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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 19 records
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

The variably spaced superlattice electroluminescent display - A new high efficiency electroluminescence scheme

A new, highly efficient dc electroluminescent display is presented. A variably spaced superlattice scheme is suggested herein which can produce high-energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias an order of magnitude less than the best dc electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer stack under bias and emerge into the active layer at an energy equal to the conduction-band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Brennan, K. F.↗
DOE OSTI2021

Enabling AC electroluminescence in quasi-2D perovskites by uniformly arranging different-n-value nanoplates to allow bidirectional charge transport

Perovskite light-emitting diodes (LEDs) are normally operated under forward direct current (DC) to realize electron/hole injection at cathode/anode surfaces. In this work, we demonstrate an alternating current (AC) driven LED enabled by bi-directionally allowed charge transport in quasi-2D perovskite (PEA 2 MA n-1 PbnI 3n+1 ) film. Essentially, the bi-directional charge transport is realized by uniformly arranging different-n-value 2D nanoplates together with symmetrically designed anode/cathode interfaces, which can allow injected electrons and holes to form light-emitting states under both forward and reverse biases, leading to an AC electroluminescence (EL) with the device architecture of ITO/PEI/PEDOT:PSS/PEA 2 MA n-1 PbnI 3n+1 /P3HT/PEI/Ag. The high AC EL performance was achieved with the radiance = 24 W Sr -1 m -2 and 18.3 W Sr -1 m -2 and EQE = 12.5% and 3.7% under forward and reverse biases. Furthermore, the device-operational stability was largely improved with the half-intensity time of T 50 = 11.0 h under AC bias (+2 V/-2 V, 50 Hz) as compared to T 50 = 3.9 h under forward bias (+2 V/0 V, 50 Hz).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Performance Limits of an Alternating Current Electroluminescent Device

Abstract The use of an alternating current (AC) voltage is a simple, versatile method of producing electroluminescence from generic emissive materials without the need for contact engineering. Recently, it was shown that AC‐driven, capacitive electroluminescent devices with carbon nanotube network contacts can be used to generate and study electroluminescence from a variety of molecular materials emitting in the infrared‐to‐ultraviolet range. Here, performance trade‐offs in these devices are studied through comprehensive device simulations and illustrative experiments, enhancing understanding of the mechanism and capability of electroluminescent devices based on alternating as opposed to direct current (DC) schemes. AC‐driven electroluminescent devices can overcome several limitations of conventional DC‐driven electroluminescent devices, including the requirement for proper alignment of material energy levels and the need to process emitting materials into uniform thin films. By simultaneously optimizing device geometry, driving parameters, and material characteristics, the performance of these devices can be tuned. Importantly, the turn‐on voltage of AC‐driven electroluminescent devices approaches the bandgap of the emitting material as the gate oxide thickness is scaled, and internally efficient electroluminescence can be achieved using low‐mobility single‐layer emitter films with varying thicknesses and energy barrier heights relative to the contact.

Wang, Vivian↗
DOE OSTI2022

Electroluminescence from Single-Walled Carbon Nanotubes with Quantum Defects

Individual single-walled carbon nanotubes with covalent sidewall defects have emerged as a class of photon sources whose photoluminescence spectra can be tailored by the carbon nanotube chirality and the attached functional group/molecule. Here we present electroluminescence spectroscopy data from single-tube devices based on (7, 5) carbon nanotubes, functionalized with dichlorobenzene molecules, and wired to graphene electrodes. We observe electrically generated, defect-induced emissions that are controllable by electrostatic gating and strongly red-shifted compared to emissions from pristine nanotubes. The defect-induced emissions are assigned to excitonic and trionic recombination processes by correlating electroluminescence excitation maps with electrical transport and photoluminescence data. At cryogenic conditions, additional gate-dependent emission lines appear, which are assigned to phonon-assisted hot-exciton electroluminescence from quasi-levels. Similar results were obtained with functionalized (6, 5) nanotubes. We also compare functionalized (7, 5) electroluminescence data with photoluminescence of pristine and functionalized (7, 5) nanotubes redox-doped using gold(III) chloride solution. This work shows that electroluminescence excitation is selective toward neutral defect-state configurations with the lowest transition energy, which in combination with gate-control over neutral versus charged defect-state emission leads to high spectral purity.

