Effect of Crystal Orientation on Fatigue-crack Initiation in Polycrystalline Aluminum Alloys
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Orientation‐patterned (OP) III–V semiconductors—used as quasi‐phase‐matched crystals for nonlinear optics applications—are typically epitaxially grown on expensive III–V substrates using a complex process requiring three separate epitaxy steps. In this work, a method is demonstrated for growing orientation‐patterned III–V crystals on Si substrates through V‐groove nanopatterning and a single epitaxial growth. V‐groove Si allows for suppression of random antiphase domain formation that is typical of III–V growth on (001)‐oriented Si through the use of (111)‐faceted trenches patterned on (001)‐oriented Si substrates. By alternating the directions of the V‐groove trenches between [110] and [10], antiphase boundaries can be selectively induced at the boundaries between the two directions of trenches due to the difference in symmetry between the III–V material and Si. This approach allows for a greatly simplified process for growing OP‐III‐Vs and more broadly is a new, robust approach for precisely patterning antiphase boundaries of arbitrary shape and length scales down to 50 nm.
Here, in this paper, we demonstrate area-selective crystallization of amorphous Si into tunable crystal orientations enabled by atomic imprint crystallization (AIC), where an amorphous Si layer is crystallized by solid phase epitaxy (SPE) from an externally impressed single-crystalline Si template. Using micro-patterned single-crystalline Si templates, a limited area of an amorphous Si film, where the film surface and patterned template surface are in contact, is crystallized via SPE to create an array of crystallographically aligned dots embedded in amorphous matrix. Combining AIC from the top surface and conventional SPE from the substrate, we demonstrate the fabrication of an array of crystalline dots embedded in single-crystalline matrix with tunable in-plane rotation angle. The results indicate the high tunability of the crystallization process enabled by AIC, allowing precise control of crystallographic properties of thin films with area-selectivity; such capability opens opportunities for the design of new materials for a wide range of applications in materials science.
The nickel-base single crystal superalloy PWA 1480 is a candidate blading material for the advanced turbopump development program of the SSME. In order to improve thermal fatigue resistance of the turbine blades, the single crystal superalloy PWA 1480 is grown along the low modulus zone axes (001) crystal orientation by a directional solidification process. Since cubic single crystal materials such as PWA 1480 exhibit anisotropic elastic behavior, the stresses developed within the single crystal superalloy due to mechanical and thermal loads are likely to be affected by the exact orientation of the secondary crystallographic direction with respect to the geometry of the turbine blade. The effects of secondary crystal orientation on the elastic response of single crystal PWA 1480 superalloy were investigated.
Orientation dependence of pitting and blistering in proton irradiated Al polycrystal surfaces
Influence of crystal structure, orientation, and solubility on adhesion and sliding friction of metal single crystals in vacuum
Liquid crystals orientational ordering molecular field theory examined by cluster variation method, predicting first order transition
Crystal structure, orientation and solubility effects on friction and adhesion of various metal single crystals in vacuum
Crystal structure and orientation, and solubility effects on adhesion and sliding friction of four metal single crystals in vacuum
Adhesion and sliding friction influenced by structure, orientation, and solubility of metal single crystals
The deep space climate observatory (DSCOVR) spacecraft resides at the first Lagrangian point about one million miles from Earth. A polychromatic imaging camera onboard delivers nearly hourly observations of the entire sun-lit face of the Earth. Many images contain unexpected bright flashes of light over both ocean and land. We construct a yearlong time series of flash latitudes, scattering angles and oxygen absorption to demonstrate conclusively that the flashes over land are specular reflections off tiny ice platelets floating in the air nearly horizontally. Such deep space detection of tropospheric ice can be used to constrain the likelihood of oriented crystals and their contribution to Earth albedo. These glint observations also support proposals for detecting starlight glints off faint companions in our search for habitable exoplanets.
Germanium (111)-oriented crystals have been grown by the vertical Bridgman technique, in both detached and attached configurations. Microstructural characterization of these crystals has been performed using synchrotron white beam x-ray topography (SWBXT) and double axis x-ray diffraction. Dislocation densities were measured from x-ray topographs obtained using the reflection geometry. For detached-grown crystals, the dislocation density is 4-6 x 10(exp 4) per square centimeter in the seed region, and decreases in the direction of growth to less than 10(exp 3) per square centimeter, and in some crystals reaches less than 10(exp 2) per square centimeter. For crystals grown in the attached configuration, dislocation densities were on the order of 10(exp 4) per square centimeter in the middle of the crystals, increasing to greater than 10(exp 5) per square centimeter near the edge. The measured dislocation densities are in excellent agreement with etch pit density results. The rocking curve linewidths were relatively insensitive to the dislocation densities. However, broadening and splitting of the rocking curves were observed in the vicinity of subgrain boundaries identified by x-ray topography in some of the attached-grown crystals.
Depletion-mode load devices can be integrated with DMOS transistors without any extra diffusions or ion implantation processing steps by judicious choice of the substrate crystal orientation and resistivity. For low voltage operation line-type 1, 1, 1 crystal orientation should be used. The line-type 1, 1, 1 crystal orientation also yields a higher transconductance for the DMOS transistor than the line-type 1, 0, 0 orientation. The geometry of the load device and the DMOS transistor can be made ratioless to conserve area. Self-aligned gates, hitherto considered incompatible with DMOS transistors, have been incorporated in the structure. The experimental DMOS inverters, using a conservative design, have achieved 4-ns propagation delay, 1.3-V operation, and 2-pJ propagation delay-power dissipation product.
