) signal, and new degrees of freedom to design heterostructures. Compared to the properties of cadmium chalcogenide NPLs in the visible, similar research is still mostly lacking in the infrared, in spite of existing synthetic paths to obtain narrow band gap semiconductors in 2D colloidal form. Here, in this paper, we focus on 2D HgTe NPLs and show how their PL can be stabilized through the proper choice of surface chemistry. We then demonstrate two important steps toward bright infrared light emitting diodes (LEDs) which are (i) the coupling to a plasmonic grating to control the magnitude and spatial direction of the PL signal and (ii) the observation of electroluminescence at 1300 nm, which is near telecom wavelength.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