36 MATERIALS SCIENCE↗
NASA NTRS1973

Planar electroluminescent panel techniques

Investigations of planar electroluminescent multipurpose displays with latch-in memory are described. An 18 x 24 in. flat, thin address panel with elements spacing of 0.100 in. was constructed which demonstrated essentially uniform luminosity of 3-5 foot lamberts for each of its 43200 EL cells. A working model of a 4-bit EL-PC (electroluminescent photoconductive) electrooptical decoder was made which demonstrated the feasibility of this concept. A single-diagram electroluminescent display device with photoconductive-electroluminescent latch-in memory was constructed which demonstrated the conceptual soundness of this principle. Attempts to combine these principles in a single PEL multipurpose display with latch-in memory were unsuccessful and were judged to exceed the state-of-the-art for close-packed (0.10 in. centers) photoconductor-electroluminescent cell assembly.

Kerr, C.↗
DOE OSTI2025

Ultranarrow electroluminescence from magnetic excitons in the van der Waals antiferromagnetic semiconductor NiPS 3

Electrically driven light emission from two-dimensional (2D) semiconducting materials has enabled numerous optoelectronic technologies, including light-emitting diodes, solid-state lasers, and single-photon sources for quantum communication. Here we report ultranarrow electroluminescence from the magnetic excitonic state of the van der Waals antiferromagnetic semiconductor NiPS 3 . This electroluminescence is enabled by the fabrication of gate-tunable NiPS 3 devices that remain electrically conductive below the antiferromagnetic ordering temperature of 155 K, ultimately allowing field-effect mobilities of 1.3 cm 2 V –1 s –1 and 4.5 cm 2 V –1 s –1 to be directly measured at room temperature and 7 K, respectively. By applying a high-frequency square wave voltage to the gate electrode of the resulting field-effect transistors, electroluminescence is capacitively induced from the magnetic excitons of NiPS 3 . Due to the coupling of these excitons with the underlying NiPS 3 antiferromagnetic order, the electroluminescence has an ultranarrow linewidth of 1 meV and a high degree of linear polarization (ρ = 0.78). In addition to facilitating fundamental studies of the coupling between spin states and excitons in van der Waals magnetic semiconductors, this work will accelerate the development of emerging 2D opto-spintronic applications.

two-dimensional materials↗
DOE OSTI2024

Multijunction Electroluminescent Cooling

We propose a multijunction configuration for an electroluminescent cooling system, incorporating multiple semiconductor layers with different band gaps. Through theoretical analysis focusing on cooling power density and coefficient of performance, we show that increasing the number of semiconductor layers results in an enhanced performance of electroluminescent cooling. We highlight the reduction of operating voltage as a pivotal factor contributing to this improvement. Furthermore, we show that the enhancement can persist in the presence of nonradiative recombination. Our work indicates the potential of multijunction configurations in advancing the capabilities of electroluminescent cooling. Published by the American Physical Society 2024

14 SOLAR ENERGY↗
DOE OSTI2026

Gas electroluminescence in a dual phase xenon-doped argon detector

Noble element detectors using argon or xenon as the detection medium are widely used in the searches for rare neutrino and dark matter interactions. Xenon doping in liquid argon can preserve attractive properties of an argon target while enhancing the detectable signals with properties of xenon. Here, in this work, we deployed a dual-phase liquid argon detector with up to 4% xenon doping in the liquid and studied its gas electroluminescence properties as a function of xenon concentration. At ∼2% xenon doping in liquid argon, we measured ∼34 ppm of xenon in the gas and observed ∼2.5 times larger electroluminescence signals using vacuum ultraviolet silicon photomultipliers than those in pure argon. Analysis of signals of different wavelengths confirms that the argon gas electroluminescence process is strongly modified by the addition of xenon. We propose an analytical model to describe the underlying energy transfer mechanism in argon-xenon gas mixtures. Lastly, the implications of this measurement for low-energy ionization signal detection will be discussed.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Low voltage AC electroluminescence in silicon MOS capacitors

Low power silicon based light source and detector are attractive for on-chip photonic circuits given their ease of process integration. However, conventional silicon light emitting diodes emit photons with energies near the band edge where the corresponding silicon photodetectors lack responsivity. On the other hand, previously reported hot carrier electroluminescent silicon devices utilizing a reverse biased diode require high operating voltages. Here, we investigate hot carrier electroluminescence in silicon metal–oxide–semiconductor capacitors operating under transient voltage conditions. Further, during each voltage transient, large energy band bending is created at the edge of the source contact, much larger than what is achievable at a steady state. As a result, electrons and holes are injected efficiently from a single source contact into the silicon channel at the corresponding voltage transient, where they subsequently undergo impact ionization and phonon-assisted interband recombination. Notably, we show low voltage operation down to 2.8 V by using a 20 nm thick high-κ gate dielectric. We show further voltage scaling is possible by reducing the gate dielectric thickness, thus presenting a low voltage platform for silicon optoelectronic integrated circuits.