Tensile and compressive flow behavior at various temperatures and strain rates, and tensile creep rupture behavior at 850 and 1050 C and various stresses were studied for (001)-oriented single crystals of the Ni-base superalloy PWA 1480. At temperatures up to 760 C, the flow stress is insensitive to strain rate and of greater magnitude in tension than in compression. At temperatures of 800 C and above, the flow stress decreases continuously with decreasing strain rate and the tension/compression anisotropy diminishes. The second stage creep rate and rupture time exhibited power law relationships with the applied stress for both 850 and 1050 C, however with different stress dependencies. The stress exponent for the steady state creep rate was about 7 at 1050 C, but much higher at 850 C, about 12. Directional coarsening of the gamma' phase occurred during creep at 1050 C, but not at 850 C.
Single crystal nickel base superalloy turbine blades are being utilized in rocket engine turbopumps and turbine engines because of their superior creep, stress rupture, melt resistance and thermomechanical fatigue capabilities over polycrystalline alloys. Currently the most widely used single crystal nickel base turbine blade superalloys are PWA 1480/1493 and PWA 1484. These alloys play an important role in commercial, military and space propulsion systems. High Cycle Fatigue (HCF) induced failures in aircraft gas turbine and rocket engine turbopump blades is a pervasive problem. Blade attachment regions are prone to fretting fatigue failures. Single crystal nickel base superalloy turbine blades are especially prone to fretting damage because the subsurface shear stresses induced by fretting action at the attachment regions can result in crystallographic initiation and crack growth along octahedral planes. Furthermore, crystallographic crack growth on octahedral planes under fretting induced mixed mode loading can be an order of magnitude faster than under pure mode I loading. This paper presents contact stress evaluation in the attachment region for single crystal turbine blades used in the NASA alternate Advanced High Pressure Fuel Turbo Pump (HPFTP/AT) for the Space Shuttle Main Engine (SSME). Single crystal materials have highly orthotropic properties making the position of the crystal lattice relative to the part geometry a significant factor in the overall analysis. Blades and the attachment region are modeled using a large-scale 3D finite element (FE) model capable of accounting for contact friction, material orthotrophy, and variation in primary and secondary crystal orientation. Contact stress analysis in the blade attachment regions is presented as a function of coefficient of friction and primary and secondary crystal orientation, Stress results are used to discuss fretting fatigue failure analysis of SSME blades. Attachment stresses are seen to reach peak values at locations where fretting cracks have been observed. Fretting stresses at the attachment region are seen to vary significantly as a function of crystal orientation. Attempts to adapt techniques used for estimating fatigue life in the airfoil region, for life calculations in the attachment region, are presented. An effective model for predicting crystallographic crack initiation under mixed mode loading is required for life prediction under fretting action.
Single, (001)-oriented crystals of PWA 1480 were processed in alumina/silica shell molds in a laboratory high gradient furnace. The furnace employs a graphite resistance heated element, a radiation baffle, and a water cooled radiation trap below the baffle. All crystals were grown in vacuum (10 torr) and all heat transfer was radiative. The element is constructed with a variable cross section that is tapered just above the baffle to maximize heat input and therefore thermal gradient. A maximum alloy temperature of 1600 C was used. A thermal gradient of 130 deg C/cm was recorded at 1370 C just above the solidus of the PWA 1480 alloys. Crystal bars with 14.4 and 17.5 mm diameters were grown in alumina/silica shell molds. Each crystal was started from a 1.6 mm pencil seed at a rate of 76 mm/hr and slowly accelerated to a rate of 200 mm/hr under computer control. Volume percent porosity and average pore size were measured as functions of distance in representative bars. Low cycle fatigue behavior and stress rupture properties were determined.
Thin film synthesis allows for the potential to orient crystals in different orientations, permitting measurement of orientation-dependent material aspects such as band structures and transport anisotropy. Here, Dirac semimetal Cd 3 As 2 films are epitaxially grown on GaAs$[110]$ substrates, which has a $[001]$ orientation in-plane. Films contain domains of two different c-axis orientations resulting from an aligned a-axis in-plane. Magnetoresistance measurements performed along both $[1\bar{1}0]$ and $[001]$ substrate directions reveal similar mobility and carrier concentration, but much larger magnetoresistance along the $[001]$ direction, which can be explained by the guiding center diffusion model as arising from anisotropic disorder and different atomic spacings.
Dichroic X-ray tomography is a technique in which the crystal orientation or magnetization of a sample is resolved in three dimensions. The best-known uses of this technique are for observation of magnetic moments via circular dichroism, using left- and right-handed circularly polarized X-ray beams. Another variant uses linear dichroism to resolve the crystal orientation. In both these techniques, it is assumed that the absorption of X-rays along a path inside a material can be computed as a line integral of a local absorption coefficient along the ray path. For linear dichroism, this assumption is inaccurate because the polarization of the beam changes along the propagation direction when the optic axis of the material is not aligned along the polarization. In this work, a finite-element Maxwell solver is used to simulate tomography and reconstructions. The propagation effect can lead to significant errors in the reconstructed orientations. These errors may be mitigated by taking data at additional angles or by operating at energies at which the dichroism is weak. An iterative approach is proposed which may allow accurate reconstruction with fewer data than would otherwise be required.