42 ENGINEERING↗
DOE OSTI2022

Carrier Dynamics of Polar, Semipolar, and Nonpolar InGaN/GaN LEDs Measured by Small-Signal Electroluminescence

The carrier dynamics in InGaN/GaN light-emitting diodes (LEDs) are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. In this work, we measure the carrier dynamics of a variety of InGaN/GaN LEDs using small-signal electroluminescence methods [1]. A rate equation approach and associated small-signal circuit are used to model carrier injection, recombination in the active region, recombination in the cladding regions, and carrier escape. The model is fit to the measured optical frequency response (S21) and input impedance (S11) of the LEDs to extract the various carrier lifetimes, the carrier density, and the radiative and non-radiative recombination rates. We specifically study planar nonpolar and semipolar LEDs, which show record-high modulation speeds for III-nitride LEDs and present the modulation characteristics of core-shell nanowire-based LEDs. The planar nonpolar m-plane ($101\bar{0}$) micro-LEDs achieve a record-high -3dB modulation bandwidth for a III-nitride LED of 1.5 GHz [2]. The -3dB response of an electrically injected nanowire-based micro-LED with nonpolar facets is also reported, showing a -3dB bandwidth of 1.2 GHz [3]. The high speed is attributed to the shorter carrier lifetime associated with the nonpolar orientation. We also study the carrier dynamics in semipolar ($20\bar{2}\bar{1}$) LEDs for various temperatures [4]. Finally, we present carrier dynamics measurements on commercial-grade c-plane epitaxy for various active region designs, including a wavelength series and a growth quality series. The wavelength series offers insight into the contributions of the quantum confined Stark effect (QCSE) and InGaN material quality on the green gap [5]. The growth quality series investigates the role of non-radiative centers on the LED performance. Extraction of the carrier dynamics using small-signal electroluminescence offers insight into the factors limiting the efficiency and high-speed performance of III-nitride emitters and can be leveraged to ultimately improve the devices.

LEDs, InGaN, electroluminescence, bandwidth, modul↗
NASA NTRSDate not supplied

Electroluminescence Imaging: A Study in the Impact of Microscopic Surface Defects

Electroluminescence (EL) imaging can be used as a quantitative characterization method for solar cell performance when combined with image processing, allowing for the impact of dust grain size on electroluminescence imaging characteristics to be investigated. Simulating these results via modelling can help to predict what dust grain sizes, if any, will have a greater impact on performance.

photovoltaics↗
NASA NTRSDate not supplied

Electroluminescence Imaging: A Quantitative Characterization Technique to Measure Dust Occlusion of Solar Cells

Electroluminescence (EL) imaging is a qualitative characterization technique that is typically used to identify cracks, corrosion, and other defects in solar cells. It consists of imaging a cell under forward bias, where the solar cell emits photons due to radiative electron-hole pair recombination. Over the past few years, our team has expanded this into a quantitative technique with the help of image processing. We have primarily used this method to investigate lunar dust occlusion of solar cells and arrays. Lunar dust accumulation on solar cells is a major concern because it directly limits light accessible to the cell, decreasing power output. Many teams are working to develop dust mitigation technology to protect these arrays on the surface of the Moon, but thoroughly characterizing their efficacy is important to ensure their success prior to launch. Here, we present EL as a quantitative characterization technique to observe dust coverage on solar cells that, when coupled with IV performance measurements, can offer unique insights into how dust coverage impacts power output. Quantitative electroluminescence imaging works by running EL images through an image processing script that first grayscales the image then plots a histogram of the brightness of each pixel. On its own, it does not offer much insight into a solar cell’s performance. However, when comparing images to a baseline pristine, undamaged, or uncoated solar cell, it can quickly provide information about the impacts of surface contaminants or damage to the cell. Here, we present a case study where quantitative EL is used to measure the efficacy of dust mitigation technology for flexible solar arrays and discuss the lessons learned about dust mitigation, testing with lunar simulant, and this characterization technique.

photovoltaics↗
DOE OSTI2020

Low-diffusion Xe-He gas mixtures for rare-event detection: electroluminescence yield

High pressure xenon Time Projection Chambers (TPC) based on secondary scintillation (electroluminescence) signal amplification are being proposed for rare event detection such as directional dark matter, double electron capture and double beta decay detection. The discrimination of the rare event through the topological signature of primary ionisation trails is a major asset for this type of TPC when compared to single liquid or double-phase TPCs, limited mainly by the high electron diffusion in pure xenon. Helium admixtures with xenon can be an attractive solution to reduce the electron diffusion significantly, improving the discrimination efficiency of these optical TPCs. We have measured the electroluminescence (EL) yield of Xe-He mixtures, in the range of 0 to 30% He and demonstrated the small impact on the EL yield of the addition of helium to pure xenon. For a typical reduced electric field of 2.5 kV/cm/bar in the scintillation region, the EL yield is lowered by ~ 2%, 3%, 6% and 10% for 10%, 15%, 20% and 30% of helium concentration, respectively. This decrease is less than what has been obtained from the most recent simulation framework in the literature. The impact of the addition of helium on EL statistical fluctuations is negligible, within the experimental uncertainties. The present results are an important benchmark for the simulation tools to be applied to future optical TPCs based on Xe-He mixtures.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

SiPM-matrix readout of two-phase argon detectors using electroluminescence in the visible and near infrared range

Proportional electroluminescence (EL) in noble gases is used in two-phase detectors for dark matter searches to record (in the gas phase) the ionization signal induced by particle scattering in the liquid phase. The “standard” EL mechanism is considered to be due to noble gas excimer emission in the vacuum ultraviolet (VUV). In addition, there are two alternative mechanisms, producing light in the visible and near infrared (NIR) ranges. The first is due to bremsstrahlung of electrons scattered on neutral atoms (“neutral bremsstrahlung”, NBrS). The second, responsible for electron avalanche scintillation in the NIR at higher electric fields, is due to transitions between excited atomic states. In this work, we have for the first time demonstrated two alternative techniques of the optical readout of two-phase argon detectors, in the visible and NIR range, using a silicon photomultiplier matrix and electroluminescence due to either neutral bremsstrahlung or avalanche scintillation. The amplitude yield and position resolution were measured for these readout techniques, which allowed to assess the detection threshold for electron and nuclear recoils in two-phase argon detectors for dark matter searches. To the best of our knowledge, this is the first practical application of the NBrS effect in detection science.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1987

Two-Layer, Full-Color Electroluminescent Display

Full-color, matrix-addressed electroluminescent display uses three different color phosphors located in two separate, superimposed layers to provide higher brightness, better contrast ratio, and higher resolution. Design used for such transparent, flat-panel display media as thin-film electroluminescent phosphors, liquid crystals, or light-emitting diodes.

Robertson, J. B.↗
NASA NTRS1986

Theoretical and material studies on thin-film electroluminescent devices

A highly efficient DC electroluminescent display is presented. A variably spaced superlattice structure is used to produce high energy injection of electrons into a ZnSe:Mn active layer in which impact excitation of the Mn centers can occur. The device is predicted to operate at an applied external bias on order of magnitude less than the best DC electroluminescent device to date. The device is predicted to have comparable brightness, since it operates in the saturation regime. The improved efficiency stems from avoiding significant energy loss to phonons. The electrons sequentially tunnel through a multilayer ZnSe/CaSrF2 stack under bias and emerge into the active layer at an energy equal to the conduction band bending. The injection energy is chosen to coincide with the impact excitation energy of the Mn centers. Different device designs are presented and their performance is predicted.

Summers, C. J.↗
NASA NTRS1978

Degradation resistance of semiconductor electroluminescent devices

The P type conductivity layer or layers of an electroluminescent device includes zinc as the primary conductivity modifier, and germanium as the secondary conductivity modifier. The combination of zinc and germanium provide an electroluminescent device having improved reliability. In the method of fabricating the P type conductivity layer, the zinc and germanium are simultaneously introduced into the layer during deposition of the layer.

Ladany, Ivan↗